Characterization of luminescence properties of V2O5-capped ZnSe nanowires

ZnSe-core/V2O5-shell nanowires were synthesized by the thermal evaporation of ZnSe powders on gold-coated Si (100) substrates followed by the sputter depositon of V2O5. Scanning electron microscopic images showed that the core-shell nanowires were a few tens to a few hundreds of nanometers in diameter and a few hundreds of micrometers in length. Transmission electron microscopy and X-ray diffraction analyses revealed that the core and shell of the core-shell nanowires were single crystal wurtzite-structured ZnSe and amorphous V2O5, respectively. Photoluminescence measurement showed that the core-shell nanowires as-synthesized or annealed in an oxidative atmosphere had a green emission band centered at around 520 nm whereas the as-synthesized ZnSe nanowires and the ZnSe-core/V2O5-shell nanowires annealed in a reducing atmosphere had a yellow emission band centered at around 590 nm. Our results also showed that V2O5 capping with an optimal thickness and subsequent annealing in a reducing atmosphere could significantly enhance the emission intensity of the ZnSe nanowires. In addition, the origins of the enhancement in intensity and the blue shift of the major emission by V2O5 capping are discussed.     

Fluorescence spectroscopy of electrochemically self-assembled ZnSe and Mn:ZnSe nanowires

We report room temperature fluorescence spectroscopy (FL) studies of ZnSe and Mn-doped ZnSe nanowires of different diameters (10, 25, 50?nm) produced by an electrochemical self-assembly technique. All samples exhibit increasing blue-shift in the band edge fluorescence with decreasing wire diameter because of quantum confinement. The 10?nm ZnSe nanowires show four distinct emission peaks due to band-to-band recombination, exciton recombination, recombination via surface states and via band gap (trap) states. The exciton binding energy in these nanowires exhibits a giant increase (～10-fold) over the bulk value due to quantum confinement, since the effective wire radius (taking into account side depletion) is smaller than the exciton Bohr radius in bulk ZnSe. The 25 and 50?nm diameter wires show only a single FL peak due to band-to-band electron-hole recombination. In the case of Mn-doped ZnSe nanowires, the band edge luminescence in 10?nm samples is significantly quenched by Mn doping but not the exciton luminescence, which remains relatively unaffected. We observe additional features due to Mn(2+) ions. The spectra also reveal that the emission from Mn(2+) states increases in intensity and is progressively red-shifted with increasing Mn concentration.     

Direct growth of core-shell SiC-SiO(2) nanowires and field emission characteristics

A simple, direct synthesis method was used to grow core-shell SiC-SiO(2) nanowires by heating NiO-catalysed silicon substrates. A carbothermal reduction of WO(3) provided a reductive environment and carbon source to synthesize crystalline SiC nanowires covered with SiO(2) sheaths at the growth temperature of 1000-1100?°C. Transmission electron microscopy showed that the SiC core was 15-25?nm in diameter and the SiO(2) shell layer was an average of 20?nm in thickness. The thickness of the SiO(2) shell layer could be controlled using hydrofluoric acid (HF) etching. Field emission results of core-shell SiC-SiO(2) and bare SiC nanowires showed that the SiC nanowires coated with an optimum SiO(2) thickness (10?nm) have a higher field emission current than the bare SiC nanowires.     

Tailoring the photoluminescence of MgO nanowires using the Ag shell layers and nanoparticles

We fabricated MgO/Ag core-shell nanowires, where core nanowires were coated with a conformal layer of Ag via sputtering. By subsequent thermal annealing, we generated Ag nanoparticles. Photoluminescence (PL) studies revealed that Ag-shell coating decreased the intensity of blue emission, whereas that of UV emission remained almost invariant. The subsequent annealing has induced an additional green emission band. We discuss here the possible mechanism by which the PL properties have been tailored by Ag-layer coating and by forming nanoparticles. This approach can be applied to tailor and improve the optical properties of different composite nanostructures.     

Optical emission and absorption spectra of Zn–ZnO core-shell nanostructures

The core-shell Zn–ZnO nanostructures were fabricated from Zn-powder embedded in graphite (i.e. carbon matrix) in a thin-films form by an inexpensive vacuum arc technique followed by laser ablation. The grazing incidence X-ray diffraction pattern shows that intensity of Zn-peak decreases, and subtle ZnO-peak increasing with the increase in laser power. The high resolution transmission electron microscopic study clearly exhibits the formation of a core-shell nanostructure as fabricated by laser ablation. The emission characteristics of laser ablated (with different powers) samples show a strong exciton peak at 388 nm, and a few more weak peaks (due to weak defect states in the visible range). The optical absorption spectra were obtained from the excitonic peaks (from 344 nm to 317 nm) on decreasing laser power. These peaks occur due to the coupling of exciton absorption (from ZnO shell layer) and core metal interband absorption. The Zn–ZnO core-shell nanostructure is useful for nanophotonic applications.     

