Ce_(0.8)Gd_(0.2)O_(1.9)固体电解质的性能研究

采用干压成型后常规烧结的方法制备Ce0.8Gd0.2O1.9(CGO)固体电解质,对1 300～1 500℃空气气氛烧结4 h的各个样品进行线收缩率、相对密度、物相及微观形貌的分析。通过对比样品的电化学阻抗谱(EIS),分析了晶粒和晶界电阻的变化情况,并测定了各样品的电导率和活化能,发现1 500℃烧结的样品具有最大的电导率,测试温度800℃时达到0.03 S/cm。1 300℃烧结的样品具有最低的活化能100.29 kJ/mol。     

Tailoring of LaxSr1‐xCoyFe1‐yO3‐δ Nanostructure by Pulsed Laser Deposition

Pulsed Laser Deposition (PLD) was used to prepare thin films with the nominal composition La_0.58Sr_0.4Co_0.2Fe_0.8O_3‐δ (LSCF). The thin film microstructure was investigated as a function of PLD deposition parameters such as: substrate temperature, ambient gas pressure, target‐to‐substrate distance, laser fluence and frequency. It was found that the ambient gas pressure and the substrate temperature are the key PLD process parameters determining the thin film micro‐ and nanostructure. A map of the LSCF film nanostructures is presented as a function of substrate temperature (25–700 °C) and oxygen background pressure (0.013–0.4 mbar), with film structures ranging from fully dense to highly porous. Fully crystalline, dense, and crack‐free LSCF films with a thickness of 300 nm were obtained at an oxygen pressure lower than 0.13 mbar at a temperature of 600 °C. The obtained knowledge on the structure allows for tailoring of perovskite thin film nanostructure, e.g., for solid oxide fuel cell cathodes. A simple geometrical model is proposed, allowing estimation of the catalytic active surface area of the prepared thin films. It is shown that voids at columnar grain boundaries can result in an increase of the surface area by approximately 25 times, when compared to dense flat films.     

Influence of Point‐Defect Reaction Kinetics on the Lattice Parameter of Ce0.8Gd0.2O1.9

The kinetics of point‐defect association/dissociation reactions in Ce_0.8Gd_0.2O_1.9 and their influence on the crystal lattice parameter are investigated by monitoring thermally induced stress and strain in substrate‐ and self‐supported thin films. It is found that, in the temperature range of 100–180 °C, the lattice parameter of the substrate‐supported films and the lateral dimensions of annealed, self‐supported films both exhibit a hysteretic behavior consistent with dissociation/association of oxygen vacancy–aliovalent dopant complexes. This leads to strong deviation from linear elastic behavior, denoted in the authors' previous work as the “chemical strain” effect. At room temperature, the equilibrium state of the point defects is reached within a few months. During this period, the lattice parameter of the substrate‐supported films spontaneously increases, while the self‐supported films are observed to transform from the flat to the buckled state, indicating that formation of the dopant–vacancy complex is associated with a volume increase. The unexpectedly slow kinetics of establishing the defect equilibrium at room temperature can explain the fact that, depending on the sample history, the “observable” lattice parameters of Ce_0.8Gd_0.2O_1.9, as reported in the literature, may differ from one another by a few tenths of a percent. These findings strongly suggest that the lattice parameter of the materials with a large concentration of interacting point defects is a strong function of time and material preparation route.     

A High Power Density Intermediate‐Temperature Solid Oxide Fuel Cell with Thin (La0.9Sr0.1)0.98(Ga0.8Mg0.2)O3‐δ Electrolyte and Nano‐Scale Anode

