CuInS2-based thin film solar cells with sputtered (Zn,Mg)O buffer

In a standard chalcopyrite-based thin film solar cell, the formation of the heterojunction is mediated by a thin buffer layer. This buffer is prepared by chemical bath deposition of CdS. The cell is completed by an undoped ZnO film followed by the highly doped transparent front contact. An alternative structure without any buffer layer where the undoped ZnO is replaced by (Zn,Mg)O has been suggested previously by Minemoto et al. [T. Minemoto, Y. Hashimoto, T. Satoh, T. Negami, H. Takakura, Y. Hamakawa, J. Appl. Phys. 89 (2001) 8327]. By adapting and applying this approach to CuInS₂ absorbers from industrial pilot production we achieved efficiencies of 8% for small area cells (as compared to 9.4% for a reference cell with CdS buffer) as well as monolithically integrated test structures.     

CuGaSe2 solar cells using atomic layer deposited Zn(O,S) and (Zn,Mg)O buffer layers

The band gap of Zn(O,S) and (Zn,Mg)O buffer layers are varied with the objective of changing the conduction band alignment at the buffer layer/CuGaSe₂ interface. To achieve this, alternative buffer layers are deposited using atomic layer deposition. The optimal compositions for CuGaSe₂ solar cells are found to be close to the same for (Zn,Mg)O and the same for Zn(O,S) as in the CuIn_0.7Ga_0.3Se₂ solar cell case. At the optimal compositions the solar cell conversion efficiency for (Zn,Mg)O buffer layers is 6.2% and for Zn(O,S) buffer layers it is 3.9% compared to the CdS reference cells which have 5-8% efficiency.     

High efficiency microcrystalline silicon solar cells with Hot-Wire CVD buffer layer

Microcrystalline silicon (μc-Si:H) solar cells with i-layers deposited by hot wire chemical vapor deposition (HWCVD) exhibit higher open circuit voltage and fill factor than the cells with i-layers deposited by plasma enhanced (PE)-CVD. Inserting an intrinsic μc-Si:H p/i buffer layer prepared by HWCVD into PECVD cells nearly eliminates these differences. The influence of buffer layer properties on the performance of μc-Si:H solar cells was investigated. Using such buffer layers allows to apply high deposition rate processes for the μc-Si:H i-layer material yielding a high efficiency of 10.3% for a single junction μc-Si:H solar cell.     

Optimization of ALD-(Zn,Mg)O buffer layers and (Zn,Mg)O/Cu(In,Ga)Se2 interfaces for thin film solar cells

(Zn,Mg)O films, fabricated by atomic layer deposition, ALD, are investigated as buffer layers in Cu(In,Ga)Se₂-based thin film solar cells. Optimization of the buffer layer is performed in terms of thickness, deposition temperature and composition. High efficiency devices are obtained for deposition at 105-135 °C, whereas losses in open circuit voltage are observed at higher deposition temperatures. The optimal compositional region for (Zn,Mg)O buffer layers in this study is for Mg/(Zn + Mg) contents of about 0.1-0.2, giving band gap values of 3.5-3.7 eV. These devices appear insensitive to thickness variations between 80 and 600 nm. Efficiencies of up to 16.2% are obtained for completely Cd- and S-free devices with (Zn,Mg)O buffer layers deposited with 1000 cycles at 120 °C and having a band gap of 3.6 eV.     

Influence of anode roughness and buffer layer nature on organic solar cells performance

Fluorine doped transparent conductive tin oxide thin films (FTO) of different surface roughness have been deposited by chemical vapor deposition (FTO_SOL), classical chemical spray pyrolysis (FTO_CSP), and spray pyrolysis onto heated substrates using infra red irradiation (FTO_IRSP); the three deposition methods inducing different surface roughness. It was found that the different FTOs presented similar electrical properties while their structural, morphological and optical properties were related to surface properties. These FTO films have been used as anode in multilayer organic solar cells, based on coupled donor/acceptor-copper phthalocyanine/fullerene. To improve solar cell performance, buffer layers of different natures have been tried at the anode/organic material interface. Deposition of a thin molybdenum oxide film onto FTO smooth films afforded reproducible devices with performance similar to those obtained with indium tin oxide anodes. However, cell efficiency decreased as FTO surface roughness increased. The degree of degradation depended on the nature of the buffer layer. We show that it is necessary to use buffer layer material that allows consistency and completeness of the electrode coverage.     

