透明导电薄膜最佳掺杂含量的理论计算

分析了几种氧化物半导体透明导电薄膜材料的掺杂改性的实验结果,建立了薄膜材料的某一物理性能与晶体结构、制备方法和掺杂剂含量之间的联系,并给出了一个能够拟合实验曲线的抛物线方程.该方程的极值点确定了最佳掺杂含量与晶体结构和制备方法之间的定量关系,进而导出了一个最佳掺杂含量表达式.应用此表达式定量计算了铝掺杂氧化锌薄膜、锡掺杂氧化铟薄膜、锑掺杂二氧化锡薄膜等氧化物半导体透明导电薄膜材料最佳掺杂剂在不同制备方法下的最佳掺杂量.结果表明定量计算的结果与部分实验数据相符合.     

ZnO压敏陶瓷最佳掺杂含量的理论计算

从对电子薄膜材料研究中得到的最佳掺杂含量定量理论推广到ZnO陶瓷材料。该理论建立了电子薄膜材料的某一物理性能与晶体结构、制备方法和掺杂剂含量之间的联系，给出了一个能够拟合实验曲线的具有确定物理意义的抛物线方程。该方程的极值点确定了最佳掺杂含量与晶体结构和制备方法之间的定量关系，进而得到了一个掺杂最佳含量的表达式。系统地分析了ZnO压敏陶瓷的掺杂改性的实验结果，应用此表达式定量计算了ZnO压敏陶瓷的最佳掺杂含量，定量计算的结果与实验数据相符合。该理论也适用于其他薄膜材料最佳掺杂含量的理论计算。     

陶瓷材料

0224422ZnO 压敏陶瓷最佳掺杂含量的理论计算[刊]/范志新//压电与声光.—2002,24(3).—244～246(L)从对电子薄膜材料研究中得到的最佳掺杂含量定量理论推广到 ZnO 陶瓷材料。该理论建立了电子薄膜计料的某一物理性能与晶体结构、制备方法和掺杂剂含量之间的联系,给出一个能够拟合实验曲线的具有确定物理意义的抛物线方程。该方程的圾值点确定了最佳掺杂含量与晶体结构和制备方法之间的定量关     

氧化物半导体透明导电薄膜的最佳掺杂含量理论计算

以铝掺杂氧化锌 (Al- doped Zn O,简称 AZO)和锡掺杂氧化铟 (Sn- doped In2 O3,简称 ITO)薄膜为例 ,建立了一个氧化物半导体透明导电薄膜的最佳掺杂含量的理论表达式 ,定量计算的结果 AZO陶瓷靶材中铝含量的理论最佳值为 C≈ 2 .9894% (wt) ,ITO陶瓷靶材中锡含量的理论最佳值为 C≈ 10 .3114% (wt) ,与实验数据相符合 .该理论经适当的修改和解释后也适用于某些其他电子薄膜材料的最佳掺杂含量问题     

氧化物半导体透明导电薄膜的最佳掺杂含量理论计算

以铝掺杂氧化锌(A1-doped ZnO,简称AZO)和锡掺杂氧化铟(Sn-dopedIn2O3,简称ITO)薄膜为例,建立了一个氧化物半导体透明导电薄膜的最佳掺杂含量的理论表达式,定量计算的结果AZO陶瓷靶材中铝含量的理论最佳值为C≈2.9894%(wt),ITO陶瓷靶材中锡含量的理论最佳值为C≈10.3114%(wt),与实验数据相符合.该理论经适当的修改和解释后也适用于某些其他电子薄膜材料的最佳掺杂含量问题.     

A-氧化铁气敏纳米晶锡掺杂最佳含量的理论计算

应用与晶体结构和掺杂上关的最佳掺杂含量的理论表达式,对氧化铁气敏纳米晶粉体中锡掺杂最佳含量进行理论计算。定量计算的结果与实验数据相符合。该理论经适当的修改和解释后也适用于某些其他电子薄膜材料的最佳掺杂含量问题。     

二氧化锡薄膜的最佳掺杂含量理论表达式

二氧化锡薄膜应用广泛。本文讨论掺锑和掺氟的二氧化锡透明导电薄膜的最佳掺杂含量问题,建立模型并给出理论表达式,得出的最佳掺杂含量值和实验数据相符。     

Al合金布线材料Fe掺杂最佳含量的理论分析

介绍一个最佳掺杂含量表达式，应用此表达式分析计算了Al-Fe合金布线材料Fe掺杂最佳含量，定量计算的结果与实验数据基本符合。     

AZO透明导电薄膜的制备技术、光电特性及应用

AZO透明导电薄膜是一种半导体氧化物薄膜材料,具有高的载流子浓度和较大的光学禁带宽度,因而具有优异的光电性能,极具应用价值.本文介绍了AZO透明导电薄膜的晶体结构和光电特性,综述了国内外对AZO薄膜所开展的研究工作,并简要地介绍了AZO薄膜的实际应用.     

真空热处理对氧化物半导体薄膜电阻的影响

由于有些氧化物半导体,如ZnO、In_2O_3、SnO_2、ITO(铟锡氧化物)具有透明导电的性质,它们的应用也越来越广泛。例如,在太阳电池中用做透明导电电极,或作电池的顶层材料形成SIS(半导体-绝缘体-半导体)电池及作抗反射层等。但一般的纯氧化物半导体电阻很大,所以用于上述情况时,必须要经过掺杂或还原等处理,降低电阻率才能使用。为此,对SnO_2、In_2O_3、ITO以及ZnO已有很多制备方法及掺杂等处理的研究报导,并已制成1×10~(-4)Ω·cm左右的薄膜材料。但用化学喷涂热解法制备ZnO薄膜的报导较少。最近,J.Aranovich等人用喷涂法制备了ZnO薄膜,并用氢气还原法把电阻率降低到10~(-3)Ω·cm左右。     

梯度掺杂与分层退火对AZO薄膜结构与性能的影响

用sol-gel法在玻璃基片上分别制备了不同Al浓度掺杂和Al梯度掺杂的掺铝氧化锌(AZO)薄膜,并研究了分层退火和一次性退火对薄膜结构和性能的影响.结果表明:梯度掺杂与分层退火都能促进薄膜的(002)择优取向.Al掺杂摩尔分数为1.5％的薄膜和经分层退火处理的Al梯度掺杂的薄膜在395 nm处均有很强的紫外发射峰,但...     

