Mn atomic layers under inert covers of graphene and hexagonal boron nitride prepared on Rh(111)

Intercalation of metal atoms into the interface of graphene and its supporting substrate has become an intriguing topic for the sake of weakening the interface coupling and constructing metal atomic layers under inert covers. However, this novel behavior has rarely been reported on the analogous hexagonal boron nitride (h-BN) synthesized on metal substrates. Here, we describe a comparative study of Mn intercalation into the interfaces of graphene/Rh(111) and h-BN/Rh(111), by using atomically-resolved scanning tunneling microscopy (STM) and density functional theory (DFT) calculations. The intercalation was performed by annealing as-deposited Mn clusters, and the starting temperature of Mn intercalation into h-BN/Rh(111) was found to be ～80 °C higher than that for graphene/Rh(111). Moreover, the intercalated islands of h-BN/Mn/Rh(111) usually possess more irregular shapes than those of graphene/Mn/Rh(111), as illustrated by temperature-dependent STM observations. All these experimental facts suggest a stronger interaction of Mn with h-BN/Rh(111) than that with graphene/Rh(111).      

Different growth behaviors of ambient pressure chemical vapor deposition graphene on Ni(111) and Ni films: A scanning tunneling microscopy study

Graphene growth on the same metal substrate with different crystal morphologies, such as single crystalline and polycrystalline, may involve different mechanisms. We deal with this issue by preparing graphene on single crystal Ni(111) and on ∼300 nm thick Ni films on SiO₂ using an ambient pressure chemical vapor deposition (APCVD) method, and analyze the different growth behaviors for different growth parameters by atomically-resolved scanning tunneling microscopy (STM) and complementary macroscopic analysis methods. Interestingly, we obtained monolayer graphene on Ni(111), and multilayer graphene on Ni films under the same growth conditions. Based on the experimental results, it is proposed that the graphene growth on Ni(111) is strongly templated by the Ni(111) lattice due to the strong Ni-C interactions, leading to monolayer graphene growth. Multilayer graphene flakes formed on polycrystalline Ni films are usually stacked with deviations from the Bernal stacking type and show small rotations among the carbon layers. Considering the different substrate features, the inevitable grain boundaries on polycrystalline Ni films are considered to serve as the growth fronts for bilayer and even multilayer graphene.      

Graphene growth on Ni(111) by transformation of a surface carbide

A novel growth mechanism of graphene on Ni(111) has been discovered that occurs at temperatures below 460 °C. At these conditions, a surface-confined nickel-carbide phase coexists with single layer graphene. The graphene grows by in-plane transformation of the carbide along a one-dimensional phase-boundary, which is distinctively different from known growth processes on other transition metals and on Ni above 460 °C, where carbon atoms attach to "free" edges of graphene islands.     

Growth Mechanism of Metal Clusters on a Graphene/Ru(0001) Template

Using first‐principles calculations combined with scanning tunneling microscopy experiments, we investigated the adsorption configurations, electronic structures and the corresponding growth mechanism of several transition metal (TM) atoms (Pt, Ru, Ir, Ti, Pd, Au, Ag, and Cu) on a graphene/Ru(0001) moiré template (G/Ru(0001)) at low coverage. We find that Pt, Ru, Ir, and Ti selectively adsorb on the fcc region of G/Ru(0001) and form ordered dispersed metal nanoclusters. This behavior is due to the unoccupied d orbital of the TM atoms and the strong sp³ hybridization of carbon atoms in the fcc region of G/Ru(0001). Pd, Au, Ag, and Cu form nonselective structures because of the fully occupied d orbital. This mechanism can be extended to metals on a graphene/Rh(111) template. By using Pt as an example, we provide a layer by layer growth path for Pt nanoclusters in the fcc region of the G/Ru(0001). The simulations of growth mechanism agree well with the experimental observations. Moreover, they also provide guidance for the selection of suitable metal atoms to form ordered dispersed metal nanoclusters on similar templates.     

