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1.
La0.75Sr0.25Cr y Mn1−y O3 (LSCM) (y = 0.0–0.6) composite oxides were synthesized by a complexing process of combining ethylene diamine tetraacetic acid (EDTA) and citrate. X-ray diffraction (XRD), temperature-programmed reduction, electrical conductivity, I–V polarization, and impedance spectroscopy were conducted to investigate the Cr doping effect of La0.75Sr0.25MnO3 on its phase stability and electrochemical performance as a solid-oxide fuel cell (SOFC) anode. The chemical and structural stabilities of the oxides increased steadily with increasing Cr doping concentration, while the electrical conductivity decreased on the contrary. At y ≥ 0.4, the basic perovskite structure under the anode operating condition was sustained. a cell with 0.5-mm-thick scandia-stabilized zirconia electrolyte and La0.75Sr0.25Cr y Mn1−y O3 anode delivered a power density of ∼15 mW·cm−2 at 850°C.  相似文献   

2.
Nanostructured Bi2Se3 and Sn0.5-Bi2Se3 were successfully synthesized by hydrothermal coreduction from SnCl2·H2O and the oxides of Bi and Se. The products were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), and field emission scanning electron microscope (FESEM). Bi2Se3 powders obtained at 180°C and 150°C consist of hexagonal flakes of 50–150 nm in side length and nanorods of 30–100 nm in diameter and more than 1 μm in length. The product obtained at 120°C is composed of thin irregular nanosheets with a size of 100–200 nm and several nanometers in thickness. The major phase of Sn0.5-Bi2Se3 synthesized at 180°C is similar to that of Bi2Se3. Sn0.5-Bi2Se3 powders are primarily nanorod structures, but small amount of powders demonstrate irregular morphologies.  相似文献   

3.
Te-doped CoSb3 (CoSb3−yTey) skutterudites were prepared by hot pressing and their electronic transport properties examined. A single δ-phase was successfully obtained. The Seebeck and Hall coefficients confirmed that all the Te-doped CoSb3 showed n-type conduction. The Te atoms successfully acted as electron donors by substitution of the Sb atoms. The carrier concentration increased an order of 1020 cm−3 by Te doping, whereas the carrier mobility decreased as the doping content increased. The Seebeck coefficient and electrical resistivity decreased with an increase in the Te content. The doping considerably reduced the thermal conductivity due to electron-phonon scattering. The lattice contribution was dominant over the electronic contribution.  相似文献   

4.
Sb5+-doped (NaBi)0.38(LiCe)0.05[]0.14Bi2Nb2O9 (represented as NBNLCS-x, where [] represents A-site vacancies) ceramics were prepared by the conventional solid-state route. The ceramics well sintered to approach ∼98.5% theoretical density and the tetragonality of crystal structure increased with Sb5+ additions. However, the Curie temperature (TC) and the piezoelectric coefficient (d33) of Sb5+-modified ceramics gradually decreased. The 3 mol% Sb5+-doped samples exhibited optimum properties with a d33 value of ∼22 pC/N planar electromechanical coupling factor (kp) of ∼11.2% and relatively high TC of ∼765 °C. These results indicate that NBNLCS-x material is a promising candidate for high-temperature piezoelectric applications.  相似文献   

5.
Ti-Modified (Na0.5K0.5)(Ti x Nb1−x )O3 (NKNT) piezoelectric ceramics were fabricated by double-layer buried powder process at 1020°C for 2 h. The microstructures, and piezoelectric and dielectric properties of the lead-free NKNT ceramics were investigated. X-ray diffraction results indicated that Ti4+ had diffused into the (Na0.5K0.5)NbO3 lattices to form a solid solution with a perovskite structure. The introducing of Ti into the (Na0.5K0.5)NbO3 solid solution effectively reduced the sintering temperature and densified the microstructure with a decreased grain size. The highest relative density reached more than 90%. The highest piezoelectric dielectric coefficient d 33 and planar mode electromechanical coupling coefficient k p were 110 pC/N and 19.5%, which were obtained in the NKNT ceramic with 1 mol% Ti. The piezoelectric properties of the NKNT ceramics were enhanced by aging in air for a period of time owing to the compensation of oxygen vacancies.  相似文献   

6.
The Na2O-B2O3 system is thermodynamically optimized by means of the CALPHAD method. A two-sublattice ionic solution model, (Na+1)P(O−2,BO3 −3,B4O7 −2,B3O4.5)Q, has been used to describe the liquid phase. All the solid phases were treated as stoichiometric compounds. A set of thermodynamic parameters, which can reproduce most experimental data of both phase diagram and thermodynamic properties, was obtained. Comparisons between the calculated results and experimental data are presented.  相似文献   

