The influence of molecular structure modification on the photoluminescence and optical absorption of thin copper phthalocyanine films in the near-IR range

We have studied the luminescence and optical absorption of thin films of copper phthalocyanine (CuPc) with a modified molecular structure of the peripheral fragments. The coefficient of absorption in the near-IR and visible range (absorption by defects) and the photoluminescence spectra exhibit correlated changes depending on the modification of the CuPc structure.     

Optical absorption of radio frequency sputtered GaAs(Ti) films

Composition and optical absorption of thin films of GaAs(Ti) and GaAs, deposited by sputtering on glass substrates under different process conditions, have been investigated. The thin films obtained are typically 200 nm thick. ToF–SIMS measurements show a quite constant concentration and good uniformity of Ti profiles along the GaAs(Ti) layers in all cases and EPMA results indicate that Ti content increases with the substrate temperature in the sputtering process. Measurements of the transmittance and reflectance spectra of the GaAs and GaAs(Ti) thin films have been carried out. In the optical characterization of the films it is found that optical absorption is enhanced in all samples containing Ti. The determination of the optical gap from the optical absorption, shows optical gap variations from 1.15 to 1.29 eV in the GaAs thin films, and from 0.83 to 1.13 eV in the GaAs(Ti) thin films. The differences in absorption and EgTAUC observed between samples of GaAs and GaAs(Ti) are consistent with the presence of an intermediate band.     

Nanostructured organic-inorganic photodiodes with high rectification ratio

High quality organic-inorganic heterojunction photodiodes based on nanostructured copper (II) phthalocyanine (CuPc) and intrinsic zinc oxide (i-ZnO) have been fabricated. The i-ZnO thin films/layers were grown by RF magnetron sputtering on clean indium tin oxide (ITO) coated glass substrates. These films have been characterized by optical absorption and field emission scanning electron microscopy (FESEM). CuPc thin films deposited at room temperature on i-ZnO have exhibited a change in their surface morphology with the post-deposition annealing temperature under normal atmosphere. The electrical dark conductivity and the photoconductivity of ITO/i-ZnO/CuPc/Au sandwich structures have been measured under various photoexcitation intensities using a xenon light source. The devices have shown excellent reproducibility of their electrical characteristics and high rectification ratios. The highest rectification ratio is nearly 831 calculated above the threshold voltage at room temperature for the sample annealed at 250?°C (i.e.?Pc 250). The effects of the annealing temperature of CuPc on the surface morphology, rectification ratio, and optical properties have been discussed.     

Low Temperature DC Sputtering Deposition on Indium-Tin Oxide Film and Its Application to Inverted Top-emitting Organic Light-emitting Diodes

Indium tin oxide （ITO） ultrathin films were prepared on glass substrate by DC （direct current） magnetron sputtering technique with the assistance of H2O vapor to avoid potential surface damage. The film properties were characterized by X-ray diffraction （XRD） technique, four-point probe method and spectrophotometer. The results show that the deposited ITO film with introduced H2O during sputtering process was almost amorphous. The average visible light transmission of 100 nm ITO film was around 85% and square resistivity was below 80 Ω/square. The film was used as the transparent anode to fabricate an inverted top-emitting organic light-emitting diodes （IT-OLEDs） with the structure of glass substrate/Alq3 （40 nm）/NPB （15 nm）/CuPc （x nm）/ITO anode （100 nm）, where the film thickness of CuPc was optimized. It was found that the luminance of this IT-OLEDs was improved from 25 cd/m^2 to more than 527 cd/m^2 by increasing the thickness of CuPc, and luminance efficiency of 0.24 lm/W at 100 cd/m^2 was obtained, which indicated that the optimized thickness of CuPc layer was around 15 nm.     

