一种基于BiFET工艺的高输入阻抗运算放大器

针对CMOS运算放大器存在的输入失调电压高、噪声性能差等问题,提出了一种基于双极结型场效应晶体管(BiFET)工艺的高输入阻抗运算放大器。采用P沟道JFET差分对作为输入级,实现了pA量级的极低输入偏置电流/失调电流和nV/Hz量级的极低输入噪声电压谱密度。采用双极晶体管构成的共集-共射增益级和互补推挽输出级,实现了100 dB的开环增益、10 V/μs的输出电压转换速率和10 MHz的带宽。该运算放大器适用于对微弱模拟信号的采集和放大。     

结型场效应晶体管放大器的噪声

本文通过分析结型场效应管(JFET)放大器内部不同的噪声源，首次导出了场效应管放大器在较宽频率范围内的等效输入噪声电压表达式，估算了当信号源阻抗为容性时JFET放大器的总噪声，为场效应管电路低噪声优化设计提供有力的工具。     

一款JFET低噪声前置放大器的设计

在对级联网络及结型场效应管的噪声分析基础上,采用结型场效应管等分立元件设计了一款低噪声前置放大器实用电路。并对其幅频特性、输入阻抗和等效输入噪声进行了测量,结果表明其输入阻抗高达71Mn。等效输入噪声电压为0．7nV／√Hz,是一种适合于较高内阻传感器的较理想的低噪声前置放大器电路。     

基于BJT和JFET的AGC电路的设计和实现

设计了自动增益控制电路,能够使放大电路的增益自动随信号强度的变化而调整。该电路通过采用改变BJT的直流工作状态来改变BJT的电流放大系数β,实现电阻分压以及改变JFET的栅源电压来控制放大器电阻的大小。设计的自动增益控制电路阐述了BJT分压、JFET变阻以及AGC电路的工作原理,实现了可控增益范围大约为40dB,对现实教学和应用都有很好的借鉴意义。     

Current-controlled translinear impedance converter

A current-controlled impedance converter is described which is implemented using two translinear active devices: a current conveyor with unity gain and an adjustable differential current-mode amplifier. It has low parasitic input impedance and useful properties when the amplifier gain is near unity. To characterize the circuit, SPICE simulation results are given and discussed.     

Relaxation of operational amplifier parameters after pulsed electron beam irradiation

The relaxation of operational amplifier parameters (offset voltage and differential gain) with time after pulsed electron beam irradiation has been studied as a function of total dose and amplifier type. Four types of operational amplifiers were studied viz., general purpose bipolar input (μA 741), super-beta transistor input (LM 308), JFET input (LF 356) and MOSFET input (CA 3140) from different vendors. The experiments were carried out mainly using 500 ns pulses from a Linear Accelerator. The study, the first of its kind, shows that while the electrical transient at the output of the operational amplifier recovers in a few milliseconds, relaxation of parameters can take several to several tens of seconds. This relaxation is attributed to the build up and/or anneal of damage in the oxide or at the interface of the internal transistor structures. The change and relaxation of parameters depend on operational amplifier type and total dose, and can have significant effects in certain application domains as illustrated by the response of a thermocouple amplifier after pulsed irradiation.     

Improving the bandwidth gain-independence and accuracy of the current feedback amplifier

A high-performance current feedback amplifier circuit referred to as an operational current feedback amplifier is described in this paper. The technique employed involves the incorporation of the input circuit of the current feedback amplifier in the feedback loop of an operational amplifier to reduce the input impedance at the inverting terminal of the current feedback amplifier. The new circuit possesses the gain accuracy and bandwidth of the current feedback amplifier but realizes significant improvement in bandwidth accuracy and bandwidth gain-independence. Experimentally, using AD844s, an order of magnitude reduction in bandwidth variation with changing gain was achieved in the noninverting configuration and almost complete bandwidth invariance was realized in the inverting configuration.     

