部分相干光倾斜照明成像研究

本文用部分相干光成像理论研究了提高分辨力及增大焦深的原理．建立了二元光栅倾斜照明成像数理模型。对几种倾斜照明方式进行了模拟计算．对模拟结果作了分析比较。结果表明，用二元光栅照明较好，既能较大程度提高投影光刻曝光系统的分辨力及焦深，又能克服其他照明方式的能量利用率低等缺点。     

改善深亚微米光刻图形质量的途径

本文对目前用于提高亚半微以影光刻机成像分辨力、增大焦深的一些新技术；大数值孔径和短波长技术、倾斜照明技术、相移掩模技术、光瞳波技术，多焦面曝光技术以及表面成技术的和现状作了较为详细的阐述，提出了增大０．３５μｍ图表的分辨力和焦深的途径。     

变形光束的优化增大了焦深

不用离轴滤波器增大焦深的新型曝光方法已研制成功，为ＫｒＦ（２４８ｎｍ）准分子激光光刻技术生产第二代６４ＭＤＲＡＭ器件增添了活力。用这种新方法制作０．３５μｍ的Ｘ、Ｙ向及斜向的图形，可使焦深增大４５％以上。对实际的０．３０μｍ规格以下的器件，用四极照明和环形照明都不可能获得线问对图形的公共焦深。对这种器件，采用新型的变形光束（ＭＢＩ）曝光方法，焦深可增大到１．１μｍ以上。     

0.5μm光刻采用大数孔径i线步进机

采用几种实用ｉ线抗蚀剂０．４８ＮＡｉ线５×镜头具有０．５μｍ线间对成像能力，焦深大于１μｍ。这种镜头与０．４０ＮＡ的ｉ线镜头对比，０．４０ＮＡ的ｉ线镜头对于≥０．７μｍ的线间对图形具有较好的焦深，而０．４８ＮＡｉ线镜头对于〈０．４７μｍ的线间对图形具有较好的焦深，并且可将截止分辨率延伸到０．３５μｍ。并探讨了这种镜头吸热效应的相对不灵敏性和这种镜头内Ｈｅ气体的过压作用。假设模拟制作了０．５μｍ线间     

0.5μm光刻采用大数值孔径i线步进机

采用几种实用ｉ线抗蚀剂，０４８ＮＡｉ线５×镜头具有０５μｍ线间对成像能力，焦深大于１μｍ。这种镜头与０４０ＮＡ的ｉ线镜头对比，０４０ＮＡ的ｉ线镜头对于≥０７μｍ的线间对图形具有较好的焦深，而０４８ＮＡｉ线镜头对于＜０７μｍ的线间对图形具有较好的焦深，并且可将截止分辨率延伸到０３５μｍ。并探讨了这种镜头吸热效应的相对不灵敏性和这种镜头内Ｈｅ气体的过压作用。假设模拟制作０５μｍ线间对图形的最佳数值孔径在０５～０５５之间，进而提出对０４μｍ线间对图形具有足够焦深，使得ｉ线光刻成为ＤＵＶ光刻技术生产６４ＭＤＲＡＭ器件时代的竞争者。     

夏普开发线宽0．24～0．70μm准分子曝光技术

夏普开发线宽０．２４～０．７０μｍ准分子曝光技术日本夏普公司已研制成能形成线宽０．２４～０．７０μｍ的许多电路图形的准分子曝光技术。采用缩小曝光光照明的特殊滤光器，已实现控制光的透射率和相位。准分子激光器可望作为新一代的曝光光源，该公司已考虑把这种新...     

一种新的离轴倾斜照明系统

本文针对目前亚半微米分步重复投影光刻机四极／环形离轴倾斜照明能量利用率低的缺点，设计了一种二元光学元件应用于离轴倾斜照明的系统。该系统简单，易于调整，对照明能量损失少，对分辨力和焦深同样有较大程度提高。     

一种新型的I线和DUV线步进机的设计思路

本文讨论了新生产线上一种步进机，它是由美国半导体制造技术联合体和它的几个子公司联合开发的。它应用ｉ线（３６５ｎｍ）和深紫外（ＤＵＶ２４８ｎｍ）波长，具有高数值孔径、大视场精缩镜头特点，适用的工作焦深，ｉ线机实用分辨率可达０．５μｍ，而ＤＵＶ机实用分辨率为０．３５μｍ。结合这些设备的设计，特别是从对准区域、调焦、ＩＮＳＩＴＵ计量、自动校准和诊断效用方面，简述了步进机的曝光技术。该设备新添的特点，满足     

切割曝光技术及其在器件研究上的应用

本文描述了一种微电子工艺制造中的切割曝光技术,用这一技术在一台Ｇ线投影曝光机上制备出深亚微米图形．由此进一步研制成功０．２５μｍＰ＋多晶硅栅表面沟ＰＭＯＳＦＥＴ,它具有良好的器件特性和抵制短沟道效应的能力．对不同沟长ＮＭＯＳ和ＰＭＯＳＦＥＴ的研究表明,当沟道长度从２．０μｍ降至０．５μｍ时,表面沟ＰＭＯＳ管阈值电压的变化（ΔＶＴ）约为６０ｍＶ,而ＮＭＯＳ管相应ΔＶＴ为１１０ｍＶ．计算机模拟的切割曝光和单线曝光立体图象也清楚地表明,切割曝光方法对于消除二次谐波影响,提高分辨率具有一定作用．     

光学参数配置对ArF光刻性能影响研究

针对分辨力100nm的ArF光刻机,在环形照明和四极照明下,对4种曝光图形结构光刻性能进行了仿真研究。仿真结果表明,如果光刻物镜在加工装调后的光波像差为6nm,杂散光为2%,工件台运动标准偏差为8nm,曝光量控制在10%,CD≤±10%CD,利用四级照明,可以在较大的焦深范围内(DOF≥0.4～0.5μm)实现满足器件要求的100nm密集线条、半密集线条的光刻成像。当曝光剂量更精确控制到7%,可以在较大的焦深范围内(DOF≥0.4～0.5μm)实现满足器件要求的100nm孤立线条的光刻成像。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.