钨硅／砷化镓肖特基接触的热稳定性分析

研究了以ＷＳｉ０．６复合材料作为靶源，采用直流空溅射工艺成膜，不同退火温度下ＧａＡｓ衬底材料上ＷＳｉ０．６膜层的特性。包括ＷＳｉ０．６／ＧａＡｓ系统断面ＳＥＭ分析，ＡＥＳ界面机构分析、表面形貌分析及金属－半导体肖特基势垒特性分析，实验结果表明，在氩气压力为１３３Ｐdisplay status     

Al／n—GaAs肖特基接触正向脉冲退化对GaAsIC的影响

本文描述了Ａｌ／ｎ－ＧａＡｓ肖特基接触的正向脉冲退化效应，探讨了当肖特基二极管承受正向电流冲击时，势垒高度ΦＢ升高，直接影响Ａｌ栅ＭＥＳＦＥＴｓ的特性，导致Ａｌ／ｎ－ＧａＡｓ ＩＣ失效的机理。     

铂—镍硅化物／硅接触肖特基势垒的形成方法

本工作研究了低温固相反应形成铂－镍硅化物／硅接触肖特基势垒的方法。介绍了用磁控溅射方法淀积金属薄膜和溅射工艺过程应注意的问题及其对肖特基势垒特性的影响。讨论了Ｈ２气氛中退火以形成优良肖特基势垒接触的方法与实验结果。     

砷化镓欧姆接触中的能带工程

介绍了欧姆接触中运用能带工程的原理，评述了近年来ＧａＡｓ欧姆接触中能带工程应用的研究状况。具体分析了用薄的窄能隙材料做帽层降低势叁高度和基于Ｉｎ金属化系统的欧姆接触两方面的应用。     

铂－镍硅化物／硅接触肖特基势垒的形成方法

本工作研究了低温固相反应形成铂－镍硅化物／硅接触肖特基势垒的方法。介绍了用磁控溅射方法淀积金属薄膜和溅射工艺过程应注意的问题及其对肖特基势垒特性的影响。讨论了Ｈ＿２气氛中退火以形成优良肖特基势垒接触的方法与实验结果。     

Ni/Ti/Si形成硅化物的特性分析

随着MOSFET的特征尺寸进入20nm技术节点,源漏接触电阻成为源漏寄生电阻的主导部分,后栅工艺对硅化物的高温特性提出了更高的要求。分析了Ni/Ti/Si结构在不同温度退火下形成的硅化物的薄膜特性和方块电阻。分别采用J-V和C-V方法,提取硅化物与n-Si(100)接触的势垒高度。Ni/Ti/Si结构形成的镍硅化物在高温下具有良好的薄膜特性,并且可以得到低势垒的肖特基接触。随着退火温度的升高,势垒高度逐渐降低。研究了界面态的影响,在低于650℃的温度下退火,界面态密度随退火温度升高而逐渐增大,高于750℃后,界面电荷极性翻转。     

砷化镓集成电路的应用

综述了迅速发展的砷化镓集成电路市场、电路应用种类以及相关的器件和技术。     

栅结漏电流对GaAsMMIC中平面肖特基二极管C—V特性的影响

构造了考虑栅结漏电流影响的平面肖特基二极管电容计算模型，并用此模型对同一结构不同漏电流的肖特基二极管作了计算分析，计算结果显示，所构造模型与实验结果符合得很好，同时揭示出栅结漏电流对Ｃ－Ｖ特性克有影响。这种影响表现为，在一定的栅压范围内，随着栅结电流的增大，Ｃ－Ｖ曲线明显上抬，文中还与其它未考虑栅结漏电流影响的模型作了对比。     

Enhancement of the Schottky Barrier Height using a Nitrogen-Rich Tungsten Nitride Thin Film for the Schottky Contacts on AlGaN/GaN Heterostructures

Tungsten, stoichiometric W₂N, and nitrogen-rich W₂N films were used as Schottky contacts on AlGaN/GaN heterostructures. The nitrogen content in the film was controlled by varying the nitrogen-to-argon gas flow ratio during the reactive sputter deposition. The diode with the nitrogen-rich film exhibited a higher Schottky barrier height and the leakage current was comparable to that of the Ni/Au Schottky contact. Analysis suggested that this was due to the increase of the tungsten nitride work function as the result of higher nitrogen incorporation. Furthermore, after 600°C thermal annealing, the diode was stable and showed no change in the leakage current.     

双面Schottky势垒型GaAs粒子探测器特性

双面肖特基势垒型 Ga As粒子探测器由半绝缘砷化镓材料制成 ,器件结构为金属 -半导体-金属结构 ,该探测器能经受能量为 1 .5Me V、剂量高达 1 0 0 0 k Gy的电子、50 0 k Gy的 γ射线、β粒子、X射线等粒子的辐照测试 ,辐照后器件击穿曲线坚挺 ,反向漏电流最低为 0 .48μA.器件的另一特征是其反向漏电流与 X射线的照射量呈线性关系 .该探测器在 2 4 1Am( Eα=5.48Me V) α粒子辐照下 ,其最大的电荷收集率和能量分辩率分别为 45%和 7% .在由 90 Sr( Eβ=2 .2 7Me V)发出的 β粒子辐照下 ,探测器有最小的电离粒子谱 .该探测器对光照也有明显的响应     