7.
BaZr1-xScxO3-0.5x (x=0.07,0.10,0.13,0.16) powders were prepared by solid-state reaction method,and ZnO was used as sintering aid.Samples with different amount of ZnO additive were sintered at 1450 ℃ for 6 h in air.Single cubic perovskite phase proton conductors were obtained.Conductivity was measured by electrochemical workstation.It was shown that Sc doping could increase conductivity through enhancing the carrier concentration in the material,but excessive Sc content might decrease the carrier concentration because of its charge compensation.ZnO had an influence on carrier concentration and mobility and affected the electrical conductivity.2 mol% ZnO and 13 mol% ScO1.5 doped sample showed the highest DC conductivity of 3.6 × 10-3 S·cm-1 tested at 800 ℃ in wet hydrogen atmosphere.  相似文献   

8.
It has been shown that BiVO4 and Pb2V2O7 react with each other, forming a new compound of the formula Pb2BiV3O11 at molar ratio equal to 1:1. This compound has also been obtained from PbO, Bi2O3, and V2O5, mixed at a molar ratio of 4:1:3. It melts congruently at a temperature of 725 ± 5 °C and crystallizes in the triclinic system with unit-cell parameters: a = 0.710076 nm, b = 1.41975 nm, c = 1.42972 nm, α = 134.552°, β = 97.2875°, γ = 89.6083°, and Z = 4.  相似文献   

9.
Phase relations in the ternary oxide system Al2O3-V2O5-MoO3 in the solid state in air have been investigated by using the x-ray diffraction (XRD) and differential thermal analysis/thermogravimetric (DTA/TG) methods. It was confirmed that in the subsolidus area of the Al2O3-V2O5-MoO3 system, there exist seven phases, that is Al2O3, V2O5(s.s.), MoO3, AlVO4, Al2(MoO4)3, AlVMoO7, and V9Mo6O40. Seven fields, in which particular phases coexist at equilibrium, were isolated. The crystal structure of AlVO4 has been refined from x-ray powder diffraction data. Its space group is triclinic, , Z = 6, with a = 0.65323(1) nm, b = 0.77498(2) nm, c = 0.91233(3) nm, α = 96.175(2)°, β = 107.234(3)°, γ = 101.404(3)°, V = 0.42555 nm3. The crystal structure of the compound is isotypic with FeVO4. Infrared (IR) spectra of AlVO4 and FeVO4 are compared.  相似文献   

10.
(Na0.5Bi0.5)0.93Ba0.07TiO3 ceramics added with 0.2 wt.% Ln2O3 (Ln = La, Pr, Eu, Gd) were prepared by a citrate method, and the structure and electrical properties of the ceramics were investigated with respect to the size of the lanthanide. All the specimens maintain a coexistence of rhombohedral and tetragonal phases in crystal structure, while no remarkable evolution in microstructure with the lanthanide addition was observed. Compared with (Na0.5Bi0.5)0.93Ba0.07TiO3, the lanthanide addition resulted in an increased diffuseness in phase transition and a decrease in depolarization temperature (Td). The variation in dielectric, piezoelectric and ferroelectric properties with the lanthanide addition presents an evident lanthanide size dependence. The addition of La2O3 or Pr2O3 tailored the electrical properties basically following a soft doping effect, with the specimens added with La2O3 and Pr2O3 attaining high piezoelectric constants (d33) of 188 and 184 pC/N, respectively. By contrast, the Eu2O3 or Gd2O3 addition led to an abnormal change in the electrical properties, which was qualitatively interpreted by an internal stress effect.  相似文献   

11.
Nanostructured skutterudite-related compound Fe0.25Ni0.25Co0.5Sb3 was synthesized by a solvothermal method using FeCl3, NiCl2, CoCl2, and SbCl3 as the precursors and NaBH4 as the reductant. The solvothermally synthesized powders consisted of fine granules with an average particle size of tens of nanometers. The bulk material was prepared by hot pressing the powders. Transport property measurements indicated a heavily doped semiconductor behavior with n-type conduction. The thermal conductivity is about 1.83 W·m−1·K−1 at room temperature and decreases to 1.57 W·m−1·K−1 at 673 K. The low thermal conductivity is attributed to small grain size and high porosity. A maximum dimensionless figure of merit of 0.15 is obtained at 673 K.  相似文献   

12.
W-type barium ferrites doped with Gd3+,Ba1-xGdx(Zn0.3Co0.7)2Fe16O27(x = 0,0.05,0.10,0.15,0.20),were prepared by a sol-gel method.The effects of Gd3+ substitution on their microstructure,electromagnetic properties and microwave absorptive behavior were analyzed.The XRD patterns showed the single phase of W-type barium ferrite when x ≤ 0.15.Microwave electromagnetic properties of samples were studied at the frequency range from 2 GHz to 18 GHz using a network analyzer(Agilent 8722ET).The complex permittivity ...  相似文献   

