共查询到20条相似文献,搜索用时 15 毫秒
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Photodetectors: Ultrasensitive and Broadband MoS2 Photodetector Driven by Ferroelectrics (Adv. Mater. 42/2015) 下载免费PDF全文
Xudong Wang Peng Wang Jianlu Wang Weida Hu Xiaohao Zhou Nan Guo Hai Huang Shuo Sun Hong Shen Tie Lin Minghua Tang Lei Liao Anquan Jiang Jinglan Sun Xiangjian Meng Xiaoshuang Chen Wei Lu Junhao Chu 《Advanced materials (Deerfield Beach, Fla.)》2015,27(42):6538-6538
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Thin‐Film Transistors: High‐Performance 2D Rhenium Disulfide (ReS2) Transistors and Photodetectors by Oxygen Plasma Treatment (Adv. Mater. 32/2016) 下载免费PDF全文
Jaewoo Shim Aely Oh Dong‐Ho Kang Seyong Oh Sung Kyu Jang Jaeho Jeon Min Hwan Jeon Minwoo Kim Changhwan Choi Jaehyeong Lee Sungjoo Lee Geun Young Yeom Young Jae Song Jin‐Hong Park 《Advanced materials (Deerfield Beach, Fla.)》2016,28(32):6984-6984
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Photodetectors: High‐Gain and Low‐Driving‐Voltage Photodetectors Based on Organolead Triiodide Perovskites (Adv. Mater. 11/2015) 下载免费PDF全文
Rui Dong Yanjun Fang Jungseok Chae Jun Dai Zhengguo Xiao Qingfeng Dong Yongbo Yuan Andrea Centrone Xiao Cheng Zeng Jinsong Huang 《Advanced materials (Deerfield Beach, Fla.)》2015,27(11):1967-1967
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2D Lead Dihalides for High‐Performance Ultraviolet Photodetectors and their Detection Mechanism Investigation 下载免费PDF全文
Manlin Tan Chao Hu Yang Lan Jahangeer Khan Hui Deng Xiaokun Yang Peixiang Wang Xiangxiang Yu Jianjun Lai Haisheng Song 《Small (Weinheim an der Bergstrasse, Germany)》2017,13(47)
2D halide semiconductors, a new family of 2D materials in addition to transition metal dichalcogenides, present ultralow dark current and high light conversion yield, which hold great potential in photoconductive detectors. Herein, a facile aqueous solution method is developed for the preparation of large‐scale 2D lead dihalide nanosheets (PbF2‐xIx). High‐performance UV photodetectors are successfully implemented based on 2D PbF2‐xIx nanosheets. By modulating the components of halogens, the bandgap of PbF2‐xIx nanosheets can be tuned to meet varied detection spectra. The photoresponse dependence on incident power density, wavelength, detection environment, and temperature are systematically studied to investigate their detection mechanism. For PbI2 photodetectors, they are dominantly driven by a photoconduction mechanism and show a fast response speed and a low noise current density. A high normalized detectivity of 1.5 × 1012 Jones and an ION/IOFF ratio up to 103 are reached. On the other hand, PbFI photodetectors demonstrate a photogating mechanism mediated by trap states showing high responsivity. The novel 2D halide materials with wide bandgaps, superior detection performance, and facile synthesis process can enrich the Van der Waals solids family and hold great potential for a wide variety of applications in advanced optoelectronics. 相似文献
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High‐Performance 2D Rhenium Disulfide (ReS2) Transistors and Photodetectors by Oxygen Plasma Treatment 下载免费PDF全文
Jaewoo Shim Aely Oh Dong‐Ho Kang Seyong Oh Sung Kyu Jang Jaeho Jeon Min Hwan Jeon Minwoo Kim Changhwan Choi Jaehyeong Lee Sungjoo Lee Geun Young Yeom Young Jae Song Jin‐Hong Park 《Advanced materials (Deerfield Beach, Fla.)》2016,28(32):6985-6992
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Laser‐Assisted Doping: Site Selective Doping of Ultrathin Metal Dichalcogenides by Laser‐Assisted Reaction (Adv. Mater. 2/2016) 下载免费PDF全文
Eunpa Kim Changhyun Ko Kyunghoon Kim Yabin Chen Joonki Suh Sang‐Gil Ryu Kedi Wu Xiuqing Meng Aslihan Suslu Sefaattin Tongay Junqiao Wu Costas P. Grigoropoulos 《Advanced materials (Deerfield Beach, Fla.)》2016,28(2):392-392
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Organic Photodetectors: Ultraflexible Near‐Infrared Organic Photodetectors for Conformal Photoplethysmogram Sensors (Adv. Mater. 34/2018) 下载免费PDF全文
