Localized measurement of optical attenuation coefficients of atherosclerotic plaque constituents by quantitative optical coherence tomography

Optical coherence tomography (OCT) is a novel, high-resolution diagnostic tool that is capable of imaging the arterial wall and plaques. The differentiation between different types of atherosclerotic plaque is based on qualitative differences in gray levels and structural appearance. We hypothesize that a quantitative data analysis of the OCT signal allows measurement of light attenuation by the local tissue components, which can facilitate quantitative spatial discrimination between plaque constituents. High-resolution OCT images (at 800 nm) of human atherosclerotic arterial segments obtained at autopsy were histologically validated. Using a new, simple analysis algorithm, which incorporates the confocal properties of the OCT system, the light attenuation coefficients for these constituents were determined: for diffuse intimal thickening (5.5 +/- 1.2 mm(-1)) and lipid-rich regions (3.2 +/- 1.1 mm(-1)), the attenuation differed significantly from media (9.9 +/- 1.8 mm(-1)), calcifications (11.1 +/- 4.9 mm(-1) ) and thrombi (11.2 +/- 2.3 mm(-1)) (p < 0.01). These proof of principle studies show that simple quantitative analysis of the OCT signals allows spatial determination of the intrinsic optical attenuation coefficient of atherosclerotic tissue components within regions of interest. Combining morphological imaging by OCT with the observed differences in optical attenuation coefficients of the various regions may enhance discrimination between various plaque types.     

Compact-same-size 52- and 156 Mb/s SDH optical transceiver modules

Four types of compact SDH optical transceiver modules for intra- and interoffice transmission systems operating at 51.84- and 155.52-Mb/s have been incorporated with two types of packages, which are the same size for both bit rates. These modules contain both a transmitter and a receiver with a clock recovery function integrated in a single package. They were realized in the same size of L:50 mm×W:25 mm×H:8 mm (volume:10 cm³) and L:81 mm×W:31 mm×H:8 mm (volume:20-cm³) for intra- and interoffice system applications, respectively. The following technologies were used in their development: 1) three kinds of custom IC's were implemented using a 2-μm Si bipolar process, 2) surface-mounted SAW filters with the same size for both bit rates, and 3) high-density packaging technology to minimize receiver sensitivity degradation due to crosstalk noises. As a result, high receiver sensitivity of -43.2 and -42.7 dBm was achieved for 51.84-/s and 155.52-Mb/s interoffice transceiver modules with a wide dynamic range of over 30 dB. Also, in transceiver modules for intraoffice system applications, a receiver sensitivity of -37.7 and -31.7 dBm were obtained for both bit rates     

Full-wave analysis of choking characteristics of sleeve balun oncoaxial cables

An optimal design for a sleeve balun with maximum choking on a coaxial cable is determined using a full-wave body of revolution finite difference time domain method with perfectly matched layer boundary conditions. An analysis of the sensitivity of choke length L and outer diameter R₂ on choking effectiveness was carried out. A balun with L=77.5 mm (0.232λ₀) and R₂=8 mm on a cable with R₁=2 mm (R₂/R₁=4) results in an S₂₁ of -20 dB at 900 MHz and -15.5 dB at 2730 MHz. The isolation of the balun at 900 MHz is quickly degraded as the R₂ /R₁ ratio is reduced below 2. Increasing R₂/R₁ to 8, results in a reduction of optimum balun length L to approximately 0.215λ₀, approximately 14% shorter than the typical recommended length for an 'ideal' quarter-wave balun     

Intraretinal layer segmentation of macular optical coherence tomography images using optimal 3-D graph search

