Performance characterization of a microwave transistor subject to the noise and matching requirements

In this paper, the gain G_T of a microwave transistor is expressed analytically in terms of the mismatchings (V_in ≥ 1, V_out ≥ 1) at the ports, noise figure F ≥ F_min and the [z]‐parameter and noise parameters. Firstly, because the input termination Z_S determines the noise F ≥ F_min, thus the input termination Z_S is pre‐determined to lie on the tangent constant noise and available gain circles so that the maximum power delivery is ensured for the given noise. Then, a design configuration is constructed in the input impedance Z_in‐ plane covering the gain and the required input and output mismatch circles within the Unconditionally Stable Working Area for the predetermined input termination Z_S. Finally, the compatible (F ≥ F_min, G_T, V_in ≥ 1, V_out ≥ 1) quadrates for either required or optimum (V_in ≥ 1, V_out ≥ 1) couples are obtained with their (Z_S, Z_L) couples from the analysis of the design configuration. Furthermore, a case study is also presented for the full flexible performance characterization of a selected microwave transistor. It can be concluded that the near future microwave transistor is expected to be identified by performance data base built by its compatible (F ≥ F_min, G_T, V_in ≥ 1, V_out ≥ 1) quadrates and the (Z_S, Z_L) terminations within the device operation domain to overview all the possible low‐noise amplifier designs using the full device capacity. Copyright © 2015 John Wiley & Sons, Ltd.     

Full flexible performance characterization of a feedback applied transistor with LNA applications

In this paper, the full flexible performance characterization of a transistor with series inductive/parallel capacitive feedback is carried out in terms of LNA applications. For this purpose, the input VSWR V_in–maximum available gain G_Tmax variations are constructed for a high technology low-noise transistor that is subject to the required noise figure F_req(f) ≥ F_min(f) along the device's operation band depending on the feedback. These V_in–G_Tmax variations result in the application of a design chart that indicates which value of feedback can be applied within which region of the operation band with the improvable trade-off between the V_in and output VSWR V_out for the Freq(f) ≥ Fmin(f). Following this, the optimum trade-off between V_in and V_out is made for the necessary operation frequency regions using the load impedance Z_L as an instrument with the predetermined source impedance Z_S. Finally, the LNA applications of a series inductive/parallel capacitive feedback applied transistor with the optimum V_in, V_out, and G_T subject to Freq(f) ≥ Fmin(f) ≥ are also presented as distributed across the entire bandwidth in the different operation bands. It can be concluded that this rigorous work will enable a designer to utilize the entire operation frequency band of transistor through using only a single series inductive/parallel capacitive feedback for the LNA designs of Freq(f) ≥ Fmin(f) with the optimum trade-offs among its performance measures.