High‐Performance Dopamine Sensors Based on Whole‐Graphene Solution‐Gated Transistors

Solution‐gated graphene transistors with graphene as both channel and gate electrodes are fabricated for the first time and used as dopamine sensors with the detection limit down to 1 nM, which is three orders of magnitude better than that of conventional electrochemical measurements. The sensing mechanism is attributed to the change of effective gate voltage applied on the transistors induced by the electro‐oxidation of dopamine at the graphene gate electrodes. The interference from glucose, uric acid, and ascorbic acid on the dopamine sensor is characterized. The selectivity of the dopamine sensor is dramatically improved by modifying the gate electrode with a thin Nafion film by solution process. This work paves the way for developing many other biosensors based on the solution‐gated graphene transistors by specifically functionalizing the gate electrodes. Because the devices are mainly made of graphene, they are potentially low cost and ideal for high‐density integration as multifunctional sensor arrays.     

Manipulating the Sensitivity and Selectivity of OECT‐Based Biosensors via the Surface Engineering of Carbon Cloth Gate Electrodes

Organic electrochemical transistors (OECTs) provide the opportunity to fabricate flexible biosensors with high sensitivity. However, there are currently very few methods to improve the selectivity of OECT sensors. In this work, nitrogen/oxygen‐codoped carbon cloths (NOCCs) are prepared by the carbonization of polyaniline‐wrapped carbon cloths at 750 °C under different atmospheres. The resulting NOCC electrodes exhibit different electrochemical sensing behaviors toward ascorbic acid (AA) and dopamine (DA), enabling the fabrication of OECT sensors with high sensitivity and selectivity that are comparable to the state‐of‐the‐art OECT sensors for AA and DA. The structural characterization and theoretical calculation reveal that the electrochemical sensing behaviors of the NOCC electrodes are closely related to their surface compositions, providing an unprecedented strategy for the design of flexible OECT sensors with high sensitivity and selectivity.     

铂黑/二茂铁修饰MEMS电极的葡萄糖传感器

利用MEMS技术小批量加工了薄膜金电极。采用电化学沉积法在金电极表面修饰纳米铂黑颗粒,以有机功能性材料二茂铁作为电子媒介体,通过戊二醛-牛血清白蛋白共价交联固定葡萄糖氧化酶制得葡萄糖生物传感器。考察了不同修饰电极的电化学行为以及酶固定量和戊二醛浓度对传感器响应特性的影响。实验结果表明:该传感器响应时间仅为5s,在0.29V的低工作电压下,线性测量范围可达到0.5～22mmol/L,灵敏度为50.35μA/(cm2.mmol.L-1),相关系数为0.9925,差异系数为4.28%。     

Nanostructuring Platinum Nanoparticles on Multilayered Graphene Petal Nanosheets for Electrochemical Biosensing

Hybridization of nanoscale metals and carbon nanotubes into composite nanomaterials has produced some of the best‐performing sensors to date. The challenge remains to develop scalable nanofabrication methods that are amenable to the development of sensors with broad sensing ranges. A scalable nanostructured biosensor based on multilayered graphene petal nanosheets (MGPNs), Pt nanoparticles, and a biorecognition element (glucose oxidase) is presented. The combination of zero‐dimensional nanoparticles on a two‐dimensional support that is arrayed in the third dimension creates a sensor platform with exceptional characteristics. The versatility of the biosensor platform is demonstrated by altering biosensor performance (i.e., sensitivity, detection limit, and linear sensing range) through changing the size, density, and morphology of electrodeposited Pt nanoparticles on the MGPNs. This work enables a robust sensor design that demonstrates exceptional performance with enhanced glucose sensitivity (0.3 µM detection limit, 0.01–50 mM linear sensing range), a long stable shelf‐life (>1 month), and a high selectivity over electroactive, interfering species commonly found in human serum samples.     

Dual‐Gate Organic Field‐Effect Transistors as Potentiometric Sensors in Aqueous Solution

Buried electrodes and protection of the semiconductor with a thin passivation layer are used to yield dual‐gate organic transducers. The process technology is scaled up to 150‐mm wafers. The transducers are potentiometric sensors where the detection relies on measuring a shift in the threshold voltage caused by changes in the electrochemical potential at the second gate dielectric. Analytes can only be detected within the Debye screening length. The mechanism is assessed by pH measurements. The threshold voltage shift depends on pH as ΔV_th = (C_top/C_bottom) × 58 mV per pH unit, indicating that the sensitivity can be enhanced with respect to conventional ion‐sensitive field‐effect transistors (ISFETs) by adjusting the ratio of the top and bottom gate capacitances. Remaining challenges and opportunities are discussed.     

