MEMS磁芯螺线管微电感的制作工艺研究

采用微机电系统(MEMS)技术制作了磁芯螺线管微电感,该技术包括UV-LIGA、干法刻蚀技术、抛光和电镀技术等。研制的微电感大小为1500μm×900μm×100μm,线圈匝数为41匝,宽度为20μm,线圈之间的间隙为20μm,高深宽比为5∶1。测试结果表明:在1～10MHz频率下,其电感量为0.408～0.326μH,Q值为1.6～4.2。     

纳米晶磁芯螺线管微电感的模拟研究

为了研制小尺寸、高性能的片上微电感,采用Fe基非晶薄带经退火得到的纳米晶带材作为磁芯材料,并对其高频磁导率进行了测试。对纳米晶磁芯螺线管微电感建立了物理模型,模拟分析了结构参数对微电感性能的影响。结果表明:在1~10MHz频率范围内,所设计的微电感的电感量L在2~12μH,品质因数Q值在1.3~2.3,非常适用于DC-DC变换器等功率电子器件。     

基于闭合磁路的框式薄膜电感的研究

通过磁控溅射工艺制备出三种框式薄膜电感,其中特殊磁芯电感、全磁膜电感为设计制作的具有闭合磁性回路的特殊薄膜电感,而三文治结构电感是目前流行的薄膜电感,这些电感均由下层磁芯层、下层绝缘层(聚偏二氯乙烯,厚度约为40μm)、线圈和线圈中心的磁膜、上层绝缘层和上层磁芯层组成,其差别在于磁芯结构不同。在1~3 MHz频率范围内,比较了三种电感的等效电感、寄生电容和损耗因子。结果表明:与三文治结构电感和全磁膜电感相比,特殊磁芯电感有较高的等效电感量和较小的寄生电容,但损耗较后两者高。     

隐埋电感工艺的开发与研究

通过蚀刻铜箔结合导通孔连接的方法在四层PCB中制得了大小从120 nH到1 400 nH的三维螺旋隐埋电感,品质因数分别为6～31(测量频率为1 MHz)。所制得隐埋电感既包括垂直轴线,也包括水平轴线三维螺旋隐埋电感线圈;既包括平面螺旋电感和三维螺旋线圈,又包括两者的复合。另外通过对比研究不同物理参数对垂直轴线三维隐埋电感的影响,结果发现在相同周长的情况下,圆形电感略优于方形电感;电感大小和线圈的面积及圈数成正比,与线圈间距成反比;品质因数随着线圈的面积、圈数和线圈间距的变化而略有变化。     

双层悬空结构片状微电感研究

利用MEMS工艺制作了一种双层悬空结构的圆形片状微电感，并研究了其在S波段的性能。双层微电感的底层线圈制作在玻璃衬底平面上，外径为500μm，匝数为2，导线宽度70μm，导线间距15μm，顶层线圈的悬空高度为20μm，顶层线圈的匝数为1．5，其它结构参数与底层线圈相同。研究表明，所制作的双层结构微电感在2GHz～4GHz时其电感量达到2．2nH，其品质因数达到22。在制作过程中首次引入的光刻胶抛光工艺大大简化了微电感的制作过程。     

一种新型磁芯螺线管微电感的设计与优化

利用HFSS仿真软件对一种基于电感耦合的新型磁芯螺线管微电感进行设计,并优化得出其结构参数,该电感尺寸为7 mm×6.6 mm×0.44 mm。利用Agilent E4294A射频阻抗/材料分析仪对微机电系统(MEMS)工艺实现的该新型螺线管微电感进行了性能测试分析。测试结果表明：该电感在1 MHz~20 MHz频率范围内保持较高的电感值和品质因数Q,测试结果与仿真结果较好的吻合,电感值是相同几何结构参数下空心电感的16倍以上,在10 MHz频率时,微电感的电感值为1.17μH,Q值达到50。     

采用MEMS技术制作的螺线管电感

采用微机电系统技术制作了螺线管电感.为了获得高电感量和Q值,采用UV-LIGA、干法刻蚀、抛光和电镀技术,研制的电感大小为1500μm×900μm×70μm,线圈匝数为41匝,宽度为20μm,线圈之间的间隙为20μm,高深宽比为3.5:1.测试结果表明电感量最大值为6.17nH,Q值约为6.     

