共查询到20条相似文献,搜索用时 15 毫秒
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Rama K. Vasudevan M. Baris Okatan Chen Duan Yoshitaka Ehara Hiroshi Funakubo Amit Kumar Stephen Jesse Long‐Qing Chen Sergei V. Kalinin Valanoor Nagarajan 《Advanced functional materials》2013,23(1):81-90
The nonlinear response of a ferroic to an applied field has been studied through the phenomenological Rayleigh Law for over a hundred years. Yet, despite this, the fundamental physical mechanisms at the nanoscale that lead to macroscopic Rayleigh behavior have remained largely elusive, and experimental evidence at small length scales is limited. Here, it is shown using a combination of scanning probe techniques and phase field modeling, that nanoscale piezoelectric response in prototypical Pb(Zr,Ti)O3 films appears to follow a distinctly non‐Rayleigh regime. Through statistical analysis, it is found that an averaging of local responses can lead directly to Rayleigh‐like behavior of the strain on a macroscale. Phase‐field modeling confirms the twist of the ferroelastic interface is key in enhancing piezoelectric response. The studies shed light on the nanoscale origins of nonlinear behavior in disordered ferroics. 相似文献
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采用溶胶-凝胶法(Sol-Gel)在Pt/Si衬底上制备了PbTiO3 (PT)薄膜和Pb (Zrx,Ti1-x)O3(PZT)薄膜,研究了退火温度以及PT种子层对PZT薄膜结晶及压电性能的影响。X射线衍射(XRD)结果表明,制备的PZT薄膜为纯钙钛矿结构的多晶薄膜,有PT种子层的PZT薄膜晶粒尺寸更大,(110)面取向度更高,结晶性能更好;原子力显微镜(AFM)结果表明,制备的薄膜表面形貌比较平整、均匀、无裂纹;压电力显微镜(PFM)结果表明,压电力显微镜(PFM)结果表明,有PT种子层时,PZT薄膜的平均压电系数d33为128~237 pm/V,无PT种子层时平均压电系数d33为21~29 pm/V。在升温速率为10 ℃/s的退火条件下保温10 min时,随着退火温度的升高,PZT薄膜晶粒尺寸增大,粗糙度增大,(110)面取向度升高,平均压电系数d33增大。PT种子层能够有效的改善PZT薄膜的结晶性能和压电性能。 相似文献
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采用中频(MF,40 kHz)双S枪磁控反应溅射制备出了氮化铝(AlN)压电薄膜;采用直流磁控溅射法制作了Mo电极薄膜;采用脉冲DC磁控溅射Au、Cr、Al靶分别制作Au/Cr底电极薄膜及Al/Cr顶电极薄膜。通过对AlN压电薄膜、Mo及Au电极薄膜进行了X线衍射(XRD)分析,结果表明,复合AlN压电薄膜(002)面、Mo薄膜(110)面及Au薄膜(111)面择优取向优良,说明选用Al/Cr/AlN/Au/Cr/YAG复合结构压电薄膜能研制出Ku波段及K波段声体波微波延迟线(BAWDL),其Ku及K波段BAWDL器件插入损耗分别低至43.7 dB、54.6 dB。 相似文献
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激光热冲击引起PZT压电薄膜铁电性能的变化 总被引:4,自引:2,他引:2
应用高能量单脉冲激光作用在锆钛酸铅 (PZT)压电薄膜上 ,研究脉冲激光的热冲击对PZT薄膜性能产生的影响。发现在激光未烧熔薄膜的能量密度下 ,经过激光作用后 ,PZT薄膜的铁电性能发生变化 :在外加电压为 6V时 ,剩余极化强度值Pr 从 32 6 99μC/cm2 变到 2 6 316 μC/cm2 ;矫顽电场保持为 38 396kV/cm不变 ;疲劳性能变稳定 ,在循环 1 75× 10 9次时 Pr 衰变率由 4 4 3%变为 34 7%。最后讨论分析了产生这种现象的微观机理。 相似文献
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采用传统固相法制备(Na0.82K0.18)0.5Bi0.5TiO3无铅压电陶瓷粉体,将质量分数5%的乙基纤维素溶入到质量分数为92%的松油醇中配制粘合剂溶液,加入质量分数2%的二乙二醇丁醚醋酸酯作分散剂,质量分数1%的邻苯二甲酸二丁酯作增塑剂,将陶瓷粉体与粘合剂溶液按3:1的质量比混合碾磨,用320目筛印刷至带有Pt电极的氧化铝衬底上,经放平、烘烤、预烧、加压及烧结后,制备出厚度约40 μm的BNKT厚膜,平均晶粒尺寸为1.1 μm,介电常数也达到最大为782,损耗最小为3.6%(10 kHz),剩余极化为24.8 μC/cm2矫顽场为71.6 kV/cm,纵向压电系数为79 pC/N. 相似文献
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HUANG Yan-wei YAO Ning ZHANG bing-lin 《半导体光子学与技术》2007,13(3):210-214
Thin films of ZnO were electrodeposited from an aqueous solution of Zn(NO3 )2 on indium tin oxide(ITO)-covered glass substrate. The analysis of X-ray diffraction(XRD) and scanning electron micrograph (SEM) indicated that the obtained ZnO films had a compact hexagonal wurtzite type structure with preferable (002) growth direction. A sharp near-UV emission peak located at 380 nm and a strong orange-red emission peak located at 593 nm were observed in the photoluminescence, when excited with 325 nm wavelength at room temperature. Then the prepared ZnO films were introduced as anode phosphors into the field emission test. It was found that orange-red cathode-luminescence was observed and the luminescent brightness was enhanced by annealing. When annealing temperature increased about 600 ℃, the photoluminescence with peak of 531 nm and the green cathode-luminescence were observed. The tests showed that the brightness of about 2 × 102 cd/m^2 was obtained at electric field of 2 V/μm for annealed sample. The results revealed that the film could be a good kind of low-voltage drived cathode-luminescence phosphor. 相似文献
