Beryllium‐Assisted p‐Type Doping for ZnO Homojunction Light‐Emitting Devices

A key step in realization of a ZnO homojunction light‐emitting diode is the effective p‐type doping in ZnO:N. In this article, a feasible route is demonstrated to enhance hole doping in ZnO:N films by the assistance of Beryllium. The newly synthesized p‐type ZnO is applied in light‐emitting devices. The corresponding p–i–n junction exhibits excellent diode characteristics, and strong near band edge ultraviolet emissions is also observed even at temperatures as high as 400 K under the injection of continuous current. The results represent a critical advance toward the development of high‐efficiency and stabilized p‐type ZnO, which is also a desirable key step for future ZnO‐based optoelectronic applications.     

Organic–Inorganic Perovskite Light‐Emitting Electrochemical Cells with a Large Capacitance

While perovskite light‐emitting diodes typically made with high work function anodes and low work function cathodes have recently gained intense interests. Perovskite light‐emitting devices with two high work function electrodes with interesting features are demonstrated here. Firstly, electroluminescence can be easily obtained from both forward and reverse biases. Secondly, the results of impedance spectroscopy indicate that the ionic conductivity in the iodide perovskite (CH₃NH₃PbI₃) is large with a value of ≈10^?8 S cm^?1. Thirdly, the shift of the emission spectrum in the mixed halide perovskite (CH₃NH₃PbI_3?xBr_x) light‐emitting devices indicates that I^? ions are mobile in the perovskites. Fourthly, this work shows that the accumulated ions at the interfaces result in a large capacitance (≈100 μF cm^?2). The above results conclusively prove that the organic–inorganic halide perovskites are solid electrolytes with mixed ionic and electronic conductivity and the light‐emitting device is a light‐emitting electrochemical cell. The work also suggests that the organic–inorganic halide perovskites are potential energy‐storage materials, which may be applicable in the field of solid‐state supercapacitors and batteries.     

High Performance p‐ and n‐Type Light‐Emitting Field‐Effect Transistors Employing Thermally Activated Delayed Fluorescence

Light‐emitting field‐effect transistors (LEFETs) are an emerging type of devices that combine light‐emitting properties with logical switching function. One of the factors limiting their efficiency stems from the spin statistics of electrically generated excitons. Only 25% of them, short lived singlet states, are capable of light emission, with the other 75% being long lived triplet states that are wasted as heat due to spin‐forbidden processes. Traditionally, the way to overcome this limitation is to use phosphorescent materials as additional emission channel harnessing the triplet excitons. Here, an alternative strategy for triplet usage in LEFETs in the form of thermally activated delayed fluorescence (TADF) is presented. Devices employing a TADF capable material, 4CzIPN (2,4,5,6‐tetra[9H‐carbazol‐9‐yl]isophthalonitrile), in both n‐type and p‐type configurations are shown. They manifest excellent electrical characteristics, consistent brightness in the range of 100–1,000 cd m^‐2 and external quantum efficiency (EQE) of up to 0.1%, which is comparable to the equivalent organic light‐emitting diode (OLED) based on the same materials. Simulation identifies the poor light out‐coupling as the main reason for lower than expected EQEs. Transmission measurements show it can be partially alleviated using a more transparent top contact, however more structural optimization is needed to tap the full potential of the device.     

Efficiency Roll‐Off in Blue Emitting Phosphorescent Organic Light Emitting Diodes with Carbazole Host Materials

The efficiency roll‐off in blue phosphorescent organic light emitting diodes (OLEDs) using different carbazole compounds as the host is systematically studied. While there is no significant difference in device efficiency, OLEDs using ter‐carbazole as the host show a reduction in efficiency roll‐off at high luminance. Data from transient photoluminescence and electroluminescence measurements show that the lower triplet–triplet annihilation (TTA) and triplet–polaron quenching (TPQ) rates in devices with the ter‐carbazole host compared with other carbazole hosts are the reasons for this reduced efficiency roll‐off. It is also found that the host materials with low glass transition temperatures are more susceptible to the efficiency roll‐off problem.     