Characterization of ZnO nanowires grown on Si (100) with and without Au catalyst

ZnO nanowires were grown on Si (100) substrates with and without Au catalyst by chemical vapor deposition employing the vapor-liquid-solid (VLS) and vapor-solid (VS) mechanisms, respectively. The diameters of the resulting nanowires were in the range 80-150 nm with typical length about 10 μm. The near-band-edge (NBE) emission of ZnO nanowires grown with and without catalyst was observed at 382 nm and 386 nm, respectively. The intensity of the NBE emission of ZnO nanowires grown without the catalyst was higher than that of the green luminescence. By sharp contrast, the intensity of the NBE emission of ZnO nanowires grown with catalyst was lower than that of green luminescence. The X-ray diffraction (XRD) spectrum of the ZnO nanowires grown without catalyst exhibited a peak intensity of c-plane 5 times higher than that of m-plane and 10 times higher than that of a-plane. However, the XRD spectrum of the ZnO nanowires grown with catalyst exhibited a peak intensity of the c-plane about 1.5 times higher than that of the m-plane and 4 times higher than that of a-plane intensity. Thus, the ZnO nanowires grown without catalyst have a preferential orientation along the c-axis direction. Our results show that the catalyst strongly effects optical and structural properties of the ZnO nanowires.     

Light-harvesting action spectroscopy of single conjugated polymer nanowires

We study exciton migration in single molecular nanowires, dye-endcapped multichromophoric conjugated polymers, as a function of excitation energy. This approach reveals the actual molecular absorption properties, uncovering the molecules within an ensemble and the chromophores within a molecule which contribute to absorption at a given wavelength. As the excitation energy is raised, an increasing number of polymers exhibit energy transfer suggesting that, in contrast to the emission spectrum, the absorption of a single chain under energy transfer conditions can be very broad even at 5 K. At the same time, the polarization anisotropy in excitation decreases due to an increase in the number of noncolinear chromophores involved in absorption. Power and wavelength-dependent measurements clearly discern the exciton blockade effect that gives rise to strong fluctuations of energy transfer. Although the polymer and endcap constitute nominally discrete spectroscopic entities, we are able to identify a subtle influence of the primary backbone exciton energy on the ultimate endcap emission. This demonstration of interchromophoric cooperativity provides a direct realization of how nonradiative energy dissipation in one nanoscale unit influences the spectroscopy of another.     

Growth and optical properties of strained GaAs-GaxIn 1-x P core-shell nanowires

We have synthesized GaAs-Ga(x)In(1-x)P (0.34 < x < 0.69) core-shell nanowires by metal-organic vapor phase epitaxy. The nanowire core was grown Au-catalyzed at a low temperature (450 degrees C) where only little growth takes place on the side facets. The shell was added by growth at a higher temperature (600 degrees C), where the kinetic hindrance of the side facet growth is overcome. Photoluminescence measurements on individual nanowires at 5 K showed that the emission efficiency increased by 2 to 3 orders of magnitude compared to uncapped samples. Strain effects on the band gap of lattice mismatched core-shell nanowires were studied and confirmed by calculations based on deformation potential theory.     

Luminescence study on Eu(3+) doped Y(2)O(3) nanoparticles: particle size, concentration and core-shell formation effects

Nanoparticles of Eu(3+) doped Y(2)O(3) (core) and Eu(3+) doped Y(2)O(3) covered with Y(2)O(3) shell (core-shell) are prepared by urea hydrolysis for 3?h in ethylene glycol medium at a relatively low temperature of 140?°C, followed by heating at 500 and 900?°C. Particle sizes determined from x-ray diffraction and transmission electron microscopic studies are 11 and 18?nm for 500 and 900?°C heated samples respectively. Based on the luminescence studies of 500 and 900?°C heated samples, it is confirmed that there is no particle size effect on the peak positions of Eu(3+) emission, and optimum luminescence intensity is observed from the nanoparticles with a Eu(3+) concentration of 4-5?at.%. A luminescence study establishes that the Eu(3+) environment in amorphous Y (OH)(3) is different from that in crystalline Y(2)O(3). For a fixed concentration of Eu(3+) doping, there is a reduction in Eu(3+) emission intensity for core-shell nanoparticles compared to that of core nanoparticles, and this has been attributed to the concentration dilution effect. Energy transfer from the host to Eu(3+) increases with increase of crystallinity.     