Solid oxide fuel cells (SOFCs) with thin (La_0.9Sr_0.1)_0.98Ga_0.8Mg_0.2O_3‐δ (LSGM) electrolytes are primary candidates for achieving high (> 1 W cm^‐2) power density at intermediate (< 650 °C) temperatures. Although high power density LSGM‐electrolyte SOFCs have been reported, it is still necessary to develop a fabrication process suitable for large‐scale manufacturing and to minimize the amount of LSGM used. Here we show that SOFCs made with a novel processing method and a Sr_0.8La_0.2TiO_{3‐ α} (SLT) oxide support can achieve high power density at intermediate temperature. The SLT support is advantageous, especially compared to LSGM supports, because of its low materials cost, electronic conductivity, and good mechanical strength. The novel process is to first co‐fire the ceramic layers – porous SLT support, porous LSGM layer, and dense LSGM layer – followed by infiltration of nano‐scale Ni into the porous layers. Low polarization resistance of 0.188 Ωcm² was achieved at 650 °C for a cell with an optimized anode functional layer (AFL) and an (La,Sr)(Fe,Co)O₃ cathode. Maximum power density reached 1.12 W cm^?2 at 650 °C, limited primarily by cathode polarization and ohmic resistances, so there is considerable potential to further improve the power density.     

Voltage‐Controlled Nonstoichiometry in Oxide Thin Films: Pr0.1Ce0.9O2−δ Case Study

While the properties of functional oxide thin films often depend strongly on oxygen stoichiometry, there have been few means available for its control in a reliable and in situ fashion. This work describes the use of DC bias as a means of systematically controlling the stoichiometry of oxide thin films deposited onto yttria‐stabilized zirconia substrates. Impedance spectroscopy is performed on the electrochemical cell Pr_0.1Ce_0.9O_2?δ (PCO)/YSZ/Ag for conditions: T = 550 to 700 °C, pO ₂ = 10^?4 to 1 atm, and ΔE = ‐100 to 100 mV. The DC bias ΔE is used to control the effective pO ₂ or oxygen activity at the PCO/YSZ interface. The non‐stoichiometry (δ) of the PCO films is calculated from the measured chemical capacitance (C_chem ). These δ values, when plotted isothermally as a function of effective pO ₂, established, either by the surrounding gas composition alone, or in combination with applied bias, agree well with each other and to predictions based on a previously determined defect model. These results confirm the suitability of using bias to precisely control δ of thin films in an in situ fashion and simultaneously monitor these changes by measurement of C_chem . Of further interest is the ability to reach effective pO ₂s as high as 280 atm.     

A New Family of Proton‐Conducting Electrolytes for Reversible Solid Oxide Cells: BaHfxCe0.8−xY0.1Yb0.1O3−δ

Reversible solid oxide cells based on ceramic proton conductors have potential to be the most efficient system for large‐scale energy storage. The performance and long‐term durability of these systems, however, are often limited by the ionic conductivity or stability of the proton‐conducting electrolyte. Here new family of solid oxide electrolytes, BaHf_xCe_0.8?xY_0.1Yb_0.1O_3?δ (BHCYYb), which demonstrate a superior ionic conductivity to stability trade‐off than the state‐of‐the‐art proton conductors, BaZr_xCe_0.8?xY_0.1Yb_0.1O_3?δ (BZCYYb), at similar Zr/Hf concentrations, as confirmed by thermogravimetric analysis, Raman, and X‐ray diffraction analysis of samples over 500 h of testing are reported. The increase in performance is revealed through thermodynamic arguments and first‐principle calculations. In addition, lab scale full cells are fabricated, demonstrating high peak power densities of 1.1, 1.4, and 1.6 W cm^?2 at 600, 650, and 700 °C, respectively. Round‐trip efficiencies for steam electrolysis at 1 A cm^?2 are 78%, 72%, and 62% at 700, 650, and 600 °C, respectively. Finally, CO₂? H₂O electrolysis is carried out for over 700 h with no degradation.     