13.
Cr 2 O 3-coated LiNi 1/3 Co 1/3 Mn 1/3 O 2 cathode materials were synthesized by a novel method. The structure and electrochemical properties of prepared cathode materials were measured using X-ray diffraction (XRD), scanning electron microscopy (SEM), charge-discharge tests, cyclic voltammetry (CV), and electrochemical impedance spectroscopy (EIS). The measured results indicate that surface coating with 1.0 wt% Cr 2 O 3 does not affect the LiNi 1/3 Co 1/3 Mn 1/3 O 2 crystal structure (α-NaFeO 2 ) of the cathode material compared to the pristine material, the surfaces of LiNi 1/3 Co 1/3 Mn 1/3 O 2 samples are covered with Cr 2 O 3 well, and the LiNi 1/3 Co 1/3 Mn 1/3 O 2 material coated with Cr 2 O 3 has better electrochemical performance under a high cutoff voltage of 4.5 V. Moreover, at room temperature, the initial discharging capacity of LiNi 1/3 Co 1/3 Mn 1/3 O 2 material coated with 1.0 wt.% Cr 2 O 3 at 0.5C reaches 169 mAh·g 1 and the capacity retention is 83.1% after 30 cycles, while that of the bare LiNi 1/3 Co 1/3 Mn 1/3 O 2 is only 160.8 mAh·g 1 and 72.5%. Finally, the coated samples are found to display the improved electrochemical performance, which is mainly attributed to the suppression of the charge-transfer resistance at the interface between the cathode and the electrolyte.  相似文献   

14.
Precursor of nanocrystalline Zn0.5Ni0.5Fe2O4 was obtained by grinding mixture of ZnSO4·7H2O,NiSO4·6H2O,FeSO4·7H2O,and Na2CO3·10H2O under the condition of surfactant polyethylene glycol(PEG)-400 being present at room temperature,washing the mixture with water to remove soluble inorganic salts and drying it at 373 K.The spinel Zn0.5Ni0.5Fe2O4 was obtained via calcining precursor above 773 K.The precursor and its calcined products were characterized by differential scanning calorimetry(DSC) ,Fourier transform infrared(FT-IR) ,X-ray diffraction(XRD) ,and vibrating sample magnetometer(VSM) .The result showed that Zn0.5Ni0.5Fe2O4 obtained at 1073 K had a saturation magnetization of 74 A·m2·kg-1.Kinetics of the crystallization process of Zn0.5Ni0.5Fe2O4 was studied using DSC technique,and kinetic parameters were determined by Kissinger equation and Moynihan et al.equation.The value of the activation energy associated with the crystallization process of Zn0.5Ni0.5Fe2O4 is 220.89 kJ·mol-1.The average value of the Avrami exponent,n,is equal to 1.59±0.13,which suggests that crystallization process of Zn0.5Ni0.5Fe2O4 is the random nucleation and growth of nuclei reaction.  相似文献   

15.
In this study, the thermoelectric properties of 0.1 wt.% Cdl2-doped n-type Bi2Te2.7Sb0.3 compounds, fabrieated by SPS in a temperature range of 250°C to 350°C, were characterized. The density of the compounds was increased to approximately 100% of the theoretical density by carrying out consolidation at 350°C. The Seebeck coefficient, thermal conductivity, and electrical resistivity were dependent on a hydrogen reduction process and the sintering temperature. The Seebeck coefficient and the electrical resistivity increased with the reduction process. Also, electrical resistivity decreased and thermal conductivity increased with sintering temperature. The results suggest that carrier density and mobility vary according to the reduction process and sintering temperature. The highest figure of merit, 1.93×10−3 K−1, was obtained for the compound consolidated at 350°C for 2 min.  相似文献   

16.
P-type Bi2?xSbxTe3:Cum (x = 1.5–1.7 and m = 0.002–0.003) solid solutions were synthesized using encapsulated melting and were consolidated using hot pressing. The effects of Sb substitution and Cu doping on the charge transport and thermoelectric properties were examined. The lattice constants decreased with increasing Sb and Cu contents. As the amount of Sb substitution and Cu doping was increased, the electrical conductivity increased, and the Seebeck coefficient decreased owing to the increase in the carrier concentration. All specimens exhibited degenerate semiconductor characteristics and positive Hall and Seebeck coefficients, indicating p-type conduction. The increased Sb substitution caused a shift in the onset temperature of the intrinsic transition and bipolar conduction to higher temperatures. The electronic thermal conductivity increased with increasing Sb and Cu contents owing to the increase in the carrier concentration, while the lattice thermal conductivity slightly decreased due to alloy scattering. A maximum figure of merit, ZTmax = 1.25, was achieved at 373 K for Bi0.4Sb1.6Te3:Cu0.003.  相似文献   