C60场效应晶体管的制备及修饰层对器件性能影响的研究

以重掺杂Si片作为衬底,SiOe／聚甲基丙烯酸甲酯（PMMA）为双栅绝缘层,C60为有源层,制备了不同修饰层的有机场效应晶体管（OFETs）;研究了不同修饰层的器件对于场效应性能的影响。实验表明,与未加修饰层的器件相比,经过修饰的器件性能有一定的提高,其中Alqa／LiF双修饰层器件的场效应迁移率达到最大,为1．6×1...     

Glucose Detection Devices and Methods Based on Metal–Organic Frameworks and Related Materials

Assessment of glucose concentration is important in the diagnosis and treatment of diabetes. Since the introduction of enzymatic glucose biosensors, scientific and technological advances in nanomaterials have led to the development of new generations of glucose sensors. This field has witnessed major developments over the last decade, as the novel nanomaterials are capable of efficiently catalyzing glucose directly (i.e., act as artificial enzymes, therefore defined nanozymes) or to entrap enzymes that are able to oxidize glucose. Among other nanomaterials, metal–organic frameworks (MOFs) have recently provided a tremendous basis to construct glucose sensing devices. MOFs are large porous crystalline compounds with versatile structural and tuneable chemical properties. In addition, they possess catalytic, peroxidase-like, and electrochemical redox activity. This review comprehensively summarizes the general characteristics of MOFs, their subtypes, and MOF composites, as well as MOF-derived materials employed to construct electrochemical, optical, transistor, and microfluidic devices for the detection of glucose. They include enzymatic, nonenzymatic, wearable, and flexible sensing devices and methods. The review also outlines the design and synthesis of MOFs and the working principles of the different transduction-based glucose sensors and highlights the current challenges and future perspectives.     

The Synergistic Effect of Prussian‐Blue‐Grafted Carbon Nanotube/Poly(4‐vinylpyridine) Composites for Amperometric Sensing

Because of its high activity and selectivity toward the reduction of hydrogen peroxide and oxygen, Prussian blue (PB) is usually considered as an “artificial enzyme peroxidase” and has been extensively used in the construction of electrochemical biosensors. In this study, we report on the construction of amperometric biosensors via grafting PB nanoparticles on the polymeric matrix of multiwalled carbon nanotubes (MWCNTs) and poly(4‐vinylpyridine) (PVP). The MWCNT/PVP/PB composite films were synthesized by casting films of MWCNTs wrapped with PVP on gold electrodes followed by electrochemical deposition of PB on the MWCNT/PVP matrix. The electrode modified with the MWCNT/PVP/PB composite film shows prominent electrocatalytic activity toward the reduction of hydrogen peroxide, which can be explained by the remarkable synergistic effect of the MWCNTs and PB. Therefore, fast amperometric response of this sensor to hydrogen peroxide was observed with a detection sensitivity of 1.3 μA μM ^–1 of H₂O₂ per square centimeter area and a detection limit of 25 nM . These results are much better than those reported for PB‐based amperometric sensors. In addition, a glucose biosensor fabricated by casting an additional glucose oxidase (GOD) containing Nafion film above the MWCNT/PVP/PB composite film shows promise for the sensitive and fast detection of glucose. The observed high stability, high sensitivity, and high reproducibility of the MWCNT/PVP/PB composite films make them promising for the reliable and durable detection of hydrogen peroxide and glucose.     

Ultimately Sensitive Organic Bioelectronic Transistor Sensors by Materials and Device Structure Design

Organic bioelectronic sensors are gaining momentum as they can combine high‐performance sensing level with flexible large‐area processable materials. This opens to potentially highly powerful sensing systems for point‐of‐care health monitoring and diagnostics at low cost. Prominent to detect biochemical recognition events, are electrolyte‐gated organic field‐effect transistors (EGOFETs) and organic electrochemical transistors (OECTs) as they are easily fabricated and operated. EGOFETs are recently shown to be capable of label‐free single‐molecule detections, even in serum. This progress report aims to provide a critical perspective through a selected overview of the literature on both EGOFET and OECT biosensors. Attention is paid to correctly attribute them to the potentiometric and amperometric biosensor categories, which is important to set the right conditions for quantification purposes. Moreover, to deepen the understanding of the sensing mechanisms, with the support of unpublished data, focus is put on two among the most critical aspects, namely, the capacitance interplay and the role of Faradaic currents. The final aim is to provide a rationale of the functional mechanisms encompassing both EGOFET and OECT sensors, to improve materials and devices' designs taking advantage of the processes that enhance the sensing response enabling the extremely high‐performance level resulting in ultimate sensitivity, selectivity, and fast response.     

