Application of phase-change materials in memory taxonomy

Abstract

Phase-change materials are suitable for data storage because they exhibit reversible transitions between crystalline and amorphous states that have distinguishable electrical and optical properties. Consequently, these materials find applications in diverse memory devices ranging from conventional optical discs to emerging nanophotonic devices. Current research efforts are mostly devoted to phase-change random access memory, whereas the applications of phase-change materials in other types of memory devices are rarely reported. Here we review the physical principles of phase-change materials and devices aiming to help researchers understand the concept of phase-change memory. We classify phase-change memory devices into phase-change optical disc, phase-change scanning probe memory, phase-change random access memory, and phase-change nanophotonic device, according to their locations in memory hierarchy. For each device type we discuss the physical principles in conjunction with merits and weakness for data storage applications. We also outline state-of-the-art technologies and future prospects.     

Disorder-induced localization in crystalline phase-change materials

Localization of charge carriers in crystalline solids has been the subject of numerous investigations over more than half a century. Materials that show a metal-insulator transition without a structural change are therefore of interest. Mechanisms leading to metal-insulator transition include electron correlation (Mott transition) or disorder (Anderson localization), but a clear distinction is difficult. Here we report on a metal-insulator transition on increasing annealing temperature for a group of crystalline phase-change materials, where the metal-insulator transition is due to strong disorder usually associated only with amorphous solids. With pronounced disorder but weak electron correlation, these phase-change materials form an unparalleled quantum state of matter. Their universal electronic behaviour seems to be at the origin of the remarkable reproducibility of the resistance switching that is crucial to their applications in non-volatile-memory devices. Controlling the degree of disorder in crystalline phase-change materials might enable multilevel resistance states in upcoming storage devices.     

Chalcogenide glasses as prospective materials for optical memories and optical data storage

This paper first reviews recent progress in the understanding of the nanometer-scale mechanism of reversible photostructural changes in chalcogenide glasses, and its relevance to various photo-induced phenomena. Then the principles of phase-change optical recording are described. Finally, a novel technique for overcoming the diffraction limit in optical recording is considered, namely the super-resolution near-field structure. This technique, used in combination with multicomponent Te-based chalcogenides as a recording medium, is believed to be a prototype for future optical-storage devices.     

激光致溅射沉积Ge2Sb2Te5薄膜的结晶行为研究

利用ＸＲＤ研究了激光致溅射沉积Ｇｅ_２Ｓｂ_２Ｔｅ_５薄膜的结晶行为;研究发现,与热致相变不同的是,激光致相变只发生从非晶态到ＦＣＣ晶态结构的转变,从ＦＣＣ到ＨＣＰ的结构转变不再发生,这有利于提高相变光盘的信噪比．Ｇｅ_２Ｓｂ_２Ｔｅ_５薄膜的结晶程度受初始化功率和转速的影响．     

Preparation and heat storage/release behavior of latent heat storage gypsum-based building materials

A new method to manufacture gypsum-based building materials with high latent heat storage capability is described. When expanded graphite is used as the adsorption medium for butyl stearate, an organic/inorganic phase-change composite is formed. This composite can be mixed with gypsum to manufacture a latent heat storage gypsum-based building material. Differential scanning calorimetry (DSC) test results indicate that the phase-change enthalpy value of this composite is similar to that of pure butyl stearate and that it therefore displays good thermophysical properties. We found that a mixture of gypsum with this composite should contain no more than 5 % of the latter to maintain the workability of the paste. The hardened gypsum–composite material exhibits some defects in the interface between the phase-change composite and the gypsum, but these do not seriously affect the strength of the gypsum product. The results of a temperature cycle test illustrate that gypsum containing 5 % phase-change composite can deliver high-performance heat storage/release. This characteristic of the composite will improve the inertia of ambient temperature fluctuations, making it applicable as a new building product that will conserve energy.     

Highly scalable non-volatile and ultra-low-power phase-change nanowire memory

The search for a universal memory storage device that combines rapid read and write speeds, high storage density and non-volatility is driving the exploration of new materials in nanostructured form. Phase-change materials, which can be reversibly switched between amorphous and crystalline states, are promising in this respect, but top-down processing of these materials into nanostructures often damages their useful properties. Self-assembled nanowire-based phase-change material memory devices offer an attractive solution owing to their sub-lithographic sizes and unique geometry, coupled with the facile etch-free processes with which they can be fabricated. Here, we explore the effects of nanoscaling on the memory-storage capability of self-assembled Ge2Sb2Te5 nanowires, an important phase-change material. Our measurements of write-current amplitude, switching speed, endurance and data retention time in these devices show that such nanowires are promising building blocks for non-volatile scalable memory and may represent the ultimate size limit in exploring current-induced phase transition in nanoscale systems.     

