锗基底3～5μm和8～12μm双波段红外增透膜研究

文中简要叙述了双波段(3～5μm 和8～12μm) 红外增透膜的膜料选择以及锗基底上红外双波段增透膜的设计与镀制,介绍了离子束辅助沉积技术制备该薄膜的过程。提出了采用脉冲真空电弧离子镀技术镀制无氢类金刚石膜作为红外增透膜的保护膜,并讨论了镀制类金刚石膜后,镀膜元件的光谱特性。     

硫化锌衬底上氧化铪保护膜制备及性能研究

采用磁控溅射法在硫化锌衬底上制备了氧化铪薄膜,并对氧化铪薄膜的结构和性能进行了分析和测试.结果表明,制备的氧化铪薄膜结构为单斜相,膜层致密,在8～12 μm波段对硫化锌衬底的透过率没有明显影响,硬度显著高于衬底的硬度,且与衬底结合良好,适合用作硫化锌的红外保护膜.     

脉冲激光沉积类金刚石膜红外增透技术研究

针对传统方法制备类金刚石(DLC)膜存在的3～5μm波段红外透过率低这一难题,采用飞秒脉冲激光沉积(PLD)法在红外材料硅基底上镀制DLC膜.重点考查了靶材与基片的间距、背景气压、激光单脉冲能量、负偏压、温度以及掺硅量等工艺参数对其透过率的影响,经过大量的实验与优化分析,总结出一套有效的脉冲激光沉积DLC膜工艺来制备优良的光学保护增透膜.相比传统工艺,大大提高了3～5μm波段的平均红外透过率,在硅基底上单面镀制DLC膜的最高红外透过率达到了68.2%,与理论最高值的68.7%仅相差0.5%.     

宽波段窗口材料透明尖晶石的透过性能

透明尖晶石陶瓷(TMAC)材料具有耐高温、耐腐蚀、较高的硬度和机械强度等优点,透过波段从紫外、可见、中波红外到微波,是性能优异的宽波段窗口材料,能够满足不断发展的光电系统对窗口材料的多重要求,且有广阔的应用前景。对采用热压烧结结合热等静压工艺制备出的TMAC材料进行了透过性能研究,分别对可见和红外波段镀制了增透膜,测试了不同入射角的红外透过率,并根据入射角的不同镀制了增透膜,测试了镀制金刚石膜后的透过率,并对毫米波波段的透过率做了初步测试和仿真,分析了不足和未来的研究方向。     

基于As40Se60硫系玻璃的长波红外增透膜研制

As₄₀Se₆₀硫系玻璃基底沉积红外光学薄膜存在牢固性不足的缺点，以膜层牢固性为研究对象来解决膜层附着力问题。首先选择了合适的膜层材料，完成了膜系的设计及优化；然后以沉积温度为影响因素进行单因素实验，研究了ZnS连接层的镀制工艺和残余应力，采用无离子源辅助的办法降低了连接层的残余应力，提高了膜层附着力；最终解决了较高温度下的薄膜脱膜问题，研制了一种透过波段为8～12μm的红外增透膜，并确定了镀制工艺运用于实际生产。所制备的薄膜平均透过率为98%、平均反射率为0.6%，附着力、高低温、湿热实验满足GJB2845—1995标准中的要求。     

1.3～2.7 μm带通滤光膜研制与分析

光学薄膜技术广泛应用于几乎所有的光学系统、光电系统和光电仪器。新型探测器的发展对1～3 μm近红外波段附近的能量响应提出了滤波的要求。从电磁场理论和麦克斯韦方程出发,介绍了光学薄膜的设计理论,论述了带通滤光膜的设计方法。基于Optilayer软件,以氧化铝为基底,设计了一种工作波段为1.3～2.7 μm的近红外带通滤光膜。考虑到镀膜材料的匹配性问题,选择硫化锌和氟化镱作为高、低折射率材料。采用长波通与短波通相结合的设计方法,并用Optilayer软件完成了膜系的计算和优化。在氧化铝基底双面镀制膜,用电子束蒸发和离子束辅助沉积的制备工艺完成了膜系镀制。用分光光度计对制备样品进行了透过率测试。结果表明,在1.3～2.7 μm设计波段,样品的平均透过率大于95%,符合带通滤光膜的设计要求。     