铜基薄膜太阳电池无镉缓冲层的研究进展

铜基太阳电池是以具有含铜的黄铜矿结构化合物或其衍生物为吸收层的太阳电池,其中以CIGS为吸收层的薄膜太阳电池是目前效率最高的铜基太阳电池。典型的铜基太阳电池通常在窗口层和吸收层间加一层CdS缓冲层作为窗口过渡层,但由于Cd有毒,CdS带隙较小,因此人们对无镉缓冲层材料进行了广泛的探索研究。综述了铜基薄膜太阳电池无镉缓冲层研究进展,指出了作为缓冲层的结构和光电特性要求,比较了各类无镉缓冲层的不同制备方法,讨论了无镉缓冲层研究中存在的问题和今后发展的方向,特别指出锌基化合物是最有潜力的无镉缓冲层材料。     

The influence of the organic/inorganic interface on the organic-inorganic hybrid solar cells

Organic-inorganic hybrid solar cells based on poly(3-hexylthiophene) (P3HT) and (6,6)-phenyl C61 butyric acid methyl ester (PCBM) hybridized with ZnO nanorods were fabricated by growing vertical ZnO nanorods on indium tin oxide (ITO) substrates and filling with bulk heterojunction polymers (P3HT:PCBM). The interface between the organic and inorganic nanostructures influences the performance of the organic-inorganic hybrid solar cells. In this paper, the influence of the state of the P3HT:PCBM/ZnO interface on the performance of organic-inorganic hybrid solar cells is examined. The solar cell performance was high when the P3HT:PCBM/ZnO junction area was large. The charge separation is effective when the active layer/electron transport layer junction area is large, resulting in increasing photocurrent and a high conversion efficiency. The bulk-heterojunction polymer concentration was kept low to infiltrate into the ZnO nanorods, resulting in a large active layer/electron transport layer junction area.     

CIGS薄膜太阳能电池无镉缓冲层制备方法的研究现状

回顾了近年来CIGS薄膜太阳能电池无镉缓冲层的研究进展;着重介绍了In2S3,ZnS,Zn1-xMgxO三种可替代CdS缓冲层材料的常用制备方法及相关特性,并且对应给出了每种材料和方法获得的电池组件效率。展望了无镉缓冲层的发展前景,分析了化学水浴、原子层沉积、溅射三种缓冲层沉积技术各自在大规模工业化应用中的优劣势。认为溅射沉积技术是现阶段最理想的工业化制备技术,同时指出了无镉缓冲层在大规模工业化应用中亟需解决的问题。     

Indium sulfide buffer/CIGSSe interface engineering: Improved cell performance by the addition of zinc sulfide

Indium sulfide buffer layers deposited by the spray-ion layer gas reaction (Spray-ILGAR) technique are a viable alternative to the traditional cadmium sulfide buffer layer in thin film solar cells. In the present work we report on the results of manipulating the absorber/buffer interface between the chalcopyrite Cu(In,Ga)(S,Se)₂ absorber (CIGSSe) and the indium sulfide buffer. It is shown that the deposition of a small amount of zinc sulfide at the absorber/buffer interface can be used to increase the open circuit voltage. A small but significant increase of 20 mV (up to 580 mV), as compared to the pure indium sulfide buffered cells is possible leading to an increase in the overall efficiency.     

Fabrication and characteristics of n-Si/c-Si/p-Si heterojunction solar cells using hot-wire CVD

A double-side (bifacial) heterojunction (HJ) Si solar cell was fabricated using hot-wire chemical vapor deposition. The properties of n-type, intrinsic and p-type Si films were investigated. In these devices, the doped microcrystalline Si layers (n-type Si for emitter and p-type Si for back contact) are combined with and without a thin intrinsic amorphous Si buffer layer. The maximum temperature during the whole fabrication process was kept below 150 °C. The influence of hydrogen pre-treatment and n-Si emitter thickness on performance of solar cells have been studied. The best bifacial Si HJ solar cell (1 cm² sample) with an intrinsic layer yielded an active area conversion efficiency of 16.4% with an open circuit voltage of 0.645 V, short circuit current of 34.8 mA/cm² and fill factor of 0.73.     

铜锌锡硫硒薄膜太阳电池中有希望的无镉双缓层

Zn(O,S)薄膜由于低成本和生态友好的特性而被广泛用作锌黄锡矿薄膜太阳能电池的无镉缓冲层.但是Zn(O,S)缓冲层的载流子浓度和电导率较低,这将会导致器件性能的降低.在这项工作中,我们引入了一层额外的In2S3缓冲层,并通过后退火处理来改进Zn(O,S)层以及CZTSSe层的属性.经过退火处理后,我们发现Zn(O,S...     

