12位10MS／sCMOS流水线A／D转换器的设计

文中介绍了一种六级12位10Msample/s CMOS流水线A/D转换器的设计。该设计方案采用了双差分动态比较器结构,保证了处理模拟信号的精度与速度;采用冗余编码技术,进行数字误差校正,减小了多种误差敏感性,避免了由于余量电压超限而导致的失码,并降低了采样/保持电路和D/A转换电路的设计难度。     

低功耗10位30MS/s流水线A/D转换器

基于0.18μm CMOS混合信号工艺,设计了一个低功耗10位30 MS/s流水线A/D转换器.通过优化各级采样电容和运放(0TA)偏置电流,以及使用动态比较器,大大降低了整体功耗.采用增益自举开关,以减少开关非线性;引入数字校正技术,以提高转换精度.当采样时钟频率为32 MHz、输入信号频率为16 MHz时,信噪失真比(SNDR)为59 Db,无杂散动态范围(SFDR)为71 Db.AD(:核心电路版图面积为0.64 mm2,功耗仅为32 Mw.     

一种3.3 V 9位50 MS/s CMOS流水线A/D转换器

设计了一种3.3 V 9位50 MS/s CMOS流水线A/D转换器。该A/D转换器电路采用1.5位/级,8级流水线结构。相邻级交替工作,各级产生的数据汇总至数字纠错电路,经数字纠错电路输出9位数字值。仿真结果表明,A/D转换器的输出有效位数(ENOB)为8.712位,信噪比(SNR)为54.624 dB,INL小于1 LSB,DNL小于0.6 LSB,芯片面积0.37 mm2,功耗仅为82 mW。     

一种12位50MS/s CMOS流水线A/D转换器

采用TSMC 0.18μm 1P6M工艺设计了一个12位50 MS/s流水线A/D转换器（ADC）。为了减小失真和降低功耗,该ADC利用余量增益放大电路（MDAC）内建的采样保持功能,去掉了传统的前端采样保持电路;采用时间常数匹配技术,保证输入高频信号时,ADC依然能有较好的线性度;利用数字校正电路降低了ADC对比较器失调的敏感性。使用Cadence Spectre对电路进行仿真。结果表明,输入耐奎斯特频率的信号时,电路SNDR达到72.19 dB,SFDR达到88.23 dB。当输入频率为50 MHz的信号时,SFDR依然有80.51 dB。使用1.8 V电源电压供电,在50 MHz采样率下,ADC功耗为128 mW。     

一种10位50 MSPS CMOS流水线A/D转换器

介绍了一种CMOS流水线结构高速高精度A／D转换器，该器件具有50MHz工作频率和10位分辨率。设计采用双采样技术，提高了有效采样率；由于运用了冗余数字校正技术，可以采用低功耗的动态比较器。对转换器的单元结构进行了优化，并对主要电路进行了分析。     

14位20 MS/s CMOS流水线A/D转换器

介绍了一种14位20 MS/s CMOS流水线结构A/D转换器的设计.采用以内建晶体管失配设置阈值电压的差分动态比较器,省去了1.5位流水线结构所需的±0.25 VR两个参考电平;采用折叠增益自举运算放大器,获得了98 dB的增益和900 MHz的单位增益带宽,基本消除了运放有限增益误差的影响;采用冗余编码和数字校正技术,降低了对比较器失调的敏感性,避免了余差电压超限引起的误差.电路采用0.18 μm CMOS工艺,3.3 V电源电压.仿真中,对频率1 MHz、峰值1 V的正弦输入信号的转换结果为:SNDR 85.6 dB,ENOB 13.92位,SFDR 96.3 dB.     

