High-Temperature Strength of Liquid-Phase-Sintered SiC with AlN and Re2O3 (RE = Y, Yb)

Using AlN and RE₂O₃ (RE = Y, Yb) as sintering additives, two different SiC ceramics with high strength at 1500°C were fabricated by hot-pressing and subsequent annealing under pressure. The ceramics had a self-reinforced microstructure consisting of elongated α-SiC grains and a grain-boundary glassy phase. High-temperature strength up to 1600°C was measured and compared with that of the SiC ceramics fabricated with AlN and Er₂O₃. SiC ceramics with AlN and Y₂O₃ showed the best strength (∼630 MPa) at 1500°C, while SiC ceramics with AlN and Er₂O₃ the best strength (∼550 MPa) at 1600°C.     

Hot-Pressed Silicon Nitride with Lu2O3 Additives: Oxidation and Its Effect on Strength

The oxidation behavior and effect of oxidation on room-temperature flexural strength were investigated for hot-pressed Si₃N₄ ceramics, with 3.33 and 12.51 wt% Lu₂O₃ additives, exposed to air at 1400° and 1500°C for up to 200 h. Parabolic oxidation behavior was observed for both compositions. The oxidation products consisted of Lu₂Si₂O₇ and SiO₂. The Lu₂Si₂O₇ grew out of the surface silicate in preferred orientations. The morphology of oxidized surfaces was dependent on the amount of additive; Lu₂Si₂O₇ grains in the 3.33 wt% composition appeared partially in a needlelike type, compared with a more equiaxed type exhibited in the 12.51 wt% case. The high resistance to oxidation shown for both compositions was attributed to the extensive amounts of crystalline, refractory secondary phases formed during the sintering process. Moreover, after 200 h of oxidation at 1400° and 1500°C, the strength retention displayed by the two compositions was 93%–95% and 85%–87%, respectively. The strength decrease was associated with the formation of new defects at the interface between the oxide layer and the Si₃N₄ bulk.     

Reactivity of Aluminum Nitride Powder in Aqueous Silicon Nitride and Silicon Carbide Slurries

The reactivity of AlN powder with water in supernatants obtained from centrifuged Si₃N₄ and SiC slurries was studied by monitoring the pH versus time. Various Si₃N₄ and SiC powders were used, which were fabricated by different production routes and had surfaces oxidized to different degrees. The reactivity of the AlN powder in the supernatants was found to depend strongly on the concentration of dissolved silica in these slurries relative to the surface area of the AlN powder in the slurry. The hydrolysis of AlN did not occur if the concentration of dissolved silica, with respect to the AlN powder surface, was high enough (1 mg SiO₂/(m² AlN powder)) to form a layer of aluminosilicates on the AlN powder surface. This assumption was verified by measuring the pH of more concentrated (31 vol%) Si₃N₄ and SiC suspensions also including 5 wt% of AlN powder (with respect to the solids).     

Gas Pressure Sintering of Silicon Nitride Powder Coated with Al2O3 and TiO2

Gas pressure sintering kinetics of silicon nitride powder coated with 10 wt% (9:1) Al₂O₃ and TiO₂ have been studied at 1850°C with a pressure schedule of 0.3 MPa in the first stage and 1 MPa in the second stage. The rates have been analyzed with a liquid-phase sintering model. Diffusion-controlled intermediate-stage kinetics have been observed. The role of second-step pressurization with nitrogen and argon has been determined by monitoring the kinetics. Pressurization at an earlier stage (∼90% relative density) reduces the densification rate but produces a denser material at the final stage. Although final density is greater, a porous surface layer forms on samples sintered with argon pressurization at the second stage. No such porous layer is formed in the case of pressurization with nitrogen. The mechanism of the intermediate-stage kinetics has been discussed with respect to the nature of the product analyzed by XRD after sintering.     

Some New Perspectives on Oxidation of Silicon Carbide and Silicon Nitride

This study provides new perspectives on why the oxidation rates of silicon carbide and silicon nitride are lower than those of silicon and on the conditions under which gas bubbles can form on them. The effects on oxidation of various rate-limiting steps are evaluated by considering the partial pressure gradients of various species, such as O₂, CO, and N₂. Also calculated are the parabolic rate constants for the situations when the rates are controlled by oxygen and/or carbon monoxide (or nitrogen) diffusion. These considerations indicate that the oxidation of silicon carbide and silicon nitride should be mixed controlled, influenced both by an interface reaction and diffusion.     