Dielectric,mechanical and thermal properties of novel core–shell CuPc@MWCNTs/PEN composite films

In this work, multiwalled carbon nanotubes (MWCNTs) were successfully enwrapped by a thin layer of tetra-nitrophthalocyanine copper (CuPc) via solvent-thermal method. EDS spectrum shows that the hybrid materials are mainly composed of C, Cu, N and O elements. TEM images exhibit that the MWCNT was wholly coated with a layer of CuPc and micro-nanoscale core–shell CuPc@MWCNTs were formed. FTIR reveals the detailed chemical groups of micro-nanoscale core–shell CuPc@MWCNTs. Thereafter, CuPc@MWCNTs/polyarylene nitrile ethers (PEN) composite films were prepared via solution-casting method. The CuPc@MWCNTs/PEN composite films possess excellent thermal and mechanical properties endowed by PEN matrix. The glass transition temperature of the composite films is about 175 °C and the initial decomposition temperature is in the range of 494–499 °C. Besides, the tensile modulus of the composite films is above 70 MPa. Furthermore, the dielectric constant of the composite film with 5.0 wt% CuPc@MWCNTs loading is 31 at 50 Hz while the dielectric loss is 0.58 at 50 Hz.     

High coercivity in nanostructured Co-ferrite thin films

Three methods including sol-gel, rf sputtering and pulsed laser deposition (PLD) have been used for the fabrication of high coercivity Co-ferrite thin films with a nanocrystalline structure. The PLD method is demonstrated to be a possible tool to achieve Co-ferrite films with high coercivity and small grain size at low deposition temperature. High coercivity, over 10 kOe, has been successfully achieved in Co-ferrite films with a thickness of ∼ 100 nm deposited using PLD with a substrate temperature at 550°C. The Co-ferrite films prepared by PLD at over 300°C on different substrates including amorphous glass, quartz and silicon exhibits an obvious (111) textured structure and possesses perpendicular anisotropy. Our study has also shown that the high coercivity is related with a large residual strain, which may induce an additional magnetic anisotropy (stress anisotropy) and at the same time serve as pinning centres, which can restrict the domain wall movement and therefore, increase the coercivity.     

Magnetic measurements with Lorentz microscopy

The electron microscope may be operated in a mode which permits the exploration of the magnetization configurations in thin magnetic films. This mode of operation, known as Lorentz microscopy, is a powerful technique for investigating thin NiFe films because it offers high resolution, because it provides an unequivocal identification of the local magnetization direction, and because it permits correlations to be made between the magnetic structure and the underlying physical (crystallographic) structure of the film. In the past, Lorentz microscopy has found fruitful employment in the analysis of the magnetization configurations of domain walls, in studies of various magnetization reversal processes, and in specialized investigations of unusual magnetic structure. Besides these primarily qualitative investigations, however, some quantitative measurements may be made with this instrument. Such measurements are useful not only because they permit direct evaluation of basic magnetic parameters of films being studied by Lorentz microscopy, but because they afford insight into the fundamental processes which occur in the standard macroscopic magnetic measurements of NiFe films deposited on glass substrates. The following measurements are discussed: 1) determination of the Curie temperature; 2) measurement of the anisotropy field Hkby the standard hysteresigraph and the Feldtkeller techniques; 3) quantitative studies of wall motion by labyrinth propagation and by wall creep; 4) the investigation of anisotropy dispersion by the Crowther and Torok techniques. The accuracy of these measurements is, in general, lower than that of the analogous measurements made by macroscopic methods on films deposited on glass substrates. Nevertheless, macroscopic measurements performed on a film on a glass substrate showed good agreement with Lorentz measurements performed on a simultaneously-deposited film which was suitable for Lorentz microscopy.     

MBE方法在GaAs(001)衬底上外延生长GaSb膜

利用分子束外延方法(MBE)在GaAs(001)衬底上外延生长了GaSb薄膜,利用高分辨透射电子显微镜(HRTEM)、原子力显微镜(AFM)、Hall效应(HallEffect)和低温光荧光谱(LTPL)等手段对薄膜的晶体质量、电学性能和光学质量进行了研究。发现直接生长的GaSb膜表面平整,空穴迁移率较高。引入GaSb/AlSb超晶格可有效阻断进入GaSb外延层的穿通位错,对应的PL谱强度增强,材料的光学质量变好。     

Tuning the morphology and molecular orientation of copper hexadecafluorophthalocyanine thin films by solvent annealing

We present a detailed investigation of the molecular orientation transition and resulting morphology of copper hexadecafluorophthalocyanine (F₁₆CuPc) thin films induced by solvent annealing. The F₁₆CuPc molecules reorganize from small spherical or fibre-like crystals to large-size ribbon crystals which then dominate the resulting film properties. This reorganization and the formation of the ribbon crystals are closely related to the evaporation of solvent molecules and Ostwald ripening. The resulting thin films demonstrate morphological and structural characteristics with significant potential for application in high-performance organic electronic devices.     

