Ce、V共掺杂BiFeO3多铁薄膜及其电性能研究

采用sol-gel法在Pt/Ti/SiO2/Si衬底上成功制备出纯BiFeO3(BFO)和Ce、V共掺杂Bi0.97 Ce0.03Fe1-x VxO3 (x=0,0.01,0.02,0.03)(BCFVx)薄膜.结构和形貌测试表明,Ce、V共掺杂使得BFO薄膜发生从菱方结构到伪四方结构的转变,且薄膜晶粒变小.介电性能和...     

Lattice distortion and room-temperature ferroelectric properties of (Sm, Cr) co-doped BiFeO3 thin films

Pure BiFeO₃ (BFO) and Bi_0.85Sm_0.15Fe_0.97Cr_0.03O₃ (BSFCO) thin films were prepared on FTO/glass (SnO₂: F) substrates by using a chemical solution deposition method. The effects of (Sm, Cr) co-doping on the microstructure and ferroelectric properties of the BSFCO thin films were studied. The X-ray diffraction and Raman scattering spectra proved that the co-doped BSFCO thin film has a lattice distortion compared with the pure BFO thin film. The remnant polarization (2P _r) of the BSFCO thin film was 153.67 μC/cm² at 1 kHz in the applied electric field of 1,270 kV/cm. At an applied electric field of 100 kV/cm, the leakage current density of the co-doped BSFCO thin film (2.12 × 10^?6 A/cm²) was 3 orders lower than that of the pure BFO thin film (3.8 × 10^?3 A/cm²). The improved properties of the co-doped thin film could be attributed to lattices distortion, more grain boundaries, higher binding energy of Sm–O and the mixed-valence states of Cr³⁺ and Cr ⁶⁺.     

Structure transition and enhanced ferroelectric properties of (Mn, Cr) co-doped BiFeO3 thin films

Pure BiFeO₃ (BFO) and (Mn, Cr) co-doped BiFe_0.96?yMn_0.04Cr_yO₃ thin films were prepared on FTO/glass (SnO₂:F) substrates by using a sol–gel method. The effects of (Mn, Cr) co-doped on the microstructure and electric properties of the BiFeO₃ thin films were studied. The result indicates that the co-doped BiFe_0.94Mn_0.04Cr_0.02O₃ (BFMCO) thin film has a structure transition and better ferroelectric properties compared with the pure BFO thin film. The Rietveld refined XRD patterns of BFO and BFMCO thin films conform the trigonal (R3c:H) and the biphasic (R3c:H + R3m:R) structure, respectively. The co-existence of two phases and the mixed valences of Cr^3+/6+ and Mn^2+/3+, which apparently improves the electric properties of the (Mn, Cr) co-doped BFMCO thin films. The remnant polarization (P _r) of the BFMCO thin film was 93.58 μC/cm² at 1 kHz in the applied electric field of 636 kV/cm. At an applied electric field of 100 kV/cm, the leakage current density of (Mn, Cr) co-doped BFMCO thin film is 6.2 × 10^?6 A/cm². It is about three orders much lower than that of the BFO thin film (1.43 × 10^?3 A/cm²).     

溶胶-凝胶法制备BiFeO3粉体及其表征

以硝酸铁和硝酸铋为原料,冰醋酸和乙二醇单甲醚为溶剂制备BiFeO3粉体。采用XRD,SEM,EDS,TG-DSC以及FT-IR等手段对产物的物相、形貌、结构等进行分析,研究煅烧温度和保温时间对BiFeO3粉体的影响。结果表明:BiFeO3的最佳煅烧温度为550~600℃,保温时间为0.5~1.5h。另外,在BiFeO3制备过程中对Bi含量进行过量添加处理,发现当Bi过量3%~6%时,制备出的BiFeO3粉体杂相最少。     

溶胶-凝胶法制备BiFeO3铁电薄膜的结构和特性

采用 sol gel 方法在 Pt/Ti/SiO2/Si 衬底上制备出纯相铁酸铋薄膜。采用热分析方法研究了凝胶的化学变化和析晶过程。分析讨论了退火温度对薄膜的结构和形貌的影响。并用 XRD、SEM 等手段对样品在不同温度条件退火处理后的薄膜相和形貌进行了分析。在800℃时采用层层退火方式,有效抑制 Fe价态转化,从而降低了电子波动引发的氧空位数目,制备出纯铁相高电阻率的BiFeO3 铁电薄膜,并观测到饱和电滞回线,其 Ps 和 Pr 分别为 6.9μC/cm2 和 2.8μC/cm2。     