Broad-band distributed amplifier impedance-matching techniques

A circuit concept is developed which allows impedance transformations to be performed over extremely broad bandwidths. The transformation is obtained by coupling one or more input or output lines of a distributed amplifier into several output or input lines, respectively. The circuit technique is demonstrated by results for an amplifier for a 1:2 impedance transformation over a 2-20-GHz bandwidth. The amplifier yields a voltage standing wave ratio (VSWR) of better than 1.7:1 into 25 Ω at the input and better than 1.5:1 into 50 Ω at the output while maintaining a gain of 9±1 dB. An application of the technique to the broadband impedance-matching problem of a laser diode driver is discussed. The circuit has a gain of 8.5±1 dB from 0.5 to 12.5 GHz and better than 10 dB return loss at both the input and output     

Ultra-Low-Noise High-Input Impedance Amplifier for Low-Frequency Measurement Applications

The design of a low-frequency high-input-impedance amplifier having probably the lowest noise ever reported is presented. The amplifier's frequency range is from about 0.07 Hz to about 110 kHz at the $-$3-dB level. The equivalent input noise voltage spectral density is about 5.6, 1.4, 0.6, and 0.5 ${hbox {nV}}/sqrt{hbox {Hz} }$ at frequencies 0.1, 1, 10, and 1000 Hz, respectively. Gain of the amplifier is about 83 dB. Noise analysis is made for active-type, capacitive-type, and low impedance signal sources. The contribution from different noise sources in the amplifier and JFET to the overall noise is shown.      

应用于无线传感器网络低噪声放大器的设计

本文给出一种应用于无线传感器网络射频前端低噪声放大器的设计,采用SMIC0．18μmCMOS工艺模型。在CadenceSpectre仿真环境下的仿真结果表明：该低噪声放大器满足射频前端的系统要求,在2．45GHz的中心频率下增益可调,高增益时,噪声系数为2．9dB,输入P1dB压缩点为-19．8dBm,增益为20．5dB;中增益时,噪声系数为3．6dB,输入P1dB压缩点为-15．8dBm,增益为12．5dB;低增益时,噪声系数为6．0dB,输入P1dB压缩点为-16．4dB,增益为2．2dB。电路的输入输出匹配良好,在电源电压1．8V条件下,工作电流约为6mA。     

Electronically tunable current-mode instrumentation amplifier with high CMRR and wide bandwidth

A current-mode instrumentation amplifier consists of only two current follower differential input transconductance amplifiers is proposed in this paper. The proposed circuit of instrumentation amplifier is realized without using any passive components. Thus, the proposed circuit structure is very simple and suitable to the integrated circuit technology. The input impedance is low and output impedance is high, therefore the proposed circuit is easily cascadable. The gain of the proposed instrumentation amplifier is electronically controllable. The proposed circuit also enjoys the features of high common mode rejection ratio, wide bandwidth and low power consumption. Additionally, performance of the proposed circuit is tested under process, supply voltage and temperature variations. Furthermore, another circuit of instrumentation amplifier, which is capable of providing higher differential mode gain is also shown. The non-ideal and parasitic studies are included. HSPICE simulations are performed to validate the proposed circuits of instrumentation amplifier.     

433MHz ASK接收机射频前端电路设计

设计了一款应用在433MHz ASK接收机中的射频前端电路。在考虑了封装以及ESD保护电路的寄生效应的同时,从噪声、匹配、增益和线性度等方面详细讨论了低噪声放大器和下混频器的电路设计。采用0.18μm CMOS工艺,在1.8V的电源电压下射频前端电路消耗电流10.09 mA。主要的测试结果如下:低噪声放大器的噪声系数、增益、输入P1dB压缩点分别为1.35 dB、17.43 dB、-8.90dBm;下混频器的噪声系数、电压增益、输入P1dB压缩点分别为7.57dB、10.35dB、-4.83dBm。     

Loop Gain, Input Impedance and Output Impedance of Feedback Amplifiers

Introductory treatments of feedback amplifiers commonly contain inconsistencies, or present results as universal when in fact they need qualification. Loop gain, overall gain, input impedance and output impedance are instances. A case can therefore be made for rigorous development, even in a first course, provided mathematical rigor can be combined with physical insight. A feedback factor H is first defined for ideal circumstances. The corresponding forward-path gain G has an obvious physical interpretation: the amplifier without feedback, the external source and load impedances, and the feedback network are all involved, and the form of G is such as to suggest best practice for the various feedback configurations. Stability considerations, and precise values for overall gain, sensitivity, input impedance and output impedance follow directly from GH.     