Abnormal photoluminescence properties of GaN nanorods grown on Si(111) by molecular-beam epitaxy

We have studied the photoluminescence properties of GaN nanorods grown on Si(111) substrates by radio-frequency plasma-assisted molecular-beam epitaxy. The hexagonal shaped nanorods with lateral average diameters from 30 to 150?nm are obtained by controlling the Ga flux with a fixed amount of nitrogen. As the diameters decrease, the main emission lines assigned as donor bound excitons are blueshifted, causing a spectral overlap of this emission line with that of the free exciton at 10?K due to the quantum size effect in the GaN nanorods. The temperature-dependent photoluminescence spectra show an abnormal behaviour with an 'S-like' shape for higher diameter nanorods. The activation energy of the free exciton for GaN?nanorods with different diameters was also evaluated.     

Bipolar Resistive Switching of Single Gold-in-Ga(2)O(3) Nanowire

We have fabricated single nanowire chips on gold-in-Ga(2)O(3) core-shell nanowires using the electron-beam lithography techniques and realized bipolar resistive switching characteristics having invariable set and reset voltages. We attribute the unique property of invariance to the built-in conduction path of gold core. This invariance allows us to fabricate many resistive switching cells with the same operating voltage by simple depositing repetitive metal electrodes along a single nanowire. Other characteristics of these core-shell resistive switching nanowires include comparable driving electric field with other thin film and nanowire devices and a remarkable on/off ratio more than 3 orders of magnitude at a low driving voltage of 2 V. A smaller but still impressive on/off ratio of 10 can be obtained at an even lower bias of 0.2 V. These characteristics of gold-in-Ga(2)O(3) core-shell nanowires make fabrication of future high-density resistive memory devices possible.     

Variation of ZnO shell thickness and its effects on the characteristics of coaxial nanowires

We have changed the thickness of the ZnO shell layers in SiO(x)/ZnO core-shell nanowires by increasing the atomic layer deposition (ALD) cycle, using diethylzinc (DEZn) and H(2)O as precursors of Zn and O, respectively. The samples were characterized by means of x-ray diffraction (XRD), scanning electron microscopy, transmission electron microscopy, and photoluminescence (PL) spectroscopy. While the thickness of the ZnO shell layers increased almost linearly with increase of the ALD cycle, their tubular morphologies were maintained. The variation in the thickness of the ZnO shell layers was accompanied by changes in the relative intensities of the characteristic ultraviolet (UV) and visible emission bands and by a shift of the UV peak position. On the basis of the observed relationship between the XRD shell grain size and the PL shift, we suggest that the PL shift is attributable to an exciton confinement effect. The findings in this study can be applied to a wide range of materials, and are expected to contribute to the development of potential applications of coaxial nanowires.     

Tailoring the photoluminescence of ZnO nanowires using Au nanoparticles

Rational design of hybrid nanostructures through attaching nanowires with nanoparticles is an effective route to enhance the existing functionalities or to explore new ones. We carry out a systematic investigation on the photoluminescence of ZnO nanowire-Au nanoparticle hybrid nanostructures synthesized by attaching Au nanoparticles onto ZnO nanowires. Citrate-stabilized 40?nm Au nanoparticles effectively quench the green emission and enhance the UV emission of the ZnO nanowires, which is consistent with the wavelength-dependent generation of surface plasmon. The UV/green emission intensity ratio could be reversibly and reproducibly tailored by attaching/detaching Au nanoparticles. This enhancement of UV emission diminishes if the Au nanoparticles are coated with a polymer layer. We also find that the orange-red emission of the ZnO nanowires is related to the excess oxygen on the ZnO surface, and it is also tunable via annealing and surface modifications.     