Unusual Strain Accommodation and Conductivity Enhancement by Structure Modulation Variations in Sr4Fe6O12+δ Epitaxial Films

Mixed ionic and electronic conducting (MIEC) films can be applied in solid state electrochemical devices such as oxygen separation membranes for producing pure oxygen, gas sensors or as cathode in solid oxide fuel cells. The current interest in layered perovskite‐related phases, like Sr₄Fe₆O₁₃ (SFO), arises from their significant oxygen permeability as predicted from theoretical studies. Nevertheless, before any practical application further fundamental study on this fairly unknown oxide is required mainly to assess the mechanisms affecting the transport properties. Epitaxial Sr₄Fe₆O_12+δ (SFO) films of b‐axis orientation with different thicknesses have been prepared by the pulsed laser deposition technique onto different perovskite substrates: SrTiO₃, NdGaO₃ and LaAlO₃. The strain accommodation has been found to vary as a function of film thickness as well as the substrate material causing different type of defects in the film microstructure, as well as variations in the oxygen anion content and ordering. Correspondingly, the total electrical conductivity of the films has been also found to vary significantly as a function of thickness and substrate type showing an unexpected enhancement for strained thin films. The variations in the transport properties are discussed in terms of the different strain accommodation mechanisms and the variation of the modulated structure observed for this compound.     

Enhanced Ionic Conductivity in Ce0.8Sm0.2O1.9: Unique Effect of Calcium Co‐doping

In order to identify new oxide ion‐conducting materials in the ceria family of oxides, the unique effect of co‐doping is explored and a novel series of Ce_0.8Sm_0.2–xCa_xO_2–δ compositions is identified that have enhanced properties compared to the single‐doped Ce_0.8Sm_0.2O_1.9 and Ce_0.8Ca_0.2O_1.9 compositions. Moreover, the superior characteristics of the co‐doped Ce_0.8Sm_0.2–xCa_xO_2–δ powders prepared by the mixed‐fuel process aid in obtaining 98 % dense ceramics upon sintering at 1200 °C for 6 h. Though a linear increase in conductivity is observed by replacing Sm with Ca, the composition with the maximum amount of Ca and the minimum amount of Sm exhibits a significant improvement in properties compared to the rest in the series. The composition Ce_0.80Sm_0.05Ca_0.15O_2–δ exhibits a conductivity as high as 1.22 × 10^–1 S cm^–1 at 700 °C with minimum activation energy (0.56 eV) and a superior chemical stability to reduction compared to any of the hitherto known (CaSm) compositions. The absence of Ce^III, confirmed both from X‐ray photoelectron spectroscopy and X‐ray absorption spectroscopy, strongly suggests that the observed increase in conductivity is solely due to the oxide ion conductivity and not due to the partial electronic contribution arising from the presence of Ce^III and Ce^IV. To conclude, the experimental results on the Ce_0.8Sm_0.2–xCa_xO_2–δ series underscore the unique effect of calcium co‐doping in identifying a cost‐effective new composition, with a remarkably high conductivity and enhanced chemical stability to reduction, for technological applications.     

Ferroelectric and Magnetic Properties in Room‐Temperature Multiferroic GaxFe2−xO3 Epitaxial Thin Films

GaFeO₃‐type iron oxide is a promising room‐temperature multiferroic material due to its large magnetization. To expand its usability, controlling the ferroelectric and magnetic properties is crucial. In this study, high‐quality Ga_xFe_2–xO₃ (x = 0–1) epitaxial films are fabricated and their properties are systematically investigated. All films exhibit room‐temperature out‐of‐plane ferroelectricity, showing that the coercive electric field (E_c) decreases monotonically with x. Additionally, the films show in‐plane ferrimagnetism with a Curie temperature (T_C) >350 K at x = 0–0.6. The coercive magnetic field (H_c) decreases with x at x ≤ 0.6, but shows a constant value at x > 0.6, whereas the saturated magnetization (M_s) increases with x at x ≤ 0.6, but decreases with x at x > 0.6. X‐ray magnetic circular dichroism reveals that the large magnetization at x = 0.6 is derived from Fe³⁺ (3d⁵) at octahedral sites. The controllable range of the E_c, H_c, and M_s values at room temperature (400–800 kV cm^?1, 1–8 kOe, and 0.2–0.6 µ_B/f.u.) is very wide and differs from those of well‐known multiferroic BiFeO₃. Furthermore, the Ga_xFe_2?xO₃ films exhibit room‐temperature magnetocapacitance effects, indicating that adjusting T_C near room temperature is useful to achieve large room‐temperature magnetocapacitance behavior.     