An Electrometer Amplifier with Low Input Capacitance and Large Input Dynamic Range

An electrometer amplifier has been designed for biological research with the following data: input resistance larger than 1012; input current 10-12 A; low input capacitance; and an input dynamic range from 0 to ± 7 v. The input stage consists of JFET.     

基于OPA842和OPA2356的宽带放大电路设计

宽带放大电路设计采用了美国Texas Instruments公司（一下简称TI）的OPA842和OPA2356低功耗、高速运算放大器。从电路结构方面详细论述了电路的阻抗匹配、无源衰减网络、宽带、增益的设计思路,并将该电路经过投片验证,设计出的运算放大器满足预期指标,取得了比较满意的结果。该电路具有很强应用灵活性、输入阻抗可调、过负载能力强、电路工作带宽、可靠性强等优点。在视频放大器、有源滤波器、高速数据转换器等电子系统中有着广泛的应用前景。     

New low-noise output amplifier for high-definition CCD image sensor

A new low-noise charge-coupled-device (CCD) output amplifier, the RJG detector, has been developed. The RJG detector incorporates a JFET which has an electrically floating ring-junction gate (RJG). The operating principle of the amplifier is that signal charges, transferred from the CCD into the RJG, directly modulate the drain current in the detection JFET. The performance of the detector was evaluated by operating test devices under a 37-MHz clock frequency, which is the same frequency as that for the horizontal CCD operation in the recently developed 2-million-pixel high-definition CCD image sensor. It was found that 1/f noise was reduced by introducing the JFET and that reset noise was completely eliminated by achieving complete charge transfer through the reset operation. As a result, input referred noise equivalent electrons within the 18.5-MHz baseband were reduced to 17 (electrons)     

一种新型运放相位反转保护电路

在高噪声环境下,如何抑制相位反转现象的发生,是双极型和JFET型运放在电力电子、工业控制和汽车电子等领域应用中的一个重要问题.基于运算放大器电路相位反转现象的发生机理,针对现有抑制方法的不足,提出了一种新型的相位反转保护电路.该保护电路结构紧凑,仅需3个双极型器件,且当运放输入信号处于正常共模输入范围时,对运放的性能参数,如差模信号增益、建立时间和静态功耗等,没有不利的影响.理论分析与仿真结果表明,该保护电路不仅避免了运放电路相位反转的发生,而且有效地抑制了伴随相位反转的过流现象.     

A Differential CMOS Current-Mode Variable Gain Amplifier with Digital dB-Linear Gain Control

A novel CMOS variable gain amplifier operating on current signals with a dB-linear gain control is presented. The gain control is achieved by multiplying a digitally synthesized exponentially varying control current signal by a differential input signal in the current domain. A current amplifier at the output sets the gain to the desired level. Current-mode operation allows for a reduced supply voltage by minimizing the voltage swing at the low impedance nodes of the circuit. Multiple circuit realizations for various blocks are presented allowing for designs meeting different constraints. Experimental realization of the variable gain amplifier shows the validity of the presented approach.     

A high performance monolithic In0.53Ga0.47Asvoltage-tunable transimpedance amplifier

The fabrication and performance of the first monolithically integrated In_0.53Ga_0.47As JFET voltage-tunable transimpedance amplifier for use in InP-based optoelectronic integrated circuits are reported. A narrow-gate transistor is used as an active feedback resistor. The two-stage voltage amplifier has a voltage gain of 10.7 and a bandwidth of 350 MHz. The closed-loop transimpedance of the amplifier is tunable from 10 to 24 kΩ by controlling the gate bias of the feedback transistor     

Development of GaAs monolithic power amplifiers in X-band

The design, fabrication, and performance of several GaAs FET monolithic circuits are described. These include a two-stage, four-FET push-pull amplifier that has exhibited 1.4-W output power with 12.4-dB gain at 9.0 GHz, and a three-transistor monolithic paraphase amplifier (unbalanced input, balanced output) exhibiting 6-dB small-signal gain and a 1-dB gain compression point of 20 dBm. The amplifier chips utilize monolithically fabricated inductors, capacitors, and transmission lines to accomplish on-the-chip impedance matching.