Sungjun Park Kenjiro Fukuda Ming Wang Chulhyo Lee Tomoyuki Yokota Hanbit Jin Hiroaki Jinno Hiroki Kimura Peter Zalar Naoji Matsuhisa Shinjiro Umezu Guillermo C. Bazan Takao Someya 《Advanced materials (Deerfield Beach, Fla.)》2018,30(34)
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Transistors: Inkjet Printing Short‐Channel Polymer Transistors with High‐Performance and Ultrahigh Photoresponsivity (Adv. Mater. 27/2014) 下载免费PDF全文
Hanlin Wang Cheng Cheng Lei Zhang Hongtao Liu Yan Zhao Yunlong Guo Wenping Hu Gui Yu Yunqi Liu 《Advanced materials (Deerfield Beach, Fla.)》2014,26(27):4752-4752
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2D Materials: Large‐Area and High‐Quality 2D Transition Metal Telluride (Adv. Mater. 3/2017) 下载免费PDF全文
Jiadong Zhou Fucai Liu Junhao Lin Xiangwei Huang Juan Xia Bowei Zhang Qingsheng Zeng Hong Wang Chao Zhu Lin Niu Xuewen Wang Wei Fu Peng Yu Tay‐Rong Chang Chuang‐Han Hsu Di Wu Horng‐Tay Jeng Yizhong Huang Hsin Lin Zexiang Shen Changli Yang Li Lu Kazu Suenaga Wu Zhou Sokrates T. Pantelides Guangtong Liu Zheng Liu 《Advanced materials (Deerfield Beach, Fla.)》2017,29(3)
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Optoelectronics: High‐Performance Photovoltaic Detector Based on MoTe2/MoS2 Van der Waals Heterostructure (Small 9/2018) 下载免费PDF全文
Yan Chen Xudong Wang Guangjian Wu Zhen Wang Hehai Fang Tie Lin Shuo Sun Hong Shen Weida Hu Jianlu Wang Jinglan Sun Xiangjian Meng Junhao Chu 《Small (Weinheim an der Bergstrasse, Germany)》2018,14(9)
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Sichao Du Wei Lu Ayaz Ali Pei Zhao Khurram Shehzad Hongwei Guo Lingling Ma Xuemei Liu Xiaodong Pi Peng Wang Hehai Fang Zhen Xu Chao Gao Yaping Dan Pingheng Tan Hongtao Wang Cheng‐Te Lin Jianyi Yang Shurong Dong Zhiyuan Cheng Erping Li Wenyan Yin Jikui Luo Bin Yu Tawfique Hasan Yang Xu Weida Hu Xiangfeng Duan 《Advanced materials (Deerfield Beach, Fla.)》2017,29(22)
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Emerging novel applications at the forefront of innovation horizon raise new requirements including good flexibility and unprecedented properties for the photoelectronic industry. On account of diversity in transport and photoelectric properties, 2D layered materials have proven as competent building blocks toward next‐generation photodetectors. Herein, an all‐2D Bi2Te3‐SnS‐Bi2Te3 photodetector is fabricated with pulsed‐laser deposition. It is sensitive to broadband wavelength from ultraviolet (370 nm) to near‐infrared (808 nm). In addition, it exhibits great durability to bend, with intact photoresponse after 100 bend cycles. Upon 370 nm illumination, it achieves a high responsivity of 115 A W?1, a large external quantum efficiency of 3.9 × 104%, and a superior detectivity of 4.1 × 1011 Jones. They are among the best figures‐of‐merit of state‐of‐the‐art 2D photodetectors. The synergistic effect of SnS's strong light–matter interaction, efficient carrier separation of Bi2Te3–SnS interface, expedite carrier injection across Bi2Te3–SnS interface, and excellent carrier collection of Bi2Te3 topological insulator electrodes accounts for the superior photodetection properties. In summary, this work depicts a facile all‐in‐one fabrication strategy toward a Bi2Te3‐SnS‐Bi2Te3 photodetector. More importantly, it reveals a novel all‐2D concept for construction of flexible, broadband, and high‐performance photoelectronic devices by integrating 2D layered metallic electrodes and 2D layered semiconducting channels. 相似文献
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Photodetectors: Low‐Dimensional Structure Vacuum‐Ultraviolet‐Sensitive (λ < 200 nm) Photodetector with Fast‐Response Speed Based on High‐Quality AlN Micro/Nanowire (Adv. Mater. 26/2015) 下载免费PDF全文
Wei Zheng Feng Huang Ruisheng Zheng Honglei Wu 《Advanced materials (Deerfield Beach, Fla.)》2015,27(26):3971-3971