Effects of polycrystalline cu substrate on graphene growth by chemical vapor deposition

Chemical vapor deposition of graphene on Cu often employs polycrystalline Cu substrates with diverse facets, grain boundaries (GBs), annealing twins, and rough sites. Using scanning electron microscopy (SEM), electron-backscatter diffraction (EBSD), and Raman spectroscopy on graphene and Cu, we find that Cu substrate crystallography affects graphene growth more than facet roughness. We determine that (111) containing facets produce pristine monolayer graphene with higher growth rate than (100) containing facets, especially Cu(100). The number of graphene defects and nucleation sites appears Cu facet invariant at growth temperatures above 900 °C. Engineering Cu to have (111) surfaces will cause monolayer, uniform graphene growth.     

Carbon nanotube synthesis from propane decomposition on a pre-treated Ni overlayer

Growth of carbon nanotubes (CNTs) was performed by atmospheric pressure chemical vapour deposition (APCVD) of propane on Si(111) with a pre-treated Ni overlayer acting as a catalyst. Prior to the growth of CNTs, a thin film of Ni was deposited on Si(111) substrate by evaporation and heat treated at 900°C. The growth of nanotubes was carried out at 850°C using propane as a source of carbon. Distribution of the catalyst particles over the Si substrate was analysed before and after heat treatment by atomic force microscopy (AFM). The X-ray diffraction (XRD) pattern of the grown material revealed that they are graphitic in nature. Field emission scanning electron microscopy (FESEM) was used to investigate the growth process and it was found that a catalytic particle was always situated at the tip of the tube thus implying a tip growth mechanism. Evidence for the presence of radial breathing mode from multi-wall nanotubes (MWNTs) in the grown sample was obtained from micro-Raman analysis. Finally, high-resolution transmission electron microscopic (HRTEM) analysis confirmed that the graphene layers of the CNTs are well ordered with typical 0·34 nm spacing.     

How Does Graphene Grow? Easy Access to Well‐Ordered Graphene Films

The selective formation of large‐scale graphene layers on a Rh‐YSZ‐Si(111) multilayer substrate by a surface‐induced chemical growth mechanism is investigated using low‐energy electron diffraction, X‐ray photoelectron spectroscopy, X‐ray photoelectron diffraction, and scanning tunneling microscopy. It is shown that well‐ordered graphene layers can be grown using simple and controllable procedures. In addition, temperature‐dependent experiments provide insight into the details of the growth mechanisms. A comparison of different precursors shows that a mobile dicarbon species (e.g., C₂H₂ or C₂) acts as a common intermediate for graphene formation. These new approaches offer scalable methods for the large‐scale production of high‐quality graphene layers on silicon‐based multilayer substrates.     

Orientation‐Dependent Strain Relaxation and Chemical Functionalization of Graphene on a Cu(111) Foil

Epitaxial graphene grown on single crystal Cu(111) foils by chemical vapor deposition is found to be free of wrinkles and under biaxial compressive strain. The compressive strain in the epitaxial regions (0.25–0.40%) is higher than regions where the graphene is not epitaxial with the underlying surface (0.20–0.25%). This orientation‐dependent strain relaxation is through the loss of local adhesion and the generation of graphene wrinkles. Density functional theory calculations suggest a large frictional force between the epitaxial graphene and the Cu(111) substrate, and this is therefore an energy barrier to the formation of wrinkles in the graphene. Enhanced chemical reactivity is found in epitaxial graphene on Cu(111) foils as compared to graphene on polycrystalline Cu foils for certain chemical reactions. A higher compressive strain possibly favors lowering the formation energy and/or the energy gap between the initial and transition states, either of which can lead to an increase in chemical reactivity.     

