0FDM系统中的一种自适应预失真器

对OFDM传输系统中大功率放大器非线性失真的数字自适应预失真技术进行了研究。利用有理双线性函数的非线性能较好地逼近大功率放大器的AM-AM或AM-PM非线性特性及其逆变换易于求解的特性，提出了一种新的数字自适应预失真方法，它是对估计器的输入幅度进行均匀量化，用一个估计器对大功率放大器的非线性特性进行估计，通过训练估计器的参数去调节预失真器的非线性参数，以达到预失真补偿的目的。与以前的方法比较，该方法用于正交频分复用(OFDM)系统中具有收敛速度快、系统性能稳定、补偿效果好等特点。     

基于放大器非线性拟合的自适应预失真技术

本文提出了一种新的有效的大功率放大器非线性失真的数字自适应预失真设计方法。该方法基于有理双线函数的非线性及其逆变换易于求解的特性，设计大功率放大器的估计器以逼近大功率放大器的非线性特性，预失真器的非线性参数由估计器的逼近函数逐段取逆变换来调节，以达到预失真补偿的目的。计算机仿真结果表明：该方法用于正交频分复用（OFDM）系统中具有收敛速度快、系统性能稳定、补偿效果好等特点。     

基于大功率放大器估计器的自适应预失真技术

本文提出了一种用于正交频分复用（OFDM）系统中由大功率放大器引起的非线性失真的有效的数字自适应补偿方法。该方法是通过对大功率放大器的非线性特性进行分段估计,然后对其逐段取逆变换来调节大功率放大器的预失真器的非线性参数,以达到预失真补偿的目的。计算机仿真结果表明:该方法具有收敛速度快、需要动态存储器（RAM）少、补偿效果好等特点。     

OFDM功率放大器线性化快速算法

针对OFDM功率放大器线性化问题,本文采用数字预失真的方法来补偿功率放大器的非线性失真。预失真器采用Volterra序列来逼近,并提出一种重置BFGS算法来训练非线性预失真器。通过设定切换条件,使参数学习在梯度下降法与拟牛顿法之间切换。这既增加了新算法的数值稳定性,又可提高收敛速度。仿真采用数字基带预失真器对OFDM信号的功率放大器进行预失真,结果表明了新算法的高效性。并且,增加数字预失真模块可大大改善OFDM功率放大器的性能。      

一种自适应预失真器的实现及算法的改进

自适应数字预失真是补偿高功率放大器非线性的一种有效技术。本文基于RASCAL算法,给出了数字预失真器在OFDM系统中的实现结构,并对调整方法作了一些改进。通过仿真表明,改进的方法明显加快了收敛速度。     

OFDM系统中的自适应预失真研究

随着移动通信中线性调制方法的出现,功率放大器的线性化成为一个重要的研究课题。提出一种用于正交频分复用(OFDM)系统中补偿由功率放大器引起的非线性失真的自适应预失真方法,并基于RASCAL算法,给出数字预失真器在OFDM中的实现结构,仿真表明该算法具有收敛速度快、补偿效果好的特点。     

OFDM系统中的自适应预失真研究

随着移动通信中线性调制方法的出现，功率放大器的线性化成为一个重要的研究课题。提出一种用于正交频分复用（OFDM）系统中补偿由功率放大器引起的非线性失真的自适应预失真方法，并基于RASCAL算法，给出数字预失真器在OFDM中的实现结构，仿真表明该算法具有收敛速度快、补偿效果好的特点。     

OFDM系统中的自适应预失真研究

随着移动通信中线性调制方法的出现,功率放大器的线性化成为一个重要的研究课题.提出一种用于正交频分复用(OFDM)系统中补偿由功率放大器引起的非线性失真的自适应预失真方法,并基于RASCAL算法,给出数字预失真器在OFDM中的实现结构,仿真表明该算法具有收敛速度快、补偿效果好的特点.     

基于Wiener模型的非直接预失真线性化技术

新一代移动通信系统对于信道传输中的非线性失真十分敏感,功率放大器是产生非线性失真的主要器件。为了降低传输信号的失真程度,减小对相邻频段的用户的干扰,功率放大器的线性化技术显得尤其重要。预失真技术以其线性度好、自适应能力强、效率高等优点成为消除非线性失真的首选。在此阐述功率放大器的非线性特性和记忆效应,介绍预失真技术,利用基于Wiener模型的估计器来构成非直接预失真线性化系统,并对Wiener模型的参数识别算法进行优化。仿真实验表明此方法能有效补偿功率放大器的非线性失真和记忆效应,提高系统性能,降低开发成本。     

查找表联合记忆效应补偿技术的宽带自适应预失真算法

为了能够对记忆型功率放大器线性化处理,并能一定程度克服其记忆效应,该文介绍一种自适应数字预失真器。该数字预失真器采用查找表与记忆效应补偿技术相结合的方法,并且利用内插值方法有效减小了查找表幅度量化过程产生的误差。相比记忆多项式预失真器,这种预失真器的计算复杂度较小,却能够得到与其相近的线性化效果。基于功率放大器记忆多项式模型,利用OFDM(Orthogonal Frequency Division Multiplexing)宽带信号验证该文提出的预失真器对记忆型非线性功率放大器的良好线性化效果。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.