Current techniques for segmenting macular optical coherence tomography (OCT) images have been 2-D in nature. Furthermore, commercially available OCT systems have only focused on segmenting a single layer of the retina, even though each intraretinal layer may be affected differently by disease. We report an automated approach for segmenting (anisotropic) 3-D macular OCT scans into five layers. Each macular OCT dataset consisted of six linear radial scans centered at the fovea. The six surfaces defining the five layers were identified on each 3-D composite image by transforming the segmentation task into that of finding a minimum-cost closed set in a geometric graph constructed from edge/regional information and a priori determined surface smoothness and interaction constraints. The method was applied to the macular OCT scans of 12 patients (24 3-D composite image datasets) with unilateral anterior ischemic optic neuropathy (AION). Using the average of three experts' tracings as a reference standard resulted in an overall mean unsigned border positioning error of 6.1 $pm$ 2.9 $mu$m, a result comparable to the interobserver variability (6.9 $pm$ 3.3 $mu$m). Our quantitative analysis of the automated segmentation results from AION subject data revealed that the inner retinal layer thickness for the affected eye was 24.1 $mu$m (21%) smaller on average than for the unaffected eye $(p≪0.001)$, supporting the need for segmenting the layers separately.      

OCT无创检测技术的人体血糖平衡延迟时间研究

为了研究在人体血糖快速变化情况下,皮肤组织液糖浓度与血液(指血、静脉血)中血糖变化的延迟关系,采用光学相干层析技术,通过人体口服葡萄糖耐量测试和血糖钳夹实验,测量了随血糖变化的皮肤光衰减系数,并对人体血糖平衡延迟时间问题做了研究。为了避免由于延迟因素造成预测血糖值误差过大,选择700m ~800m以下皮肤深度的真皮网状层作为分析计算区域。结果表明,延迟时间一般随着皮肤区域深度的增加而缩短;在不同的皮肤深度区域,血糖平衡延迟时间存在一定的差异性。此研究有助于提高光学无创血糖检测的准确性和可靠性。     

Filling trenches on a SiO2 substrate with Cu using a hot refractory anode vacuum arc

First results of complete filling of 100 nm wide × 300 nm deep trenches with Cu using the expanding plasma plume from a hot refractory anode vacuum arc (HRAVA) plasma source are presented. The arc was ignited between a consumed water-cooled cylindrical Cu cathode (30 mm diameter) and a non-consumed W cylindrical anode (32 mm diameter, 30 mm height) that was heated by the arc. An arc current of 200 A was applied for periods of 180 s. The films were deposited on a Si substrate with a top SiO₂ layer. The substrates were exposed to the plasma plume for 120 s, while a shutter was open. The distance to the substrate from the electrode axis was varied over the range of about 74-122 mm. A pulsed bias voltage of −75 or −100 V, with a 60 kHz pulse repetition rate and a 50-80% duty cycle was applied to the substrate. The films were examined using a scanning electron microscope. The average film resistivity was measured with a four point probe. The deposition rate was as high as 425 nm/min, and the minimum average resistivity was 5.5 μΩ cm.     

半导体芯片银凸点微电极生长技术

银点微电极生长技术主要用于ISS181系列高压超高速开关二极管的电极成型,是一项制约ISS181封装国产化的瓶颈技术。该项目研究采用了自主开发的流动独立供液、独立供电,整体控制工艺,用于100 mm芯片电极成型,保证银凸点微电极高度40 靘,误差?5%。做到微区银点生长有效控制,大面积一致性好。在流量8 L/min,电压6.5 V,占空比10%的条件下,得到了最佳结果。     

A novel bidirectional CMOS transceiver for chip-to-chip optical interconnects

A novel bidirectional complementary metal-oxide-semiconductor (CMOS) transceiver for chip-to-chip optical interconnects operating at 2.5 Gb/s is proposed, which shares the common block of a receiver and a transmitter on a single chip. The share of the common block of two circuits makes it possible to save 55% or 20% of power dissipation, depending on the operating mode. The chip in 0.18-/spl mu/m CMOS technology occupies an area of 0.82/spl times/0.82 mm/sup 2/, 70% of the total area of a typical unshared transceiver chip. The transmitting and receiving modes of operation show -3-dB bandwidths of 2.2 and 2.4 GHz and electrical isolations of -28 and -40 dB, respectively.     