Properties of nanostructured Al doped ZnO thin films grown by spray pyrolysis technique

Aluminium doped zinc oxide thin films were deposited on glass substrate by using spray pyrolysis technique. The X-ray diffraction study of the films revealed that the both the undoped and Al doped ZnO thin films exhibits hexagonal wurtzite structure. The preferred orientation is (002) for undoped and up to 3 at % Al doping, further increase in the doping concentration to 5 at % changes the preferred orientation to (101) direction. The surface morphology of the films studied by scanning electron microscope, reveal marked changes on doping. Optical study indicates that both undoped and Al doped films are transparent in the visible region. The band gap of the films increased from 3.24 to 3.36 eV with increasing Al dopant concentration from 0 to 5 at % respectively. The Al doped films showed an increase in the conductivity by three orders of magnitude with increase in doping concentration. The maximum value of conductivity 106.3 S/cm is achieved for 3 at % Al doped films.     

Evaluation of an Nd doping effect on characteristic properties of tin oxide

In the present work, transparent and conductive Nd doped SnO₂ thin films were deposited via spray pyrolysis. Crystallographic, morphological, optical and electrical characterizations of SnO₂ were researched as a function of Nd doping. The XRD analysis indicated the films had tetragonal cassiterite tin oxide structure and (211) preferential direction for NdTO-0, NdTO-1, NdTO-2 and NdTO-3 samples changed to (110) plane for NdTO-4 and NdTO-5 samples. The crystalline size and strain analysis were made by using a Williamson–Hall method. The SEM micrographs showed that all films had homogenously scattered pyramidal and small densely nanoparticles. The optical analysis indicated optical band gap value of undoped film increased with 1 at% Nd doping and then it decreased with more Nd content. The Hall measurements indicated that the highest electrical conductivity was obtained for 2 at% Nd doping content.     

Influence of doping with third group oxides on properties of zinc oxide thin films

The study of modifications in structural, optical and electrical properties of vacuum evaporated zinc oxide thin films on doping with III group oxides namely aluminum oxide, gallium oxide and indium oxide are reported. It was observed that all the films have transmittance ranging from 85 to 95%. The variation in optical properties with dopants is discussed. On doping the film with III group oxides, the conductivity of the films showed an excellent improvement of the order of 10³ Ω^?1 cm^?1. The measurements of activation energy showed that all three oxide doped films have 2 donor levels below the conduction band.     

超声雾化喷涂工艺及优质二氧化锡透明导电薄膜的研究

报道了采用超声雾化喷涂工艺沉积优质掺杂二氧化锡透明导电半导体薄膜的实验成果 ,选用氟作为掺杂元素 ,通过改变掺杂量和工艺参数 ,可控制薄膜的方块电阻在 1 0 Ω/□以上的范围内变化 (40 0 nm膜厚 ) ,掺氟离子二氧化锡为 n型导电半导体 ,高浓度掺杂的二氧化锡薄膜光学透过率为 87%～ 90 % (采用 550 nm单色光源测透过率 )。用 X射线衍射及扫描电子显微镜分析 ,可获得该薄膜材料的微结构、表面形貌以及薄膜组成、掺杂百分含量。该成果为大规模生产优质二氧化锡透明导电薄膜 ,提供了有效、简单的方法和装置。     

Solid‐State Approach for Fabrication of Photostable,Oxygen‐Doped Carbon Nanotubes

A novel procedure for effective fabrication of photostable oxygen‐doped single‐walled carbon nanotubes (SWCNTs) in solid‐state matrices has been developed. SWCNTs drop‐cast on various types of substrates are coated with oxide dielectric thin films by electron‐beam evaporation. Single tube photoluminescence spectroscopy studies performed at room and cryogenic temperatures reveal that such thin film‐coated tubes exhibit characteristic spectral features of oxygen‐doped SWCNTs, indicating the oxide thin film coating process leads to oxygen doping of the tubes. It is also found that the doping efficiency can be effectively controlled by the thin film deposition time and by the types of surfactants wrapping the SWCNTs. Moreover, aside from being the doping agent, the oxide thin film also serves as a passivation layer protecting the SWCNTs from the external environment. Comparing the thin film coated SWCNTs with oxygen‐doped tubes prepared via ozonolysis, the former exhibit significantly higher photostability and photoluminescence on‐time. Therefore, this one‐step deposition/oxygen‐doping procedure provides a possible route toward scalable, versatile incorporation of highly photostable oxygen‐doped SWCNTs in novel optical and optoelectronic devices.     

An analytical model for the channel electric field in MOSFET's with graded-drain structures

A simple analytical model for the lateral channel electric field in the drain region of MOSFET's with graded-drain or lightly doped drain structures is presented. The model's results agree well with two-dimensional simulations of the electric field in the drain region. Due to its simplicity, this model gives a better understanding of the mechanisms involved in reducing the electric field in the lightly doped region. Results show the impact of the length and doping concentration, assumed to be Gaussian, of the lightly doped region on the electric field. Effects of the oxide thickness and junction depth are also accounted for. In each case, there is an optimum doping concentration that minimizes the peak electric field.