Growth and vacuum post-annealing effect on the properties of the new absorber CuSbS2 thin films

Post-growth treatments in vacuum atmosphere were performed on CuSbS₂ films prepared by the single-source thermal evaporation method on glass substrates. The films were annealed in vacuum atmosphere for 2 h in temperature range 130-200 °C. The effect of this thermal treatment on the structural, optical and electrical properties of the films was studied. X-ray diffraction (XRD) patterns indicated that the films exhibited an amorphous structure for annealing temperature below 200 °C and a polycrystalline structure with CuSbS₂ principal phase. For the films annealed at temperatures below 200 °C one direct optical transition in range 1.8-2 eV was found. For the films annealed at 200 °C, two optical direct transitions emerged at 1.3 and 1.79 eV corresponding to the CuSbS₂ and Sb₂S₃ values respectively. The electrical measurements showed a conversion from low resistivities (3.10^− 2-9.10^− 2) Ω cm for the samples annealed at temperatures below 200 °C to relatively high resistivities (2 Ω cm) for the samples annealed at 200 °C. In all cases the samples exhibited p-Ztype conductivity.     

Optical and structural properties of CuSbS2 thin films grown by thermal evaporation method

Structural, optical and electrical properties of CuSbS₂ thin films grown by thermal evaporation have been studied relating the effects of substrate heating conditions of these properties. The CuSbS₂ thin films were carried out at substrate temperatures in the temperature range 100-200 °C. The structure and composition were characterized by XRD, SEM and EDX. X-ray diffraction revealed that the films are (111) oriented upon substrate temperature 170 °C and amorphous for the substrate temperatures below 170 °C. No secondary phases are observed for all the films. The optical absorption coefficients and band gaps of the films were estimated by optical transmission and reflection measurements at room temperature. Strong absorption coefficients in the range 10⁵-10⁶ cm^− 1 at 500 nm were found. The direct gaps Eg lie between 0.91-1.89 eV range. It is observed that there is a decrease in optical band gap Eg with increasing the substrate temperature. Resistivity of 0.03-0.96 Ω cm, in dependence on substrate temperature was characterized. The all unheated films exhibit p-type conductivity. The characteristics reported here also offer perspective for CuSbS₂ as an absorber material in solar cells applications.     

Structural, morphological and optical properties of thermal annealed TiO thin films

Structural, morphological and optical properties of TiO thin films grown by single source thermal evaporation method were studied. The films were annealed from 300 to 520 °C in air after evaporation. Qualitative film analysis was performed with X-ray diffraction, atomic force microscopy and optical transmittance and reflectance spectra. A correlation was established between the optical properties, surface roughness and growth morphology of the evaporated TiO thin films. The X-ray diffraction spectra indicated the presence of the TiO₂ phase for the annealing temperature above 400 °C.     

Degradation of thin films of YBa2Cu3O7 by annealing in air and in vacuum

The degradation of epitaxial thin films of YBa₂Cu₃O₇ has been studied as a function of annealing temperature in air and in vacuum; some samples had an evaporated overlayer of CaF₂. Degradation was monitored by the measurement of electrical properties after consecutive 30-min annealing treatments. The room-temperature resistance registered significant increases for all samples after annealing at temperatures above about 200°C; the critical current density at 77 K was degraded for annealing temperatures 400°C in air, and 200–250°C in vacuum. By annealing in oxygen at 550°C, electrical properties were restored in degraded bare YBCO samples annealed in vacuum, but not for those annealed in air.     

The effect of sputtering gas pressure on structure and photocatalytic properties of nanostructured titanium oxide self-cleaning thin film

Titanium oxide thin films were deposited by DC reactive magnetron sputtering on ZnO (80 nm thickness)/soda-lime glass and SiO₂ substrates at different gas pressures. The post annealing on the deposited films was performed at 400 °C in air atmosphere. The results of X-ray diffraction (XRD) showed that the films had anatase phase after annealing at 400 °C. The structure and morphology of deposited layers were evaluated by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The surface grain size and roughness of TiO₂ thin films after annealing were around 10-15 nm and 2-8 nm, respectively. The optical transmittance of the films was measured using ultraviolet-visible light (UV-vis) spectrophotometer and photocatalytic activities of the samples were evaluated by the degradation of Methylene Blue (MB) dye. Using ZnO thin film as buffer layer, the photocatalytic properties of TiO₂ films were improved.     

