A sub‐1 V nanopower temperature‐compensated sub‐threshold CMOS voltage reference with 0.065%/V line sensitivity

We present the design of a nanopower sub‐threshold CMOS voltage reference and the measurements performed over a set of more than 70 samples fabricated in 0.18 µm CMOS technology. The circuit provides a temperature‐compensated reference voltage of 259 mV with an extremely low line sensitivity of only 0.065% at the price of a less effective temperature compensation. The voltage reference properly works with a supply voltage down to 0.6 V and with a power dissipation of only 22.3 nW. Very similar performance has been obtained with and without the inclusion of the start‐up circuit. Copyright © 2013 John Wiley & Sons, Ltd.     

Gate‐level body biasing technique for high‐speed sub‐threshold CMOS logic gates

An efficient technique for designing high‐performance logic circuits operating in sub‐threshold region is proposed. A simple gate‐level body biasing circuit is exploited to change dynamically the threshold voltage of transistors on the basis of the gate status. Such an auxiliary circuit prepares the logic gate for fast switching while maintaining energy efficiency. If 200 aJ is the target total energy per operation consumption, a two input NAND (NOR) gate designed as described here shows a delay reduction between 20% (16%) and 40% (48%), with respect to previously proposed sub‐threshold approaches. Copyright 2012 John Wiley & Sons, Ltd.     

Temperature‐dependent modeling and performance analysis of coupled MLGNR interconnects

The temperature‐dependent circuit modeling and performance in terms of propagation delay, power dissipation, and crosstalk‐induced voltage waveform at the far end of victim line of multilayer graphene nanoribbon (MLGNR) interconnects have been analyzed at 22 nm technology node. A comparative performance analysis between MLGNR interconnects with resistance estimated using temperature‐dependent model and temperature‐independent model is examined. The results obtained are also compared with capacitively coupled interconnects of copper (Cu). The results show that as the temperature is varied from 300 K to 500 K, MLGNR has lower propagation delay and power dissipation as compared to Cu for 1 mm long interconnects. It is also observed that because of the dominance of both low resistance and ground capacitance compared to Cu, MLGNR has better crosstalk‐induced delay and voltage waveforms with rise in temperature at the far end of aggressor and victim line, respectively. Further, simulated results show an average relative improvement in propagation delay of 37.24% and corresponding improvement in power dissipation of approximately 19.59% by using a temperature‐dependent model in comparison to a temperature‐independent model of MLGNR resistance with interconnect lengths varying from 200 to 1000 μm. The reduction in the time duration of victim output pulse over these interconnect lengths also shows a significant improvement of approximately 35% by using temperature‐dependent model as against temperature‐independent model of MLGNR resistance.     

A 0.008‐mm2, 35‐μW, 8.87‐ps‐resolution CMOS time‐to‐digital converter using dual‐slope architecture

This paper presents a high resolution time‐to‐digital converter (TDC) for low‐area applications. To achieve both high resolution and low circuit area, we propose a dual‐slope voltage‐domain TDC, which is composed of a time‐to‐voltage converter (TVC) and an analog‐to‐digital converter (ADC). In the TVC, a current source and a capacitor are used to make the circuit as simple as possible. For the same reason, a single‐slope ADC, which is commonly used for compact area ADC applications, is adapted and optimized. Because the main non‐linearity occurs in the current source of the TVC and the ramp generator of the ADC, a double gain‐boosting current source is applied to overcome the low output impedance of the current source in the sub‐100‐nm CMOS process. The prototype TDC is implemented using a 65‐nm CMOS process, and occupies only 0.008 mm². The measurement result shows a dynamic range with an 8‐bit 8.86‐ps resolution and an integrated non‐linearity of ±1.25 LSB. Copyright © 2016 John Wiley & Sons, Ltd.     

A numerical model for the oscillation frequency,the amplitude and the phase‐noise of MOS‐current‐mode‐logic ring oscillators

This paper presents a new model for the frequency of oscillation, the oscillation amplitude and the phase‐noise of ring oscillators consisting of MOS‐current‐mode‐logic delay cells. The numerical model has been validated through circuit simulations of oscillators designed with a typical 130 nm CMOS technology. A design flow based on the proposed model and on circuit simulations is presented and applied to cells with active loads. The choice of the cell parameters that minimize phase‐noise and power consumption is addressed. Copyright © 2009 John Wiley & Sons, Ltd.     