Study on Heat Transfer Characteristics of Phase-Change Energy Storage Unit for Thermal Management

The objective of the study was to investigate the heat transfer characteristics of a phase-change energy storage unit for thermal management. Considering the conduction in the solid and natural convection in the liquid, a physical and mathematical model for heat transfer was formulated. The governing conservation equations were solved using the finite-volume method on fixed grids. An enthalpy-porosity method was used for modeling the melting phenomenon of a phase-change energy storage unit. The time and space movement of the phase front, the temperature distribution, and the heat dissipation rate have been analyzed based on the model. The influence of the unit geometry, heat source location, and types of phase-change materials on the thermal performance of the energy storage unit were investigated. The model and numerical method were evaluated by comparing the numerical predictions with the experimental results. There was found to be excellent agreement between the calculation and experiment, indicating that the numerical method for heat transfer simulation of a phase-change energy storage unit is accurate. The results from the analysis elucidate the thermal performance of the phase-change energy storage unit and will provide the basis for the design and optimization of thermal management systems.     

Ultra-high-density phase-change storage and memory

Phase-change storage is widely used in optical information technologies (DVD, CD-ROM and so on), and recently it has also been considered for non-volatile memory applications. This work reports advances in thermal data recording of phase-change materials. Specifically, we show erasable thermal phase-change recording at a storage density of 3.3 Tb inch(-2), which is three orders of magnitude denser than that currently achievable with commercial optical storage technologies. We demonstrate the concept of a thin-film nanoheater to realize ultra-small heat spots with dimensions of less than 50 nm. Finally, we show in a proof-of-concept demonstration that an individual thin-film heater can write, erase and read the phase of these storage materials at competitive speeds. This work provides important stepping stones for a very-high-density storage or memory technology based on phase-change materials.     

空气源热泵机组冬季除霜热量补偿新方法

空气源热泵机组在冬季运行时,由于机组需要不断除霜,将导致机组供热能力不足、室内吹冷风、房间热舒适性下降等问题出现。为此,提出了一种利用相变蓄热技术解决空气源热泵机组冬季除霜问题的新途径。其基本原理是,将笔者研制的填充了DX40相变材料板的新型蓄热装置与空气源热泵机组相连接,当热泵机组在制热工况运行时,热泵机组向空调系统供热的同时也向相变蓄热装置蓄热;当热泵机组转换至除霜工况运行时,相变蓄热装置向空调房间放热,在提高房间热舒适性的同时,缩短热泵机组除霜时间,提高机组工作效率。试验结果表明,该相变蓄热装置应用于空气源热泵机组冬季除霜性能的优良性。     

Phase-change materials for rewriteable data storage

Phase-change materials are some of the most promising materials for data-storage applications. They are already used in rewriteable optical data storage and offer great potential as an emerging non-volatile electronic memory. This review looks at the unique property combination that characterizes phase-change materials. The crystalline state often shows an octahedral-like atomic arrangement, frequently accompanied by pronounced lattice distortions and huge vacancy concentrations. This can be attributed to the chemical bonding in phase-change alloys, which is promoted by p-orbitals. From this insight, phase-change alloys with desired properties can be designed. This is demonstrated for the optical properties of phase-change alloys, in particular the contrast between the amorphous and crystalline states. The origin of the fast crystallization kinetics is also discussed.     

界面聚合法制备微胶囊相变材料的试验研究

以相变石蜡为芯材,廉价的聚脲和聚氨酯为壁材,采用界面聚合法制备了单层和双层壁材微胶囊相变材料,并用差示扫描量热仪(DSC)和TG分析仪分别对所制备的单层壁材微胶囊和双层壁材微胶囊进行了测试.结果表明,与同条件下制备的单层壁材微胶囊相比,双层壁材微胶囊在合成过程中反应充分、产率较高,在室温环境下相变温度为19.02℃,且保持了较高的相变潜热(79.9J/g),适合于建筑用相变材料.     

The Energy Storage Capacity of Phase-Change Materials Based on n-Alkanes

Technical Physics Letters - Experimental data obtained by the calorimetric method enable analyzing the energy storage capacity of phase-change materials based on n-alkanes. It is shown that a set...     

Measurement of the thermal coefficients of nonreversible phase-change optical recording films

We have developed a procedure to obtain the critical temperature for the amorphous-to-crystalline phase transition as well as the thermal conductivity and the specific heat of the phase-change media of optical recording. The procedure involves estimating the thermal conductivity from the data obtained by measuring the threshold cw laser power required for inducing phase transition. Then, from the data obtained in short-pulse measurements, we estimate the specific heat. In principle this method can yield the thermal parameters of any number of layers, so long as one of the layers is made of a phase-change material having a well-defined transition temperature.     