Heat-Resistant Silicon Carbide with Aluminum Nitride and Erbium Oxide

Fully dense SiC ceramics with high strength at high temperature were obtained by hot-pressing and subsequent annealing under pressure, with AlN and Er₂O₃ as sintering additives. The ceramics had a self-reinforced microstructure consisting of elongated SiC grains and a grain-boundary glassy phase. The strength of these ceramics was ∼550 MPa at 1600°C, and the fracture toughness was ∼6 MPa·m^1/2 at room temperature. The beneficial effect of the new additive composition on high-temperature strength might be attributable to the introduction of aluminum from the liquid composition into the SiC lattice, resulting in a refractive grain-boundary glassy phase.     

Preparation of Silicon Carbide/Aluminum Nitride Ceramics Using Organometallic Precursors

Solid solutions of 2H -SiC/AlN can be prepared at temperatures less than 1600°C by rapid pyrolysis ("hot drop") of mixtures of [(Me₃Si)_0.80((CH₂=CH)MeSi)_1.0(MeHSi)_0.35] _n (VPS) or [MeHSiCH₂] _n (MPCS) with [R₂AlNH₂]₃, where R=Et, i -Bu or simply by slow pyrolysis of the precursor mixture in the case of [Et₂AlNH₂]₃. In contrast, slow pyrolysis of mixtures of VPS or MPCS with [ i -Bu₂AlNH₂]₃ yields a composite of 2 H -AlN and 3 C -SiC at 1600°C, which transforms into a single 2 H -SiC/AlN solid solution on heating to 2000°C. The influences of the nature of the precursor and processing conditions on the structure, composition, and purity of the SiC/AlN materials are discussed.     

Improved Oxidation Resistance of Silicon Nitride by Aluminum Implantation: II, Analysis and Optimization

In the preceding paper, it was shown that aluminum ion implantation significantly improves the oxidation resistance of Si₃N₄ ceramics under the influence of sodium. Not only is the oxidation rate reduced by up to an order of magnitude, the phase and morphological characteristics of the oxides grown on aluminum-implanted samples are improved as well. The role of aluminum in negating the detrimental effect of sodium on the oxidation resistance of Si₃N₄ ceramics can be interpreted on the basis of network modification of the oxide layers by sodium and aluminum cations. The degree of improvement in the oxidation resistance does not, however, necessarily increase with the aluminum concentration. A simple quantitative analysis is presented which correlates the optimum aluminum implant concentration and the sodium content in the gas phase for the optimization of the oxidation resistance of Si₃N₄ ceramics.     

Volatility Diagrams for Silica, Silicon Nitride, and Silicon Carbide and Their Application to High-Temperature Decomposition and Oxidation

Volatility diagrams—isothermal plots showing the partial pressures of two gaseous species in equilibrium with the several condensed phases possible in a system—are discussed for the Si-O and Si-N systems, and extended to the Si-N-O and Si-C-O systems, in which the important ceramic constituents SiO₂, Si₃N₄, Si₂N₂O, and SiC appear as stable phases. Their use in understanding the passiveactive oxidation transitions for Si, Si₃N₄, and SiC are demonstrated.     

Improved Oxidation Resistance of Silicon Nitride by Aluminum Implantation: I, Kinetics and Oxide Characteristics

Hot-isostatically-pressed, additive-free Si₃N₄ ceramics were implanted with aluminum at multi-energies and multidoses to achieve uniform implant concentrations at 1, 5, and 10 at.% to a depth of about 200 nm. The oxidation behavior of unimplanted and aluminum-implanted Si₃N₄ samples was investigated in 1 atm flowing oxygen entrained with 100 and 220 ppm NaNO₃ vapor at 900–1100°C. Unimplanted Si₃N₄ exhibits a rapid, linear oxidation rate with an apparent activation energy of about 70 kJ/mol, independent of the sodium content in the gas phase. Oxides formed on the unimplanted samples are rough and are populated with cracks and pores. In contrast, aluminum-implanted Si₃N₄ shows a significantly reduced, parabolic oxidation rate with apparent activation energies in the range of 90–140 kJ/mol, depending on the sodium content as well as the implant concentration. The oxides formed on the implanted samples are glassy and mostly free from surface flaws. The alteration of the oxidation kinetics and mechanism of Si₃N₄ in a sodium-containing environment by aluminum implantation is a consequence of the effective modification of the properties of the sodium silicates through aluminum incorporation.     