Solution‐Processed Zinc Oxide as High‐Performance Air‐Stable Electron Injector in Organic Ambipolar Light‐Emitting Field‐Effect Transistors

Electron injection from the source–drain electrodes limits the performance of many n‐type organic field‐effect transistors (OFETs), particularly those based on organic semiconductors with electron affinities less than 3.5 eV. Here, it is shown that modification of gold source–drain electrodes with an overlying solution‐deposited, patterned layer of an n‐type metal oxide such as zinc oxide (ZnO) provides an efficient electron‐injecting contact, which avoids the use of unstable low‐work‐function metals and is compatible with high‐resolution patterning techniques such as photolithography. Ambipolar light‐emitting field‐effect transistors (LEFETs) based on green‐light‐emitting poly(9,9‐dioctylfluorene‐alt‐benzothiadiazole) (F8BT) and blue‐light‐emitting poly(9,9‐dioctylfluorene) (F8) with electron‐injecting gold/ZnO and hole‐injecting gold electrodes show significantly lower electron threshold voltages and several orders of magnitude higher ambipolar currents, and hence light emission intensities, than devices with bare gold electrodes. Moreover, different solution‐deposited metal oxide injection layers are compared. By spin‐coating ZnO from a low‐temperature precursor, processing temperatures could be reduced to 150 °C. Ultraviolet photoemission spectroscopy (UPS) shows that the improvement in transistor performance is due to reduction of the electron injection barrier at the interface between the organic semiconductor and ZnO/Au compared to bare gold electrodes.     

Bisanthracene‐Based Donor–Acceptor‐type Light‐Emitting Dopants: Highly Efficient Deep‐Blue Emission in Organic Light‐Emitting Devices

Deep‐blue fluorescent compounds are particularly important in organic light‐emitting devices (OLEDs). A donor–accepotor (DA)‐type blue‐emitting compound, 1‐(10‐(4‐methoxyphenyl)anthracen‐9‐yl)‐4‐(10‐(4‐cyanophenyl)anthracen‐9‐yl)benzene ( BD3 ), is synthesized, and for comparison, a nonDA‐type compound, 1,4‐bis(10‐phenylanthracene‐9‐yl)benzene ( BD1 ) and a weak DA‐type compound, 1‐(10‐phenylanthracen‐9‐yl)‐4‐(10‐(4‐cyanophenyl)anthracen‐9‐yl)‐benzene ( BD2 ), are also synthesized. The twisted conformations of the two anthracene units in the compounds, confirmed by single crystal X‐ray analysis, effectively prevent π‐conjugation, and the compound shows deep‐blue photoluminescence (PL) with a high PL quantum efficiency, almost independent of the solvent polarity, resulting from the absence of an intramolecular charge transfer state. The DA‐type molecule BD3 in a non‐doped device exhibits a maximum external quantum efficiency (EQE) of 4.2% with a slight roll‐off, indicating good charge balance due to the DA‐type molecular design. In the doped device with 4,4′‐bis(N‐carbazolyl)‐1,1′‐biphenyl (CBP) host, the BD3 exhibits higher EQE than 10% with Commission International de L'Eclairge (CIE) coordinates of (0.15, 0.06) and a narrow full‐width at half‐maximum of 45 nm, which is close to the CIE of the high definition television standard blue.     

Fluorene‐Based Copolymers for Red‐Light‐Emitting Diodes

The syntheses of new fluorene‐based π‐conjugated copolymers; namely, poly((5,5″‐(3′,4′‐dihexyl‐2,2′;5′,2″‐terthiophene 1′,1′‐dioxide))‐alt‐2,7‐(9,9‐dihexylfluorene)) (PFTORT), poly((5,5″″‐(3″,4″‐dihexyl‐2,2′:5′,2′:5″,2‴:5‴,2″″‐quinquethiophene 1″,1″‐dioxide))‐alt‐2,7‐(9,9‐dihexylfluorene)) (PFTTORTT), and poly((5,5‐E‐α‐(2‐thienyl)methylene)‐2‐thiopheneacetonitrile)‐alt‐2,7‐(9,9‐dihexylfluorene)) (PFTCNVT), are reported. In the solid state, PFTORT and PFTCNVT present red–orange emission (with a maximum at 610 nm) while PFTTORTT shows a red emission with a maximum at 666 nm. In all cases, electrochemical measurements have revealed p‐ and n‐dopable copolymers. All these copolymers have been successfully tested in simple light‐emitting diodes and show promising results for orange‐ and red‐light‐emitting devices.     