Polyelectrolyte Dielectrics for Flexible Low‐Voltage Organic Thin‐Film Transistors in Highly Sensitive Pressure Sensing

Organic thin‐film transistors (OTFTs) can provide an effective platform to develop flexible pressure sensors in wearable electronics due to their good signal amplification function. However, it is particularly difficult to realize OTFT‐based pressure sensors with both low‐voltage operation and high sensitivity. Here, controllable polyelectrolyte composites based on poly(ethylene glycol) (PEG) and polyacrylic acid (PAA) are developed as a type of high‐capacitance dielectrics for flexible OTFTs and ultrasensitive pressure sensors with sub‐1 V operation. Flexible OTFTs using the PAA:PEG dielectrics show good universality and greatly enhanced electrical performance under a much smaller operating voltage of ?0.7 V than those with a pristine PAA dielectric. The low‐voltage OTFTs also exhibit excellent flexibility and bending stability under various bending radii and long cycles. Flexible OTFT‐based pressure sensors with low‐voltage operation and superhigh sensitivity are demonstrated by using a suspended semiconductor/dielectric/gate structure in combination with the PAA:PEG dielectric. The sensors deliver a record high sensitivity of 452.7 kPa^?1 under a low‐voltage of ?0.7 V, and excellent operating stability over 5000 cycles. The OTFT sensors can be built into a wearable sensor array for spatial pressure mapping, which shows a bright potential in flexible electronics such as wearable devices and smart skins.     

Porous Organic Field‐Effect Transistors for Enhanced Chemical Sensing Performances

The thin‐film structures of chemical sensors based on conventional organic field‐effect transistors (OFETs) can limit the sensitivity of the devices toward chemical vapors, because charge carriers in OFETs are usually concentrated within a few molecular layers at the bottom of the organic semiconductor (OSC) film near the dielectric/semiconductor interface. Chemical vapor molecules have to diffuse through the OSC films before they can interact with charge carriers in the OFET conduction channel. It has been demonstrated that OFET ammonia sensors with porous OSC films can be fabricated by a simple vacuum freeze‐drying template method. The resulted devices can have ammonia sensitivity not only much higher than the pristine OFETs with thin‐film structure but also better than any previously reported OFET sensors, to the best of our knowledge. The porous OFETs show a relative sensitivity as high as 340% ppm^?1 upon exposure to 10 parts per billion (ppb) NH₃. In addition, the devices also exhibit decent selectivity and stability. This general and simple strategy can be applied to a wide range of OFET chemical sensors to improve the device sensitivity.     

Monitoring the Channel Formation in Organic Field‐Effect Transistors via Photoinduced Charge Transfer

Conducting channel formation in organic field‐effect transistors (OFETs) is considered to happen in the organic semiconductor layer very close to the interface with the gate dielectric. In the gradual channel approximation, the local density of accumulated charge carriers varies as a result of applied gate bias, with the majority of the charge carriers being localized in the first few semiconductor monolayers close to the dielectric interface. In this report, a new concept is employed which enables the accumulation of charge carriers in the channel by photoinduced charge transfer. An OFET employing C₆₀ as a semiconductor and divinyltetramethyldisiloxane‐bis(benzocyclobutene) as the gate dielectric is modified by a very thin noncontinuous layer of zinc‐phthalocyanine (ZnPc) at the semiconductor/dielectric interface. With this device geometry, it is possible to excite the phthalocyanine selectively and photogenerate charges directly at the semiconductor/dielectric interface via photoinduced electron transfer from ZnPc onto C₆₀. Thus the formation of a gate induced and a photoinduced channel in the same device can be correlated.     

