Chaos synchronization in semiconductor lasers with optoelectronic feedback

Chaos synchronization is experimentally investigated in semiconductor lasers with delayed optoelectronic feedback. Depending on the coupling strength of the driving signal to the receiver, the lasers fall into different regimes of chaos synchronization or modulation. Synchronization happens when the coupling strength to the receiver matches the feedback strength to the transmitter, where the receiver output reproduces the output of the transmitter regardless of the presence of channel distortion or an encoded message. Modulation dominates when the coupling strength is much less than the feedback strength, where the receiver output follows the driving signal. In between, there is no sharp transition between these two regimes but only a mixture of the two phenomena. Driven oscillation is not observed in this optoelectronic feedback system when the coupling strength is increased to a level higher than the feedback strength.     

互注入半导体激光器混沌特性的研究

为了研究互注入半导体激光器产生的混沌带宽及复杂程度,采用互注入半导体激光器速率方程进行了理论圹分析.结果表明,随着注入系数的增加,混沌的带宽变大,混沌复杂程度变高;偏置电流越大,混沌的带宽越大,时间序列标准差越大,混沌越复杂.这为实现更为复杂的高带宽混沌提供了理论指导.     

延时反馈双环掺铒光纤激光器互注入系统中的混沌同步研究

分析了延时反馈双环掺铒光纤(EDF)激光器互注入 系统的动态特性,并引入一种量化时间序列复杂度的评 价方法——排列熵(PE,permutation entropy),对激光器输出状 态和混沌同步质量与复杂度的关系进行讨论。研究表明,通过调节反馈 延迟时间和反馈强度可控制系统的输出状态,使系统输出为周期态和混沌态,而且利用PE熵计算激光器 输出信号的复杂度相对于分岔图同样能直观准确的反映出系统动态行为;在激光器独立工作 情况下,输出 信号的混沌区域内夹杂有较多的周期态,而在互注入情况下,混沌区域增宽且较为平坦,同 时输出信号复 杂度的PE值较高,互注入系统有利于参数选择的范围和提高混沌通信系统的安全性;提 高注入强度可 得到高质量的混沌同步,两个激光器在同步和不同步时输出信号的复杂度是 不同的,可见 研究激光器输出信号的复杂度可成为分析混沌同步质量的一种参考。     

Multimode synchronization and communication using unidirectionally coupled semiconductor lasers

We study numerically the synchronization of two multimode semiconductor lasers unidirectionally coupled in an open-loop configuration, focusing on the comparison with the results obtained in the single-mode case. Anticipative and isochronous synchronization, and their range of validity, are analyzed from the point of view of the total lasing output, and the synchronization between individual modes is studied. Selective injection is also examined and compared with global injection. In light of these results, message encoding and decoding via multimode synchronization is analyzed.     

Chaos synchronization and chaotic signal masking in semiconductor lasers with optical feedback

Theoretical and experimental investigations of chaos synchronization and its application to chaotic data transmissions in semiconductor lasers with optical feedback are presented. Two schemes of chaos synchronization-complete and generalized synchronization-are discussed in the delay differential systems. The conditions for chaos synchronization in the systems and the robustness for the parameter mismatches are studied. The possibility of secure communications based on the chaos masking technique in semiconductor lasers with optical feedback is also discussed, and message transmission of a 1.5-GHz sinusoidal signal is demonstrated. The method of bandwidth enhancement of chaotic carriers is proposed for broad-band chaos communications.     

Characteristics of chaos synchronization in semiconductor lasers subject to polarization-rotated optical feedback

We numerically investigate the detailed characteristics of chaos synchronization in semiconductor lasers subject to polarization-rotated optical feedback. The emission of the dominant TE mode of a drive laser is rotated 90 deg and fed back to the laser with time delay. The polarization-rotated TE mode is also injected with time delay into the TM mode of a second laser. Two types of synchronization with different time-lags are found, as in the case for synchronization in semiconductor lasers with nonrotated optical feedback. However, a significant difference to the nonrotated optical feedback case is that neither of the two types of synchronization requires matching of optical carrier frequency between the two lasers.     

Spectral characteristics of semiconductor lasers with optical feedback

Optical feedback-induced changes in the output spectra of several GaAlAs lasers operating at 0.83 μm are described. The feedback radiation obtained from a mirror 60 cm away from the laser is controlled in intensity and phase. Spectral line narrowing or broadening is observed in each laser depending on the feedback conditions. Minimum linewidths observed with feedback are less than 100 kHz. Improved wavelength stability is also obtained with optical feedback resulting in 15 dB less phase noise. An analytical model for the three-mirror cavity is developed to explain these observations.     

光电反馈主动锁模

本文报道采用光电反馈法实现半导体激光器的主动锁模。在反馈环大增益工作状态下,得到了宽度为17.7ps、重复频率为926MHz、峰值功率为80mW的超短脉冲输出。     

Mode partition in semiconductor lasers with optical feedback

The authors point out that random noise processes induce mode partition fluctuations in semiconductor lasers. Mode partition depends on laser parameters and modulation current. However, external optical feedback can also increase mode partition noise. Here, a numerical solution of multimode noise-driven rate equations with time-delayed terms is utilized to investigate mode partition in semiconductor lasers with reflecting feedback. Photon statistics of the main and side modes in semiconductor lasers under both CW operation and dynamic operation are considered. Probability-density curves for the main and side modes are shown. The feedback-induced change of photon statistics of the main and side modes is clearly seen. Numerical results indicate that, if the laser used is exposed to reflections, a more stringent mode discrimination requirement for suppressing the buildup of laser-cavity longitudinal side modes may result. If mode discrimination is insufficient for avoiding the excitation of side modes, the feedback-induced power penalty depends on the fiber dispersion     