Very High Efficiency Orange‐Red Light‐Emitting Devices with Low Roll‐Off at High Luminance Based on an Ideal Host–Guest System Consisting of Two Novel Phosphorescent Iridium Complexes with Bipolar Transport

Two phosphorescent iridium complexes with bipolar transporting ability, namely FPPCA (500 nm) and BZQPG (600 nm), are synthesized and employed as an ideal host‐guest system for phosphorescent organic light emitting diodes (PHOLEDs).The devices give very high‐efficiency orange‐red emission from BZQPG with maximum external quantum efficiency (EQE or η_ext) of >27% and maximum power efficiency (PE or η_p) of >75 lm/W, and maintain high levels of 26% and 55 lm/W, 25% and 40 lm/W at high luminance of 1000 and 5000 cd m^?2, respectively, within a range of 8–15 wt% of BZQPG. The realization of such high and stable EL performance results from the coexistence of two parallel paths: i) effective energy transfer from host (FPPCA) to guest (BZQPG) and ii) direct exciton formation on the BZQPG emitter, which can alternately dominate the electrophosphorescent emission. This all‐phosphor doping system removes the charge‐injection barrier from the charge‐transport process to the emissive layer (EML) due to the inherent narrow E_g of both phosphors. Therefore, this ideal host–guest system represents a new design to produce PHOLEDs with high efficiency and low efficiency roll‐off using a simple device configuration.     

Highly Efficient Non‐Doped Blue Organic Light‐Emitting Diodes Based on Fluorene Derivatives with High Thermal Stability

A new series of blue‐light‐emitting fluorene derivatives have been synthesized and characterized. The fluorene derivatives have high fluorescence yields, good thermal stability, and high glass‐transition temperatures in the range 145–193 °C. Organic light‐emitting diodes (OLEDs) fabricated using the fluorene derivatives as the host emitter show high efficiency (up to 5.3 cd A^–1 and 3.0 lm W^–1) and bright blue‐light emission (Commission Internationale de L'Eclairage (CIE) coordinates of x = 0.16, y = 0.22). The performance of the non‐doped fluorene‐based devices is among the best fluorescent blue‐light‐emitting OLEDs. The good performance of the present blue OLEDs is considered to derive from: 1) appropriate energy levels of the fluorene derivatives for good carrier injection; 2) good carrier‐transporting properties; and 3) high fluorescence efficiency of the fluorene derivatives. These merits are discussed in terms of the molecular structures.     

Binaphthyl‐Containing Green‐ and Red‐Emitting Molecules for Solution‐Processable Organic Light‐Emitting Diodes

Strong intermolecular interactions usually result in decreases in solubility and fluorescence efficiency of organic molecules. Therefore, amorphous materials are highly pursued when designing solution‐processable, electroluminescent organic molecules. In this paper, a non‐planar binaphthyl moiety is presented as a way of reducing intermolecular interactions and four binaphthyl‐containing molecules ( BNCM s): green‐emitting BBB and TBT as well as red‐emitting BTBTB and TBBBT , are designed and synthesized. The photophysical and electrochemical properties of the molecules are systematically investigated and it is found that TBT , TBBBT , and BTBTB solutions show high photoluminescence (PL) quantum efficiencies of 0.41, 0.54, and 0.48, respectively. Based on the good solubility and amorphous film‐forming ability of the synthesized BNCM s, double‐layer structured organic light‐emitting diodes (OLEDs) with BNCM s as emitting layer and poly(N‐vinylcarbazole) (PVK) or a blend of poly[N,N′‐bis(4‐butylphenyl)‐N,N′‐bis(phenyl)benzidine] and PVK as hole‐transporting layer are fabricated by a simple solution spin‐coating procedure. Amongst those, the BTBTB based OLED, for example, reaches a high maximum luminance of 8315 cd · m⁻² and a maximum luminous efficiency of 1.95 cd · A⁻¹ at a low turn‐on voltage of 2.2 V. This is one of the best performances of a spin‐coated OLED reported so far. In addition, by doping the green and red BNCM s into a blue‐emitting host material poly(9,9‐dioctylfluorene‐2,7‐diyl) high performance white light‐emitting diodes with pure white light emission and a maximum luminance of 4000 cd · m⁻² are realized.     

