SiGe BiCMOS工艺中HBT的关键制造工艺研究

研究了0.18 μm SiGe BiCMOS中的核心器件SiGe HBT的关键制造工艺,包括集电极的形成、SiGe基区的淀积、发射极窗口的形成、发射极多晶的淀积、深孔刻蚀等,指出了这些制造工艺的难点和问题,提出了解决办法,并报导了解决相关难题的实验结果.     

锗硅HBT BiCMOS工艺中的p-i-n开关二极管设计

介绍了一种集成在BiCMOS工艺的p-i-n开关二极管的器件。它由在STI下面的n型赝埋层作为p-i-n的n区,锗硅npn异质结双极型晶体管的重掺杂外基区作为p-i-n的p区。同时新开发了穿过场氧的深接触孔工艺用于赝埋层的直接引出,并采用p-i-n注入用于对i区进行轻掺杂。借助半导体工艺与器件仿真软件,得到了有源区尺寸、赝埋层到有源区的距离、p-i-n注入条件等关键工艺参数对p-i-n性能的影响。最后优化设计的p-i-n二极管,其在2.4 GHz频率下的指标参数,如插入损耗为-0.56 dB,隔离度为-22.26 dB,击穿电压大于15 V,它达到了WiFi电路中的开关器件的性能要求。     

Silicon-germanium BiCMOS HBT technology for wireless power amplifier applications

This paper discusses and illustrates the key device design issues for SiGe BiCMOS HBTs suitable for wireless power amplifier (PA) applications. Experimental results addressing ruggedness, ac performance, and safe operating area for high-breakdown SiGe HBTs built in several generations of BiCMOS technology are presented. Implications of recent high-performance SiGe HBT scaling achievements for BiCMOS technologies targeting wireless PA applications are considered. Circuit results for GSM, PCS, GPRS, and EDGE front-end modules have been obtained. A one-chip solution is demonstrated, including control circuitry and switching functionality, that supports all GPRS, PCS, and EDGE modes featuring output power at 33.8 dBm and overall power added efficiency of 37% withstanding voltage standing wave ratio conditions of 15:1.     

A SiGe HBT low noise amplifier using on-chip notch filter for K band wireless communication

In this paper a new notch filter topology has firstly been described. In order to improve the input match as well as enhance the gain on the operating frequency of 20.5 GHz, extra capacitor has firstly been added in the passive base-collector notch filter forming a new scheme, eliminating the operating-frequency (op) input mismatch in formal base-collector notch filters. EM simulations have shown that the LNA obtained 14.1 dB gain at 20.5 GHz and high image-rejection ratio (IRR) of 33.5 dB at image frequency of 15 GHz, and S₁₁ of -15 dB was obtained compared to −8 dB without notch filter at operating frequency, NF was below 5 dB at gain peak frequency, power consumption was 18 mW at 3 V voltage supply, and IIP3 was 3.43 dBm ensuring a high linearity in SiGe bipolar process.     

Microwave and noise performance of SiGe BiCMOS HBT under cryogenic temperatures

In this letter, the microwave and noise performance of SiGe heterojunction bipolar transistors (HBTs) has been characterized when cooling down the temperature. It was found that SiGe HBTs (fabricated in the framework of BiCMOS process) exhibit a maximum oscillation frequency f/sub max/ of about 292 GHz at 78 K, which represents an increase of about 30% with the value measured at room temperature. The noise performance has also been characterized at cryogenic temperatures, using an original de-embedding approach. Then, using the Hawkin's noise model in conjunction with an accurate small signal equivalent extraction, the four noise parameters have been estimated. The noise figure with a 50 /spl Omega/ source impedance was measured to be equal to 1.5 dB at 40 GHz at 78 K, which is one of the lowest value reported for BiCMOS SiGe HBT in the millimeter-wave range.     

Very-high-speed InP/InGaAs HBT ICs for optical transmission systems

High-speed ICs for 20-40-Gbit/s time-division multiplexing (TDM) optical transmission systems have been designed and fabricated by using InP/InGaAs heterojunction-bipolar-transistor (HBT) technology. This paper describes four analog ICs and four digital ICs: a five-section cascode distributed amplifier with a gain of 9.5 dB and a bandwidth of 50 GHz, a three-section single-end-to-differential converter with a bandwidth of 40 GHz, a cascode differential amplifier with a gain of 10.5 dB and a bandwidth of 64 GHz, a preamplifier with a gain of 41.9 dBΩ and a bandwidth of 39 GHz, a modulator driver with an output voltage swing of 3.2 V peak-to-peak and rise and fall times of 16 and 15 ps, a 40-Gbit/s selector, a 20-Gbit/s D-type flip-flop, and a static frequency divider with an operating range of 2.0-44.0 GHz. All the ICs were measured with on-wafer RF probes     