氟镓酸盐红外玻璃窗口多波段增透保护膜研制

氟镓酸盐玻璃是一种性能良好的红外光窗材料。为了提升窗口观测、探测及防护性能,在氟镓酸盐基底上设计和制备了0.4~0.9 μm、1.064 μm、3.7~4.8 μm三波段复合增透保护膜。根据光学性能及环境稳定性要求选择薄膜材料并对膜系进行了设计,然后利用电子束蒸发方法对多层膜进行了制备。测量结果表明,2.9 μm处的水吸收峰拉低了中红外波段的透过率。通过改进工艺及后处理等途径提高了膜层致密度,有效抑制了膜层的水吸收。利用沸水浸泡法对镀膜元件的环境稳定性进行了实验验证。结果表明,经过离子束辅助沉积及退火处理的薄膜样品具有较好的光学性能和环境适应性。     

透明尖晶石陶瓷的透过性能研究

采用高纯、超细的尖晶石粉末作为起始原料,用真空热压烧结结合热等静压法制备出透明尖晶石陶瓷制品,制品抛光后在3～5 μm波段的透过率最高达到86%以上.通过酸碱腐蚀和高温退火对材料进行耐腐蚀和耐高温性能研究.实验结果表明,该工艺制备的透明尖晶石陶瓷有较好的耐酸碱腐蚀性能和耐高温性能.通过镀膜可提高制品中波红外透过率,单面镀增透膜后制品3～5 μm透过率最高可到92%.结合其他性能数据,简要介绍透明尖晶石陶瓷已经取得的应用和在基片、窗口材料等方面潜在的应用.     

CaF2基底上近红外区宽带增透膜的研究

以CaF2为基底设计了一种近红外区的宽带增透膜,增透波长为0.9~1.7 μm。分析了宽带增透膜初始结构的基本设计原则。分别以TiO2和SiO2作为高低折射率材料,采用电子束蒸发物理气相沉积(EBPVD)的方法进行工艺制备。利用岛津分光光度计对样品的透过率进行测量,样品双面镀制该膜系,测试结果表明样品的平均透过率达98.95%,与设计结果基本符合,具有宽带的增透特性。环境测试表明:该薄膜具有良好的附着力和牢固度,可以应用于对产品可靠性要求较高的环境中。     

掺铥钼酸钆钡晶体1.9μm腔面膜的研制

根据Tm3+∶BaGd2(MoO4)4激光晶体的发光特性,以厚度为1.1 mm的该晶体为基底,选择Ta2O5和SiO2作为高低折射率膜料,通过电子枪蒸镀的物理沉积方式分别在晶体两端面设计并镀制了输入膜系和输出膜系,同时采用霍尔离子源辅助沉积来增强晶体与膜层之间的结合力。镀膜后的晶体输入端面795 nm透过率大于90%,1.9 μm透过率小于0.2%;输出端面795 nm透过率小于10%,1.9 μm透过率等于6.55%。通过采用795 nm波长的半导体激光泵浦镀膜后的晶体,实现了1.9 μm准连续激光输出,结果表明该激光输入输出膜系的镀制满足激光器实验的使用要求。     

Quasi-stationary electron and ion processes in dielectric films and diagnostics of films

The principle of quasi-equilibrium in the study of the structures that contain semiconductors and insulators, in particular, dielectric films in the metal-insulator-semiconductor (MIS) structures is discussed. A possibility of the simultaneous measurements of the averaged convection currents in an insulator and the current flows through the semiconductor-insulator interface in the MIS structures is considered. The methods for the measurement of the concentration of mobile ions in a dielectric film are analyzed.     