热处理温度对CoTaZr薄膜磁芯电感性能的影响

通过不同温度的热处理来改变磁控溅射法沉积的CoTaZr薄膜的组织结构,研究了热处理温度对薄膜微观结构及磁电性能的影响,并将这些薄膜作为电感磁芯,研究其热处理温度对电感低频段(频率范围为0~3 MHz)性能的影响。结果表明,镀膜态薄膜呈非晶态,随热处理温度的升高,薄膜晶化逐渐明显,其电阻率逐渐降低;150℃和300℃热处理均有利于提高薄膜的饱和磁化强度Ms以及薄膜电感的电感量L,150℃热处理可提高薄膜电感的品质因数Q,所以最佳的热处理温度为150℃。     

一种适用于多波段无线通信的品质因数增强型的CMOS射频滤波器

提出了一种使用品质因数增强型的有源电感的射频带通滤波器,描述了在宽射频频段上可调谐的品质因数增强型的有源电感设计技术,而且解释了与有源电感噪声和稳定性相关的问题.该滤波器采用0.18μm CMOS工艺制造,它所占用芯片的有效面积仅为150μm×200μm.测试结果表明:该射频滤波器中心频率为2.44GHz时,3dB带宽为60MHz,中心频率可在2.07～2.44GHz范围内调谐,1dB压缩点为-15dBm,而静态功耗为10.8mW;在中心频率为2.07GHz时,滤波器的品质因数可达到103.     

Pulse推出系列表面贴装鼓形磁芯功率电感

Pulse Engineering公司推出的屏蔽和非屏蔽表面贴装鼓形磁芯功率电感器，具有96种不同的型号。该电感值范围从1μH至数百μH，低电流下，具有不同的尺寸可满足广泛的DC／DC转换器和滤波应用。     

A Copper/Polyimide Fabrication Process for Fabricating High-Inductance Microinductor

This paper reports on a technological process that combines copper as conductor, permalloy as magnetic core material, and polyimide as insulation material to complete a microinductor on glass with high inductance. The shape of the magnetic core scheme was rectangular, of which the width of the long side and short side were 1.4 and 0.6 mm, respectively. The dimensions of the inductor are 3.86 mm times 3.94 mm times 90 mum with coil width of 20 mum and space of 35 mum. The results show that the maximum inductance is 4 muH at 1 MHz, and the maximum quality factor (Q-factor) is 1.5 at 2 MHz.     

Printed microinductors on flexible substrates for power applications

A low-profile microinductor was fabricated on a copper-clad polyimide substrate where the current carrying coils were patterned from the existing metallization layer and the magnetic core was printed using a magnetic ceramic-polymer composite material. Highly loaded ferrite-polymer composite materials were formulated, yielding adherent films with 4/spl pi/M/sub s//spl ap/3900 G at +5000 Oe applied DC field. These composite magnetic films combine many of the superior properties of high temperature ceramic magnetic materials with the inherent processibility of polymer thick films. Processing temperatures for the printed films were between 100/spl deg/C and 130/spl deg/C, facilitating integration with a wide range of substrates and components. The quality factor of the microinductor was found to peak at Q=18.5 near 10 MHz, within the optimal frequency range for power applications. A flat, nearly frequency independent inductance of 1.33 /spl mu/H was measured throughout this frequency range for a 5 mm/spl times/5 mm component, with a DC resistance of 2.6 /spl Omega/ and a resonant frequency of 124 MHz. The combination of printed ceramic composites with organic/polymer substrates enables new methods for embedding passive components and ultimately the integration of high Q inductors with standard integrated circuits for low profile power electronics.     

A Fully Integrated Thin‐Film Inductor and Its Application to a DC‐DC Converter

This paper presents a simple process to integrate thin‐film inductors with a bottom NiFe magnetic core. NiFe thin films with a thickness of 2 to 3 μm were deposited by sputtering. A polyimide buffer layer and shadow mask were used to relax the stress of the NiFe films. The fabricated double spiral thin‐film inductor showed an inductance of 0.49 μH and a Q factor of 4.8 at 8 MHz. The DC‐DC converter with the monolithically integrated thin‐film inductor showed comparable performances to those with sandwiched magnetic layers. We simplified the integration process by eliminating the planarization process for the top magnetic core. The efficiency of the DC‐DC converter with the monolithic thin‐film inductor was 72% when the input voltage and output voltage were 3.5 V and 6 V, respectively, at an operating frequency of 8 MHz.     