Transforming C60 molecules into graphene quantum dots

The fragmentation of fullerenes using ions, surface collisions or thermal effects is a complex process that typically leads to the formation of small carbon clusters of variable size. Here, we show that geometrically well-defined graphene quantum dots can be synthesized on a ruthenium surface using C(60) molecules as a precursor. Scanning tunnelling microscopy imaging, supported by density functional theory calculations, suggests that the structures are formed through the ruthenium-catalysed cage-opening of C(60). In this process, the strong C(60)-Ru interaction induces the formation of surface vacancies in the Ru single crystal and a subsequent embedding of C(60) molecules in the surface. The fragmentation of the embedded molecules at elevated temperatures then produces carbon clusters that undergo diffusion and aggregation to form graphene quantum dots. The equilibrium shape of the graphene can be tailored by optimizing the annealing temperature and the density of the carbon clusters.     

Surface crystallographic structure insensitive growth of oriented graphene domains on Cu substrates

Cu-based chemical vapor deposition method can produce large-area graphene films, usually polycrystalline films with grain boundaries as the main defects. One way to reduce grain boundaries is to grow oriented graphene domains (OGDs), which can ultimately perfectly integrate. In contrast to previously reported methods of limiting OGD growth on Cu (1 1 1), we find that OGDs can grow on Cu substrates with a large surface crystallographic structure tolerance. Density functional theory calculations show that this is due to the single lowest energy state of graphene nucleation. The growth temperature is crucial. It must be high enough (1045 °C) to suppress mis-OGD nucleation, but not too high (1055 °C) to deteriorate OGD growth. Mis-OGD nucleation can also be caused by C impurity in Cu grains, which can be depleted by thermal pretreatment of the substrate in an oxidizing atmosphere. On the other hand, OGD growth is not sensitive to the atmosphere at growth stage within the range that we have tested.     

Adlayer‐Free Large‐Area Single Crystal Graphene Grown on a Cu(111) Foil

To date, thousands of publications have reported chemical vapor deposition growth of “single layer” graphene, but none of them has described truly single layer graphene over large area because a fraction of the area has adlayers. It is found that the amount of subsurface carbon (leading to additional nuclei) in Cu foils directly correlates with the extent of adlayer growth. Annealing in hydrogen gas atmosphere depletes the subsurface carbon in the Cu foil. Adlayer‐free single crystal and polycrystalline single layer graphene films are grown on Cu(111) and polycrystalline Cu foils containing no subsurface carbon, respectively. This single crystal graphene contains parallel, centimeter‐long ≈100 nm wide “folds,” separated by 20 to 50 µm, while folds (and wrinkles) are distributed quasi‐randomly in the polycrystalline graphene film. High‐performance field‐effect transistors are readily fabricated in the large regions between adjacent parallel folds in the adlayer‐free single crystal graphene film.     

Low‐Temperature Conversion of Alcohols into Bulky Nanoporous Graphene and Pure Hydrogen with Robust Selectivity on CaO

The direct conversion of biorenewable alcohols into value‐added graphene and pure hydrogen (H₂) at benign conditions is an important challenge, especially, considering the open carbon‐reduced cycle. In this study, it is demonstrated that inexpensive calcium oxide (CaO, from eggshells) can transform alcohols into bulky nanoporous graphene and pure hydrogen (≈99%) with robust selectivity at the temperature as low as 500 °C. Consequently, the growth of graphene can follow the direction of alcohol flow and uniformly penetrate into bulky nanoporous CaO platelets longer than 1 m without clogging. The experimental results and density functional theory calculations demonstrate that alcohol molecules can be catalytically carbonized on the surface of CaO at low temperature. The concept of the comprehensive utilization of biomass‐derived alcohols offers a carbon‐negative cycle for mitigating global warming and the energy demand.     