A 1‐Gbps reference‐less burst‐mode CDR with embedded TDC in a 65‐nm CMOS process

A reference‐less all‐digital burst‐mode clock and data recovery circuit (CDR) is proposed in the paper. The burst‐mode CDR includes a coarse and a fine time‐to‐digital converter (TDC) with embedded phase generator. A low‐power current‐starved inverter is employed as the delay unit of the fine TDC to acquire the high measurement resolution. A calibration method to diminish the inherent delay is used to reduce the quantization error of the recovery clock. The proposed CDR is fabricated in a 65‐nm CMOS process. Experiment results show that the CDR operates from 0.9 to 1.1 Gbps and have a 13‐bit consecutive identical digits (CIDs) tolerance.     

Modelling of source‐coupled logic gates

In this paper, the modelling of CMOS SCL gates is addressed. The topology both with and without output buffer is treated, and the noise margin as well as propagation delay performance are analytically derived, using standard BSIM3v3 model parameters. The propagation delay model of a single SCL gate is based on proper linearization of the circuit and the assumption of a single‐pole behaviour. To generalize the results obtained to cascaded gates, the effect of the input rise time and the loading effect of an SCL gate are discussed. The expressions obtained are simple enough to be used for pencil‐and‐paper evaluations and are helpful from the early design phases, as they relate SCL gates performance to design and process parameters, allowing the designer to gain an intuitive understanding of performance dependence on design parameters and technology. The model has been validated by comparison with extensive simulations using a 0.35‐µm CMOS process. The model agrees well with the simulated results, since in realistic cases the difference is less than 20% both for noise margin and delay. Therefore, the model proposed can be profitably used for pencil‐and‐paper evaluations and for computer‐based timing analysis of complex SCL circuits. Copyright © 2002 John Wiley & Sons, Ltd.     

Efficient output waveform evaluation of a CMOS inverter based on short‐circuit current prediction

A novel approach for obtaining the output waveform, the propagation delay and the short‐circuit power dissipation of a CMOS inverter is introduced. The output voltage is calculated by solving the circuit differential equation only for the conducting transistor while the effect of the short‐circuit current is considered as an additional charge, which has to be discharged through the conducting transistor causing a shift to the output waveform. The short‐circuit current as well as the corresponding discharging current are accurately predicted as functions of the required time shift of the output waveform. A program has been developed that implements the proposed method and the results prove that a significant speed improvement can be gained with a minor penalty in accuracy. Copyright © 2002 John Wiley & Sons, Ltd.     

A 1–6 GHz analog radio frequency power driver in 90 nm complementary metal‐oxide semiconductor technology for wireless applications

One of the most challenging subsystems for integrated radio frequency (RF) complementary metal‐oxide semiconductor (CMOS) solutions is the power amplifier. A 1–6 GHz RF power driver (RFPD) in 90 nm CMOS technology is presented, which receives signals from on‐chip RF signal chain components at ?12 dBm power levels and produces a 0 dBm signal to on‐chip or off‐chip 50 Ω loads. A unique unit cell design is developed for the RFPD to offset issues associated with very wide multi‐fingered transistors. The RF driver was fabricated as a stand‐alone sub‐circuit on a 90 nm CMOS die with other sub‐circuits. Experimental tests confirmed that the on‐chip RFPD operates up to 6 GHz and is able to drive 50 Ω loads to the desired 0 dBm power level. Spur free dynamic range exceeded 70 dB. The measured power gain was 11.6 dB at 3 GHz. The measured 1 dB compression point and input third‐order intercept point (IIP3) were ?4.7 dBm and ?0.5 dBm, respectively. Also, included are modeling, simulation, and measured results addressing issues associated with interfacing the die to a package with pinouts and the package to a printed circuit test fixture. The simulations were made through direct current (DC), alternating current (AC), and transient analysis with Cadence Analog Design Environment. The stability was also verified on the basis of phase margin simulations from extracted circuit net‐lists. Copyright © 2013 John Wiley & Sons, Ltd.     

Noise‐tolerant dynamic CMOS circuits design by using true single‐phase clock latching technique

In this paper, a true‐single‐phase clock latching based noise‐tolerant (TSPCL‐NT) design for dynamic CMOS circuits is proposed. A TSPCL‐NT dynamic circuit can isolate and filter noise before the noise enters into the dynamic circuit. Therefore, it cannot only greatly enhance the noise tolerance of dynamic circuits but also release the signal contention between the feedback keeper and the pull‐down network effectively. As a result, noise tolerance of dynamic circuits can be improved with lower sacrifice in power consumption and operating speed. In the 16‐bit TSPCL‐NT Manchester adder, the average noise threshold energy can be enhanced by 3.41 times. In the meanwhile, the power‐delay product can be improved by 5.92% as compared with the state‐of‐the art 16‐bit XOR‐NT Manchester adder design under TSMC 90 nm CMOS process. Copyright © 2014 John Wiley & Sons, Ltd.     