La3+-Pr3+共掺杂纳米TiO2粉体的光催化性能

以钛酸四丁酯(TBT)为原料, 采用溶胶-凝胶法制备了纯TiO₂和La³⁺-Pr³⁺共掺杂复合粉体(La³⁺-Pr³⁺/TiO₂), 采用XRD、 UV-Vis和TEM等测试手段分析了在紫外光照射下, 以降解甲基橙为探针反应研究其可见光催化性能。结果显示: 所有样品均为锐钛矿相纳米TiO₂, 稀土元素镧和镨掺杂后TiO₂特征衍射峰宽化, 强度降低; 与纯TiO₂、 镧掺杂TiO₂与镨掺杂TiO₂相比, 光催化剂La³⁺-Pr³⁺共掺杂TiO₂颗粒的粒径更小, 比表面积更大, 光吸收边红移程度更显著; 与未掺杂和单一掺杂的TiO₂相比较, 共掺杂的TiO₂具有更高的可见光催化性能。当La³⁺与TiO₂和Pr³⁺与TiO₂的摩尔比分别为1.0%和0.2%时, 可见光催化性能最好。可见光催化性能的提高归因于镧和镨的协同作用。     

Synthesis and characterisation of In(OH)3 and In2O3 nanoparticles by sol-gel and solvothermal methods

Indium hydroxide nanostructures were synthesised by sol-gel and hydrothermal processes from indium acetate and sodium hydroxide as precursors and polyvinyl alcohol, polyvinyl pyrrolidone or polydimethylsiloxane as stabilisers. Calcination of the In(OH)₃ nanostructures at 500°C in air yielded In₂O₃ nanoparticles. The morphology, crystallinity and thermal behaviour of the obtained products of each method were investigated by X-ray diffraction, scanning electron microscopy and thermal gravimetry analysis and differential thermal analysis.     

LaAlO_3顶层对Pb(Zr,Ti)O_3薄膜微结构和性能的影响

利用脉冲激光沉积(PLD)法,在LaAlO3(LAO)基片上外延生长了高质量的PbZr0.52Ti0.48O3(PZT)薄膜。通过增加10nm厚的LAO顶层,所制备PZT薄膜的铁电剩余极化(Pr)由28.8μC/cm2增加为55.1μC/cm2。通过对微结构分析,表明薄膜电学性能的增强主要来源于LAO顶层对PZT薄膜表面形貌的优化。另外,与Pr不同,随LAO顶层厚度的增加,PZT薄膜的矫顽场单调增加。     

稀土掺杂TiO2光催化材料的制备和性能

采用溶胶-凝胶法制备了5种稀土（Pr、Nd、Sm,Eu、Dy）掺杂TiO2光催化薄膜,研究了稀土掺杂量,镀膜层数、烧结温度和烧结时间对光催化活性的影响．结果表明,各因素对材料的催化活性均存在一最佳值．薄膜中仅含TiO2而未见稀土氧化物,除掺锴TiO2薄膜完全由金红石相组成外,其余均由锐钛矿相和金红石相的混晶组成,其中金红石相所占比例较大,薄膜表面均存在大量缺陷;稀土掺杂TiO2薄膜对罗丹明B的光降解率可达89．3％．稀土掺杂TiO2显著提高了TiO2对可见光的响应能力,提高了材料的光催化活性．     

Synthesis,characterisation and structural studies of Rb x Mn[Fe(CN)6]

We present the synthesis and detailed characterisation of the Rb _x Mn[Fe(CN)₆] compound. The composition of the material significantly depends on the applied preparative conditions. Analysis of spectroscopic results (EDX,?Raman) and X-ray powder diffraction data yielded a further assessment of the difference in structural features. The characteristic individual magnetic behaviour, as well as the metal-to-metal charge transfer capabilities of the various samples, could be related to significant changes within the structures that appear to be associated with the synthetic method used.     