A/D转换器中的CMOS自稳零电压比较器的设计

本文介绍了一种CMOS自稳零电压比较器的设计。该比较器具有高精度,高灵敏度和较快的速度,其工艺条件及参数与数字电路兼容。文章通过电路设计特点说明其工作原理。对其中的差值电路的设计,特别是放大器的设计,作了具体分析。该比较器完全满足了CM0808八位A/D转换器的要求。     

一种2.5 V 1-MS/s 12位逐次逼近A/D转换器

设计了一种低功耗、中速中精度的单端输入逐次逼近A/D转换器,用于微处理器外围接口。其D/A转换器采用分段电容阵列结构,有利于版图匹配,节省了芯片面积;比较器使用三级前置放大器加锁存器的多级结构,应用了失调校准技术;控制电路协调模拟电路完成逐次逼近的工作过程,并且可以控制整个芯片进入下电模式。整个芯片使用UMC 0.18μm混合模式CMOS工艺设计制造,芯片面积1 400μm×1 030μm。仿真结果显示,设计的逐次逼近A/D转换器可以在2.5 V电压下达到12位精度和1 MS/s采样速率,模拟部分功耗仅为1 mW。     

一种高线性度14位40 MS/s流水线A/D转换器

设计了一个14位40 MHz、100 dB SFDR、1.8 V电源电压的流水线A/D转换器(ADC).采用增益自举密勒补偿两级运放,可在保证2 Vpp差分输出信号摆幅的前提下获得130dB的增益,有效地减小了运放有限增益的影响;同时,采用冗余位编码技术和动态比较器,降低了比较器失调电压的设计难度和功耗.该设计采用UMC 0.18 μm CMOS工艺,芯片面积为2mm×4 mm.仿真结果为:输入满幅单频9 MHz的正弦信号,可以达到100 dB SFDR和83.8 dBSNDR.     

99.1 mW 12位40 MSPS流水线A/D转换器

设计并实现了一种12位40 MSPS流水线A/D转换器,并在0.18 μm HJTC CMOS工艺下流片.芯片工作电压为3.3 V,核心部分功耗为99.1 mW.为优化ADC功耗,采用多位/级的系统结构和套筒式运放结构,并采用逐级按比例缩小的设计方法进一步节省功耗.测试结果表明,A/D转换器的DNL小于0.46 LSB,INL小于0.86 LSB;采样率为40 MSPS时,输入19.1 MHz信号,SFDR超过80 dB,SNDR超过65 dB.     

一种57.6mW,10位,50MS/s流水线操作CMOS A/D转换器

在1.8V,0.18μm CMOS工艺下,实现了10位,50MS/s流水线操作A/D转换器的设计和测试.通过优化采样电容和运算跨导放大器(OTA)电流,并采用动态比较器,从而降低功耗;采用复位结构的采样/保持和余量增益电路消除OTA失调电压的影响;优化OTA的次极点,保证其工作稳定.测试结果表明:ADC在整个量化范围内无失码,功耗为57.6mW,失调电压为0.8mV,微分非线性为-0.6～0.7LSB.对5.1MHz的输入信号量化,可获得44.9dB的信号与噪声及谐波失真比.电路面积为0.52mm2.     

一种57.6mW,10位,50MS/s流水线操作CMOS A/D转换器

在1.8V,0.18μm CMOS工艺下,实现了10位,50MS/s流水线操作A/D转换器的设计和测试.通过优化采样电容和运算跨导放大器(OTA)电流,并采用动态比较器,从而降低功耗;采用复位结构的采样/保持和余量增益电路消除OTA失调电压的影响;优化OTA的次极点,保证其工作稳定.测试结果表明:ADC在整个量化范围内无失码,功耗为57.6mW,失调电压为0.8mV,微分非线性为-0.6～0.7LSB.对5.1MHz的输入信号量化,可获得44.9dB的信号与噪声及谐波失真比.电路面积为0.52mm2.     

一种8位 76 mW 167 Msample/s流水插值A/D转换器

实现了一种适合手持式设备应用的8 bit模数(A/D)转换器,该A/D转换器采用了2级电容插值和斩波放大技术以降低正常工作模式功耗,流水放大和预平衡比较器技术有效地提高了采样频率.测试结果表明,该流水插值A/D转换器的微分非线性(DNL)和积分非线性(INL)分别为-1～1.63LSB和-1.66～2.05LSB,其总谐波失真(THD)、去除寄生动态范围(SFDR)和信噪加失真比(SNDR)分别为-43 dB、54 dB和36.7 dB,正常工作模式和等待模式功耗分别为76 mW和5 mW.该芯片采用中芯国际(SMIC)0.18 μm单层多晶六层金属混合CMOS工艺,芯片面积为1269 μm×885 μm.     

