The copper influence on the PL spectra of CdTe thin film as a component of the CdS/CdTe heterojunction

The influence of annealing in the presence of CdCl₂ and a thin copper layer deposited onto CdTe on the photoluminescence spectra of CdTe, as a component of CdS/CdTe heterojunction, has been studied for two excitation wavelengths: 0.337 μm and 0.6328 μm. The behavior of the PL was studied as a function of the measurement temperature and excitation intensity. At 0.6328 μm excitation, the interface PL consists of a known 1.43X band, and the chloride annealing enhances radiative transitions at 1.536 eV. The intensity of the 1.536 eV transitions increases when Cu is present. The PL of as-deposited CdTe films prepared in the presence of oxygen has the 1.45X band attenuated when excited with 0.337 μm excitation wavelength.     

Photoluminesence studies of CdTe/SnO2 and CdTe/CdS heterojunctions: The influence of oxygen and the CdCl2 heat treatment

The influence of oxygen and annealing in the presence of CdCl₂ on the photoluminescence (PL) spectra of CdTe, component of SnO₂/CdTe heterojunction (HJ), has been studied in a temperature range of 17-100 K. The changes in the photoluminescence spectra were studied as a function of excitation intensity. Analysis of the PL spectra was carried out with considerations of spectra obtained from CdS/CdTe heterojunctions. CdTe side PL (SnO₂/CdTe HJ) consisted of 1.450 eV-DA defect band and 1.243 eV band (17 K). Annealing resulted in the disappearance of 1.243 eV band in oxygen containing samples. Interface PL for the unannealed samples consisted of mainly the 1.264 eV and a trace of the defect band. The CdCl₂ treatment is responsible for an almost symmetrical 1.416 eV band.     

Synthesis and characterization of 10% Sb doped CdTe thin films by stacked elemental layer (SEL) method

Antimony doped CdTe thin films have been prepared by stacked elemental layer (SEL) method. The X-ray diffraction spectra have demonstrated that the structure of the annealed films are polycrystalline in nature and mixed CdTe and Sb₂Te₃ phases have been observed at high annealing temperature (500 °C). The increased texture coefficient has been observed for planes (311) and (220) rather than (111) plane of CdTe in annealed stack (Te/Cd/Sb). Transmission spectra have been recorded and the calculated band gap lies between 1.45 and 1.68 eV. A pronounced PL spectrum has been noticed at 532 nm and depicted the presence of nano size particles in annealed thin films.     

Utilization of residual CdCl2 in CBD-CdS to realize grain growth in CdTe: A novel route

CdTe films were deposited by thermal evaporation onto chemical bath deposited CdS (CBD-CdS) films. The composite films were subjected to rapid thermal annealing (RTA) to observe simultaneous grain growth in both the CdS and CdTe layers. The films were characterized by measuring the compositional, microstructural and photoluminescence (PL) properties. PL spectra is dominated by the characteristic peaks (∼1.42 eV and ∼1.26 eV) associated with the virgin CdTe film. Additional features located at ∼2.56 eV and ∼1.99 eV could also be detected. The Fourier Transform Infra Red (FTIR) peak at ∼482 cm⁻¹ appeared due to the simultaneous presence of absorption peaks for CdTe stretching mode as well as Cd-S modes. Appearance of the broad peak between 1000 cm⁻¹ and 1165 cm⁻¹ may be an indication of interfacial alloying. Secondary ion mass Spectroscopy (SIMS) measurements were done to observe the compositional uniformity in the film and to measure the interfacial mixing behaviour.     

Surface science studies of Cu containing back contacts for CdTe solar cells

The electronic interface properties of Cu_2 − xTe with CdTe have been investigated using in-situ photoelectron spectroscopy (XPS, UPS) in comparison to CdTe/Cu and CdTe/Te interfaces. A band bending towards the Fermi level as a result of the p-doping can be seen in the CdTe by depositing Cu_2 − xTe. Different Cu_2 − xTe films were prepared by varying the deposition parameters such as substrate temperature and deposition rate of the Cu and Te sources. For all Cu_2 − xTe/CdTe interfaces a valence band offset of 0.8 ± 0.05 eV has been found.     