PMMN-PZT四元系压电陶瓷材料的研究

研究了铌镁酸铅铌锰酸铅锆钛酸铅(PMMN-PZT)四元系统压电陶瓷材料的配方、工艺条件及对各项性能指标的影响。在相界附近研究了四种不同配方的PMMN-PZT压电陶瓷,通过SEM观察、性能测试、居里温度表征等手段,确定了较佳的配方组成、材料的烧结温度及极化制度。研究表明:所得PMMN-PZT压电陶瓷的较佳组成为0.06Pb(Mg1/3Nb2/3)O3-0.06Pb(Mn1/3Nb2/3)O3-0.44PbZrO3-0.44PbTiO3+0.2%质量分数的CeO2,适宜的烧结温度为1200,极化电场为3000V/mm,极化温度为150。所制备的压电陶瓷的相对介电常数33T/0为1100;介质损耗tg为0.004;压电常数d33为290?0-12C/N,g33为28.0?0-3Vm/N;机电耦合系数kP为0.55;机械品质因数Qm为1200。     

基于跨波长调制和直接吸收光谱的宽量程多气体检测方法

针对可调谐半导体激光吸收光谱技术(Tunable Diode Laser Absorption Spectroscopy,TDLAS)在煤矿、石油化工领域进行气体浓度检测时,遇到的高精度、宽动态范围需求,采用时分复用的方法,将直接吸收光谱技术(Direct Absorption Spectroscopy,DAS)和波长调制光谱(Wavelength Modulation Spectroscopy,WMS)技术的优势相结合,完成了高精度、宽量程和免标定多气体检测系统的设计。设计激光器的驱动为线性扫描输出和叠加不同高频调制扫描输出的周期信号,用于完成高低浓度反演算法的时分复用计算,通过实验优化选择检测气体的吸光度拐点,实现对气体浓度的高精度、宽量程检测。在室温和常压下,通过实验分别对CH₄、CO和C₂H₂三种气体体积浓度进行检测,确定了两种算法最佳拐点吸光度约为0.026 cm^-1。系统对CH₄、CO和C₂H₂三种气体体积浓度的检测量程分...     

26 km-long polarisation-maintaining optical fibre

The letter describes the development of a long-length and large-diameter preform for polarisation-maintaining optical fibres. The preform was 470 mm in length and 48 mm in diameter. As a result, a 26 km-long PANDA fibre is developed. This fibre achieves crosstalk of ?22 dB, corresponding to h = 2.4 × 10-7m-1 and a transmission loss of 0.3 dB/km at a wavelength of 1.56 ?m. These fibres will be useful for future high-speed and medium-span coherent optical communications.     

低功率激光对细胞质膜通透性及细胞功能的影响

目的:探索低功率激光对细胞质膜通透性及细胞功能的影响。方法:以波长为632.8nm,功率密度为5.4mW/cm~2的氦氖激光照射人外周血淋巴细胞15、30、60分钟,并采用钙荧光指示剂Fura—2/Am定量测试法检测淋巴细胞内游离钙浓度和质膜Ca~(2+)—Mg~(2+)—ATP酶活性变化。结果:照射后淋巴细胞内游离钙浓度明显低于正常(P<0.05);同时细胞膜Ca~(2+)—Mg~(2+)—ATP酶活性增加(P<0.05);而且照射后细胞内游离钙浓度降低与质膜上Ca~(2+)—Mg~(2+)—ATP酶的激活呈负相关。结论:低功率激光照射激活细胞膜Ca~(2+)—Mg~(2+)—ATP酶活性,使细胞膜对钙通透性发生变化,且影响到细胞内Ca~(2+)贮存,造成细胞膜通透性和细胞功能的改变。     