The Effects of Moisture in Low‐Voltage Organic Field‐Effect Transistors Gated with a Hydrous Solid Electrolyte

The concept of using ion conducting membranes (50–150 μm thick) for gating low‐voltage (1 V) organic field‐effect transistors (OFETs) is attractive due to its low‐cost and large‐area manufacturing capabilities. Furthermore, the membranes can be tailor‐made to be ion conducting in any desired way or pattern. For the electrolyte gated OFETs in general, the key to low‐voltage operation is the electrolyte “insulator” (the membrane) that provides a high effective capacitance due to ionic polarization within the insulator. Hydrous ion conducting membranes are easy to process and readily available. However, the role of the water in combination with the polymeric semiconductor has not yet been fully clarified. In this work electrical and optical techniques are utilized to carefully monitor the electrolyte/semiconductor interface in an ion conducting membrane based OFET. The main findings are that 1) moisture plays a major part in the transistor operation and careful control of both the ambient atmosphere and the potential differences between the electrodes are required for stable and consistent device behavior, 2) the obtained maximum effective capacitance (5 μF cm^?2) of the membrane suggests that the electric double layer is distributed over a broad region within the polyelectrolyte, and 3) electromodulation spectroscopy combined with current–voltage characteristics provide a method to determine the threshold gate voltage from an electrostatic field‐effect doping to a region of (irreversible) electrochemical perturbation of the polymeric semiconductor.     

Roadmap to Gigahertz Organic Transistors

Despite the large body of research conducted on organic transistors, the transit frequency of organic field‐effect transistors has seen virtually no improvement for a decade and remains far below 1 GHz. One reason is that most of the research is still focused on improving the charge‐carrier mobility, a parameter that has little influence on the transit frequency of short‐channel transistors. By examining the fundamental equations for the transit frequency of field‐effect transistors and by extrapolating recent progress on the relevant device parameters, a roadmap to gigahertz organic transistors is derived.     

Vertical Organic Field‐Effect Transistors

Field‐effect transistors are the fundamental building blocks for electronic circuits and processors. Compared with inorganic transistors, organic field‐effect transistors (OFETs), featuring low cost, low weight, and easy fabrication, are attractive for large‐area flexible electronic devices. At present, OFETs with planar structures are widely investigated device structures in organic electronics and optoelectronics; however, they face enormous challenges in realizing large current density, fast operation speed, and outstanding mechanical flexibility for advancing their potential commercialized applications. In this context, vertical organic field‐effect transistors (VOFETs), composed of vertically stacked source/drain electrodes, could provide an effective approach for solving these questions due to their inherent small channel length and unique working principles. Since the first report of VOFETs in 2004, impressive progress has been witnessed in this field with the improvement of device performance. The aim of this review is to give a systematical summary of VOFETs with a special focus on device structure optimization for improved performance and potential applications demonstrated by VOFETs. An overview of the development of VOFETs along with current challenges and perspectives is also discussed. It is hoped that this review is timely and valuable for the next step in the rapid development of VOFETs and their related research fields.     

Enhanced Charge Injection Through Nanostructured Electrodes for Organic Field Effect Transistors

Nanosphere lithography is used to process nanopore‐structured electrodes, which are applied into the fabrication of bottom‐gate, bottom‐contact configuration organic field effect transistors (OFETs) to serve as source/drain elecrodes. The introduction of this nanopore‐structure electrode facilitates the forming of nanopore‐structure pentacene layers with small grain boundaries at the electrode interface, and then reduces the contact resistance, contact‐induces the growth of pentacene and accordingly improves the mobility of charge carriers in the OFETs about 20 times as compared with results in literature through enhancing the charge carrier injection. It is believed that this structure of electrode is a valuable approach for improving organic filed effect transistors.     

Reconfigurable Multifunctional Ambipolar Polymer-Blend Transistors with Improved Switching-Off Capability

Ambipolar field-effect transistors allowing both holes and electrons transport can work in different states, which are attractive for simplifying the manufacture of circuits and endowing the circuits with reconfigurable multi-functionalities. However, conventional ambipolar transistors intrinsically suffer from poor switching-off capability because the gate electrode is not able to simultaneously deplete holes and electrons across the entire transport channel, which hurdles the practical applications. This study shows that the switching-off capability of polymer ambipolar transistor is significantly improved by up to three orders by introducing non-uniformly distributed compensation potentials along the channel to synchronically tune the charge transport at different channel locations. The non-uniform compensation potential is experimentally generated by the non-uniformly distributed electret charges, which are pre-injected into the insulators from source and drain electrodes. By this method, both n-type and p-type operations with high mobility (2.2 and 0.8 cm²s⁻¹V⁻¹ respectively) and high on/off ratio (10⁵) are obtained in the same device, and the different states are reversibly switchable. Moreover, this method endows the device with diverse device characteristics and reconfigurable multi-functionalities, which promotes the application of ambipolar transistors in complementary metal-oxide semiconductors-like circuits and some emerging electronics, including reconfigurable devices, multi-level memories, and artificial synapses.     