Microstructure and Short-Term Oxidation of Hot-Pressed Si3N4/ZrO2(+Y2O3) Ceramics

Composite ceramic materials based on Si₃N₄ and ZrO₂ stabilized by 3 mol% Y₂O₃ have been formed using aluminum isopropoxide as a precursor for the Al₂O₃ sintering aid. Densification was carred out by hot-pressing at temperatures in the range 1650° to 1800°C, and the resulting micro-structures were related to mechanical properties as well as to oxidation behavior at 1200°C. Densification at the higher temperatures resulted in a fibrous morphology of the Si₃N₄ matrix with consequent high room-temperature toughness and strength. Decomposition of the ZrO₂ grains below the oxidized surface during oxidation introduced radial stresses in the subscalar region, and from the oxidation experiments it is suggested that the ZrO₂ incorporated some N during densification.     

Elastic Properties of Al2O3 and Si3N4 Matrix Composites with SiC Whisker Reinforcement

A study of the elastic moduli of Al₂O₃ and Si₃N₄ ceramics reinforced with 0 to 25 wt% SiC whiskers has been performed. The Young's moduli, shear moduli, and longitudinal modulus are compared with calculated predictions for aligned fiber composites by Hill and Hashin and Rosen, and for fibers randomly oriented in three dimensions by Christensen and Waal. The measured values are in excellent quantitative agreement with those derived for the random orientation of the SiC whiskers.     

Characterization of Gold—Aluminum Nitride and Gold—Silicon Carbide Interfaces

Aluminum nitride and silicon carbide substrates were screen-printed with fritless gold and fired at 850°C in air. Interfacial diffusion zones up to 7 αm thick were observed, in which the concentrations of Au, Na impurities, and combined O varied together. Secondary ion mass and photoelectron spectroscopy revealed oxidized Al in the gold conductor supported by AIN. It is suggested that enhanced oxidation accompanies the diffusion of Au into the ceramics.     

Change in Oxygen Content of Y2O3-Nd2O3-Doped Silicon Nitride During Firing

The oxygen content of silicon nitride with 1 mol% Y₂O₃—Nd₂O₃ additive was measured after firing to determine the compositional change during gas-pressure sintering. Oxygen content decreases from 2.5 to 0.94 wt% during firing for 4 h at 1900°C and 10-MPa pressure in N₂. This decrease in oxygen results from the release of SiO gas generated by a thermaldecomposition reaction between Si₃N₄ and SiO₂. The resultant sintered silicon nitride material contains less than 1 wt% oxygen.     

Effect of Dynamic Microstructural Change on Deformation Behavior in Liquid-Phase-Sintered Silicon Carbide with Al2O3–Y2O3–CaO Additions

Nanocrystalline β-SiC with additions of 7 wt% Al₂O₃, 2 wt% Y₂O₃, and 1 wt% CaO was subjected to tensile deformation to study its microstructural behavior under the dynamic process. The liquid-phase-sintered body had a relative density of >97% and an average grain size of 170 nm. Tension tests were conducted at initial strain rates ranging from 2 × 10⁻⁵ to 5 × 10⁻⁴ s⁻¹, in the temperature range 1973–2023 K, in both argon and N₂ atmospheres. Although grain-boundary liquids formed by the additions vaporized concurrently with the decomposition of SiC and extensive grain growth, the maximum tensile elongation of 48% was achieved in argon. Annealing experiments under the same conditions revealed that vaporization and grain growth were both dependent on experimental time. Therefore, high strain rates suffered less from the hardening effect when cavitation damage was more severe. Testing in an N₂ atmosphere brought about crystallization of the grain-boundary phase and prevented severe vaporization; however, fracture occurred at only 8% elongation. Grain-boundary sliding was still the dominant mechanism for deformation.     

Mechanical Property and Oxidation Behavior of Self-Reinforced Si3N4 Doped with Re2O3 (Re=Yb, Lu)

In this work, self-reinforced silicon nitrides with β-Si₃N₄ seeds doped with Re₂O₃ (Re=Yb, Lu) were investigated. Firstly, the two kinds of seeds were obtained by heating α-Si₃N₄ powder with Yb₂O₃ or Lu₂O₃, respectively. Then the self-reinforced silicon nitride ceramics were prepared by HP-sintering of α-Si₃N₄ powder, Re₂O₃ as additive, and the as-prepared seeds. Oxidation test was carried out at 1400°C in air for 100 h with thermogravimetry analysis (TGA) measurement. Mechanical properties, scanning electronic microscopy microstructures, and X-ray diffraction patterns were measured before and after oxidation. The results indicated that the introduction of the seeds doped with Re₂O₃ (Re=Yb, Lu) could obviously increase the toughness and keep the room temperature and high-temperature strength of the ceramics at high values. After oxidation, the crystalline phase in grain boundary changed and the mechanical properties decreased. TGA showed a parabolic weight gain and the oxidation mechanism was discussed.     

