Bottom‐Up Single‐Electron Transistors

As the downscaling of conventional semiconductor electronics becomes more and more challenging, the interest in alternative material systems and fabrication methods is growing. A novel bottom‐up approach for the fabrication of high‐quality single‐electron transistors (SETs) that can easily be contacted electrically in a controllable manner is developed. This approach employs the self‐assembly of Au nanoparticles forming the SETs, and Au nanorods forming the leads to macroscopic electrodes, thus bridging the gap between the nano‐ and microscale. Low‐temperature electron‐transport measurements reveal exemplary single‐electron tunneling characteristics. SET behavior can be significantly changed, post‐fabrication, using molecular exchange of the tunnel barriers, demonstrating the tunability of the assemblies. These results form a promising proof of principle for the versatility of bottom‐up nanoelectronics, and toward controlled fabrication of nanoelectronic devices.     

Quasi‐Solid‐State Single‐Atom Transistors

The single‐atom transistor represents a quantum electronic device at room temperature, allowing the switching of an electric current by the controlled and reversible relocation of one single atom within a metallic quantum point contact. So far, the device operates by applying a small voltage to a control electrode or “gate” within the aqueous electrolyte. Here, the operation of the atomic device in the quasi‐solid state is demonstrated. Gelation of pyrogenic silica transforms the electrolyte into the quasi‐solid state, exhibiting the cohesive properties of a solid and the diffusive properties of a liquid, preventing the leakage problem and avoiding the handling of a liquid system. The electrolyte is characterized by cyclic voltammetry, conductivity measurements, and rotation viscometry. Thus, a first demonstration of the single‐atom transistor operating in the quasi‐solid‐state is given. The silver single‐atom and atomic‐scale transistors in the quasi‐solid‐state allow bistable switching between zero and quantized conductance levels, which are integer multiples of the conductance quantum G₀ = 2e²/h. Source–drain currents ranging from 1 to 8 µA are applied in these experiments. Any obvious influence of the gelation of the aqueous electrolyte on the electron transport within the quantum point contact is not observed.     

Micrometer‐ and Nanometer‐Sized Organic Single‐Crystalline Transistors

The use of micrometer and nanometer‐sized organic single crystals to fabricate devices can retain all the advantages of single crystals, avoid the difficulties of growing large crystals, and provide a way to characterize organic semiconductors more efficiently. Moreover, the effective use of such “small” crystals will be beneficial to nanoelectronics. Here we review the recent progress of organic single‐crystalline transistors based on micro‐/nanometer‐sized structures, namely fabrication methods and related technical issues, device properties, and current challenges.     

A Tight‐Binding Study of Single‐Atom Transistors

A detailed theoretical study of the electronic and transport properties of a single atom transistor, where a single phosphorus atom is embedded within a single crystal transistor architecture, is presented. Using a recently reported deterministic single‐atom transistor as a reference, the electronic structure of the device is represented atomistically with a tight‐binding model, and the channel modulation is simulated self‐consistently with a Thomas‐Fermi method. The multi‐scale modeling approach used allows confirmation of the charging energy of the one‐electron donor charge state and explains how the electrostatic environments of the device electrodes affects the donor confinement potential and hence extent in gate voltage of the two‐electron charge state. Importantly, whilst devices are relatively insensitive to dopant ordering in the highly doped leads, a ～1% variation of the charging energy is observed when a dopant is moved just one lattice spacing within the device. The multi‐scale modeling method presented here lays a strong foundation for the understanding of single‐atom device structures: essential for both classical and quantum information processing.     

Nanogap Electrodes towards Solid State Single‐Molecule Transistors

With the establishment of complementary metal‐oxide‐semiconductor (CMOS)‐based integrated circuit technology, it has become more difficult to follow Moore's law to further downscale the size of electronic components. Devices based on various nanostructures were constructed to continue the trend in the minimization of electronics, and molecular devices are among the most promising candidates. Compared with other candidates, molecular devices show unique superiorities, and intensive studies on molecular devices have been carried out both experimentally and theoretically at the present time. Compared to two‐terminal molecular devices, three‐terminal devices, namely single‐molecule transistors, show unique advantages both in fundamental research and application and are considered to be an essential part of integrated circuits based on molecular devices. However, it is very difficult to construct them using the traditional microfabrication techniques directly, thus new fabrication strategies are developed. This review aims to provide an exclusive way of manufacturing solid state gated nanogap electrodes, the foundation of constructing transistors of single or a few molecules. Such single‐molecule transistors have the potential to be used to build integrated circuits.     

High‐Efficiency Single‐Component Organic Light‐Emitting Transistors

Construction of high‐performance organic light‐emitting transistors (OLETs) remains challenging due to the limited desired organic semiconductor materials. Here, two superior high mobility emissive organic semiconductors, 2,6‐diphenylanthracene (DPA) and 2,6‐di(2‐naphthyl) anthracene (dNaAnt), are introduced into the construction of OLETs. By optimizing the device geometry for balanced ambipolar efficient charge transport and using high‐quality DPA and dNaAnt single crystals as active layers, high‐efficiency single‐component OLETs are successfully fabricated, with the demonstration of strong and spatially controlled light emission within both p‐ and n‐ conducting channels and output of high external quantum efficiency (EQE). The obtained EQE values in current devices are approaching 1.61% for DPA‐OLETs and 1.75% for dNaAnt‐based OLETs, respectively, which are the highest EQE values for single‐component OLETs in the common device configuration reported so far. Moreover, high brightnesses of 1210 and 3180 cd m^?2 with current densities up to 1.3 and 8.4 kA cm^?2 are also achieved for DPA‐ and dNaAnt‐based OLETs, respectively. These results demonstrate the great potential applications of high mobility emissive organic semiconductors for next‐generation rapid development of high‐performance single‐component OLETs and their related organic integrated electro‐optical devices.     

Photoelectrical Response in Single‐Layer Graphene Transistors

The illumination of single‐layer graphene (SLG) transistors with visible light causes a negative shift in their transfer curves, attributable to the desorption of oxygen. However, their hysteresis is not affected by illumination, which suggests that charge traps are not affected by the visible‐light exposure. When SLG transistors are covered with a layer of photoactive polymer, the photodesorption‐induced current change in the transistors becomes less significant than the effects caused by the surrounding photoactive polymer. These observations demonstrate that the photoelectrical response of SLG transistors is dominated by extrinsic mechanisms rather than by the direct photocurrent process. The results suggest a new strategy for achieving light detection. The large cross section of SLG films for receiving photons and the capability of tailoring photoelectrical properties on them is potentially useful for optoelectronic applications.     

N‐Doped Graphene Field‐Effect Transistors with Enhanced Electron Mobility and Air‐Stability

Although graphene can be easily p‐doped by various adsorbates, developing stable n‐doped graphene that is very useful for practical device applications is a difficult challenge. We investigated the doping effect of solution‐processed (4‐(1,3‐dimethyl‐2,3‐dihydro‐1H‐benzoimidazol‐2‐yl)phenyl)dimethylamine (N‐DMBI) on chemical‐vapor‐deposited (CVD) graphene. Strong n‐type doping is confirmed by Raman spectroscopy and the electrical transport characteristics of graphene field‐effect transistors. The strong n‐type doping effect shifts the Dirac point to around ‐140 V. Appropriate annealing at a low temperature of 80 ºC enables an enhanced electron mobility of 1150 cm² V^?1 s^?1. The work function and its uniformity on a large scale (1.2 mm × 1.2 mm) of the doped surface are evaluated using ultraviolet photoelectron spectroscopy and Kelvin probe mapping. Stable electrical properties are observed in a device aged in air for more than one month.