TiN/n-GaAs肖特基势垒特性

本文用俄歇能谱(AES)、电流-电压(I-V)和电容-电压(C-V)电学测量等方法,研究了反应溅射制备的TiN/n-GaAs肖特基势垒特性.经800℃高温热退火后,TiN/n-GaAs势垒具有良好的整流特性和高温稳定性,其势垒高度为0.80cV,理想因子n为1.07.同时还观察到许多有意义的结果:即随着退火温度的升高(从500℃到800℃),TiN/n-GaAs肖特基二极管的势垒高度增大,势垒电容减小和二极管反向击穿电压增大.我们认为这可能与溅射过程中GaAs衬底中掺氮有关,并用Shannon模型(即金属/P-GaAs/n-GaAs结构)解释了以上结果.研究结果表明,在自对准GaAs MESFET工艺中,TiN是一种很有希望的栅材料.     

氮离子注入对GaAs肖特基势垒性能影响的研究

本文利用离子注入方法,用不同剂量的氮离子对GaAs衬底进行注入实验。结果表明,氮注入明显地改善了Ti/n-GaAs肖特基势垒特性。     

Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors

The high‐bias electrical characteristics of back‐gated field‐effect transistors with chemical vapor deposition synthesized bilayer MoS₂ channel and Ti Schottky contacts are discussed. It is found that oxidized Ti contacts on MoS₂ form rectifying junctions with ≈0.3 to 0.5 eV Schottky barrier height. To explain the rectifying output characteristics of the transistors, a model is proposed based on two slightly asymmetric back‐to‐back Schottky barriers, where the highest current arises from image force barrier lowering at the electrically forced junction, while the reverse current is due to Schottky‐barrier‐limited injection at the grounded junction. The device achieves a photoresponsivity greater than 2.5 A W^?1 under 5 mW cm^?2 white‐LED light. By comparing two‐ and four‐probe measurements, it is demonstrated that the hysteresis and persistent photoconductivity exhibited by the transistor are peculiarities of the MoS₂ channel rather than effects of the Ti/MoS₂ interface.     

InSe Schottky Diodes Based on Van Der Waals Contacts

2D semiconductors are excellent candidates for next‐generation electronics and optoelectronics thanks to their electrical properties and strong light‐matter interaction. To fabricate devices with optimal electrical properties, it is crucial to have both high‐quality semiconducting crystals and ideal contacts at metal‐semiconductor interfaces. Thanks to the mechanical exfoliation of van der Waals crystals, atomically thin high‐quality single‐crystals can easily be obtained in a laboratory. However, conventional metal deposition techniques can introduce chemical disorder and metal‐induced mid‐gap states that induce Fermi level pinning and can degrade the metal‐semiconductor interfaces, resulting in poorly performing devices. In this article, the electrical contact characteristics of Au–InSe and graphite–InSe van der Waals contacts, obtained by stacking mechanically exfoliated InSe flakes onto pre‐patterned Au or graphite electrodes without the need for lithography or metal deposition is explored. The high quality of the metal‐semiconductor interfaces obtained by van der Waals contact allows to fabricate high‐quality Schottky diodes based on the Au–InSe Schottky barrier. The experimental observation indicates that the contact barrier at the graphite–InSe interface is negligible due to the similar electron affinity of InSe and graphite, while the Au–InSe interfaces are dominated by a large Schottky barrier.     

基于GaAs肖特基二极管的330GHz接收前端技术研究

基于GaAs肖特基二极管,设计实现了310~330 GHz的接收机前端.接收机采用330 GHz分谐波混频器作为第一级电路,为降低混频器变频损耗,提高接收机灵敏度,分析讨论了反向并联混频二极管空气桥寄生电感和互感,采用去嵌入阻抗计算方法,提取了二极管的射频、本振和中频端口阻抗,实现了混频器的优化设计,提高了变频损耗仿真精度.接收机的165 GHz本振源由×6×2倍频链实现,其中六倍频采用商用有源器件,二倍频则采用GaAs肖特基二极管实现,其被反向串联安装于悬置线上,实现了偶次平衡式倍频,所设计的倍频链在165 GHz处输出约10 dBm的功率,用以驱动330 GHz接收前端混频器.接收机第二级电路采用中频低噪声放大器,以降低系统总的噪声系数.在310~330 GHz范围内,测得接收机噪声系数小于10.5 dB,在325 GHz处测得最小噪声系数为8.5 dB,系统增益为(31±1)dB.     

氮气氛下衬底负偏压预溅射对GaAs肖特基势垒性能的改善

本文研究了不同气氛下衬底负偏压预溅射对GaAs肖特基势垒特性的影响。我们发现,采用氮气氛下衬底负偏压预溅射新工艺能明显改善GaAs肖特基势垒特性:势垒高度增高,势垒电容减小和二极管反向击穿电压增大。这种新工艺对于GaAs肖特基势垒特性改善和GaAs MESFETs性能提高是一个非常有用的技术。     

微波肖特基势垒二极管硅化物工艺技术研究

对微波肖特基中、低势垒二极管硅化物的工艺技术进行了研究。用Ｎｉ－Ｓｉ硅化物作中势垒硅化物,用Ｔｉ－Ｓｉ硅化物作低势垒硅化物。通过设计和工艺实验,得到温度、时间、真空度等取佳工艺技术条件。在保持微波肖特基二极管势垒特征的同时,提高了反向电压,增强了它的稳定性和可靠性。