A low‐voltage band‐gap reference circuit with second‐order analyses

A new band‐gap reference (BGR) circuit employing sub‐threshold current is proposed for low‐voltage operations. By employing the fraction of V_BE and the sub‐threshold current source, the proposed BGR circuit with chip area of 0.029mm² was fabricated in the standard 0.18µm CMOS triple‐well technology. It generates reference voltage of 170 mV with power consumption of 2.4µW at supply voltage of 1 V. The agreement between simulation and measurement shows that the variations of reference voltage are 1.3 mV for temperatures from ?20 to 100^°C, and 1.1 mV per volt for supply voltage from 0.95 to 2.5 V, respectively. Copyright © 2010 John Wiley & Sons, Ltd.     

A power‐performance tunable logic with adjustable threshold pseudo‐dynamic building blocks and CMOS compatibility

The continued downscaling of CMOS technology has resulted in very high performance devices, but power dissipation is a limiting factor on this way. Power and performance of a device are dependent on process, temperature, and workload variation that makes it impossible to find a single power optimal design. As a result, adaptive power and performance adjustment techniques emerged as attractive methods to improve the effective power efficiency of a device in modern design approaches. Focusing on this issue, in this paper, a novel logic family is proposed that enables tuning the transistor's effective threshold voltage after fabrication for higher speed or lower power. This method along with dynamic voltage scaling allows simultaneous optimization of static and dynamic power based on the workload requirement. The externally static topology of the proposed logic makes it possible to replace static circuits without requiring significant changes in the system. Experimental results obtained using 90‐nm CMOS standard technology show that the proposed logic improves the average power‐delay product by about 40% for the attempted benchmarks.     

A large dynamic‐range,high dB‐linearity VGA using switch arrays and second‐order mismatch‐shaping DEM technique

A new large dynamic‐range variable gain amplifier (VGA) with improved dB linearity is presented. The traditional cascade VGA has the disadvantages of gain mismatch between sub‐stages and difficulty of employing mismatch cancelation or suppression algorithms. In this paper, switch arrays were used to make the sub‐stages or called gain cells in the coarse‐tuning stage (CTS) work independently and therefore prevent the integral operation of the gain errors. Then, a second‐order mismatch‐shaping DEM was applied conveniently to the CTS and shown to be a useful design technique in improving the dB‐linearity performance. The cascade VGA and its second‐order mismatch‐shaping DEM had been integrated in a 2.4‐GHz receiver chip which was fabricated in a 0.18‐µm CMOS technology with a supply voltage of 1.8 V. Measurement results showed that the gain errors were significantly reduced with second‐order mismatch‐shaping DEM with respect to the traditionally thermometric decoding over a temperature range of [?40, 80] °C. Copyright © 2015 John Wiley & Sons, Ltd.     

Analytical estimation of propagation delay and short‐circuit power dissipation in CMOS gates

An efficient analytical method for calculating the propagation delay and the short‐circuit power dissipation of CMOS gates is introduced in this paper. Key factors that determine the operation of a gate, such as the different modes of operation of serially connected transistors, the starting point of conduction, the parasitic behaviour of the short‐circuiting block of a gate and the behaviour of parallel transistor structures are analysed and properly modelled. The analysis is performed taking into account second‐order effects of short‐channel devices and for non‐zero transition time inputs. Analytical expressions for the output waveform, the propagation delay and the short‐circuit power dissipation are obtained by solving the differential equations that govern the operation of the gate. The calculated results are in excellent agreement with SPICE simulations. Copyright © 1999 John Wiley & Sons, Ltd.     

An ultra‐thin oxide sub‐1 V CMOS bandgap voltage reference

This paper presents a sub‐1 V CMOS bandgap voltage reference that accounts for the presence of direct tunneling‐induced gate current. This current increases exponentially with decreasing oxide thickness and is especially prevalent in traditional (non‐high‐κ/metal gate) ultra‐thin oxide CMOS technologies (t_ox < 3 nm), where it invalidates the simplifying design assumption of infinite gate resistance. The developed reference (average temperature coefficient, T_{C_AVG}, of 22.5 ppm/°C) overcomes direct tunneling by employing circuit techniques that minimize, balance, and cancel its effects. It is compared to a thick‐oxide voltage reference (T_{C_AVG} = 14.0 ppm/°C) as a means of demonstrating that ultra‐thin oxide MOSFETs can achieve performance similar to that of more expensive thick(er) oxide MOSFETs and that they can be used to design the analog component of a mixed‐signal system. The reference was investigated in a 65 nm CMOS technology with a nominal V_DD of 1 V and a physical oxide thickness of 1.25 nm. Copyright © 2013 John Wiley & Sons, Ltd.     