Effect of high-temperature annealing on the optical and photoluminescence properties of nanocrystalline SiC films

The optical and photoluminescence (PL) properties of nanocrystalline 3C-SiC films and the effect of the boundary regions between the nanocrystals were studied for two sets of films: (a) films with 10-15 nm nanocrystal size obtained by direct ion deposition method and (b) similar films annealed in oxygen at 850-950 °C. It was shown that annealing of the nanocrystalline SiC films resulted in weaker absorption in a broad spectral range, and to the increase of the optical band gap from 1.8 to 2.2 eV. On the contrary, the edge PL bands in the UV range (2.2 to 2.4 eV) remained similar. In the IR range, three maxima absent in the as-grown films, appeared at 1.52 eV, 1.56 eV and 1.63 eV. Measurement of the intensity of PL maxima as a function of the excitation power showed a nonlinear dependence that was attributed to the onset of stimulated emission.     

Oxygen vacancy in Al2O3: Photoluminescence study and first-principle simulation

Broad photoluminescence (PL) band at 2.97 eV excited in the band near 6.0 eV in amorphous chemical vapor deposition films is related to the neutral oxygen vacancy by analogy with crystalline Al₂O₃. The identification of this PL band was supported by the results of first-principle quantum chemical simulation, which showed 6.3 and 6.4 eV bands in the extinction spectra for α- and γ-Al₂O₃, respectively. Other PL bands are attributed to ionized single vacancies (F⁺-centers), divacancies (F₂) and, probably, interstitial Al.     

Optical characterization of vacuum evaporated CdZnTe thin films deposited by a multilayer method

CdZnTe thin films of thickness 450–1400 nm have been evaporated under vacuum onto unheated glass substrates, using a multilayer method. During film deposition, the two evaporation sources, separated by two glass cylinders, were maintained at temperatures of 720 K for Zn and at 925–1200 K for CdTe, respectively. After deposition, the samples were annealed in air up to 775 K. The structural and optical properties of both as-deposited and heat-treated samples were investigated. Depending on the preparation conditions and the annealing temperature, the value of the optical band gap, E_g, of respective films varied between 1.16 and 1.63 eV. The obtained results are discussed in correlation with the structure of the films and the role of Zn atoms in CdTe films.     

Growth of cubic and hexagonal CdTe thin films by pulsed laser deposition

The paper reports the growth of cadmium telluride (CdTe) thin films by pulsed laser deposition (PLD) using excimer laser (KrF, λ=248 nm, 10 Hz) on corning 7059 glass and SnO₂-coated glass (SnO₂/glass) substrates at different substrate temperatures (T_s) and at different laser energy pulses. Single crystal target CdTe was used for deposition of thin films. With 30 min deposition time, 1.8- to ∼3-μm-thick films were obtained up to 200 °C substrate temperature. However, the film re-evaporates from the substrate surface at temperatures >275 °C. Atomic force microscopy (AFM) shows an average grain size ∼0.3 μm. X-ray diffraction analysis confirms the formation of CdTe cubic phase at all pulse energies except at 200 mJ. At 200 mJ laser energy, the films show hexagonal phase. Optical properties of CdTe were also investigated and the band gap of CdTe films were found as 1.54 eV for hexagonal phase and ∼1.6 eV for cubic phase.     

Characterization of nanocrystalline cadmium telluride thin films grown by successive ionic layer adsorption and reaction (SILAR) method

Structural, electrical and optical characteristics of CdTe thin films prepared by a chemical deposition method, successive ionic layer adsorption and reaction (SILAR), are described. For deposition of CdTe thin films, cadmium acetate was used as cationic and sodium tellurite as anionic precursor in aqueous medium. In this process hydrazine hydrate is used as reducing agent and NH₄OH as the catalytic for the decomposition of hydrazine. By conducting several trials optimization of the adsorption, reaction and rinsing time duration for CdTe thin film deposition was done. In this paper the structural, optical and electrical properties of CdTe film are reported. The XRD pattern shows that films are nanocrystalline in nature. The resistivity is found to be of the order of 411 × 10³ Ω-cm at 523 K temperature with an activation energy of ∼ 0.2 eV. The optical absorption studies show that films have direct band gap (1.41 eV).     

Studies of key technologies for large area CdTe thin film solar cells

The structure and main manufacturing technologies of CdTe film solar cells of large area are reviewed. Among the technologies, some have been developed for application in a pilot manufacturing line. The high resistant SnO₂ (HRT) thin films have been fabricated by PECVD. The effects of annealing on the structure and properties have been studied. A surface etching process of CdTe in low temperature and lower concentration of nitric acid has been developed. The Cd_1 − xZn_xTe ternary compound films have been studied. In order to improve the back contact layer, Cd_0.4Zn_0.6Te layer with 1.8 eV band gap as a substitute for ZnTe layer is introduced in CdTe cells. The effects of the technologies on performance of CdTe cells and feasibility of application in the modules are discussed.     