双波段红外光学系统设计与像质评价

双波段/多波段成像技术受到普遍重视,使得双波段光学系统特别是中、长波红外成像系统成为研究的热门之一。设计了折反射式光学系统、离轴三反射式光学系统和全折射式光学系统,分析了3种不同类型光学系统及其成像性能。采用了能同时响应中、长波红外的探测组件,系统的主要技术指标为:工作波段3~5 m、8~12 m,F/#=2,2=5.74,f=100 mm,全视场畸变2%,空间频率16.7 lp/mm处的MTF0.4。对3种不同类型系统的特点进行分析和研究,给出了各种像差曲线和光学传递函数曲线,总结了3种不同类型光学系统的优缺点。     

The optical properties of rare earth Gd doped ZnO nanocrystals

We present a study of the light emission properties, from UV to blue spectral region, of Gd doped ZnO nanocrystals fabricated by means of a thermal evaporation vapor phase deposition process. The samples were grown from a mixed Zn/Gd source, with a molar percentage of Gd ranging from 0% (pure ZnO) to 5%, 10%, or 15%, in a constant O₂/Ar gas mixture flowing at 500° C. The pure ZnO nanocrystals exhibited a strong and predominant UV emission peaking at 375 nm. Besides the UV emission of ZnO nanocrystals, two strong blue emissions, located at 432 and 397 nm, are observed for the sample doped with 5% Gd. The strong blue emissions are mainly induced by the impurity levels of Gd introduced into the band gap of the ZnO nanocrystals. The UV emission of ZnO decreases as the doping concentration of Gd increases, and the blue emission is replaced by a broad defect emission due to the greater number of defects and impurities, as well as Gd₂O₃ on the surface. The results show that the optical properties of ZnO can be tuned by the doping concentration of Gd.     

High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

We report a novel approach in fabricating high-performance enhancement mode (E-mode) AlGaN/GaN HEMTs. The fabrication technique is based on fluoride-based plasma treatment of the gate region in AlGaN/GaN HEMTs and post-gate rapid thermal annealing with an annealing temperature lower than 500/spl deg/C. Starting with a conventional depletion-mode HEMT sample, we found that fluoride-based plasma treatment can effectively shift the threshold voltage from -4.0 to 0.9 V. Most importantly, a zero transconductance (g/sub m/) was obtained at V/sub gs/=0 V, demonstrating for the first time true E-mode operation in an AlGaN/GaN HEMT. At V/sub gs/=0 V, the off-state drain leakage current is 28 /spl mu/A/mm at a drain-source bias of 6 V. The fabricated E-mode AlGaN/GaN HEMTs with 1 /spl mu/m-long gate exhibit a maximum drain current density of 310 mA/mm, a peak g/sub m/ of 148 mS/mm, a current gain cutoff frequency f/sub T/ of 10.1 GHz and a maximum oscillation frequency f/sub max/ of 34.3 GHz.     

Surface passivation of InGaP/InGaAs/GaAs pseudomorphic HEMTs with ultrathin GaS film

We report on the successful surface passivation of wide recess InGaP/InGaAs/GaAs pseudomorphic HEMTs with MBE-grown ultrathin GaS film (2 nm) employing a single precursor, tertiarybutyl-galliumsulfide-cubane ([(t-Bu)GaS]/sub 4/). At the recess length of 1.1 /spl mu/m, a GaS-passivated device with a 0.5-/spl mu/m gate length has the maximum transconductance (g/sub m max/) of 347 mS/mm, which is about 40% higher than that of 240 mS/mm for a device without GaS passivation. We found that one of the causes of an increased g/sub m max/ is the decrease of sheet resistance on the recessed surface because GaS passivation has reduced the depletion layer. Meanwhile, the two-terminal gate-to-drain reverse breakdown voltage (BV/sub gd/) was reduced after GaS passivation. The BV/sub gd/ is independent of the recess length between gate and drain (L/sub gd/) for GaS-passivated devices, unlike that for devices without GaS passivation. According to our calculation of the BV/sub gd/ involving the effects of impact ionization and the interface state, the BV/sub gd/ becomes almost independent of the L/sub gd/, when the interface state density (N/sub int/) is below 1/spl times/10/sup 12/ cm/sup -2/. Then, the calculated surface potential at the recess region is less than 0 eV. This result suggests that GaS passivation can remarkably reduce the N/sub int/ at the recess region.     