一种采用BiCMOS工艺的SiGe HBT基区生长方法

为抑制SiGeHBT基区生长过程中岛状物生成,降低位错密度,基于渐变温度控制方法和图形外延技术,结合BiCMOS工艺,研发了在Si衬底上制备高质量Si1-xGex基区的外延生长方法。通过原子力显微镜(AFM)、扫描电子显微镜(SEM)、X射线双晶衍射(XRD)测试,显示所生长的Si1,Gex基区表面粗糙度为0.45nm,穿透位错密度是0.3×103～1.2×103cm-2。,在窗口边界与基区表面未发现位错堆积与岛状物。结果表明,该方法适宜生长高质量的SiGeHBT基区,可望应用于SiGeBiCMOS工艺中HBT的制备。     

Smart Phased Array SoCs: A Novel Application for Advanced SiGe HBT BiCMOS Technology

As BiCMOS IC technology continues to advance in scaling and performance, new applications are continually enabled. One such concept is a smart phased array system on a chip (SoC). The combination of high-performance SiGe heterojunction bipolar transistor (HBT) bipolar devices, well-characterized RF/analog passive components, and dense CMOS digital technology provides the capability to create large multielement, electronically tunable phased arrays with onboard processing intelligence, inside a single die. This SoC will have superior characteristics of lower cost, weight, and size as compared to the large multichip, multitechnology, and multipackage systems in deployment today. Furthermore, using reconfigurable logic and embedded memory, this SoC has the advantage of dynamic software and digital signal processing engine updates, without expensive redesigns of the chip. This publication will describe the necessary ingredients to create such an SoC as well as relevant applications of smart phased arrays that require an SiGe HBT BiCMOS technology. Potential markets for this technology include communications systems, weather tracking, radio astronomy, automotive radar, cellular basestation capacity improvement, satellite and aerial resource imaging, ground-level airplane collision avoidance, as well as military tracking and guidance systems.     

High efficiency wireless optical links in high transmission speed wireless optical communication networks

Power link budgets are prepared for wireless optical communication systems to illustrate the optical losses that happen during transmission. This paper has presented optical wireless links, which offer ultra multi gigabit per second data rates and low system complexity. For ground space and/or terrestrial communication systems, these links suffer from atmospheric loss mainly due to fog, and scintillation. Optical wireless links provide high bandwidth solution to the last mile access bottleneck. However, an appreciable availability of the link is always a concern. Wireless optical links are highly weather dependent, and fog is the major attenuating factor reducing the link availability. Link margin, received signal power, transmission bit rate, bit rate distance product, signal‐to‐noise ratio, and BER are the major interesting design parameters in the current study. Copyright © 2013 John Wiley & Sons, Ltd.     

Optimization of urban optical wireless communication systems

Urban optical wireless communication systems are considered a "last mile" technology. An optical wireless communication system uses the atmosphere as a propagation medium. In order to provide line-of-sight (LOS), the transceivers are placed on high-rise buildings. However, dynamic wind loads, thermal expansion, and weak earthquakes cause buildings to sway. These sways require the designer to increase the transmitter beam divergence angle so as to maintain LOS between the transmitter and the receiver. It is clear that an overly wide divergence angle increases the required laser power, and, as a result, terminal cost and complexity increase. On the other hand, an overly narrow beam divergence angle may result in cutoff in communication when there is building sway. In this paper, we derive a mathematical model to minimize transmitter power and optimize transmitter gain (divergence angle) as a function of the building-sway statistics, the communication system parameters, and the required bit-error probability (BEP). Reduction in laser power could improve overall system performances and cost. For example, for BEP of 10/sup -9/, we can attain at least a 4-dB reduction of the required transmitter power in comparison to a system with both half and twice the optimum beam divergence angle.     

A 5-6 GHz SiGe HBT monolithic active isolator for improving reverse isolation in wireless systems

A monolithic active isolator combining common-base and common-collector configurations of SiGe heterojunction bipolar transistors (HBT) is used to improve reverse isolation in wireless system applications. This simple active isolator results in an insertion loss of 2 dB and input IP3 of +0.7 dBm over 5-6 GHz with a 1.8-mA current flow for the core circuit of a 3-V supply.     

Multiple spot diffusing geometries for indoor optical wireless communication systems

In order to improve the performance of indoor optical wireless communication links, two multispot diffusing geometries based on diamond and line strip spot distribution geometries are proposed, analysed and compared to the known uniform spot distribution. Such geometries combine the advantages of the diffuse and the line‐of‐sight systems, giving great robustness and ease of use. The novel line strip multibeam transmitter geometry has resulted in a receiver signal‐to‐noise ratio (SNR) improvement of about 4 dB compared to the conventional diffuse system as well as a significant reduction in the pulse spread. Simulation and comparison results for both the conventional diffuse system and the three multispot diffusing geometries are presented. Further, pulse responses, SNR, and delay spread results at various locations are presented. Copyright © 2003 John Wiley & Sons, Ltd.     