Doping‐Induced Charge Trapping in Organic Light‐Emitting Devices

By using pyran‐containing donor–acceptor dyes as doping molecules in organic light‐emitting devices (OLEDs), we scrutinize the effects of charge trapping and polarization induced by the guest molecules in the electro‐active host material. Laser dyes 4‐(dicyanomethylene)‐2‐methyl‐6‐[2‐(julolidin‐9‐yl)phenyl]ethenyl]‐4H‐pyran (DCM2) and the novel 4‐(dicyanomethylene)‐2‐methyl‐6‐{2‐[(4‐diphenylamino)phenyl]ethenyl}‐4H‐pyran (DCM‐TPA) are used as model compounds. The emission color of these polar dyes depends strongly on doping concentration, which we have attributed to polarization effects induced by the doping molecules themselves. Their frontier orbital energy levels are situated within the bandgap of the tris(8‐hydroxyquinoline)aluminum (Alq₃) host matrix and allow the investigation of either electron trapping or both electron and hole trapping. In the case of DCM‐TPA doping, we were able to show that electron trapping leads to a partial shift of the recombination zone out of the doped Alq₃ region. To impede charge‐recombination processes taking place in the undoped host matrix, a charge‐blocking layer efficiently confines the recombination zone inside the doped zone and gives rise to increased luminous efficiency. For a doping concentration of 1 wt.‐% we obtain a maximum luminous efficiency of 10.4 cd A^–1. At this doping concentration, the yellow emission spectrum shows excellent color saturation with CIE chromaticity coordinates x, y of 0.49 and 0.50, respectively. In the case of DCM2 the recombination zone is much less affected for the same doping concentrations, which is ascribed to the fact that both electrons and holes are being trapped. The experimental findings are corroborated with a numerical simulation of the doped multilayer devices.     

Fundamentals of Materials Selection for Light‐Emitting Electrochemical Cells

The in situ formation of a light‐emitting p–n or p–i–n junction in light‐emitting electrochemical cells (LECs) necessitates mixed ionic–electronic conductors in the active layer. This unique characteristic requires electronic, luminescent, and ionic ingredients that work synergistically in the LECs. The material requirements that lead to promising electroluminescent properties are discussed and the important components reported so far are surveyed. Particular attention is paid to the working mechanisms behind junction formation and stabilization to create efficient and stable electroluminescence in conjugated‐polymer‐based LECs. Keeping these fundamentals in mind explains how LEC devices have evolved from classic conjugated polymer blends into highly stable crosslinked, hybrid composite, and stretchable device architectures. To conclude, a future development strategy is proposed based on a dual approach: develop new materials specifically for LEC devices and explore novel ways to efficiently process and stabilize the p–i–n junction, which will drive improvements in both LEC external quantum efficiency and operating lifetime toward truly low‐cost solid‐state lighting applications.     

Cover Picture: An Organic Light‐Emitting Diode with Field‐Effect Electron Transport (Adv. Funct. Mater. 1/2008)

The cover shows an organic light‐emitting diode with remote metallic cathode, reported by Sarah Schols and co‐workers on p. 136. The metallic cathode is displaced from the light‐emission zone by one to several micrometers. The injected electrons accumulate at an organic heterojunction and are transported to the light‐emission zone by field‐effect. The achieved charge‐carrier mobility and in combination with reduced optical absorption losses because of the remoteness of the cathode may lead to applications as waveguide OLEDs and possibly a laser structure. (The result was obtained in the EU‐funded project “OLAS” IST‐ FP6‐015034.) We describe an organic light‐emitting diode (OLED) using field‐effect to transport electrons. The device is a hybrid between a diode and a field‐effect transistor. Compared to conventional OLEDs, the metallic cathode is displaced by one to several micrometers from the light‐emitting zone. This micrometer‐sized distance can be bridged by electrons with enhanced field‐effect mobility. The device is fabricated using poly(triarylamine) (PTAA) as the hole‐transport material, tris(8‐hydroxyquinoline) aluminum (Alq₃) doped with 4‐(dicyanomethylene)‐2‐methyl‐6‐(julolindin‐4‐yl‐vinyl)‐4H‐pyran (DCM₂) as the active light‐emitting layer, and N,N′‐ditridecylperylene‐3,4,9,10‐tetracarboxylic diimide (PTCDI‐C₁₃H₂₇), as the electron‐transport material. The obtained external quantum efficiencies are as high as for conventional OLEDs comprising the same materials. The quantum efficiencies of the new devices are remarkably independent of the current, up to current densities of more than 10 A cm^–2. In addition, the absence of a metallic cathode covering the light‐emission zone permits top‐emission and could reduce optical absorption losses in waveguide structures. These properties may be useful in the future for the fabrication of solid‐state high‐brightness organic light sources.     