ZnO纳米线的气相沉积法自催化生长及发光性能研究

介绍了一种通过气相沉积法自催化生长氧化锌纳米线的方法。氧化锌纳米线的生长方向为〈001〉,其尺寸随反应温度的升高而增大。光致发光分析表明绿光发射强度随氧化锌纳米线尺寸而变化。当氧化锌纳米线直径小至5～10nm时,由于量子效应而表现出非常强的绿光发射。     

Resonant excitation and imaging of nonequilibrium exciton spins in single core-shell GaAs-AlGaAs nanowires

Nonequilibrium spin distributions in single GaAs/AlGaAs core-shell nanowires are excited using resonant polarized excitation at 10 K. At all excitation energies, we observe strong photoluminescence polarization due to suppressed radiative recombination of excitons with dipoles aligned perpendicular to the nanowire. Excitation resonances are observed at 1- or 2-LO phonon energies above the exciton ground states. Using rate equation modeling, we show that, at the lowest energies, strongly nonequilibrium spin distributions are present and we estimate their spin relaxation rate.     

One-pot synthesis of biocompatible Te@phenol formaldehyde resin core-shell nanowires with uniform size and unique fluorescent properties by a synergized soft-hard template process

One-pot hydrothermal process has been developed to synthesize uniform Te@phenol formaldehyde resin core-shell nanowires with unique fluorescent properties. A synergistic soft-hard template mechanism has been proposed to explain the formation of the core-shell nanowires. The Te@phenol formaldehyde resin core-shell nanowires display unique fluorescent properties, which give strong luminescent emission in the blue-violet and green regions with excitation wavelengths of 270 nm and 402 nm, respectively.     

Stability of hydrogen incorporated in ZnO nanowires by plasma treatment

The stability of hydrogen in ZnO is studied using hydrogenated nanowires by plasma treatment. Enhanced near band edge UV emission and reduced defect level green emission is observed after hydrogen plasma treatment. Through thermal stability tests, this effect is found to be stable at room temperature and nearly stable up to ~500 K, but begins to deteriorate at higher temperature. The study of the irradiation stability of the hydrogen in ZnO nanowires shows that the hydrogen is stable under an electron beam with an accelerating voltage lower than 5 kV, but is not stable under 10 kV or under an intensive laser beam. The results could benefit the further understanding of the role of hydrogen in ZnO and light-emitting devices based on hydrogenated ZnO.     

Scintillation Properties of 6LiI(Eu) in Cryogenic Temperatures

We measured emission wavelength spectra, scintillation decay time and scintillation light yield of ⁶LiI(Eu) in the temperature range from 4.2?K to 300?K. We observed that the scintillation decay time was almost constant (1.3?μs) below 100?K. At 4.2?K the light yield was found to increase to 6 times higher than that at 300?K. The ⁶LiI(Eu) is expected to be utilized for spectroscopic measurement of fast neutrons by operating at 4.2?K.     

A cathodoluminescence study of the influence of the seed particle preparation method on the optical properties of GaAs nanowires

Cathodoluminescence at 8?K is used to compare the optical properties of AlGaAs-capped GaAs nanowires, grown by metal-organic vapour phase epitaxy and seeded by gold particles prepared by different methods. Six different methods were used to fabricate and deposit gold seed particles onto GaAs substrates: colloid particles, aerosol particles and particles defined by electron beam lithography. The nanowires were grown with and without an in?situ annealing step prior to the nanowire growth. The morphology showed no significant differences between the nanowires. The emissions from ensembles of nanowires have the same peak position, irrespective of seed particle type. Without the in?situ annealing step prior to the nanowire growth, there are significant differences in the emission intensity and emission patterns from nanowires grown from different seed particles. When an in?situ annealing step is included, all the resulting nanowires show identical optical emission intensity and emission patterns. This shows the importance of using an in?situ annealing step prior to growth. This study demonstrates that different preparation methods for gold seed particles can be used to produce GaAs nanowires with highly similar optical properties. The choice of particle preparation method to be used can therefore be based on availability and cost.     

Role of confinement on carrier transport in Ge-Si(x)Ge(1-x) core-shell nanowires

We examine the impact of shell content and the associated hole confinement on carrier transport in Ge-Si(x)Ge(1-x) core-shell nanowires (NWs). Using NWs with different Si(x)Ge(1-x) shell compositions (x = 0.5 and 0.7), we fabricate NW field-effect transistors (FETs) with highly doped source/drain and examine their characteristics dependence on shell content. The results demonstrate a 2-fold higher mobility at room temperature, and a 3-fold higher mobility at 77K in the NW FETs with higher (x = 0.7) Si shell content by comparison to those with lower (x = 0.5) Si shell content. Moreover, the carrier mobility shows a stronger temperature dependence in Ge-Si(x)Ge(1-x) core-shell NWs with high Si content, indicating a reduced charge impurity scattering. The results establish that carrier confinement plays a key role in realizing high mobility core-shell NW FETs.