Bottom‐Up Single‐Electron Transistors

As the downscaling of conventional semiconductor electronics becomes more and more challenging, the interest in alternative material systems and fabrication methods is growing. A novel bottom‐up approach for the fabrication of high‐quality single‐electron transistors (SETs) that can easily be contacted electrically in a controllable manner is developed. This approach employs the self‐assembly of Au nanoparticles forming the SETs, and Au nanorods forming the leads to macroscopic electrodes, thus bridging the gap between the nano‐ and microscale. Low‐temperature electron‐transport measurements reveal exemplary single‐electron tunneling characteristics. SET behavior can be significantly changed, post‐fabrication, using molecular exchange of the tunnel barriers, demonstrating the tunability of the assemblies. These results form a promising proof of principle for the versatility of bottom‐up nanoelectronics, and toward controlled fabrication of nanoelectronic devices.     

A Single‐Electron Transistor Made of a 3D Topological Insulator Nanoplate

Quantum confined devices of 3D topological insulators are proposed to be promising and of great importance for studies of confined topological states and for applications in low‐energy‐dissipative spintronics and quantum information processing. The absence of energy gap on the topological insulator surface limits the experimental realization of a quantum confined system in 3D topological insulators. Here, the successful realization of single‐electron transistor devices in Bi₂Te₃ nanoplates using state‐of‐the‐art nanofabrication techniques is reported. Each device consists of a confined central island, two narrow constrictions that connect the central island to the source and drain, and surrounding gates. Low‐temperature transport measurements demonstrate that the two narrow constrictions function as tunneling junctions and the device shows well‐defined Coulomb current oscillations and Coulomb‐diamond‐shaped charge‐stability diagrams. This work provides a controllable and reproducible way to form quantum confined systems in 3D topological insulators, which should greatly stimulate research toward confined topological states, low‐energy‐dissipative devices, and quantum information processing.     

A Tight‐Binding Study of Single‐Atom Transistors

A detailed theoretical study of the electronic and transport properties of a single atom transistor, where a single phosphorus atom is embedded within a single crystal transistor architecture, is presented. Using a recently reported deterministic single‐atom transistor as a reference, the electronic structure of the device is represented atomistically with a tight‐binding model, and the channel modulation is simulated self‐consistently with a Thomas‐Fermi method. The multi‐scale modeling approach used allows confirmation of the charging energy of the one‐electron donor charge state and explains how the electrostatic environments of the device electrodes affects the donor confinement potential and hence extent in gate voltage of the two‐electron charge state. Importantly, whilst devices are relatively insensitive to dopant ordering in the highly doped leads, a ～1% variation of the charging energy is observed when a dopant is moved just one lattice spacing within the device. The multi‐scale modeling method presented here lays a strong foundation for the understanding of single‐atom device structures: essential for both classical and quantum information processing.     

Cover Picture: High‐Performance Organic Single‐Crystal Transistors on Flexible Substrates (Adv. Mater. 17/2006)

The cover shows a comparison of thin and thick rubrene single crystals where the flexibility of the thin rubrene crystals is clearly illustrated. On p. 2320, Yang, Bao, and co‐workers report that high performance flexible transistors on plastic substrates fabricated by using these rubrene “thin‐film” single‐crystals demonstrate mobility as high as 4.6 cm² Vs^–1 and ON/OFF ratios of approximately 10⁶.