FeNi and Ti underlayers for vertical recording on rigid disks

FeNi and Ti underlayers on CoCr disks are studied. It is confirmed that the structure of FeNi thin films is derived from pure Ni cfc structure. Soft magnetic films can be achieved when sputtering conditions are optimized for an Fe2ONi80 target. Sputtering conditions were also studied for Ti layers. It was found that Ti thin films crystallize in the hcp structure. An (002) crystallographic preferred orientation was generally observed, but it can be improved for thinner films and when high cathode voltage is used during deposition. A (100) orientation is observed if high bias voltage is applied to the substrate during deposition. Both structures, when used as underlayers, improve the vertical anisotropy of CoCr, but (100) Ti underlayers lead to a higher vertical anisotropy     

New domain configuration in thin-film recording heads

Kerr microscopy was used to observe the domain structure of Permalloy films that have the same shape as the pole pieces commonly employed in thin-film recording heads. These pole pieces were deposited on thin glass slides, making it possible to observe the domains from both the top and the bottom of the film. It was found that the domain configuration can be quite different on the two surfaces when strain-induced anisotropy is present     

Nano structure formation in vacuum evaporated zinc phthalocyanine (ZnPc) thin films

In this article we have reported the nano structure formation in ZincPhthalocyanine (ZnPc) thin films coated on glass substrates by thermal evaporation method. The structure of the films was analyzed by an X-ray diffractometer (using Cu K_α radiation with λ = 1.5418 Å). It reveals that the vacuum evaporated ZnPc thin films are having nano particles in its structure. It is confirmed by the scanning electron microscopy (SEM), X-ray diffraction (XRD) and optical absorption studies. The results of the XRD, SEM and AFM studies have been discussed in this article. A metastable α to the stable β-phase transformation has been observed when the films are coated at higher substrate temperatures. The core structure of the ZnPc macrocycle is formed by four isoindole units endowing the molecule with a two-dimensional conjugated π electron system.     

A comparative study of Co thin film deposited on GaAs (1 0 0) and glass substrates

The structural, magnetic and transport properties of Co/GaAs (1 0 0) and Co/glass thin films have been investigated. The structural measurements reveal the crystalline nature of Co thin film grown on GaAs, while microcrystalline nature in case of glass substrate. The film grown on GaAs shows higher coercivity (49.0 G), lower saturation magnetization (3.65 × 10⁻⁴) and resistivity (8 μΩ cm) values as compared to that on glass substrate (22 G, 4.77 × 10⁻⁴ and 18 μΩ cm). The grazing incidence X-ray reflectivity and photoemission spectroscopy results show the interaction between Co and GaAs at the interface, while the Co layer grown on glass remains unaffected. These observed results are discussed and interpreted in terms of different growth morphologies and structures of as grown Co thin film on both substrates.     

瞬时蒸发法制备Bi薄膜的微观结构及电输运性能

用瞬时蒸发法在加热到453K的玻璃基体上沉积出了厚度在40-160nm的多晶Bi纳米薄膜。用X射线衍射(XRD)、场发射扫描电子显微术(FE-SEM)分析了薄膜的相结构和表面形貌。在300-350K研究了薄膜厚度与电阻率的关系,随着薄膜厚度增加,电阻率并不是单调减小;随着温度增加,电阻率减小。温度在300K时,Bi薄膜的电阻率在0.36-0.46mΩ·cm之间变化。随着薄膜厚度的增加,Seebeck系数增加。电子浓度、迁移率与薄膜厚度的关系表明薄膜的电输运性能随薄膜厚度的变化而波动。     

Low-energy electron mean free path in thin films of copper phthalocyanine

The formation of thin organic films of copper phthalocyanine (CuPc) deposited onto the surface of gold-coated quartz crystal resonator was studied in situ under ultrahigh vacuum conditions by means of total electron-beam-induced current spectroscopy in combination with deposit thickness determination by piezocrystal microbalance technique. Variations in the fine structure of the total current spectra of CuPc layers of var-ious thicknesses in the 0–8 nm interval have been analyzed and the electron mean free path in thin CuPc films was determined as a function of the electron energy. For electron energies of 5.0, 7.2, 14.4, and 18.0 eV above the Fermi level, the mean free path is 6.4, 3.9, 2.6, and 2.3 nm.     