Hydrothermal synthesis,characterisation and photocatalytic properties of BiOIO3 nanoplatelets

In this work, BiOIO₃ nanoplatelets were successfully prepared by a simple hydrothermal method. The as-prepared samples were characterised by energy-dispersive spectroscopy, scanning electron microscopy, high-resolution transmission electron microscopy, X-ray powder diffraction and ultraviolet visible diffuse reflectance spectroscopy. The photocatalytic activities of the as-prepared BiOIO₃ nanoplatelets were evaluated by photodegradation of rhodamine B (RhB) under simulated solar light. The results showed that the change of temperature within a certain range has almost no influence on the morphology and size of BiOIO₃ nanoplatelets. However, it had an obvious effect on the photocatalytic performance of BiOIO₃ nanoplatelets. The results showed that the BiOIO₃ sample synthesised at 130 °C exhibited the highest photocatalytic activities compared to others, with RhB completely decomposed in 80 min. The products with proper crystallinity formed at 130 °C have the optimal rate of RhB photodegradation. It indicated that the most favourable crystallinity made it beneficial to improve the photocatalytic activity. The possible mechanism of the photocatalytic reaction based on deep analysis and the experimental results was discussed in detail.     

Structural distortion and enhanced ferroelectric properties of Tb and Cr co-doped BiFeO3 thin films

BiFeO₃ and Bi_0.92Tb_0.08Fe_1?xCr_xO₃ (BTFCO) thin films were successfully prepared on SnO₂: F (FTO)/glass substrates by a chemical solution deposition technique. The influences of Tb and Cr co-doping on the structure, the leakage current, charge defects, the dielectric and the ferroelectric properties of the BTFCO thin films were investigated systematically. X-ray diffraction and Raman spectra results clearly reveal the structural distortion in the co-doped thin films. The X-ray photoelectron spectroscopy measurements show the absence of Fe²⁺ ions indicating the suppression of oxygen vacancies due to Tb and Cr co-doping. The electrical conduction mechanism of the BTFCO thin film is dominated by the Ohmic conduction in the low resistance state and trap-controlled space charged limited current in the high resistance state. With 8 %Tb and 1 %Cr co-doping, the film exhibits the superior ferroelectric (2P _r  = 105 μC/cm²) and dielectric properties. All the results show the film is very promising in the practical application.     

溶胶凝胶法0.5PbTiO_3/0.5NiFe_2O_4两相复合陶瓷的制备

通过sol-gel原位复合方法制备了两相比例为1∶1的铁电PbTiO3(PTO)/铁磁NiFe2O4(NFO)复合粉末以及陶瓷材料,利用XRD对复合体系的物相结构进行了研究,利用SEM对复相粉体及陶瓷的形貌进行了观察,采用阻抗分析仪(Agilent 4294A)测试了复合陶瓷的介电性能以及磁性能。结果表明,在550℃热处理温度下制备的原料粉末形成了PbO相及少量PTO和NFO相,650~700℃下形成了PTO和NFO两相,750℃以上则形成PTO、NFO和PbFe12O19(PFO)三相,热处理时间则对粉末形成影响不大。不同的原料粉末在1150℃下烧结后均形成了PTO和NFO两相均匀分布的复相陶瓷。控制在粉末先驱体中预先形成需要的两相,并控制相对较高的PTO相含量,可得到介电性能相对较好的陶瓷。控制相对较低的原料粉末制备温度,抑制PTO相在原料粉末中的形成,有利于得到较好磁性能的复相陶瓷,也即控制原料中的晶相形成,可以调节这种铁电铁磁两相复合陶瓷的性能。     

水热法合成Bi25FeO40纳米粉体的研究

本文以Fe(NO3)39H2O和Bi(NO3)35H2O为起始物料,NaOH为沉淀剂和矿化剂,利用水热合成技术制备了Bi25FeO40纳米粉体.利用XRD、SEM和TEM等分析测试手段对所制得Bi25FeO40粉体的物相组成和晶粒形貌等性质进行了研究,并详细讨论了水热反应温度、反应时间和矿化剂浓度等对晶体生长和粉体制备的影响.结果表明,采用这种低温水热技术制备出的产品为纯的Bi25FeO40陶瓷粉体,在微观结构上呈现出三角锥和立方体结构,最佳工艺条件为[Fe]=[Bi]=0.2mol/L,矿化剂[NaOH]=0.5mol/L,在180℃水热反应24h.     