Facile Synthesis of Highly Efficient Lepidine‐Based Phosphorescent Iridium(III) Complexes for Yellow and White Organic Light‐Emitting Diodes

Highly efficient lepidine‐based phosphorescent iridium(III) complexes with pentane‐2,4‐dione or triazolpyridine as ancillary ligands have been designed and prepared by a newly developed facile synthetic route. Fluorine atoms and trifluoromethyl groups have been introduced into the different positions of ligand, and their influence on the photophysical properties of complexes has been investigated in detail. All the triazolpyridine‐based complexes display the blueshifted dual‐peak emission compared to the pentane‐2,4‐dione‐based ones with a broad single‐peak emission. The complexes show emission with broad full width at half maximum (FWHM) over 100 nm, and the emissions are ranges from greenish–yellow to orange region with the absolute quantum efficiency (Φ_PL) of 0.21–0.92 in solution, i.e., Φ_PL = 0.92 ( 18 ), which is the highest value among the reported neutral yellow iridium(III) complexes. Furthermore, high‐performance yellow and complementary‐color‐based white organic light‐emitting diodes (OLEDs) have been fabricated. The FWHMs of the yellow, greenish–yellow OLEDs are in the range of 94–102 nm, which are among the highest values of the reported yellow or greenish–yellow‐emitting devices without excimer emission. The maximum external quantum efficiency of monochrome OLEDs can reach 24.1%, which is also the highest value among the reported yellow or greenish–yellow devices. The color rendering indexes of blue and complementary yellow‐based white OLED is as high as 78.     

Polymer Light‐Emitting Electrochemical Cells: Doping Concentration,Emission‐Zone Position,and Turn‐On Time

Direct optical probing of the doping progression and simultaneous recording of the current–time behavior allows the establishment of the position of the light‐emitting p–n junction, the doping concentrations in the p‐ and n‐type regions, and the turn‐on time for a number of planar light‐emitting electrochemical cells (LECs) with a 1 mm interelectrode gap. The position of the p–n junction in such LECs with Au electrodes contacting an active material mixture of poly(2‐methoxy‐5‐(2′‐ethylhexyloxy)‐p‐phenylene vinylene) (MEH‐PPV), poly(ethylene oxide), and a XCF₃SO₃ salt (X = Li, K, Rb) is dependent on the salt selection: for X = Li the p–n junction is positioned very close to the negative electrode, while for X = K, Rb it is significantly more centered in the interelectrode gap. Its is demonstrated that this results from that the p‐type doping concentration is independent of salt selection at ca. 2 × 10²⁰ cm^–3 (ca. 0.1 dopants/MEH‐PPV repeat unit), while the n‐type doping concentration exhibits a strong dependence: for X = K it is ca. 5 × 10²⁰ cm^–3 (ca. 0.2 dopants/repeat unit), for X = Rb it is ca. 9 × 10²⁰ cm^–3 (ca. 0.4 dopants/repeat unit), and for X = Li it is ca. 3 × 10²¹ cm^–3 (ca. 1 dopants/repeat unit). Finally, it is shown that X = K, Rb devices exhibit significantly faster turn‐on times than X = Li devices, which is a consequence of a higher ionic conductivity in the former devices.     

High‐Tg Carbazole Derivatives as Blue‐Emitting Hole‐Transporting Materials for Electroluminescent Devices

A series of dicarbazolyl derivatives bridged by various aromatic spacers and decorated with peripheral diarylamines were synthesized using Ullmann and Pd‐catalyzed C–N coupling procedures. These derivatives emit blue light in solution. In general, they possess high glass‐transition temperatures (T_g > 125 °C) which vary with the bridging segment and methyl substitution on the peripheral amine. Double‐layer organic light‐emitting devices were successfully fabricated using these molecules as hole‐transporting and emitting materials. Devices of the configuration ITO/HTL/TPBI/Mg:Ag (ITO: indium tin oxide; HTL: hole‐transporting layer; TPBI: 1,3,5‐tris(N‐phenylbenzimidazol‐2‐yl)benzene) display blue emission from the HTL layer. The EL spectra of these devices appear slightly distorted due to the exciplex formation at the interfaces. However, for the devices of the configuration ITO/HTL/Alq₃/Mg:Ag (Alq₃ = tris(8‐hydroxyquinoline)aluminum) a bright green light from the Alq₃ layer was observed. This clearly demonstrates the facile hole‐transporting property of the materials described here.     