Reactive sputtering of ZnO/ZnO:Al contacts for chalcopyrite solar modules

Reactive sputtering is an option to further reduce costs associated with the deposition of the transparent front contact for chalcopyrite-based solar modules. Our approach here is to develop a proof of concept for a ZnO window, where the i-ZnO and the doped ZnO:Al are both sputtered in a reactive process. It is shown, that on cell level the device performance is preserved when replacing the standard RF processes with the fully reactive process. It is also shown, that the series resistance of module test structures increases with reactively sputtered ZnO. This finding, as well as a reduced damp heat stability of mini modules without encapsulation are tentatively assigned to an increased contact resistance and corrosion at the Molybdenum/ZnO interface within the interconnects.     

Growth of ZnO nanowires on fibers for one-dimensional flexible quantum dot-sensitized solar cells

One-dimensional flexible solar cells were fabricated through vertical growth of ZnO nanowires on freestanding carbon fibers and subsequent deposition of CdS quantum dots (QDs). Under light illumination, excitons were generated in the CdS QDs and dissociated in the ZnO/CdS interface. Photoelectrochemical characterization indicates that fiber quantum dot-sensitized solar cells (QDSCs) could effectively absorb visible light and convert it to electric energy. The photoelectrochemical performance was enhanced after the deposition of a ZnS passivating layer on the CF/ZnO/CdS surface. The highest conversion efficiency of about 0.006% was achieved by the fiber QDSCs. A higher conversion efficiency was expected to be achieved after some important parameters and cell structure were optimized and improved.     

Cu(In,Ga)Se2 solar cells with double layered buffers grown by chemical bath deposition

In based mixture In_x(OH,S)_y buffer layers deposited by chemical bath deposition technique are a viable alternative to the traditional cadmium sulfide buffer layer in thin film solar cells. We report on the results of manipulating the absorber/buffer interface between the chalcopyrite Cu(In,Ga)Se₂ (CIGS) absorber and CdS or ZnS buffer by addition of a thin In based mixture layer. It is shown that the presence of thin In_x(OH,S)_y at the CIGS absorber/CdS or ZnS buffer interfaces greatly improve the solar cell performances. The performances of CIGS cells using dual buffer layers composed of In_x(OH,S)_y/CdS or In_x(OH,S)_y/ZnS increased by 22.4% and 51.6%, as compared to the single and standard CdS or ZnS buffered cells, respectively.     

Analysis on the interfacial properties of transparent conducting oxide and hydrogenated p-type amorphous silicon carbide layers in p-i-n amorphous silicon thin film solar cell structure

Quantitative estimation of the specific contact resistivity and energy barrier at the interface between transparent conducting oxide (TCO) and hydrogenated p-type amorphous silicon carbide (a-Si_1 − xC_x:H(p)) was carried out by inserting an interfacial buffer layer of hydrogenated p-type microcrystalline silicon (μc-Si:H(p)) or hydrogenated p-type amorphous silicon (a-Si:H(p)). In addition, superstrate configuration p-i-n hydrogenated amorphous silicon (a-Si:H) solar cells were fabricated by plasma enhanced chemical vapor deposition to investigate the effect of the inserted buffer layer on the solar cell device. Ultraviolet photoelectron spectroscopy was employed to measure the work functions of the TCO and a-Si_1 − xC_x:H(p) layers and to allow direct calculations of the energy barriers at the interfaces. Especially interface structures were compared with/without a buffer which is either highly doped μc-Si:H(p) layer or low doped a-Si:H(p) layer, to improve the contact properties of aluminum-doped zinc oxide and a-Si_1 − xC_x:H(p). Out of the two buffers, the superior contact properties of μc-Si:H(p) buffer could be expected due to its higher conductivity and slightly lower specific contact resistivity. However, the overall solar cell conversion efficiencies were almost the same for both of the buffered structures and the resultant similar efficiencies were attributed to the difference between the fill factors of the solar cells. The effects of the energy barrier heights of the two buffered structures and their influence on solar cell device performances were intensively investigated and discussed with comparisons.     