Real-time microscopy of graphene growth on epitaxial metal films: role of template thickness and strain

Epitaxial transition metal films have recently been introduced as substrates for the scalable synthesis of transferable graphene. Here, real-time microscopy is used to study graphene growth on epitaxial Ru films on sapphire. At high temperatures, high-quality graphene grows in macroscopic (>100 μm) domains to full surface coverage. Graphene nucleation and growth characteristics on thin (100 nm) Ru films are consistent with a pure surface chemical vapor deposition process, without detectable contributions from C segregation. Experiments on thicker (1 μm) films show a systematic suppression of the C uptake into the metal to levels substantially below those expected from bulk C solubility data, consistent with a strain-induced reduction of the C solubility due to gas bubbles acting as stressors in the epitaxial Ru films. The results identify two powerful approaches--i) limiting the template thickness and ii) tuning the interstitial C solubility via strain--for controlling graphene growth on metals with high C solubility, such as Ru, Pt, Rh, Co, and Ni.     

Radial anisotropic growth of rhodium nanoparticles

In this contribution, we report the synthesis of rhodium multipods that result from a homogeneous seeded growth mechanism. Small Rh nanocrystal seeds were synthesized by the reduction of RhCl3 in ethylene glycol in the presence of PVP. These seed particles could be subsequently used, without isolation, to form larger rhodium nanoparticles. A reaction temperature of 190 degrees C led to isotropic cubic Rh particles. Lowering the reaction temperature resulted in more anisotropic growth, which gave Rh cubes with horns at 140 degrees C, and Rh multipods at 90 degrees C. The anisotropic growth occurred in the (111) direction, as determined by high-resolution TEM (HRTEM). Anisotropic growth proceeds via a seeded growth mechanism, and not by oriented attachment.     

Low‐Temperature and Rapid Growth of Large Single‐Crystalline Graphene with Ethane

Future applications of graphene rely highly on the production of large‐area high‐quality graphene, especially large single‐crystalline graphene, due to the reduction of defects caused by grain boundaries. However, current large single‐crystalline graphene growing methodologies are suffering from low growth rate and as a result, industrial graphene production is always confronted by high energy consumption, which is primarily caused by high growth temperature and long growth time. Herein, a new growth condition achieved via ethane being the carbon feedstock to achieve low‐temperature yet rapid growth of large single‐crystalline graphene is reported. Ethane condition gives a growth rate about four times faster than methane, achieving about 420 µm min^?1 for the growth of sub‐centimeter graphene single crystals at temperature about 1000 °C. In addition, the temperature threshold to obtain graphene using ethane can be reduced to 750 °C, lower than the general growth temperature threshold (about 1000 °C) with methane on copper foil. Meanwhile ethane always keeps higher graphene growth rate than methane under the same growth temperature. This study demonstrates that ethane is indeed a potential carbon source for efficient growth of large single‐crystalline graphene, thus paves the way for graphene in high‐end electronical and optoelectronical applications.     

Catalytic role of gold nanoparticle in GaAs nanowire growth: a density functional theory study

The energetics of Ga, As, and GaAs species on the Au(111) surface (employed as a model for Au nanoparticles) is investigated by means of density functional calculations. Apart from formation of the compound Au(7)Ga(2), Ga is found to form a surface alloy with gold with comparable ΔH ~ -0.5 eV for both processes. Dissociative adsorption of As(2) is found to be exothermic by more than 2 eV on both clean Au(111) and AuGa surface alloys. The As-Ga species formed by reaction of As with the surface alloy is sufficiently stable to cover the surface of an Au particle in vacuo in contact with a GaAs substrate. The results of the calculations are interpreted in the context of Au-catalyzed growth of GaAs nanowires. We argue that arsenic is supplied to the growth zone of the nanowire mainly by impingement of molecules on the gold particle and identify a regime of temperatures and As(2) partial pressures suitable for Au-catalyzed nanowire growth in molecular beam epitaxy.     