Mechanical Properties and Oxidation Behavior of Al2O3–AlN–TiN Composites

The study examines the effect which the composition of hot-pressed electroconductive ceramics has on their structure, mechanical properties, and oxidation behavior, for ceramics of the type AIN–Al₂O₃–42 wt% TiN, differing in the AIN/Al₂O₃ ratio. The results are physico-mechanical property data, including density, hardness, strength, fracture toughness, and wear resistance. A correlation was found between the wear resistance and fracture toughness. The analysis of oxidation products revealed the formation of α-Al₂O₃ and rutile in the temperature range from 600° to 1100°C and aluminum titanate above 1200°C. The spallation of the oxide layer caused low oxidation resistance of Al₂O₃-rich composites above 1250°C. The oxidation of composites was compared with the oxidation of pure TiN. The relationship is discussed between material properties, composition, phases, and processing parameters.     

Evidence for Bulk Residual Stress Strengthening in Al2O3/SiC Nanocomposites

The fracture behavior of Al₂O₃/SiC nanocomposites has been studied as a function of the SiC volume fraction and compared to that of the pure Al₂O₃ matrix. A pronounced strengthening effect was only observed for materials with low SiC content (i.e., ≤10 vol%) although no evidence of concurrent toughening was found. Assessment of near-tip crack opening displacement (COD) could not experimentally substantiate significant occurrence of an elastic crack-bridging mechanism, in contrast with a recently proposed literature model. Quantitative fractography analysis indicated that transgranular crack propagation in Al₂O₃/SiC nanocomposites depends on the location of the SiC dispersoids within the matrix texture; the higher the fraction of transgranularly located dispersoids, the more transgranular the fracture mode. Experimental evidence of remarkably high residual stresses arising from thermal dilatation mismatch (upon cooling) between Al₂O₃ and SiC phases were obtained by fluorescence and Raman spectroscopy. A strengthening mechanism is invoked which merely arises from residual stress through strengthening of Al₂O₃ grain boundaries.     

Oxidation Effects on the Mechanical Properties of a SiC-Fiber-Reinforced Reaction-Bonded Si3N4 Matrix Composite

The room-temperature mechanical properties of a SiC-fiberreinforced reaction-bonded silicon nitride composite were measured after 100 h treatment in nitrogen and oxygen environments to 1400°C. The composite heat-treated in nitrogen to 1400°C showed no appreciable loss in properties. In contrast, composites heat-treated in oxygen from 600° to 1000°C retained ∼65% and 35% of the matrix fracture and ultimate strength, respectively, of the as-fabricated composites, and those heat-treated from 1200° to 1400°C retained greater than 90% and 65% of the matrix fracture and ultimate strength, respectively, of the as-fabricated composites. For all nitrogen and oxygen treatments, the composite displayed strain capability beyond the matrix fracture strength. Oxidation of the fiber surface coating, which caused degradation of bond between the fiber and matrix and reduction in fiber strength, appears to be the dominant mechanism for property degradation of the composites oxidized from 600° to 1000°C. Formation of a protective silica coating at external surfaces of the composites at and above 1200°C reduced oxidation of the fiber coating and hence degrading effects of oxidation on their properties.     

High-Temperature Active Oxidation of Chemically Vapor-Deposited Silicon Carbide in an Ar─O2 Atmosphere

Active oxidation behavior of chemically vapor-deposited silicon carbide in an Ar─O₂ atmosphere at 0.1 MPa was examined in the temperature range between 1840 and 1923 K. The transition from active oxidation (mass loss) to passive oxidation (mass gain) was observed at certain distinct oxygen partial pressures ( P _O2^t). The values of P _O2^t increased with increasing temperature and with decreasing total gas flow rates. This behavior was well explained by Wagner's model and thermodynamic calculations. Active oxidation rates ( k _a) increased with increasing O₂ partial pressures and total gas flow rates. The rate-controlling step of the active oxidation was concluded to be O₂ diffusion through the gaseous boundary layer.