Precise Tuning of (YBa2Cu3O7‐δ)1‐x:(BaZrO3)x Thin Film Nanocomposite Structures

Self‐assembled nanocomposite films and coatings have huge potential for many functional and structural applications. However, control and manipulation of the nanostructures is still at very early stage. Here, guidelines are established for manipulating the types of composite structures that can be achieved. In order to do this, a well studied (YBa₂Cu₃O_7‐δ)_1‐x:(BaZrO₃)_x ‘model’ system is used. A switch from BaZrO₃ nanorods in YBa₂Cu₃O_7‐δ matrix to planar, horizontal layered plates is found with increasing x, with a transitional cross‐ply structure forming between these states at x = 0.4. The switch is related to a release in strain energy which builds up in the YBa₂Cu₃O_7‐δ with increasing x. At x = 0.5, an unusually low strain state is observed in the planar composite structure, which is postulated to arise from a pseudo‐spinodal mechanism.     

掺钠钛酸铋薄膜的制备及主要性能的研究

采用金属有机溶液分解法（MOSD）在SiO2/p-Si（111）衬底上制备了Bi3．25 Na2．25 Ti3O12（BNaT）薄膜。利用X-射线衍射技术研究了薄膜的结构和结晶性，同时还研究了不同退火温度对漏电流、积累态电容、损耗因子的影响及薄膜的I-V、C-V和ε-f性能。     

Elasticity of Solids with a Large Concentration of Point Defects II. The Chemical Strain Effect in Ce0.8Gd0.2O1.9

The chemical strain effect describes a mechanism of stress relaxation in solids that can be attributed to the conversion of elastic energy into chemical energy of point defects. Experimental confirmation of this effect is presented here for the case of thin self‐supported films of the ionic conductor Ce_0.8Gd_0.2O_1.9. If heated slowly, (< 5 °C min^–1) these films remain flat within the temperature range of 25–180 °C. If heated more rapidly than ～ 20 °C min^–1, the films buckle above 53 °C, but after ～ 3–30 min at elevated temperatures, they become flat again, demonstrating that stress‐relaxation has taken place. The degree of stress reduction observed is consistent with the value calculated for this system using Boltzmann statistics in the case of small strain. These findings confirm the concept of stress adaptability in solids that we introduced in Part I and suggest that a large class of such materials, which exhibit the chemical strain effect, is likely to be found.     

(Bi,Yb)4Ti3O12铁电薄膜的制备

采用稀有金属镱元素对钛酸铋进行掺杂,以期获得性能较好的(Bi,Yb)4Ti3O12铁电薄膜.采用溶胶-凝胶旋涂法在p型Si(100)基底上成功地沉积出(Bi34,Yb06)Ti3O12[BYT]铁电薄膜.用X射线衍射法对其结构及其成份进行了表征,用铁电分析仪(RT66A)测试了其铁电性.并就影响BYT薄膜铁电性能的因素进行了分析.     

Crystallization and Microstructure of Yttria‐Stabilized‐Zirconia Thin Films Deposited by Spray Pyrolysis

The crystallization and microstuctural evolution upon thermal treatment of yttria‐stabilized zirconia (YSZ, Zr_0.85Y_0.15O_1‐δ) thin films deposited by spray pyrolysis at 370 °C are investigated. The as‐deposited YSZ films are mainly amorphous with a few crystallites of 3 nm in diameter and crystallize in the temperature range from 400 °C to 900 °C. Fully crystalline YSZ thin films are obtained after heating to 900 °C or by isothermal dwells for at least 17 h at a temperature as low as 600 °C. Three exothermic heat releasing processes with activation energies are assigned to the crystallization and the oxidation of residuals from the precursor. Microporosity develops during crystallization and mass loss. During crystallization the microstrain decreases from 4% to less than 1%. Simultaneously, the average grain size increases from 3 nm to 10 nm. The tetragonal phase content of the YSZ thin film increases with increasing temperature and isothermal dwell time. Based on these data, gentle processing conditions can be designed for zirconia based thin films, which meet the requirements for Si‐based microfabrication of miniaturized electrochemical devices such as micro‐solid oxide fuel cells or sensors.     