BaGa4Se7与KTiOAsO4光参量振荡产生中红外激光性能对比

BaGa₄Se₇(硒镓钡,简称BGSe)与KTiOAsO₄(砷酸氧钛钾,简称KTA)均可在1.06 μm激光泵浦下产生中红外激光。首先仿真计算出两种非线性晶体的相位匹配曲线,结果显示:切割角为(56.3°, 0°)的BGSe晶体在I类相位匹配条件下和切割角为(90°, 0°)的KTA在II-A类相位匹配条件下均可产生~3.5 μm的闲频光。然后理论计算出BGSe (56.3°, 0°, I类)的有效非线性系数为?11.9 pm/V,KTA(90°, 0°,II-A类)的有效非线性系数为?3.2 pm/V;在其他条件相同的情况下,15 mm长BGSe (56.3°, 0°, I类) 的OPO振荡阈值是20 mm长KTA (90°, 0°, II-A类) OPO振荡阈值的35.11%。最后通过实验验证BGSe (56.3°, 0°, I类, 15 mm) 的振荡阈值小于KTA(90°, 0°, II-A类, 20 mm),输出的中红外激光能量大于KTA。因此,BGSe是一种极具应用前景的中红外非线性晶体。     

塑料表面激光选区活化及其电子线路成型

为了实现低成本的精细电子线路快速成型,以CuSO₄和NaH₂PO₂混合溶液为活化液,涂覆于基体表面形成活化层,采用450nm蓝光激光对基体表面活化层进行扫描,从而使基体活化,并结合化学镀铜,在激光扫描区域制备出了导电金属铜层。研究了CuSO₄和NaH₂PO₂的质量浓度、扫描速率和涂覆次数对镀层成型效果的影响,对活化后的基体进行了能谱分析,通过扫描电镜对各阶段镀层相貌进行了表征,并对镀层的结合性和导电性进行了检测。结果表明,当CuSO₄和NaH₂PO₂的质量浓度分别为10g/L和30g/L、扫描速率为320mm/s、涂覆次数为3次时,镀层覆盖率为100%;激光扫描后,活化层中的Cu2+被还原为Cu微粒;镀层线路微观结构均匀致密、轮廓清晰、边界整齐、结合性强,表面电阻趋近于0Ω,导电性良好。该工艺在一定程度上解决了激光诱导技术可操作性差以及贵金属涂布成本高的问题,具有较高的实用价值,在电子线路成型方面具有一定的应用前景。     

Design and characteristics of large displacement optical fiber switch

Plastic optical fiber (POF) is suitable for indoor local area network (LAN), for example, in-home or office networks, because of its flexibility and its ease of connection due to its relatively large core diameter. A 1/spl times/2 optical switch for indoor LAN using POF and a shape memory alloy (SMA) coil actuator with magnetic latches was successfully fabricated and tested. In this paper, the design concept and the characteristics of this switch are described. To achieve switching by the movement of a POF, large displacement is necessary because the core diameter is large (e.g., 0.486 mm). A SMA coil actuator is used for large displacement and a magnetic latching system is employed for fixing the position of the shifted POF. For this design, the insertion loss is 0.40 to 0.50 dB and crosstalk is more than -50 dB without index-matching oil. Switching speed is less than 0.5 s at a driving current of 80 mA. A cycling test was performed 1.4 million times at room temperature. Another optical fiber switch was fabricated and successfully actuated using plastic clad fiber (PCF). PCF also has a large core diameter (e.g., 0.20 mm) and optical switches using PCF will be useful for short distance networks between buildings.