13.56MHz RFID读写器天线的设计与仿真

为提高13.56 MHz RFID读写器天线的发射效率,并使其天线在实验室易于研发和试制,对13.56 MHz RFID天线系统的工作原理进行了简要介绍,在此基础上,把13.56 MHz RFID读写器天线线圈等效为PCB平面螺旋电感,利用HFSS软件建立模型并仿真得出电感值L、品质因子Q值等参数。其仿真结果得到的电感值与理论计算值相差0.03μH,在可接受的范围内。考虑到实际天线产生的寄生电容,提出了在天线末端加开路补偿线圈的方法,避免因寄生电容产生地电流而使天线线圈的磁场强度降低,仿真结果证实了该方法的可行性。     

激光微熔覆法制备空芯薄膜电感的研究

采用激光微熔覆方法制备了空芯薄膜电感,着重研究了激光功率密度对电感线宽影响,以及薄膜电感的结构参数变化对电感电性能影响。结果表明,线宽随激光功率密度增大而增大;电感量随着圈数增多、中心线间距增大、线宽变大而增大。通过优化激光工艺和结构参数,制备了面积5 mm×5 mm和9 mm×9 mm,线宽100 μm和120 μm,线中心间距250 μm和500 μm,圈数8和16,厚度1 μm的空芯回字型电感,在测试频率100 kHz～1 MHz条件下,电感量为240 nH±3 nH～1.2 μH±3 nH,单位面积电感量可达14.81 nH/mm2。通过实验证明,采用激光微熔覆法制备的微电感,在同样形状和面积下,可提高电感量。     

A comparison of two micromachined inductors (bar- and meander-type)for fully integrated boost DC/DC power converters

Two micromachined integrated inductors (bar- and meander-type) are realized on a silicon wafer by using modified, IC-compatible, multilevel metallization techniques. Efforts are made to minimize both the coil resistance and the magnetic reluctance by using thick electroplated conductors, cores, and vias. In the bar-type inductor, a 25-μm thick nickel-iron permalloy magnetic core bar is wrapped with 30-μm thick multilevel copper conductor lines. For an inductor size of 4 mm×1.0 mm×110 μm thickness having 33 turns of multilevel coils, the achieved specific inductance is approximately 30 nH/mm² at 1 MHz. In the meander-type inductor, the roles of conductor wire and magnetic core are switched, i.e., a magnetic core is wrapped around a conductor wire. This inductor size is 4 mm×1.0 mm×130 μm and consists of 30 turns of a 35-μm thick nickel-iron permalloy magnetic core around a 10-μm thick sputtered aluminum conductor lines. A specific inductance of 35 nH/mm² is achieved at a frequency of 1 MHz. Using these two inductors, switched DC/DC boost converters are demonstrated in a hybrid fashion. The obtained maximum output voltage is approximately double an input voltage of 3 V at switching frequencies of 300 kHz and a duty cycle of 50% for both inductors, demonstrating the usefulness of these integrated planar inductors     

DC SQUID RF amplifiers

The noise and signal parameters of several types of RF amplifiers based on different SQUIDs with integrated and hybrid input coils were studied. A new type of multiloop DC SQUID with an integrated input coil and extremely low stray capacitances was designed. The inductance of a four-loop SQUID was 100 pH, the input coil inductance 1.3 nH, and mutual inductance 300 pH. The tuned integrated four-loop amplifier at 420 MHz had a noise temperature lower 0.5 K and a power gain of nearly 20 dB in a 60-MHz bandwidth. For the noise calibration of such amplifiers, SIS junctions were used as a shot noise source, or a cooled attenuator and a room temperature semiconductor noise source were used     

Magnetics on silicon: an enabling technology for power supply on chip

Data from the ITRS2003 roadmap for 2010 predicts voltages for microprocessors in hand-held electronics will decrease to 0.8V with current and power increasing to 4A and 3W, respectively. Consequently, low power converters will move to multimegahertz frequencies with a resulting reduction in capacitor and inductor values by factors of 5 and 20, respectively. Values required at 10 MHz, for a low power buck converter, are estimated at 130 nH and 0.6 uF, compatible with the integration of magnetics onto silicon and the concept of power supply-on-chip (PSOC). A review of magnetics-on-silicon shows that inductance values of 20 to 40nH/mm/sup 2/ can be achieved for winding resistances less than 1/spl Omega/. A 1-/spl mu/H inductance can be achieved at 5 MHz with dc resistance of 1/spl Omega/ and a Q of four. Thin film magnetic materials, compatible with semiconductor processing, offer power loss density that is lower than ferrite by a factor of 5 at 10 MHz. Other data reported includes, lowest dc resistance values of 120 m/spl Omega/ for an inductance of 120 nH; highest Q of 15 for an inductance of 350 nH and a current of 1 A for a 1- /spl mu/H inductor. Future technology challenges include reducing losses using high resistivity, laminated magnetic materials, and increasing current carrying capability using high aspect-ratio, electroplated copper conductors. Compatible technologies are available in the power switch, control, and packaging space. Integrated capacitor technology is still a long-term challenge with maximum reported values of 400 nF/cm/sup 2/.