Greatly Enhanced Anticorrosion of Cu by Commensurate Graphene Coating

Metal corrosion is a long‐lasting problem in history and ultrahigh anticorrosion is one ultimate pursuit in the metal‐related industry. Graphene, in principle, can be a revolutionary material for anticorrosion due to its excellent impermeability to any molecule or ion (except for protons). However, in real applications, it is found that the metallic graphene forms an electrochemical circuit with the protected metals to accelerate the corrosion once the corrosive fluids leaks into the interface. Therefore, whether graphene can be used as an excellent anticorrosion material is under intense debate now. Here, graphene‐coated Cu is employed to investigate the facet‐dependent anticorrosion of metals. It is demonstrated that as‐grown graphene can protect Cu(111) surface from oxidation in humid air lasting for more than 2.5 years, in sharp contrast with the accelerated oxidation of graphene‐coated Cu(100) surface. Further atomic‐scale characterization and ab initio calculations reveal that the strong interfacial coupling of the commensurate graphene/Cu(111) prevents H₂O diffusion into the graphene/Cu(111) interface, but the one‐dimensional wrinkles formed in the incommensurate graphene on Cu(100) can facilitate the H₂O diffusion at the interface. This study resolves the contradiction on the anticorrosion capacity of graphene and opens a new opportunity for ultrahigh metal anticorrosion through commensurate graphene coating.     

Interplay of wrinkles, strain, and lattice parameter in graphene on iridium

Following graphene growth by thermal decomposition of ethylene on Ir(111) at high temperatures we analyzed the strain state and the wrinkle formation kinetics as function of temperature. Using the moiré spot separation in a low energy electron diffraction pattern as a magnifying mechanism for the difference in the lattice parameters between Ir and graphene, we achieved an unrivaled relative precision of ±0.1 pm for the graphene lattice parameter. Our data reveals a characteristic hysteresis of the graphene lattice parameter that is explained by the interplay of reversible wrinkle formation and film strain. We show that graphene on Ir(111) always exhibits residual compressive strain at room temperature. Our results provide important guidelines for strategies to avoid wrinkling.     

Epitaxial Growth of 6 in. Single‐Crystalline Graphene on a Cu/Ni (111) Film at 750 °C via Chemical Vapor Deposition

The future electronic application of graphene highly relies on the production of large‐area high‐quality single‐crystal graphene. However, the growth of single‐crystal graphene on different substrates via either single nucleation or seamless stitching is carried out at a temperature of 1000 °C or higher. The usage of this high temperature generates a variety of problems, including complexity of operation, higher contamination, metal evaporation, and wrinkles owing to the mismatch of thermal expansion coefficients between the substrate and graphene. Here, a new approach for the fabrication of ultraflat single‐crystal graphene using Cu/Ni (111)/sapphire wafers at lower temperature is reported. It is found that the temperature of epitaxial growth of graphene using Cu/Ni (111) can be reduced to 750 °C, much lower than that of earlier reports on catalytic surfaces. Devices made of graphene grown at 750 °C have a carrier mobility up to ≈9700 cm² V^?1 s^?1 at room temperature. This work shines light on a way toward a much lower temperature growth of high‐quality graphene in single crystallinity, which could benefit future electronic applications.     

Promoted Glycerol Oxidation Reaction in an Interface‐Confined Hierarchically Structured Catalyst

Confined catalysis in a 2D system is of particular interest owing to the facet control of the catalysts and the anisotropic kinetics of reactants, which suppress side reactions and improve selectivity. Here, a 2D‐confined system consisting of intercalated Pt nanosheets within few‐layered graphene is demonstrated. The strong metal–substrate interaction between the Pt nanosheets and the graphene leads to the quasi‐2D growth of Pt with a unique (100)/(111)/(100) faceted structure, thus providing excellent catalytic activity and selectivity toward one‐carbon (C1) products for the glycerol oxidation reaction. A hierarchically porous graphene architecture, grown on carbon cloth, is used to fabricate the confined catalyst bed in order to enhance the mass‐diffusion limitation in interface‐confined reactions. Owing to its unique 3D porous structure, this graphene‐confined Pt catalyst exhibits an extraordinary mass activity of 2910 mA mg_Pt ^?1 together with a formate selectivity of 79% at 60 °C. This paves the way toward rational designs of heterogeneous catalysts for energy‐related applications.