Structural and optical studies of nanocrystalline V2O5 thin films

We report the structural and optical properties of nanocrystalline thin films of vanadium oxide prepared via evaporation technique on amorphous glass substrates. The crystallinity of the films was studied using X-ray diffraction and surface morphology of the films was studied using scanning electron microscopy and atomic force microscopy. Deposition temperature was found to have a great impact on the optical and structural properties of these films. The films deposited at room temperature show homogeneous, uniform and smooth texture but were amorphous in nature. These films remain amorphous even after postannealing at 300 °C. On the other hand the films deposited at substrate temperature T_S > 200 °C were well textured and c-axis oriented with good crystalline properties. Moreover colour of the films changes from pale yellow to light brown to black corresponding to deposition at room temperature, 300 °C and 500 °C respectively. The investigation revealed that nanocrystalline V₂O₅ films with preferred 001 orientation and with crystalline size of 17.67 nm can be grown with a layered structure onto amorphous glass substrates at temperature as low as 300 °C. The photograph of V₂O₅ films deposited at room temperature taken by scanning electron microscopy shows regular dot like features of nm size.     

The effect of heat treatment on physical properties of nanograined (WO3)1-x-(Fe2O3)x thin films

Thin films of (WO₃)_1-x-(Fe₂O₃)_x composition were deposited by thermal evaporation on glass substrates and then all samples were annealed at 200-500 °C in air. Optical properties such as transmittance, reflectance, optical bangap energy, and the optical constants of the “as deposited” and the annealed films were studied using ultraviolet-visible spectrophotometry. It was shown that the annealing process changes the film optical properties which were related to Fe₂O₃ concentration. Moreover, using X-ray photoelectron spectroscopy, we have indicated that WO₃ is stoichiometric, while iron oxide was in both FeO and Fe₂O₃ compositions so that the FeO composition converted to Fe₂O₃ after the annealing process. Using atomic force microscopy, it was observed that surface of the “as deposited” films were smooth with a nanometric grain size. The film surface remained unchanged after annealing up to 300 °C. Surface roughness and the grain size of the films with x = 0, 0.05, and 0.75 highly increased at higher annealing temperatures (400 and 500 °C), but were nearly unchanged for medium x-values (0.3 and 0.4).     

Nanocrystalline SnO2 and Au:SnO2 thin films prepared by direct current magnetron reactive sputtering

Nanocrystalline pure and gold doped SnO₂(Au:SnO₂) films were prepared on unheated glass substrates by dc magnetron reactive sputtering and, subsequently, the as deposited films were annealed in air. The films structure, surface morphology, photoluminescence, electrical and optical properties were investigated. After annealing the as deposited SnO₂ films, crystallinity increased and the surface roughness decreased. The intensity of PL peaks increases sharply with the annealing temperature. The optical transmittance of the films was around 89% after annealing the as deposited SnO₂ films at 450 °C. The as deposited Au:SnO₂ films show better crystallinity than the as deposited SnO₂ films, the average grain size was around 4.4 nm. The emission peaks of Au:SnO₂ films are slightly blue shifted as compare to undoped SnO₂ films. The Au:SnO₂ films show the lowest electrical resistivity of 0.001 Ωcm with optical transmittance of 76%, after annealing at 450 °C.     

Preparation of CuAlO2 and CuCrO2 thin films by sol-gel processing

CuAlO₂ and CuCrO₂ thin films were prepared by sol-gel processing and subsequent thermal treatment in air and inert gas atmosphere. Resistivities of 700 Ω cm and 60 Ω cm with optical transmissions of 65% and 32% were achieved respectively. The crystallization temperature of 700 °C allows the preparation of CuCrO₂ on borosilicate glass. P-type conductivity was verified by Seebeck measurements and a transparent heterostructure including p-CuCrO₂ showed rectifying behavior.     

Thermal treatment effect on the optical properties of ZrO2 thin films deposited by thermionic vacuum arc

This paper shows the ex situ thermal treatment effects of the ZrO₂ thin films obtained by TVA (thermionic vacuum arc) technique on the optical properties (e.g., transmittance, refractive index and band-gap energy) of ZrO₂ thin films. The crystal structure, surface and optical properties were investigated for ZrO₂ thin films deposited on glass substrates by thermionic vacuum arc (TVA) method. The thermal treatment effect on the optical properties of the thin films was determined. The XRD analysis showed that the deposited ZrO₂ thin films have baddeleyite (monoclinic) and zirconium (hexagonal) structures. The thicknesses and refractive index were determined by interferometric measurements. The thin films were thermal treated at different temperatures (350 °C, 450 °C and 550 °C), and the analysis showed that the optical properties of ZrO₂ deposited thin films were improved by thermal treatment at 450 °C.     

Structural investigation of thin TiO2 films prepared by evaporation and post‐heating

Thin films of TiO₂ have been prepared by reactive evaporation of Ti₂O₃ at substrate temperatures from 150 °C to 350 °C and by post‐heating at 150 °C to 850 °C. The mass density of the films increases with increasing substrate and annealing temperature. The crystalline structure of the film prepared at 350 °C is anatase and becomes rutile upon annealing at 850 °C. All other films are amorphous as‐prepared and become anatase upon annealing above 250 °C. The crystallinity is higher for films prepared at lower temperature and does not increase with annealing temperature. Coatings with reproducible optical properties are obtained when deposited and post‐annealed at 250 °C.     