Low‐leakage sub‐threshold 9 T‐SRAM cell in 14‐nm FinFET technology

A novel sub‐threshold 9 T Static Random Access Memory (SRAM) cell designed and simulated in 14‐nm FinFET technology is proposed in this paper. The proposed 9 T‐SRAM cell offers an improved access time in comparison to the 8 T‐SRAM cell. Furthermore, an assist circuit is proposed by which the leakage current of the proposed SRAM cell is reduced by 20% when holding ‘0’ and an equal leakage current during hold ‘1’ in comparison to the 8 T‐SRAM cell. The proposed circuit improves the access time by 40% in comparison to the 8 T‐SRAM cell without any degradation in write and read noise margins, as well. The maximum operating frequency of the proposed SRAM cell is 1.53 MHz at V_DD = 270 mV. Copyright © 2016 John Wiley & Sons, Ltd.     

Optimal transistor sizing for maximum yield in variation‐aware standard cell design

Process variability, in addition to wide temperature and supply voltage variation ranges, severely degrades the fabrication outcome (yield) of digital cells as for the fulfillment of performance specification bounds. This paper presents the application of mathematical optimization to the design of standard cells that are robust to process variations even in worst‐case operating conditions. The method attains the optimal sizing of individual transistors in the cell for maximizing the statistical yield referring to leakage power and propagation delay bounds, with local and global process variations specified by industrial process development kits (PDKs). The approach is demonstrated for a 40 nm low‐power standard threshold voltage Complementary Metal Oxide Semiconductor (CMOS) technology, for an intended operating temperature range [?40 °C, 125 °C] and supply voltage range [0.95 V, 1.05 V]. The reported optimization results show a yield improvement from an initial 50% to 99.9%, and Simulation Program with Integrated Circuit Emphasis (SPICE)‐level Monte Carlo analysis confirmed the estimated yield of the obtained circuits. Copyright © 2015 John Wiley & Sons, Ltd.     

Design criterion for high‐speed low‐power SC circuits

The settling behavior of switched‐capacitor (SC) circuits is investigated in this paper. The analysis is performed for typical SC circuits employing two‐stage Miller‐compensated operational amplifiers (op‐amps). It aims to evaluate the real effectiveness of the conventional design approach for the optimization of op‐amp settling performances. It is demonstrated that the classical strategy is quite inaccurate in typical situations in which the load capacitance to be driven by the SC circuit is small. The presented study allows a new settling optimization strategy based on an advanced circuit model to be defined. As shown by design examples in a commercial 0.35‐ µm CMOS technology, the proposed approach guarantees a significant settling time reduction with respect to the existing settling optimization strategy, especially in the presence of small capacitive loads to be driven by the SC circuit. Copyright © 2010 John Wiley & Sons, Ltd.     

Investigation of multi‐layered‐gate electrode workfunction engineered recessed channel (MLGEWE‐RC) sub‐50 nm MOSFET: A novel design

In this paper, a two‐dimensional (2D) analytical sub‐threshold model for a novel sub‐50 nm multi‐layered‐gate electrode workfunction engineered recessed channel (MLGEWE‐RC) MOSFET is presented and investigated using ATLAS device simulator to counteract the large gate leakage current and increased standby power consumption that arise due to continued scaling of SiO₂‐based gate dielectrics. The model includes the evaluation of surface potential, electric field along the channel, threshold voltage, drain‐induced barrier lowering, sub‐threshold drain current and sub‐threshold swing. Results reveal that MLGEWE‐RC MOSFET design exhibits significant enhancement in terms of improved hot carrier effect immunity, carrier transport efficiency and reduced short channel effects proving its efficacy for high‐speed integration circuits and analog design. Copyright © 2008 John Wiley & Sons, Ltd.     

Novel quantum‐dot cellular automata implementation of flip‐flop and phase‐frequency detector based on nand‐nor‐inverter gates

CMOS technology faces fundamental challenges such as frequency and power consumption due to the impossibility of further reducing dimensions. For these reasons, researchers have been thinking replacement of this technology with other technologies such as quantum‐dot cellular automata (QCA) technology. Many studies have been done to design digital circuits using QCA technology. Phase‐frequency detector (PFD) is one of the main blocks in electrical and communication circuits. In this paper, a novel structure for PFDs in QCA technology is proposed. In the proposed design, the novel D flip‐flop (D‐FF) with reset ability is used. The D‐FF is designed by the proposed D latch which is based on nand‐nor‐inverter (NNI) and an inverter gate. This proposed D latch has 22 cells and 0.5 clock cycle latency and 0.018‐μm² area. The inverter gate of the D‐FF has output signal with high polarization level and lower area than previous inverters, and the NNI gate of the D‐FF is a universal gate. The proposed PFD has 141 cells, 0.17‐μm² occupied area, and two clock cycle latency that is smaller compared with PFD and is based on common inverter and majority gates.