Ti掺杂BiFeO3陶瓷的结构和铁电性能研究

用固相反应法制备了BiFe_1-xTi_xO₃(BFTxO)陶瓷样品,研究了不同Ti掺杂量对BFO陶瓷结构、形貌、铁电性能和铁电-顺电相变温度(T_c)的影响. XRD结果表明,当Ti含量x从0增大到0.2,相的结构由菱方钙钛矿逐渐变为斜方结构. Raman光谱的测试和模拟也证实了掺Ti后晶体结构有向三斜晶系转变的趋势. I-V曲线说明Ti掺杂显著降低了BFO陶瓷的漏电流,当Ti掺杂量为0.05时,漏电流最小,在100V电压下,漏电流密度为7.3×10^－6A/cm². Ti掺杂还增强了BFO陶瓷的铁电性,Ti掺杂量为0.05时的剩余极化强度甚至是纯BFO的两倍. 另外,DTA测试显示,Ti掺杂能影响BFO的铁电顺电相变温度. 随着Ti掺杂量的增加,铁电顺电相变温度逐渐降低.     

Er-Ce共掺杂TiO2纳米粉体的制备及光催化性能研究

采用溶胶-凝胶法制备了Er-Ce共掺杂的TiO2纳米粉体，并以亚甲基蓝溶液为目标降解物研究了掺杂纳米TiO2粉体在紫外光作用下的光吸收和光催化性能。采用TG-DTA、XRD和TEM等测试技术对样品的晶型、形貌和粒径尺寸进行了表征。结果表明，Er-Ce共掺杂的TiO2粉体最佳热处理温度为550℃，结晶完整、主晶相为锐钛矿型，平均粒径约为20nm；掺杂可使TiO2吸收带发生红移，光催化性能增强；共掺杂体系的最佳量为n（Er）：n（TiO2）=0．1％，n（Ce）：n（TiO2）=0．05％。此掺杂量的TiO2粉体对亚甲基蓝有良好的降解效果，反应2h降解效果达到92．37％，优于同等条件下制备的未掺杂的纯TiO2粉体。掺杂复合光催化剂对亚甲基蓝的降解遵循一级动力学方程。     

退火温度对Sol-gel法制备的BiFeO3薄膜结构及电性能的影响

采用溶胶-凝胶法在ITO/glass衬底上制备了BiFeO3薄膜,退火温度分别为500℃和550℃.实验结果表明,550℃退火的薄膜晶粒较大且不均匀,并有杂相产生,薄膜的漏电流较大,没有得到饱和的电滞回线;而在500℃退火的薄膜晶粒较小且均匀,没有杂相产生,相对于550℃退火的薄膜,其漏电流密度降低了约2个数量级,铁电性得到明显增强,剩余极化强度约为40μC/cm2,矫顽场约为75kV/cm,最大的测试电场为130kV/cm.     

Sol-gel法制备多铁性Bi_(0.85)Eu_(0.15)FeO_3薄膜及其性能

采用Sol-gel法在Pt/Ti/SiO2/Si衬底上制备了Bi0.85Eu0.15FeO3薄膜。研究了退火温度对其晶相形成的影响,发现在较低温度退火(450℃)时,Bi0.85Eu0.15FeO3晶相开始形成,但存在杂相,而且结晶度较差;在490～600℃可以获得结晶较好的单相Bi0.85Eu0.15FeO3薄膜。同时对经550℃退火的薄膜的介电、铁电和铁磁性能进行了研究,结果表明,Bi0.85Eu0.15FeO3薄膜具有较好的介电及铁磁性能。当测试频率为1MHz时,薄膜的介电常数和介电损耗分别为80、0.024,饱和磁化强度约为26.2emu/cm3。     

Sol-gel法制备Pb(Zr0.53Ti0.47)O3铁电薄膜

利用Sol-gel工艺在Pt/Ti/SiO2/Si衬底上制备了Pb(Zr0.53Ti0.47)O3(PZT)薄膜,研究了退火温度、保温时间和薄膜厚度对其晶相、微观结构和铁电性能的影响.在500℃退火处理的PZT薄膜开始形成钙钛矿相;在550℃退火处理的PZT薄膜基本形成钙钛矿相结构;升高退火温度(500～850℃)、延长保温时间(30～150min)、增加薄膜厚度(120～630nm)都有利于PZT晶粒的长大.在650～750℃退火的PZT薄膜具有较好的铁电性能,保温时间对PZT薄膜的铁电性能影响不大,PZT薄膜的厚度为200～300nm时可以得到比较好的铁电性能.在退火温度750℃、保温时间30min条件下退火处理厚310nm的PZT薄膜,其剩余极化值(2Pr)和矫顽电场(2Ec)分别是72μC/cm2、158kV/cm.