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Performance characterization of a microwave transistor subject to the noise and matching requirements
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Filiz Güneş Salih Demirel 《International Journal of Circuit Theory and Applications》2016,44(5):1012-1028
In this paper, the gain GT of a microwave transistor is expressed analytically in terms of the mismatchings (Vin ≥ 1, Vout ≥ 1) at the ports, noise figure F ≥ Fmin and the [z]‐parameter and noise parameters. Firstly, because the input termination ZS determines the noise F ≥ Fmin, thus the input termination ZS is pre‐determined to lie on the tangent constant noise and available gain circles so that the maximum power delivery is ensured for the given noise. Then, a design configuration is constructed in the input impedance Zin‐ plane covering the gain and the required input and output mismatch circles within the Unconditionally Stable Working Area for the predetermined input termination ZS. Finally, the compatible (F ≥ Fmin, GT, Vin ≥ 1, Vout ≥ 1) quadrates for either required or optimum (Vin ≥ 1, Vout ≥ 1) couples are obtained with their (ZS, ZL) couples from the analysis of the design configuration. Furthermore, a case study is also presented for the full flexible performance characterization of a selected microwave transistor. It can be concluded that the near future microwave transistor is expected to be identified by performance data base built by its compatible (F ≥ Fmin, GT, Vin ≥ 1, Vout ≥ 1) quadrates and the (ZS, ZL) terminations within the device operation domain to overview all the possible low‐noise amplifier designs using the full device capacity. Copyright © 2015 John Wiley & Sons, Ltd. 相似文献
2.
Filiz Güneş Oktay Yurttakal 《International Journal of Circuit Theory and Applications》2020,48(1):56-71
In this paper, the full flexible performance characterization of a transistor with series inductive/parallel capacitive feedback is carried out in terms of LNA applications. For this purpose, the input VSWR Vin–maximum available gain GTmax variations are constructed for a high technology low-noise transistor that is subject to the required noise figure Freq(f) ≥ Fmin(f) along the device's operation band depending on the feedback. These Vin–GTmax variations result in the application of a design chart that indicates which value of feedback can be applied within which region of the operation band with the improvable trade-off between the Vin and output VSWR Vout for the Freq(f) ≥ Fmin(f). Following this, the optimum trade-off between Vin and Vout is made for the necessary operation frequency regions using the load impedance ZL as an instrument with the predetermined source impedance ZS. Finally, the LNA applications of a series inductive/parallel capacitive feedback applied transistor with the optimum Vin, Vout, and GT subject to Freq(f) ≥ Fmin(f) ≥ are also presented as distributed across the entire bandwidth in the different operation bands. It can be concluded that this rigorous work will enable a designer to utilize the entire operation frequency band of transistor through using only a single series inductive/parallel capacitive feedback for the LNA designs of Freq(f) ≥ Fmin(f) with the optimum trade-offs among its performance measures. 相似文献