Effect of 80 MeV oxygen ion beam irradiation on the properties of CdTe thin films

Polycrystalline CdTe thin films were irradiated with 80 MeV oxygen (O⁶⁺) ions for various fluences and its effect on the composition, structure, surface topography and optical properties have been investigated. The as-grown films are found to be slightly Te-rich in composition and there is no significant change in the composition after irradiation. X-ray diffraction analysis shows a high degree of crystallite orientation along the (111) plane of cubic phase CdTe. Upon irradiation a large decrease in intensity of the (111) plane and a small shift in the peak position has been resulted. The shift in the peak position is correlated with the change in the residual stress. The surface roughness of the films get increased after irradiation. A decrease in the grain size was observed after irradiation due to ion-induced recrystallization. The optical band gap energy decreased from 1.53 eV for as-grown film to 1.46 eV upon irradiation. The photoluminescence (PL) spectrum is dominated by the defect band and the effect of irradiation has been discussed and correlated with the observed change in the XRD peak position and optical band gap.     

Role of thermal treatment on the luminescence properties of CdTe thin films for photovoltaic applications

The efficiency of CdTe based solar cells is strongly enhanced by a thermal treatment in HCF₂Cl ambient. CdTe thin films deposited on CdS/ZnO/ITO/glass by Closed Space Sublimation before and after the annealing are characterised. The CdTe morphology is studied by atomic force microscopy and scanning electron microscopy. In the treated films the non-homogeneous distribution of the grain size disappears, in addition an increasing of the dimensions of the grains is observed. Cathodoluminescence analyses show a remarkable difference in the spectra between the treated and untreated structures. A strong increase in the intensity of the 1.4 eV band is observed by increasing the HCF₂Cl content. A model of the electronic levels inside the CdTe band gap, due to incorporation of Cl (or F) is proposed.     

Synthesis of highly luminescent CdTe/ZnO core/shell quantum dots in aqueous solution

The synthesis and photoluminescence (PL) properties of aqueous CdTe/ZnO core/shell quantum dots (QDs) have been investigated by using thiolglycolic acid as a capping reagent. The highlighted contribution of the present study was CdTe QDs coated with a ZnO shell by controlling the hydrolysis process of Zn(OAc)₂. The QDs benefitted from overcoming the high lattice mismatch between CdTe and ZnO. The PL peak wavelength of the CdTe/ZnO QDs with high PL quantum yields up to 88% was located in a range between 547 and 596 nm by adjusting the size of CdTe cores and the thickness of ZnO shells. The results of X-ray diffraction analysis and transmission electron microscopy observation indicate that the dot-shaped CdTe/ZnO QDs (566 nm) with an average size of 2.2 nm in diameter belong to the cubic CdTe crystal structure. Due to the passivation of surface defects, it is found that the luminescence decay curves accord with a biexponential decay model of exciton and trap radiation behavior. The average PL lifetimes of CdTe (571 nm) and CdTe/ZnO (596 nm) QDs at room temperature are 27.3 and 35.1 ns, respectively.     

Structural and optical properties of CdS thin films grown by chemical bath deposition

Cubic cadmium sulphide (CdS) thin films with (111) preferential orientation were prepared by chemical bath deposition (CBD) technique, using the reaction between NH₄OH, CdSO₄ and CS(NH₂)₂. The films properties have been investigated as a function of bath temperature and deposition time. Structural properties of the obtained films were studied by X-ray diffraction analysis. The structural parameters such as crystallite size have been evaluated. The transmission spectra, recorded in the UV visible range reveal a relatively high transmission coefficient (70%) in the obtained films. The transmittance data analysis indicates that the optical band gap is closely related to the deposition conditions, a direct band gap ranging from 2.0 eV to 2.34 eV was deduced. The electrical characterization shows that CdS films' dark conductivities can be controlled either by the deposition time or the bath temperature.     