Comparison of charge distributions in CIGS thin-film solar cells with ZnS/(Zn,Mg)O and CdS/i-ZnO buffers

The commonly used CdS/i-ZnO buffer system in Cu(In,Ga)Se₂ (CIGS) thin-film solar cells was substituted by ZnS/(Zn,Mg)O. ZnS has a higher transmission in the short wavelength range due to the higher bandgap energy E_g = 3.7 eV compared to CdS with E_g = 2.4 eV. Unfortunately, in our experiments the resulting gain in short-circuit current density j_SC as the result of reduced absorption losses in the blue wavelength region is mostly accompanied by a decrease in open-circuit voltage V_OC of the devices with ZnS buffer. This contribution discusses possible explanations for the systematically lower open-circuit voltages of the devices with a ZnS buffer layer.The carrier collection properties of the devices with a ZnS buffer were investigated by electron beam induced current measurements in the junction configuration. The maximum of the collection probability for ZnS cells is located in the CIGS bulk and not near the buffer/CIGS interface like for solar cells with CdS buffer. Additionally, we observed a larger space charge width compared to devices with a CdS buffer. This finding concurs with the considerably lower capacitance values and also lower charge densities in ZnS-buffered devices, as determined by capacitance voltage measurements.Based on these findings, the main reason for the lower open-circuit voltages of our ZnS devices is that the charge densities are lower than for the CdS/i-ZnO cells.     

Effect of a zinc oxide,at the cathode interface,on the efficiency of inverted organic photovoltaic cells based on the CuPc/C<Subscript>60</Subscript> couple

The effect of ZnO buffer layer on the performances of inverted multilayers organic solar cells has been studied. ZnO:Al conductive films and insulating ZnO films deposited by spin coating have been probed. The ZnO buffer layer has been introduced between the ITO cathode and the Organic acceptor. The cells are based on the multilayer junctions bathocuproine/fullerene/copper phthalocyanine. The organic photovoltaic cells performances improvement depends of the ZnO layer introduced. ZnO:Al conductive layers decreases the potential barrier at the interface cathode/organic. This allows decreasing the series resistance which improves significantly the cell efficiency. Insulating ZnO increases only slightly the solar cells performance by increasing significantly the shunt resistance and therefore the open circuit voltage of the cells.     

Stability of microcrystalline silicon solar cells with HWCVD buffer layer

Microcrystalline silicon solar cells deposited by VHF-PECVD with or without HWCVD grown p/i interface buffer layer were investigated. We studied long-term stability under storage in ambient atmosphere and performed light soaking experiments. Cells with i-layers covering a wide range of crystalline volume fractions were studied. All cells were stable or degraded slightly after storage for 2 years in air, regardless of crystalline volume fraction or presence of p/i buffer interface. Upon light soaking all cells show efficiency degradation to more or less extent depending on crystal volume fraction of the i-layer and the presence of the buffer layer: the solar cell with high crystal volume fraction are nearly stable, cells with high amorphous volume fraction degrade by up to 20%. The solar cell with HWCVD buffer layer shows better stability in the high efficiency range of relative efficiency degradation typically less than 10% after 1000 h AM 1.5 light soaking. The efficiency degradation is mainly caused by Voc and FF deterioration while Jsc is almost stable.     

TiO2 Electron Transport Bilayer for Highly Efficient Planar Perovskite Solar Cell

In planar perovskite solar cells, it is vital to engineer the extraction and recombination of electron–hole pairs at the electron transport layer/perovskite interface for obtaining high performance. This study reports a novel titanium oxide (TiO₂) bilayer with different Fermi energy levels by combing atomic layer deposition and spin‐coating technique. Energy band alignments of TiO₂ bilayer can be modulated by controlling the deposition order of layers. The TiO₂ bilayer based perovskite solar cells are highly efficient in carrier extraction, recombination suppression, and defect passivation, and thus demonstrate champion efficiencies up to 16.5%, presenting almost 50% enhancement compared to the TiO₂ single layer based counterparts. The results suggest that the bilayer with type II band alignment as electron transport layers provides an efficient approach for constructing high‐performance planar perovskite solar cells.     

Substitution of the CdS buffer layer in CIGS thin‐film solar cells

This contribution provides an overview of current activities in the area of alternative buffer layers for Cu(In,Ga)(S,Se)₂ (CIGS) thin‐film solar cells. Good cell and module results were achieved by replacing the standard Cds buffer with Zn(O,S), In₂S₃, (Zn,Sn)O_y or (Zn,Mg)O grown by various methods like chemical bath deposition (CBD), thermal evaporation, sputtering, atomic layer deposition, and spray ion layer gas reaction. The “dry” deposition methods like sputtering and thermal evaporation could be favorable in an industrial environment on glass substrates or application in a roll‐to‐roll coater. Significant progress was made within the last two years for various Cd‐free CIGS devices. We list current records for cells with alternative buffers, e. g. Zn(O,S)‐buffered champion cells with efficiencies between 18—20 % and In₂S₃‐buffered cells with 16—17 %. Both materials have the potential to substitute CdS with efficiencies approaching the 20 % mark already surpassed by CIGS cells with CBD CdS buffers.