17.
The ellipsometry method (with photon energies ħω= 0.1–5.0 eV) has been used to study the optical properties of the CoMnSb phase with a structure of the L21 type. Infrared-absorption features indicating the existence of a pseudogap in the density of states at the Fermi level N(E F) have been revealed. The transverse Kerr effect in CoMnSb and PtMnSb has been measured at photon energies ħω = 0.4–4.5 eV. It has been shown that the observed peaks of magnetooptical activity in CoMnSb are due to the off-diagonal component ɛ ij of the tensor of the complex dielectric constant [^(e)]\hat \varepsilon. Spectral dependences of the magnetooptical effect δ q quadratic in magnetization M have been studied for the first time for PtMnSb for the s and p polarizations of the light wave. In the region where a giant Kerr effect (ħω ∼ 1.7 eV) is observed in PtMnSb, a sharp increase in the δ q effect has been revealed caused by the change in the diagonal component ɛ ii of the tensor] of the dielectric constant in an external magnetic field. Based on the δ q spectra for the p polarization of the light wave, additions have been calculated to the real and imaginary parts of the diagonal component of the [^(e)]\hat \varepsilon tensor in the magnetic field (Re(Δɛ ij ) p and (Δɛ) ij ) p , respectively). The spectrum of Im(Δε ij ) p has been analyzed in terms of the existing concepts on the electron structure of PtMnSb.  相似文献   

18.
The thermodynamic database of the ZrO2-Gd2O3-Y2O3-Al2O3 system is up-dated taking into account new data on lattice stabilities of ZrO2, Gd2O3 and Y2O3 and heat capacity measurements for the monoclinic phase Gd4Al2O9 and phase with garnet structure Gd3Al5O12. New data for the heat capacities of Gd2Zr2O7 (pyrochlore) and GdAlO3 (perovskite) as well as on the enthalpy of formation of fluorite solid solutions (Zr1−x Gd x )O2−x/2 were found to be in good agreement with calculated results. In comparison with the previous assessment, taking into account new experimental data resulted in a change of the melting character of the Gd4Al2O9 phase from a peritectic one to a congruent one in the Gd2O3-Al2O3 system. Correspondently, in the ternary system ZrO2-Gd2O3-Al2O3, the melting character of the three-phase assemblage Gd2O3 (B), Gd4Al2O9 and GdAlO3 changed from eutectic to transition type U. The T 0-lines for T/M and F/T diffusionless transformations and driving force of partitioning to equilibrium assemblage T + F were calculated in the ZrO2-Gd2O3-Y2O3 system.  相似文献   

19.
Sn-filled and Te-doped CoSb3 skutterudites (SnxCo8Sb23.25Te0.75) were synthesized by the encapsulated induction melting process. Single δ-phase was successfully obtained by subsequent heat treatment at 823 K for 6 days. Structural characterizations were carried out through X-ray diffraction studies. Transport properties such as the Seebeck coefficient, electrical resistivity, thermal conductivity, carrier concentration and mobility were measured and analyzed. The unfilled Co8Sb23.25Te0.75 sample showed n-type conductivity from 300 K to 700K. However, the Sn-filled SnxCo8Sb23.25Te0.75 showed n-type conductivity for z=0.25 and 0.5, and p-type conductivity for z=1.0 and 1.5 from 300 K to 700 K. Thermal conductivity was reduced by the impurity-phonon scattering. The dimensionless figure of merit (ZT) was remarkably improved over that of untreated CoSb3. However, the ZT value decreased when filling with z≥1.0 because the conductivity type was changed from n-type to p-type, thereby allowing bipolar conduction. The details are discussed in terms of the two-band model and the bipolar thermoelectric effect.  相似文献   

20.
(Bi0.5Na0.5)0.94Ba0.06TiO3 + x wt% Dy2O3 with x = 0-0.3 ceramics were synthesized by conventional solid-state processes. The effects of Dy2O3 on the microstructure, the piezoelectric and dielectric properties were investigated. X-ray diffraction pattern confirmed that the coexistence of tetragonal and rhombohedral phases in the (Bi0.5Na0.5)0.94Ba0.06TiO3 composition was not changed by adding 0.05-0.3 wt% Dy2O3. SEM images indicate that all the ceramics have pore-free microstructures with high density, and that doping of Dy2O3 inhibits the grain growth of the ceramics. The addition of Dy2O3 shows the double effects on decreasing the piezoelectric and dielectric properties for 0 < x < 0.15 when Dy3+ ions substitute B-site Ti4+ ions, and increasing the properties for 0.15 < x < 0.3 when Dy3+ ions enters into A-site of the perovskite structure. The optimum electric properties of piezoelectric constant d33 = 170 pC/N and the dielectric constant ?r = 1900 (at a frequency of 1 kHz) are obtained at x = 0.3.  相似文献   

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