Study of Ar + O2 deposition pressures on properties of pulsed laser deposited CdTe thin films at high substrate temperature

Cadmium telluride (CdTe) thin films deposited by pulsed laser deposition (PLD) on fluorine–tin–oxide substrates under different pressures of argon (Ar) + oxygen (O₂) at high substrate temperature (T_s = 500 °C) was reported in this paper. In our work, the CdTe thin films were prepared successfully at high T_s by inputting Ar + O₂. As reported, PLD-CdTe thin films were almost prepared at low substrate temperatures (<300 °C) under vacuum conditions. The deposition of CdTe thin films at high T_s by PLD is rarely reported. The influence of the Ar + O₂ gas pressure on thickness, structural performance, surface morphology, optical property and band gap (E_g) had been investigated respectively by Ambios probe level meter, X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV–Vis spectrometer. Strong dependence of properties on the deposition pressures was revealed. In the range of Ar + O₂ gas pressure from 5 to 12 Torr, the deposition rate and the E_g of CdTe films vary in the range of 41.9–57.66 nm/min then to 35.26 nm/min and 1.51–1.54 eV then to 1.47 eV, respectively. The XRD diagrams showed that the as-deposited films were polycrystalline, and the main phase was cubic phase. However, the preferred orientation peak disappeared when the deposition pressure was higher. SEM images indicated that the CdTe film deposited at a higher deposition pressure was more uniform and had a higher compactness and a lower pinhole density. Furthermore, based on this thorough study, FTO/PLD-CdS (100 nm)/PLD-CdTe (~1.5 μm)/HgTe:Cu/Ag solar cells with an efficiency of 6.68 % and an area of 0.64 mm² were prepared successfully.     

Photoluminescence characterization of β-FeSi2 prepared by ion beam sputter deposition (IBSD) method

Photoluminescence (PL) measurement technique was found to be effective in revealing the unique characteristics of β-FeSi₂ film formation on Si substrates by means of ion beam sputter deposition (IBSD) method. A strong photoluminescence peak at around 0.8 eV was observed for β-FeSi₂ samples and also for Si substrates that were sputter etched by Ne⁺, and then thermally annealed in air at elevated temperature. Comparison with literature data indicated that the PL peak at 0.8 eV observed in this study was mainly from D1 emission bands in Si substrate, whose intensity was enhanced by the sputter etching and the subsequent annealing of the substrate. Furthermore, comparison between CZ-Si and FZ-Si results indicated that the energy of 0.8 eV peak observed in this study was affected by the presence of oxygen in the Si bulk as well.     

Investigation of potential and compositional fluctuations in CuGa3Se5 crystals using photoluminescence spectroscopy

We studied the photoluminescence (PL) properties of the ordered defect compound CuGa₃Se₅. Different single crystals were grown by the vertical Bridgman method and by the solid phase crystallization method. Their crystal structure and cell parameters were determined by X-ray diffraction. The PL spectra were recorded at T = 10-300 K. Also, laser power dependences were studied. We found an asymmetric PL band at 1.76 eV. PL band shifts towards higher energies with increasing laser power. The shape and properties of this band assure the presence of potential and compositional fluctuations. The influence of both fluctuations on the PL properties of CuGa₃Se₅ is studied and the radiative recombination processes are explained.     

Optical properties of swift ion beam irradiated CdTe thin films

This paper reports the effect of swift (80 MeV) oxygen (O⁺⁶) ion irradiation on the optical properties of CdTe thin films grown by conventional thermal evaporation on glass substrates. The films are found to be slightly Te-rich in composition and irradiation results no change in the elemental composition. The optical constants such as refractive index (n), absorption coefficient (α) and the optical band gap energy show significant variation in their values with increase in ion fluence. Upon irradiation the band gap energy decreased from a value of 1.53 eV to 1.46 eV whereas the refractive index (n) increased from 2.38 to 3.12 at λ = 850 nm. The photoluminescence spectrum shows high density of native defects whose density strongly depends on the ion fluence. Both analyses indicate considerable defect production after swift ion beam irradiation.     

Property variations of direct-current reactive magnetron sputtered copper oxide thin films deposited at different oxygen partial pressures

Cuprous oxide (Cu₂O) and cupric oxide (CuO) thin films were deposited on glass substrates at different oxygen partial pressures by direct-current reactive magnetron sputtering of pure copper target in a mixture of argon and oxygen gases. Oxygen partial pressure was found to be a crucial parameter in controlling the phases and, thus, the physical properties of the deposited copper oxide thin films. Single-phase Cu₂O thin films with cubic structure were obtained at low oxygen partial pressure between 0.147 Pa and 0.200 Pa while higher oxygen partial pressure promoted the formation of CuO thin films with base-centered monoclinic structure. Polycrystalline Cu₂O thin films deposited with oxygen partial pressure at 0.147 Pa possessed the lowest p-type resistivity of 1.76 Ω cm as well as an optical band gap of 2.01 eV. On the other hand, polycrystalline CuO thin films deposited with oxygen partial pressure at 0.320 Pa were also single phase but showed a n-type resistivity of 0.19 Ω cm along with an optical band gap of 1.58 eV.