Influence of annealing treatments for ZnO-doped Zr0.8Sn0.2TiO4 thin films by RF magnetron sputtering

Zirconium tin titanium oxide doped 1 wt.% ZnO thin films on n-type Si substrate were deposited by rf magnetron sputtering at a fixed rf power of 300 W, a substrate temperature of 450 °C, a deposition pressure of 5 mTorr and an Ar/O₂ ratio of 100/0 with various annealing temperatures and annealing times. Electrical properties and microstructures of 1 wt.% ZnO-doped (Zr_0.8Sn_0.2)TiO₄ thin films prepared by rf magnetron sputtering on n-type Si(100) substrates at different annealing temperatures (500 °C-700 °C) and annealing times (2 h-6 h) have been investigated. The structural and morphological characteristics analyzed by X-ray diffraction (XRD) and atomic force microscope (AFM) were sensitive to the treatment conditions such as annealing temperature and annealing time. At an annealing temperature of 600 °C and an annealing time of 6 h, the ZnO-doped (Zr_0.8Sn_0.2)TiO₄ thin films possess a dielectric constant of 46 (at f = 10 MHz), a dissipation factor of 0.059 (at f = 10 MHz), and a low leakage current density of 3.8 × 10^− 9 A/cm² at an electrical field of 1 kV/cm.     

Characterization of copper oxide thin films deposited by the thermal evaporation of cuprous oxide (Cu2O)

Thin films of copper oxide were deposited by thermal evaporation of cuprous oxide (Cu₂O) powder. The substrates were either unheated or heated to a temperature of 300 °C. The films were also annealed in air at a temperature of 500 °C for 3 h. The films were characterized by X-ray photoelectron spectroscopy, X-ray diffraction and UV-visible spectrophotometry. The effects of the substrate temperature and post-deposition annealing on the chemical, structural and optical properties of the films were investigated. As-deposited films on unheated substrates consisted of mixed cupric oxide (CuO) and Cu₂O phases, with a higher concentration of the Cu₂O phase. However, the films deposited on heated substrates and the annealed films were predominantly of the CuO phase.     

Properties of transparent conducting oxides formed from CdO alloyed with In2O3

The structure, optical and electrical properties of transparent conducting oxide films depend greatly on the methods of preparation, heat treatment, type and level of dopant. Thin films of (CdO)_1−x(In₂O₃)_x have been grown by electron beam evaporation technique for different concentrations of In₂O₃ (x = 0, 0.05, 0.1, 0.15 and 0.2). Increase of doping led to increased carrier concentration as derived from optical data and hence to increased electrical conductivity, which degraded the transparency of the films. An improvement of the electrical and optical properties of Cadmium indium oxide (CdIn₂O₄) has been achieved by post-deposition annealing. A resistivity value of 7 × 10^− 5 Ω cm and transmittance of 92% in the near infrared region and 82% in the visible region have been obtained after annealing at 300 °C for 90 min in air.     

Optical and electrical properties of heat-resistant Sb-doped Sn1 − xHfxO2 transparent conducting films

To examine variations in the transparent conducting properties after annealing at high temperatures, 300-nm thick Sb-doped Sn_1 − xHf_xO₂ (x = 0.00-0.10) films were deposited onto silica glass substrates by the RF sputtering method and annealed in air up to 1000 °C at 200 °C increments. After annealing, all the Sb-doped SnO₂ films were transparent and electrically conductive, but large cracks, which decreased the electrical conductivity, were generated in several films due to crystallization or the thermal expansion difference between the film and substrate. Only the film deposited at room temperature in an Ar and O₂ mixed atmosphere did not crack after annealing, and its electrical conductivity exceeded 100 S cm^− 1 even after annealing at 1000 °C in air. Hf-doping blue shifted the fundamental absorption edges in the UV region in the Sb-doped Sn_1 − xHf_xO₂ films. Additionally, the optical transmission at 310 nm, T₃₁₀, increased as the Hf concentration increased, whereas the electrical conductivity was inversely proportional to the Hf concentration. On the other hand, thinner films (150-nm thick) with x = 0.00 showed both a high electrical conductivity over 100 S cm^− 1 and a high transparency T₃₁₀ = 65% after high temperature annealing.     

Effect of annealing on the composition, structure and mechanical properties of carbon nitride films deposited by middle-frequency magnetron sputtering

Carbon nitride films were deposited by middle-frequency reactive magnetron sputtering and annealed at different temperatures in nitrogen ambient. X-ray photoelectron spectroscopy, Raman scattering, transmission electron microscopy, and nano-indenter were used to characterize the as-deposited and annealed films. The analysis showed that annealing resulted in the dissociation of N and C in the films. The dissociation of C happened after 500 °C and lagged behind that of N. With the increase of annealing temperature, the disorder of sp² C decreased and the films were gradually graphitized. The microstructure changed from amorphous to fullerene-like CN_x with the annealing temperature increasing to 500 °C, and then to nitridized graphite nanocrystals at 600 °C. The graphitization resulted in a drastic decreasing of hardness and modulus of the films.     