Formation of Highly Crystallized β‐PbO Thin Films by Cathodic Electrodeposition of Pb and Its Rapid Oxidation in Air

The process of electrodeposition of β‐PbO thin films from aqueous solutions of Pb^II salts has been studied in detail. Contrary to the mechanism assumed in previous studies, thin films of crystalline β‐PbO are obtained after cathodic electrolysis in aqueous solutions of various soluble salts of Pb^II (Pb(NO₃)₂, Pb(ClO₄)₂, and Pb(CH₃COO)₂), and in both the presence and the absence of O₂, thus indicating no contribution of OH^– generation by electroreduction of NO₃^– and/or O₂ to the formation of β‐PbO. A gradual color change is noted: a freshly electrodeposited gray film turns yellow as it dries in air. Drying of the films under controlled atmosphere (Ar or O₂), combined with scanning electron microscopy (SEM) observation and X‐ray diffraction (XRD) measurement, has revealed that freshly deposited films are of metallic Pb, which are oxidized and converted into β‐PbO. Such a reaction is operative only when a freshly electrodeposited activated wet Pb film is in contact with gaseous O₂. Despite the rapid conversion of a solid material, the resultant β‐PbO thin films are highly crystallized and possess highly ordered internal nanostructure. Elongated nanoparticles (30 nm × 100 nm) are assembled in a regular alignment to compose a large platelet (greater than 10 μm in size) with single‐crystalline character, as revealed by transmission electron microscopy (TEM) observation and selected‐area electron diffraction (SAED) measurement.     

Optimized La0.6Sr0.4CoO3–δ Thin‐Film Electrodes with Extremely Fast Oxygen‐Reduction Kinetics

La_0.6Sr_0.4CoO_3–δ (LSC) thin‐film electrodes are prepared on yttria‐stabilized zirconia (YSZ) substrates by pulsed laser deposition at different deposition temperatures. The decrease of the film crystallinity, occurring when the deposition temperature is lowered, is accompanied by a strong increase of the electrochemical oxygen exchange rate of LSC. For more or less X‐ray diffraction (XRD)‐amorphous electrodes deposited between ca. 340 and 510 °C polarization resistances as low as 0.1 Ω cm² can be obtained at 600 °C. Such films also exhibit the best stability of the polarization resistance while electrodes deposited at higher temperatures show a strong and fast degradation of the electrochemical kinetics (thermal deactivation). Possible reasons for this behavior and consequences with respect to the preparation of high‐performance solid oxide fuel cell (SOFC) cathodes are discussed.     

衬底对钛酸铋铁电薄膜生长及性能的影响

采用溶胶–凝胶工艺在Si和Pt/Ti/SiO2/Si两种衬底上制备了Bi4Ti3O12铁电薄膜,研究了衬底对Bi4Ti3O12铁电薄膜生长及性能的影响。研究表明:Pt/Ti/SiO2/Si基Bi4Ti3O12薄膜的剩余极化较高但易出现焦绿石相,而Si基Bi4Ti3O12薄膜易于沿c轴取向生长,有利于改善铁电薄膜与硅衬底之间的界面特性,但8mC/cm2的剩余极化却比前者有所降低。     

High‐Performance Micro‐Solid Oxide Fuel Cells Fabricated on Nanoporous Anodic Aluminum Oxide Templates