Integrated frequency synthesiser in SiGe BiCMOS technology for 60 and 24 GHz wireless applications

A fully integrated silicon-based frequency synthesiser for 60 and 24 GHz applications is presented. The relative frequency tuning range is 5%, and the total power dissipation is 135 mW at 2.3 V supply voltage. Phase noise at 48 GHz is lower than -98 dBc/Hz at 1 MHz offset over the whole tuning range, which is 8 dB lower than in all previous silicon-based solutions     

High-speed optical transmission systems using advanced monolithicIC technologies

The authors discuss the design and performance of monolithic ICs for multigigabit lightwave transmission systems including direct detection and coherent detection. The required function and performance of a lightwave transmitter and receiver are discussed. The fabricated ICs and their application to the transmission system are shown in a direct system. Microwave monolithic ICs for lightwave heterodyne detection and an interconnection technique are introduced. Future trends of ICs are discussed     

High-sensitivity BiCMOS OEIC for optical storage systems

A new BiCMOS optoelectronic integrated circuit (OEIC) for applications in advanced optical storage systems is presented. It is optimized with respect to high sensitivity and high speed. The photodiode and the amplifier are monolithically integrated on the same substrate in a commercial 0.8-/spl mu/m BiCMOS process. Analytical expressions for the compensation capacitors and for the bandwidth of the OEIC are derived. Neglecting antireflection coating, no process modifications are necessary to produce the integrated photodiodes. A new offset compensation scheme is implemented in the amplifiers to allow for a small chip area and low power consumption. The OEIC shows a sensitivity of 43.3 mV//spl mu/W in combination with a -3-dB bandwidth of 60.2 MHz.     

基于1.5 μm BiCMOS 工艺的SiGe HBT器件设计优化

基于非选择性外延,自对准注入技术,集电区选择性注入和快速热退火工艺,提出了一种适用于1.5μm BiCMOS集成技术的SiGe HBT器件结构。该结构具有内基区薄,外基区厚,B/E结两侧杂质浓度低,发射极/基极自对准诸优点。利用TSuprem4和Medici进行工艺模拟和电学特性仿真。结果表明,所设计的的SiGe HBT具有良好的电学特性,其最大电流增益为210,当Vce=2.5 V时,截止频率达到65 GHz,验证了器件结构设计的合理性。     

50-Gb/s SiGe BiCMOS 4:1 multiplexer and 1:4 demultiplexer for serial communication systems

4:1 multiplexer and 1:4 demultiplexer ICs targeting SONET OC-768 applications are reported. The ICs have been implemented using a 120-GHz-f/sub T/ 0.18-/spl mu/m SiGe BiCMOS process. Both ICs have been packaged to enable bit error rate testing by connecting their serial interfaces. Error-free operation has been achieved for both circuits at data rates beyond 50 Gb/s. At a -3.6-V supply voltage, the multiplexer and demultiplexer dissipate 410 and 430 mA, respectively. Switching behavior of the 4:1 multiplexer has also been checked up to 70 Gb/s.     

Redundant wireless communication technologies for real-time surveillance

Catastrophic events including those sparked by terrorism have cast a pall over society in recent years. Events such as September 11th or the bombing of the Alfred P. Murrah Federal Building in Okalahoma City demonstrated a sudden surge in telephone call volume. These events indicated that communications systems, including cellular, can fail as a result from damage or capacity overload. Cellular systems have significant capacity given the limited radio spectrum allocated but much like airlines that oversell seats because inevitably some passengers do not show up, cellular providers typically have more customers than operational spectrum can handle in aggregate. Normally this is perfectly acceptable because a high percentage of the customer base would never be making calls simultaneously; except in an emergency. Such emergencies can be active or passive in nature. The release of dangerous airborne agents is one such scenario. The purpose of this study was to use a portable air particulate sensor as a data acquisition platform to evaluate the capability of real-time data throughput using existing wireless topologies, Java, eXtensible Markup Language (XML) and Internet protocols when cellular transmission frequencies are compromised. Results show that high levels of cellular voice traffic in a given area can hamper simultaneous data communications; however, Low Earth Orbiting Satellites (LEOS) can provide redundancy.     

无线光通信系统大气信道特性的分析研究

介绍了大气激光通信的基本原理、关键技术和应用领域;分析了大气信道对无线光通信系统的影响,着重分析大气的衰减效应和大气的湍流效应;指出在我国特定地区进行大气信道测试的必要性;最后介绍和分析了大气信道特性的主要测试方法.