Structures and properties of titania thin films annealed under different atmosphere

The effects of crystallinity, phase and oxygen vacancies on optical and photocatalytic properties of titania (TiO₂) thin films were systematically studied. The as-deposited amorphous titania films were prepared by reactive sputtering titanium metal targets in argon–oxygen plasma at 100 °C and subsequently annealed at various temperatures of 400–800 °C in air, vacuum and H₂ atmosphere. The results indicate that in general the crystallinity of the annealed films is enhanced with the increasing annealing temperature. At the same temperature, the H₂ annealed films achieve better crystallinity but containing more oxygen vacancies than the films annealed in air and in vacuum. In H₂ or in vacuum, the concentration of oxygen vacancies in the annealed films increases with increasing temperature, while in air it remains constant. Oxygen vacancies in titania film not only facilitate phase transformation but also lower the band gap of titania, and make the film visible-light responsive. Photocatalytic properties of the TiO₂ films were characterized in UV and visible light irradiation by following the Ag reduction and degradation of methylene blue. The films annealed at 600–700 °C in H₂ possess the best film crystallinity and the proper concentration of oxygen vacancies and exhibit the best photocatalytic performance under both UV and visible light.     

Effects of deposition time and temperature on the optical properties of air-annealed chemical bath deposited CdS films

CdS films of over 1-μm thickness were deposited onto glass substrates by chemical bath deposition (CBD). Deposition temperature and time were varied from 40 °C to 60 °C and from 30 min to 4 h, respectively. The highest deposition rate, 6.39 nm/min, was obtained with samples deposited for 90 min at 60 °C. The films deposited at 60 °C for 4 h were found to have the best adhesion and without defects. The optical properties, in particular the optical band gap, depended on film thickness, the deposition and annealing temperatures. Annealing in air resulted in a shift of the absorption edge towards higher wavelengths, i.e., a decrease in the gap value from 2.45 eV to 2.38 eV. The optical band edges of the films were not constant but depended on the annealing temperature. The refractive index, calculated by applying the envelope method on the transmission of the films in wavelengths from 550 nm to 850 nm, was in the range 1.95-2.26. The resistivity determined from dark conductivity measurement, as a function of the annealing temperature, was found to be in the order of 10⁵ Ω cm for samples annealed in air at 250 °C, 3 h, and the activation energy was about 0.22 eV.     

Structural, thermal and optical characterization of TiO2:ZrO2 thin films prepared by sol-gel method

We have studied the structural and optical properties of thin films of TiO₂, doped with 5% ZrO₂ and deposited on glass substrate (by the sol-gel method). The dip-coated thin films have been examined at different annealing temperatures (350 to 450 °C) and for various layer thicknesses (63-286 nm). Refractive index and porosity were calculated from the measured transmittance spectrum. The values of the index of refraction are in the range of 1.62-2.29 and the porosity is in the range of 0.21-0.70. The coefficient of transmission varies from 50 to 90%. In the case of the powder of TiO₂, doped with 5% ZrO₂, and aged for 3 months in ambient temperature, we have noticed the formation of the anatase phase (tetragonal structure with 14.8 nm grains). However, the undoped TiO₂ exhibits an amorphous phase. After heat treatments of thin films, titanium oxide starts to crystallize at the annealing temperature 350 °C. The obtained structures are anatase and brookite. The calculated grain size, depending on the annealing temperature and the layer thickness, is in the range (8.58-20.56 nm).     

Optical properties and hydrophilic behaviors of TaOxNy thin films with and without rapid thermal annealing

TaO_xN_y thin films were prepared using DC reactive sputtering of Ta target with the variation of (O₂ + N₂)/Ar ratio, followed by rapid thermal annealing (RTA) at 800 °C for 5 min. During RTA, the amorphous structure of the as-deposited films would transform to crystallized phases that might contain either TaON, or Ta₂O_5, or both. With the increase of (O₂ + N₂)/Ar ratio, Ta₂O₅ phase becomes more dominant, while TaON was formed in an opposite way. Elemental analysis also shows the same trend. Hydrophilicity and optical properties of these films were found to be dependent on phases formed after annealing. The optical band gap was measured and calculated to be in the range of 2.43 eV (510 nm) to 3.94 eV (315 nm). The films with low band gap values exhibited super hydrophilicity behavior under visible light irradiation, mainly due to their light absorption had been extended to visible light range. Clearly, it was due to the existence of TaON phase.