Light‐Emitting Field‐Effect Transistors Consisting of Bilayer‐Crystal Organic Semiconductors

A novel device structure for organic light‐emitting field‐effect transistors has been developed. The devices comprise bilayer‐crystal organic semiconductors of a p‐type and an n‐type. The pn‐junction can readily be formed by successively laminating two crystals on top of a gate insulator. This structure enables the efficient injection and transport of electrons and holes, leading to their effective recombination. As a result, bright emissions are attained. The devices are operated by AC gate voltages. Gate‐voltage phase‐resolved drain‐current and emission‐intensity measurements enable us to study the relationship between the emissions and carrier transport. The maximum external quantum efficiency reaches 0.045%.     

Polymer Light‐Emitting Electrochemical Cells with Bipolar Electrode‐Dynamic Doping and Wireless Electroluminescence

This progress report reviews the background and recent developments of polymer light‐emitting electrochemical cells (PLECs). The PLECs of interest have a planar configuration and contain bipolar electrodes (BPEs). A BPE is an electrically floating conductor immersed in an electrochemical cell that contains redox species. When the electrochemical cell is polarized with an externally applied voltage bias, coupled redox reactions are induced wirelessly at the extremities of the BPEs due to the development of a sufficient interfacial potential difference. BPEs can have a dramatic effect on the doping pattern and the emission profiles of PLECs. In a bulk homojunction PLEC containing a large number of dispersed micro‐BPEs, the turn‐on response and light output are greatly enhanced when multiple light‐emitting p–n junctions form throughout the active layer. PLECs offer a solid‐state platform on which the bipolar electrochemistry phenomena can be investigated, and the understanding of the complex PLEC processes can be improved. This progress report highlights several new BPE types as well as their potential applications for device performance enhancement and for the visualized screening of functional materials.     

High‐Efficiency and Color Stable Blue‐Light‐Emitting Polymers and Devices

Novel fluorene‐based blue‐light‐emitting copolymers with an ultraviolet‐blue‐light (UV‐blue‐light) emitting host and a blue‐light emitting component, 4‐N,N‐diphenylaminostilbene (DPS) have been designed and synthesized by using the palladium‐ catalyzed Suzuki coupling reaction. It was found that both copolymers poly [2,7‐(9,9‐dioctylfluorene)‐alt‐1,3‐(5‐carbazolphenylene)] (PFCz) DPS1 and PFCz‐DPS1‐OXD show pure blue‐light emission even with only 1 % DPS units because of the efficient energy transfer from the UV‐blue‐light emitting PFCz segments to the blue‐light‐emitting DPS units. Moreover, because of the efficient energy transfer/charge trapping in these copolymers, PFCz‐DPS1 and PFCz‐DPS1‐OXD show excellent device performance with a very stable pure blue‐light emission. By using a neutral surfactant poly[9,9‐bis(6'‐(diethanolamino)hexyl)‐fluorene] (PFN‐OH) as the electron injection layer, the device based on PFCz‐DPS1‐OXD5 with the configuration of ITO/PEDOT:PSS/PVK/polymer/PFN‐OH/Al showed a maximum quantum efficiency of 2.83 % and a maximum luminous efficiency of 2.50 cd A^–1. Its CIE 1931 chromaticity coordinates of (0.156, 0.080) match very well with the NTSC standard blue pixel coordinates of (0.14, 0.08). These results indicate that this kind of dopant/host copolymer could be a promising candidate for blue‐light‐emitting polymers with high efficiency, good color purity, and excellent color stability.     

High‐Efficiency Deep‐Blue Light‐Emitting Diodes Based on Phenylquinoline/Carbazole‐Based Compounds

Highly efficient deep‐blue fluorescent materials based on phenylquinoline–carbazole derivatives (PhQ‐CVz, MeO‐PhQ‐CVz, and CN‐PhQ‐CVz) are synthesized for organic light‐emitting diodes (OLEDs). The materials form high‐quality amorphous thin films by thermal evaporation and the energy levels can be easily adjusted by the introduction of different electron‐donating and electron‐withdrawing groups on carbazoylphenylquinoline. Non‐doped deep‐blue OLEDs that use PhQ‐CVz as the emitter show bright emission (Commission Internationale de L'Éclairage (CIE) coordinates, x = 0.156, y = 0.093) with an external quantum efficiency of 2.45%. Furthermore, the material works as an excellent host material for 4,4′‐bis(9‐ethyl‐3‐carbazovinylene)‐1,1′‐biphenyl dopant to get high‐performance OLEDs with excellent deep‐blue CIE coordinates (x = 0.155, y = 0.157), high power efficiency (5.98 lm W^?1), and high external quantum efficiency (5.22%).