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基于压电效应的能量回收接口电路是能量回收系统的重要组成部分,经典的接口电路有标准接口、同步电荷提取电路(SECE)、并联同步开关电感电路(Parallel-SSHI)、串联同步开关电感电路(Series-SSHI)4种。提出并设计了一种新的接口电路——同步电荷提取和翻转电路(SCEI)接口电路,完成了该接口电路在恒定激振位移情况下回收功率的理论分析和计算,并利用电子仿真软件Multisim对SCEI和4种典型接口电路的回收功率进行了仿真和比较。结果表明,SCEI接口电路性能优越,其回收功率约是SECE电路的1.5倍,且与负载无关。 相似文献
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压电材料作为环境振动能量收集器的核心功能材料,是制备高性能能量收集器的关键。该文从提高能量收集效率入手,研究适合于能量转换的高性能压电陶瓷材料。采用两步合成工艺制备出了0.7Pb(Zr0.51Ti0.49)0.99O3-0.3Pb(Zn1/3Nb2/3)O3(PZT-PZN)压电陶瓷,研究了La2O3掺杂对其微观结构和机电性能的影响。实验结果表明,掺杂少量的La2O3能显著提高PZT-PZN陶瓷的压电系数(d33)、机电耦合系数(k31、kp)、介电常数(εr)等。当掺杂量为4%(摩尔分数)时,在1 200℃烧结PZT-PZN,显示出良好的压电和介电性能:d33=560pC/N,k31=0.376,kp=0.642,s1E1=16.5×10-12 m2/N,εr=3 125。 相似文献
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Efficient Piezoelectric Energy Harvesters Utilizing (001) Textured Bimorph PZT Films on Flexible Metal Foils 下载免费PDF全文
Hong Goo Yeo Xiaokun Ma Christopher Rahn Susan Trolier‐McKinstry 《Advanced functional materials》2016,26(32):5940-5946
Extracting energy from low vibration frequencies (<10 Hz) using piezoelectric energy harvester promises continuous self‐powering for sensors and wearables. The piezoelectric compliant mechanism (PCM) design provides a significantly higher efficiency by fostering a uniform strain for its 1st mode shape, and so is interesting for this application. In this paper, a PCM energy harvester with bimorph Pb(Zr,Ti)O3 (PZT) films on Ni foil deposited by rf magnetron sputtering is shown to have high efficiency and large power for low frequency mechanical vibration. In particular, {001} textured PZT films are deposited on both sides of polished Ni foils with (100) oriented LaNiO3 seed layers on HfO2 buffer layers. The performance of PCM with an active area of 5.2 cm2 is explored for various excitation accelerations (0.02–0.16 g [g = 9.8 m s?2]) around 6 Hz. The PCM device provides a power level of 3.9 mW cm?2 g2 and 65% mode shape efficiencies. 相似文献
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Declamped Piezoelectric Coefficients in Patterned 70/30 Lead Magnesium Niobate–Lead Titanate Thin Films 下载免费PDF全文
Ryan Keech Linghan Ye James L. Bosse Giovanni Esteves Jonathon Guerrier Jacob L. Jones Marcelo A. Kuroda Bryan D. Huey Susan Trolier‐McKinstry 《Advanced functional materials》2017,27(9)
Lateral subdivision of blanket piezoelectric thin films increases the functional properties through both increased domain wall mobility and declamping of the intrinsic response. This work presents the local effects of substrate declamping on the piezoelectric coefficient d 33,f of 300 nm thick, rhombohedral, {001}‐oriented lead magnesium niobate–lead titanate thin films at the 70/30 composition (70PMN–30PT). Films grown by chemical solution deposition on platinized Si substrates are patterned into strip structures ranging from 0.75 to 9 µm in width. The longitudinal piezoelectric coefficient, d 33,f, is interrogated as a function of position across the patterned structures by three approaches: finite element modeling, piezoresponse force microscopy, and nanoprobe synchrotron X‐ray diffraction. It is found that d 33,f increases from the clamped value of 40–50 to ≈160 pm V?1 at the free sidewall under 200 kV cm?1 excitation. The sidewalls partially declamp the piezoelectric response 500–600 nm into the patterned structure, raising the piezoelectric response at the center of features with lateral dimensions less than 1 µm (3:1 width to thickness aspect ratio). The normalized data from all three methods are in excellent agreement, with quantitative differences providing insight to the field dependence of the piezoelectric coefficient and its declamping behavior. 相似文献