Design rules for phase-change materials in data storage applications

Phase-change materials can rapidly and reversibly be switched between an amorphous and a crystalline phase. Since both phases are characterized by very different optical and electrical properties, these materials can be employed for rewritable optical and electrical data storage. Hence, there are considerable efforts to identify suitable materials, and to optimize them with respect to specific applications. Design rules that can explain why the materials identified so far enable phase-change based devices would hence be very beneficial. This article describes materials that have been successfully employed and dicusses common features regarding both typical structures and bonding mechanisms. It is shown that typical structural motifs and electronic properties can be found in the crystalline state that are indicative for resonant bonding, from which the employed contrast originates. The occurence of resonance is linked to the composition, thus providing a design rule for phase-change materials. This understanding helps to unravel characteristic properties such as electrical and thermal conductivity which are discussed in the subsequent section. Then, turning to the transition kinetics between the phases, the current understanding and modeling of the processes of amorphization and crystallization are discussed. Finally, present approaches for improved high-capacity optical discs and fast non-volatile electrical memories, that hold the potential to succeed present-day's Flash memory, are presented.     

定形相变蓄热单元周期性释热实验分析

针对相变蓄热材料实际应用中的周期性释热情况,本文采用响应面法设计实验方案,对一种基于圆环形赤藻糖醇/膨胀石墨复合相变材料的间接式蓄热器进行周期性释热实验.利用蓄热材料的释热量、释热动力、有效能利用率对蓄热单元的释热性能进行分析.结果表明:当间歇时间为20 min,材料累计释热时间为40 min,总释热功率、斯蒂芬数、火...     

蓄冷箱在疫苗冷链中的研究进展

每年疫苗产品损耗的主要因素之一是冷链运输的失效,在运输过程中使用最为普遍的设备是蓄冷箱。影响蓄冷箱保温性能的因素主要包括保温箱体的绝热性能、蓄冷材料的蓄冷能力及保温包装方式的设计。本文综述了蓄冷箱在疫苗冷链中的研究进展,分析了疫苗蓄冷箱常用保温材料及相变蓄冷材料的选择和应用,并讨论了箱体热阻的计算及蓄冷箱温度的监控。在此基础上指出整体包装和开发相变蓄冷材料的研究方向。     

熔融自发浸渗制备多孔陶瓷复合相变储能材料

研究了融盐Na2SO4与石英质多孔陶瓷预制体的自发熔融浸渗制备工艺,成功地制备出无机盐/陶瓷基(Na2SO4/SiO2)复合相变储能材料,观察和分析了该材料的物相组成与显微结构特征,对该材料的各项热物理性能和机械性能进行了测量.结果表明:自发熔融浸渗工艺比混合烧结工艺更适合于制备无机盐陶瓷基复合相变储能材料.     

Solution-phase deposition and nanopatterning of GeSbSe phase-change materials

Chalcogenide films with reversible amorphous-crystalline phase transitions have been commercialized as optically rewritable data-storage media, and intensive effort is now focused on integrating them into electrically addressed non-volatile memory devices (phase-change random-access memory or PCRAM). Although optical data storage is accomplished by laser-induced heating of continuous films, electronic memory requires integration of discrete nanoscale phase-change material features with read/write electronics. Currently, phase-change films are most commonly deposited by sputter deposition, and patterned by conventional lithography. Metal chalcogenide films for transistor applications have recently been deposited by a low-temperature, solution-phase route. Here, we extend this methodology to prepare thin films and nanostructures of GeSbSe phase-change materials. We report the ready tuneability of phase-change properties in GeSbSe films through composition variation achieved by combining novel precursors in solution. Rapid, submicrosecond phase switching is observed by laser-pulse annealing. We also demonstrate that prepatterned holes can be filled to fabricate phase-change nanostructures from hundreds down to tens of nanometres in size, offering enhanced flexibility in fabricating PCRAM devices with reduced current requirements.     

地板辐射采暖相变蓄热材料及系统形式的研究

随着人们生活水平的提高,人们对冬季室内环境的舒适性也要求越来越高。相对于传统的采暖模式,地板辐射采暖逐渐以其舒适性和安全性为大家所接受。本文主要讨论了地暖的系统形式、相变蓄热材料以及管道的铺设方式等。     

Unusual phase transitions in two-dimensional telluride heterostructures

Phase-change heterostructure (PCH) holds great promise for overcoming the low-precision bottleneck that limits multibit storage and parallel computing in conventional phase-change random-access memory. However, the origin of high-accuracy control of electrical resistance achieved in programming PCH memory devices has yet to be established. Via in situ transmission electron microscopy, here we unveil the unusual microscopic processes during the order–disorder phase transitions driven by electrical pulse in a Sb₂Te₃/TiTe₂ PCH architecture. The template-modulated phase transition is confirmed to be two-dimensional (2D) in nature. The structural transformation path and dynamics in the confined Sb₂Te₃ sublayers are found to be profoundly changed with respect to those in bulk monolithic Sb₂Te₃, leading to markedly suppressed amorphous relaxation and substantially reduced crystallization stochasticity, both highly desirable for swift and accurate device operations. Our atomic-scale observations provide direct evidence of, and much-needed insight into, the working mechanisms that may enable superior 2D phase-change electronic devices.