用脉冲激光沉积法制备类金刚石膜及金刚石薄膜

简要评述了用脉冲激光沉积技术制备类金刚石膜及金刚石薄膜的研究进展，总结了激光脉冲沉积制备薄膜的基本原理及其特点，分析了激光波长，能量，衬底温度等对薄膜质量的影响。     

InN材料及其应用

由于具有独特的本征特性,InN材料已经成为最近两年国际上最热门的研究材料之一。本文介绍了InN材料的基本性质,探讨了材料的生长技术和应用方向。最后给出了InN材料今后发展急需解决的问题以及未来的发展应用前景。     

Thermomechanics of thin films and interfaces

Several mechanics and thermomechanics problems associated with the deposition of thin films on substrates are reviewed. They include: (1) Stress concentrations in interfacial cracks, and the corresponding calculation of the energy release rate for crack growth along the film-substrate interface. (2) The effect of microstructure and of stress relaxation by diffusional creep during the growth of a thin film on the residual stresses present in the film; and (3) the thermal conductivity in film-substrate assemblies, and the issue of extracting film thermal properties from composite measurements. The relation between bulk and thin film values of the thermal conductivity is discussed. The issue of interfacial thermal resistance, which may lead to interfacial temperature drops of the order of 0.6° K is also addressed, and discussed in view of the inhomogeneous interface in films deposited by electron beam evaporation or ion beam sputtering.     

Cadmium telluride films and solar cells

CdTe thin films for solar cell applications have been deposited by close-spaced vapor transport and by hot-wall vacuum evaporation. As-deposited films are p-type with hole densities that increase to values of 1 × 10¹⁶cm^-3with increasing substrate temperature. A variety of experimental results can be interpreted either in terms of doping by native defects such as cadmium vacancies or doping by diffusion from the graphite substrate, with evidence for self-compensation. Many CdS/CdTe/graphite solar cells have been prepared by vacuum evaporation of CdS onto thin-film CdTe, which have low values ofJ_{O} sim 10^{-9}A/cm²and high values ofJ_{SC} sim 17mA/cm². The open-circuit voltage is low at 0.48 V for CdS deposition at 300° C, but increases with decreasing CdS deposition temperature. The highest efficiency prepared to date is 6.4 percent. Tile efficiency is limited at present by the fill factor, associated with a total series resistivity in the light of the order of 10 Ω-cm². Supporting research on low-resistance contacts to p-type CdTe, grain boundary properties and passivation in p-type CdTe bicrystals and thin films, and high-resolution transmission electron microscopy of junction interfaces is briefly described.     

Flexible magnetic thin films and devices

Flexible electronic devices are highly attractive for a variety of applications such as flexible circuit boards,solar cells,paper-like displays,and sensitive skin,due to their stretchable,biocompatible,light-weight,portable,and low cost properties.Due to magnetic devices being important parts of electronic devices,it is essential to study the magnetic properties of magnetic thin films and devices fabricated on flexible substrates.In this review,we mainly introduce the recent progress in flexible magnetic thin films and devices,including the study on the stress-dependent magnetic properties of magnetic thin films and devices,and controlling the properties of flexible magnetic films by stress-related multi-fields,and the design and fabrication of flexible magnetic devices.     

DLC膜作为Ge片减反射膜的研究

本文采用rfPCVD方法,以甲苯为工作气体,制备出DLC膜,研究了它的光学性能,以及作为激光窗口材料Ge片的减反射膜的应用。     

Spin-coated PMMA films

Polymethylmethacrylate (PMMA) spin-coated thin films are commonly used as resist films in micro/nanofabrication processes. By using atomic force microscopy (AFM) imaging, scratching lithography and force–distance curves spectroscopy, the spin coating and post-processing conditions were determined, for obtaining films whose surface morphology appears featureless or is dominated by pinholes and other surface defects. Featureless appear the surfaces of films spin coated at 8 krpm from a 1.25% solution on silicon substrates and postbaked at 200 °C for 2 min on a hot plate, while surface defects in the form of large circular pits with diameters between 10 and 20 μm and depth of ∼2 nm dominate the surface morphologies of films spin coated at 7 krpm on glass substrates from a 2% solution and postbaked either at 200 °C for 2 min on a hot plate or at 170 °C for 30 min in an oven. Surface defects in the form of pinholes appear on the surfaces of films spin coated at 8 krpm on silicon substrates from a 1.25% solution (thickness of ∼8 nm) and postbaked at 170 °C for 60 min in an oven or left in a low vacuum chamber for a few days. The implication of the different film properties—depending on the preparation parameters—in lithographic techniques is explained and discussed in the paper.