氧化物La-Ca-Mn-O巨磁电阻薄膜的制备及其结构特性的研究

采用磁控溅射方法在ＺｒＯ２（００１）、Ｓｉ（００１）和玻璃衬底上成功地制备了ＬａＣａＭｎＯ（以下简称为ＬＣＭＯ）巨磁电阻薄膜。Ｘ－射线分析表明，ＺｒＯ２的晶格常数与ＬＣＭＯ的晶格常数失配虽然较大，仍可得到较好的ＬＣＭＯ薄膜。在Ｓｉ片上难以制备出致密完整的ＬＣＭＯ薄膜，其原因有待查明。玻璃衬底上可以获得纯相的ＬＣＭＯ巨磁电阻薄膜，在ＺｒＯ２衬底上制备的ＬＣＭＯ薄膜，其巨磁电阻效应在１５０Ｋ，３０００Ｇａｕｓ下达１３％左右。     

Reflection/transmission Measurements of Anisotropic Films with One of the Principal Axes in the Direction of Columnar Growth

Abstract

In depositing crystalline thin films, anisotropy may be induced by the texture structure of the film. Generally one of the principal axes of this anisotropy is in the direction of columnar growth, which may be neither normal nor parallel to the film surface. In this paper we have developed a general method for characterizing thin films with this kind of anisotropy. Propagation of plane waves in media with the above mentioned crystalline structure has been studied. The reflectance and transmittance of a plane wave from the films with the structure-induced anisotropy have been calculated. By comparing calculations with measurements, we could determine optical properties and thicknesses of the films with the columnar-structure-induced anisotropy.     

Studies on phase transformations of Cu-phthalocyanine thin films

Copper phthalocyanine (CuPc) thin films were obtained by a sublimation technique on Si wafer substrates maintained at room temperature. As-deposited CuPc films with less than 0.1 m thickness crystallize primarily in the -form with a preferential orientation of the crystallites in the [2 0 0] direction. The effect of randomizing of the orientation of the CuPc crystallites is observed as the film thickness increases, whereas the preference in appearance of the -form remains. The changes in phase composition, structure, morphology and surface chemical composition of as-deposited CuPc thin films due to different heat treatment conditions were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS).     

FePt-Ag nanocomposite thin films with longitudinal magnetic anisotropy

A well-controlled method to fabricate FePt thin films with the (200) texture and longitudinal magnetic anisotropy for high-density magnetic recording media is reported. FePt-Ag nanocomposite thin films with L1(0) ordered FePt grains embedded in an Ag matrix were deposited on the Cr90Ru10/glass by co-sputtering from Ag and FePt targets. The Ag doping suppressed the (001) texture but improved the L1(0) FePt (200) texture. The magnetic easy axis of FePt-Ag thin films changed from perpendicular to longitudinal in direction. In-plane coercivity of the films varied from 0.8 kOe to 6.5 kOe, depending on Ag contents in the films and under-layer thickness. The change from the (001) to (200) texture could be due to the competition of grain-boundary energy and epitaxial-strain energy.     

Improved performance of fluorinated copper phthalocyanine thin film transistors using an organic pn junction: Effect of copper phthalocyanine film thickness

We have investigated the effect of film thickness of copper phthalocyanine (CuPc) on improving fluorinated copper phthalocyanine (F₁₆CuPc) thin film transistor (TFT) performance with an organic pn junction. Electron field-effect mobility is exponentially enhanced up to 2.0 × 10^− 2 cm² V^− 1 s^− 1 with increasing of CuPc film thickness, and then unchanged when the CuPc thickness is over the saturation thickness (3 monolayers). The charge carrier density at the interface of F₁₆CuPc/CuPc decreases the total TFT resistance, which leads to the increase of mobility. Threshold voltage is suppressed with increasing CuPc films. On the other hand, larger current on/off ratio is obtained when islanded CuPc films are formed on the surface of F₁₆CuPc films. Therefore, employing an organic pn junction is an effective and simple method to fabricate high performance of n-channel transistors for practical applications.