Optical feedback on self-pulsating semiconductor lasers

Weak optical-feedback effects on the statistical properties of self-pulsations in narrow-stripe semiconductor lasers are analyzed using Lang-Kobayashi-type equations. The self-pulsation features are compared with the characteristics of excited relaxation oscillations. We determine the operating regime in which the randomizing effect of spontaneous-emission noise destroys pulse coherence. In this regime, only phase-insensitive effects of optical feedback are possible, and optimum jitter reduction is achieved with delay times of the order of an integer-odd multiple of the free-running pulsation period. In the high-pump operating regime, interpulse coherence is retained and the optical-feedback phase is shown to be instrumental for pulse-jitter control. Our results show that for cavity lengths up to 10 cm, variations on the order of half an optical wavelength induce jitter variations of one order of magnitude     

Dynamics of coupled self-pulsating semiconductor lasers

We introduce and analyze a model for the dynamics of two coupled self-pulsating semiconductor lasers. We investigate the role of the complex coupling coefficient in the static and dynamic properties of the device. We find conditions for the emergence of coherent laser pulses, in which the two lasers display synchronous coherent self-pulsations (self-pulsating super modes). Nonlinear dynamics and two different routes to chaos are also individuated and discussed.     

Analysis of DFB semiconductor lasers with external optical feedback

A theoretical analysis of the sensitivity of DFB semiconductor lasers to external optical feedback is presented. Numerical simulations allow the authors to determine the optimum facet reflectivity, for a given κL value, to minimise the sensitivity to external optical feedback     

Equivalent circuit of semiconductor lasers with weak coherentoptical feedback

The equivalent circuit modelling of semiconductor lasers makes simulation of direct modulation of semiconductor lasers extremely simple through the use of circuit simulators such as SPICE. The authors extend the circuit model to incorporate the effect of weak coherent optical feedback into the laser cavity. Results from circuit simulation of the model are compared with results reported earlier as well as results obtained from direct numerical analysis of rate equations     

Nonlinear dynamics of a semiconductor laser with delayed negative optoelectronic feedback

Nonlinear dynamics of a semiconductor laser with delayed negative optoelectronic feedback are studied both numerically and experimentally. Mappings of the dynamic states and bifurcation diagrams are compared between a delayed negative optoelectronic feedback system and a delayed positive optoelectronic feedback system. Both systems follow a quasiperiodic route to chaos, where regular pulsing, quasiperiodic pulsing, and chaotic pulsing states are observed. Frequency-locked pulsing states are also found in a delayed negative optoelectronic feedback system, but not in a delayed positive optoelectronic feedback system. These frequency-locked pulsing states are experimentally observed to exhibit a harmonic frequency-locking phenomenon, where the pulsing frequency is locked to a harmonic of the delay loop frequency instead of the delay loop frequency itself. The rotation numbers of these frequency-locked pulsing states show a Devil's staircase structure.     

Subharmonic modulation distortions in semiconductor lasers with optical feedback

Experimental studies of subharmonic modulation distortions of semiconductor lasers with optical feedback are described. These distortions were found to exhibit almost resonant frequency characteristics and threshold behaviour against the modulation frequency and its depth, respectively. It was inferred that they would be excited by parametric interactions caused by some laser diode parameter changes due to modulation.     

Two-dimensional theory of distributed feedback semiconductor lasers

A theory which takes account of the two dimensional waveguide structure of the distributed-feedback (DFB) laser is presented. Laser threshold conditions in the case of no external reflections are calculated for a three-layer model in which one cladding layer has a periodically changing dielectric constant. In contrast with the coupled-wave theory the threshold conditions are found to be asymmetric with respect to the Bragg frequency. The longitudinal mode which lies below and nearest the Bragg frequency has the lowest threshold gain. The difference between the threshold gains of the two adjacent longitudinal modes straddling the Bragg frequency has a maximum as a function of the coupled strength of the grating     

Noise characteristics in line-narrowed semiconductor lasers with optical feedback

Effects of optical-feedback-induced line-narrowing on low-frequency amplitude and phase noise of semiconductor lasers are reported. Free-running laser noise is compared with that of lasers operating with external mirror feedback. While less than 1 dB difference in the amplitude noise with and without feedback is observed, line-narrowed lasers exhibit 15?20 dB reduction in low-frequency wavelength instability, or phase noise.     

Less than 10 ps optoelectronic switching by semiconductor injection lasers

The generation of electrical pulses was carried out with optoelectronic switches which were controlled by semiconductor injection lasers. Electrical pulses with rise times less than 10 ps were formed.<>     

Novel wavelength-resonant optoelectronic structure and itsapplication to surface-emitting semiconductor lasers

An optimised design for optoelectronic devices which depends on the interaction between an electromagnetic standing wave and the carrier population is described. The structure consists of quantum well layers spaced at one-half the wavelength of a selected optical transition in quantum wells. This spatial periodicity allows the amplifying or absorbing medium (quantum wells) to coincide with the peaks of the standing wave optical field in the Fabry-Perot cavity. In such a periodic medium, the gain or absorption for the selected wavelength is enhanced by a factor of two compared to a uniform medium. This concept was applied to fabricate a surface-emitting semiconductor laser in the GaAs/AlGaAs system. Lasing was achieved with the shortest gain medium length (320 nm) ever reported     

半导体激光器在高压反馈电路中的应用

阐述了一种高精度的高压反馈控制电路.它由发送电路将反馈电压实时值转换成串行数字信号,再用它调制半导体激光器发出的光,其光穿过耐高压绝缘层送给接收电路.后者通过光敏二极管和74AHC反相器整形电路获得串行数字信号,然后送给控制器中的单片机,在其软件支持下,实现全闭环控制.所述方法新颖实用,具有参考价值.