Anodization for Simplified Processing and Efficient Charge Transport in Vertical Organic Field‐Effect Transistors

Vertical organic transistors are an attractive alternative to realize short channel transistors, which are required for powerful electronic devices and flexible electronic circuits operating at high frequencies. Unfortunately, the vertical device architecture comes along with an increased device fabrication complexity, limiting the potential of this technology for application. A new design of vertical organic field‐effect transistors (VOFETs) with superior electrical performance and simplified processing is reported. By using electrochemical oxidized aluminum oxide (AlO_x) as a pseudo self‐aligned charge‐blocking structure in vertical organic transistors, direct leakage current between the source and drain can be effectively suppressed, enabling VOFETs with very low off‐current levels despite the short channel length. The anodization technique is easy to apply and can be surprisingly used on both n‐type and p‐type organic semiconductor thin films with significant signs of degradation. Hence, the anodization technique enables a simplified process of high‐performance p‐type and n‐type VOFETs, paving the road toward complementary circuits made of vertical transistors.     

One‐Pot Preparation of Polymer–Enzyme–Metallic Nanoparticle Composite Films for High‐Performance Biosensing of Glucose and Galactose

New polymer–enzyme–metallic nanoparticle composite films with a high‐load and a high‐activity of immobilized enzymes and obvious electrocatalysis/nano‐enhancement effects for biosensing of glucose and galactose are designed and prepared by a one‐pot chemical pre‐synthesis/electropolymerization (CPSE) protocol. Dopamine (DA) as a reductant and a monomer, glucose oxidase (GOx) or galactose oxidase (GaOx) as the enzyme, and HAuCl₄ or H₂PtCl₆ as an oxidant to trigger DA polymerization and the source of metallic nanoparticles, are mixed to yield polymeric bionanocomposites (PBNCs), which are then anchored on the electrode by electropolymerization of the remaining DA monomer. The prepared PBNC material has good biocompatibility, a highly uniform dispersion of the nanoparticles with a narrow size distribution, and high load/activity of the immobilized enzymes, as verified by transmission/scanning electron microscopy and electrochemical quartz crystal microbalance. The thus‐prepared enzyme electrodes show a largely improved amperometric biosensing performance, e.g., a very high detection sensitivity (99 or 129 µA cm^?2 mM ^?1 for glucose for Pt PBNCs on bare or platinized Au), a sub‐micromolar limit of detection for glucose, and an excellent durability, in comparison with those based on conventional procedures. Also, the PBNC‐based enzyme electrodes work well in the second‐generation biosensing mode. The proposed one‐pot CPSE protocol may be extended to the preparation of many other functionalized PBNCs for wide applications.     

Solution‐Processed Zinc Oxide as High‐Performance Air‐Stable Electron Injector in Organic Ambipolar Light‐Emitting Field‐Effect Transistors

Electron injection from the source–drain electrodes limits the performance of many n‐type organic field‐effect transistors (OFETs), particularly those based on organic semiconductors with electron affinities less than 3.5 eV. Here, it is shown that modification of gold source–drain electrodes with an overlying solution‐deposited, patterned layer of an n‐type metal oxide such as zinc oxide (ZnO) provides an efficient electron‐injecting contact, which avoids the use of unstable low‐work‐function metals and is compatible with high‐resolution patterning techniques such as photolithography. Ambipolar light‐emitting field‐effect transistors (LEFETs) based on green‐light‐emitting poly(9,9‐dioctylfluorene‐alt‐benzothiadiazole) (F8BT) and blue‐light‐emitting poly(9,9‐dioctylfluorene) (F8) with electron‐injecting gold/ZnO and hole‐injecting gold electrodes show significantly lower electron threshold voltages and several orders of magnitude higher ambipolar currents, and hence light emission intensities, than devices with bare gold electrodes. Moreover, different solution‐deposited metal oxide injection layers are compared. By spin‐coating ZnO from a low‐temperature precursor, processing temperatures could be reduced to 150 °C. Ultraviolet photoemission spectroscopy (UPS) shows that the improvement in transistor performance is due to reduction of the electron injection barrier at the interface between the organic semiconductor and ZnO/Au compared to bare gold electrodes.