A 12-b 5-Msample/s two-step CMOS A/D converter

Two-step flash architectures are an effective means of realizing high-speed high-resolution analog-to-digital converters (ADCs) because they can be implemented without the need for operational amplifiers having either high gain or a large output swing. Moreover, with conversion rates approaching half those of fully parallel designs, such half-flash architectures provide both a relatively small input capacitance and low power dissipation. The authors describe the design of a 12-b 5-Msample/s A/D converter that is based on a two-step flash topology and has been integrated in a 1-μm CMOS technology. Configured as a fully differential circuit, the converter performs a 7-b coarse flash conversion followed by a 6-b fine flash conversion. Both analog and digital error correction are used to achieve a resolution of 12 b. The converter dissipates only 200 mW from a single 5-V supply and occupies an area of 2.5 mm × 3.7 mm     

A 10-b, 100-MS/s CMOS A/D converter

A new architecture for a CMOS A/D converter overcomes many of the known problems in the parallel operation of multiple pipelined stages. The input signal is sampled in one channel, and after quantization to 4 b, the residue is distributed into many channels. A prototype implemented in 1-μm CMOS achieves 60 dB signal-to-noise plus distortion ratio (SNDR) at low conversion rates, with a resolution bandwidth of greater than 20 MHz. The SNDR drops by 3 dB at a 95 MHz conversion rate, and the bandwidth remains the same     

A 12-b, 150 MHz Sample/s CMOS Current Steering D/A Converter with Gradient Error Compensation

This paper discusses a circuit of 12-b, 150 MHz Sample/s current steering DAC with hierarchical symmetrical switching sequences which will compensate gradient error. The circuit of 12-b DAC employs segmented architecture, the least significant bits (LSB's) steer a binary weighted array, while the most significant bits (MSB's) are thermometer decoded and steer a unary array. The measured differential nonlinearity and integral nonlinearity are ± 0.6 least significant bit (LSB) and ±0.9 LSB, respectively. The output spectrum of the DAC is −63 dB with an input frequency of 30 MHz at 150 MHz conversion rate. The circuit is fabricated in 0.5 μ μm, two-poly two-metal, 5.0 V, mixed-signal CMOS process and occupies 1.27 × 0.96 mm, when operating at 150 MHz Sample/s, it dissipates 91.6 mW from 5.0 V power supply which is much lower than those of [1]. Jinguang Jiang received the M.Sc. degree from Hunan University, Hunan, China, in 1998 and the PhD degree from Hunan University, Hunan, China, in 2003, all in Electrical Engineering. He is currently a Postdoctoral fellow of Control Science and Engineering in the Faculty of Electrical and Information Engineering at the University of Hunan. His interests are mode distinguish and intelligent system, intelligent signal process, low-power and low-voltage analog integrated circuits design. Bo Wang received the M.Sc. degree from Southeast University, China, in 1998. He is currently as a senior analog design engineer working at Caretta Integrated Circuits, Shanghai, China. His interests are high-speed analog IC design and analog system modeling and analysis. Yaonan Wang received the M.Sc. degree from Hunan University, Hunan, China, in 1991 and the Ph.D. degree from Hunan University, Hunan, China, in 1994, all in Control Theory and Control Engineering. He is currently a Professor and dean of school of Electrical and Information Engineering at the University of Hunan. He is engaged in research of intelligent control, intelligent signal process, image distinguish and its application.     

A Fully Integrated Current-Steering 10-b CMOS D/A Converter with a Self-Calibrated Current Bias Circuit

A fully integrated current-steering 10-b CMOS Digital-to-Analog Converter with internal termination resistors is presented. In order to improve the device-mismatching problem of internal termination resistors, a self-calibrated current bias circuit is designed. With the self-calibrated current bias circuit, the gain error of the output voltage swing is reduced within 0.5%. For the purpose of reducing glitch noises, further, a novel current switch based on a deglitching circuit is proposed. The prototype circuit has been fabricated with a 3 V 0.35 μm 2-poly 3-metal CMOS technology, and it occupies 1350 × 750 μm silicon area with 45 mW power consumption. The measured INL and DNL are within 0.5 LSB, respectively. The measured SFDR is about 65 dB, when an input signal is about 8 MHz at 100 MHz clock frequency.