Micro‐solid oxide fuel cells (μ‐SOFCs) are fabricated on nanoporous anodic aluminum oxide (AAO) templates with a cell structure composed of a 600‐nm‐thick AAO free‐standing membrane embedded on a Si substrate, sputter‐deposited Pt electrodes (cathode and anode) and an yttria‐stabilized zirconia (YSZ) electrolyte deposited by pulsed laser deposition (PLD). Initially, the open circuit voltages (OCVs) of the AAO‐supported μ‐SOFCs are in the range of 0.05 V to 0.78 V, which is much lower than the ideal value, depending on the average pore size of the AAO template and the thickness of the YSZ electrolyte. Transmission electron microscopy (TEM) analysis reveals the formation of pinholes in the electrolyte layer that originate from the porous nature of the underlying AAO membrane. In order to clog these pinholes, a 20‐nm thick Al₂O₃ layer is deposited by atomic layer deposition (ALD) on top of the 300‐nm thick YSZ layer and another 600‐nm thick YSZ layer is deposited after removing the top intermittent Al₂O₃ layer. Fuel cell devices fabricated in this way manifest OCVs of 1.02 V, and a maximum power density of 350 mW cm^?2 at 500 °C.     

Uniform π‐System Alignment in Thin Films of Template‐Grown Dicarbonitrile‐Oligophenyls

The ordering and conformational properties of dicarbonitrile‐para‐oligophenyls are studied with complementary methods, namely X‐ray structure analysis, low‐temperature scanning tunneling microscopy, and near‐edge X‐ray absorption fine‐structure spectroscopy. The packing of the functionalized variants differs from their technologically interesting para‐oligophenyl counterparts, both in the bulk crystal phase and in thin films grown by organic molecular beam epitaxy (OMBE) under ultra‐high vacuum conditions on the Ag(111) surface. In the crystal phase, the conformation depends on the number n of phenyl rings, exhibiting an intriguing screw‐like structure in the case of n = 4 at room temperature as well as at 180 K. For OMBE‐grown thin films, the whole series acquires the same type of conformation, characterized by alternately twisted phenyl rings, similar to the pure oligophenyl species. However, for all tested molecules, the orientation of the molecular reference plane is uniform within the entire film and coincides with the surface plane. This contrasts with the herringbone ordering adopted by the phenyl backbones without the carbonitrile groups. Our results demonstrate how the functionalization of moieties with extended conjugated electron systems can help to improve the structural homogeneity in technologically relevant organic thin films.     

The Formation of Performance Enhancing Pseudo‐Composites in the Highly Active La1–xCaxFe0.8Ni0.2O3 System for IT‐SOFC Application

The La_1–xCa_xFe_0.8Ni_0.2O_3–δ (0 ≤ x ≤ 0.9) system is investigated for potential application as a cathode material for intermediate temperature solid oxide fuel cells (IT‐SOFCs). A broad range of experimental techniques have been utilized in order to elucidate the characteristics of the entire compositional range. Low A‐site Ca content compositions (x ≤ 0.4) feature a single perovskite solid solution. Compositions with 40% Ca content (x = 0.4) exhibit the highest electrical and ionic conductivities of these single phase materials (250 and 1.9 × 10^?3 S cm^?1 at 800 °C, respectively), a level competitive with state‐of‐the‐art (La,Sr)(Fe,Co)O₃. Between 40 and 50% Ca content (0.4 > x > 0.5) a solubility limit is reached and a secondary, brownmillerite‐type phase appears for all higher Ca content compositions (0.5 ≤ x ≤ 0.9). While typically seen as detrimental to electrochemical performance in cathode materials, this phase brings with it ionic conductivity at operational temperatures. This gives rise to the effective formation of pseudo‐composite materials which feature significantly enhanced performance characteristics, while also providing the closest match in thermal expansion behavior to typical electrolyte materials. This all comes with the advantage of being produced through a simple, single‐step, low‐cost production route without the issues associated with typical composite materials. The highest performing pseudo‐composite material (x = 0.5) exhibits electronic conductivity of 300–350 S cm^?1 in the 600–800 °C temperature range while the best polarisation resistance (R_p) values of approximately 0.2 Ω cm² are found in the 0.5 ≤ x ≤ 0.7 range.