Phase relationships in the system Si3N4-Y2O3-SiO2

Examination of compositions in the system Si₃N₄-Y₂O₃-SiO₂ using sintered samples revealed the existence of two regions of melting and three silicon yttrium oxynitride phases. The regions of melting occur at 1600° C at high SiO₂ concentrations (13 mol% Si₃N₄ + 19 mol% Y₂O₃ + 68 mol% SiO₂) and at 1650° C at high Y₂O₃ concentrations (25 mol % Si₃N₄ + 75 mol % Y₂O₃). Two ternary phases 4Y₂O₃ ·SiO₂ ·Si₃N₄ and 10Y₂O₃ ·9SiO₂ ·Si₃N₄ and one binary phase Si₃N₄ ·Y₂O₃ were observed. The 4Y₂O₃ ·SiO₂ ·Si₃N₄ phase has a monoclinic structure (a= 11.038 Å, b=10.076 Å, c=7.552 Å, =108° 40) and appears to be isostructural with silicates of the wohlerite cuspidine series. The 10Y₂O₃ ·9SiO₂ ·Si₃N₄ phase has a hexagonal unit cell (a=7.598 Å c=4.908 Å). Features of the Si₃N₄-Y₂O₃-SiO₂ systems are discussed in terms of the role of Y₂O₃ in the hot-pressing of Si₃N₄, and it is suggested that Y₂O₃ promotes a liquid-phase sintering process which incorporates dissolution and precipitation of Si₃N₄ at the solid-liquid interface.Visiting Research Associate at Aerospace Research Laboratories, Wright-Patterson Air Force Base, Ohio 45433, under Contract No. F33615-73-C-4155 when this work was carried out.     

Oxidation of sintered silicon nitride

The influence of oxidation at 1200 °C in air for up to 1000 h on the mechanical properties of two Si₃N₄-Y₂O₃-Al₂O₃ materials with different Y₂O₃/Al₂O₃ ratios, Material A (Si₃N₄-13.9 wt% Y₂O₃-4.5 wt% Al₂O₃) and Material B (Si₃N₄-6.0 wt% Y₂O₃-12.4 wt% Al₂O₃), was investigated. The oxidation significantly improves the high-temperature strength and fracture toughness of both materials, but more for Material A. After oxidation, Material A at 1300 °C retains 93% of its room-temperature strength and 87% higher than that before the oxidation. The oxidation has a different effect on the room-temperature K _IC for the two materials. The room-temperature Weibull modulus of Material A decreased by more than half while the 1200 °C Weibull modulus decreased slightly after oxidation. The annealing treatment prior to oxidation had no effect on the high-temperature strengths of the materials after oxidation. The effect of oxidation on mechanical properties is discussed in terms of the microstructure change of the materials.     

Si3N4-ZrO2 composites with small Al2O3 and Y2O3 additions prepared by HIP

Si₃N₄-ZrO₂ composites have been prepared by hot isostatic pressing at 1550 and 1750 °C, using both unstabilized ZrO₂ and ZrO₂ stabilized with 3 mol% Y₂O₃. The composites were formed with a zirconia addition of 0, 5, 10, 15 and 20 wt%, with respect to the silicon nitride, together with 0–4 wt% Al₂O₃ and 0–6 wt% Y₂O₃. Composites prepared at 1550 °C contained substantial amounts of unreacted -Si₃N₄, and full density was achieved only when 1 wt% Al₂O₃ or 4 wt % Y₂O₃ had been added. These materials were generally harder and more brittle than those densified at the higher temperature. When the ZrO₂ starting powder was stabilized by Y₂O₃, fully dense Si₃N₄-ZrO₂ composites could be prepared at 1750 °C even without other oxide additives. Densification at 1750 °C resulted in the highest fracture toughness values. Several groups of materials densified at 1750 °C showed a good combination of Vickers hardness (HV10) and indentation fracture toughness; around 1450 kg mm^–2 and 4.5 MPam^1/2, respectively. Examples of such materials were either Si₃N₄ formed with an addition of 2–6 wt% Y₂O₃ or Si₃N₄-ZrO₂ composites with a simultaneous addition of 2–6 wt%Y₂O₃ and 2–4 wt% Al₂O₃.     

Effect of TiO2 addition on oxidation behavior of sintered bodies composed of Si3N4-Y2O3-Al2O3-AlN

The effect of TiO₂ content on the oxidation of sintered bodies from the conventional Si₃N₄-Y₂O₃-Al₂O₃-AlN system was investigated. Sintered specimens composed of Si₃N₄, Y₂O₃, Al₂O₃, and AlN, with a ratio of 100 : 5 : 3 : 3 wt% and containing TiO₂ in the range of 0 to 5 wt% to Si₃N₄, were fabricated at 1775 °C for 4 h at 0.5 MPa of N₂. Oxidation at 1200 to 1400 °C for a maximum of 100 h was performed in atmospheres of dry and wet air flows. The relation between weight gain and oxidation time was confirmed to obey the parabolic law. The activation energies decreased with TiO₂ content. In the phases present in the specimens oxidized at 1300 °C for 100 h in dry air, Y₃Al₅O₁₂ and TiN, which had existed before oxidation, disappeared. Alpha-cristobalite and Y₂O₃·2TiO₂ (Y2T) appeared in their place and increased with increasing TiO₂ content. In those oxidized at 1400 °C, -cristobalite was dominant and very small amounts of Y₂O₃·2SiO₂ and Y2T were contained. There was a tendency for more -cristobalite to form in oxidation in wet air than in dry air. Therefore, moisture was confirmed to affect the crystallization of SiO₂ formed during oxidation. Judging from the lower activation energy, the crystallization, and the pores formation, we concluded that the addition of TiO₂ decreases oxidation resistance.     

Pressureless sintering of Si3N4 with Y2O2 and Al2O3

Pressureless sintering of Si₃N₄ with Y₂O₃ and Al₂O₃ as additives was carried out at 1750°C in N₂ atmosphere. Si₃N₄ materials which had more than 92% relative density were obtained with 20wt% addition of additives. The flexural strength of as-sintered materials containing 5 to 8.6wt% Al₂O₃ and 15 to 11.4wt% Y₂O₃ was in the range of 480 to 560 MPa at room temperature. The glassy grain-boundary phase of as-sintered materials crystallized to 3Y₂O₃ · 5Al₂O₃ (YAG), Y₂O₃ · SiO₂ (YS), Y₂O₃ · 2SiO₂ (Y2S) and 10Y₂O₃ · 9SiO₂ sd Si₃N₄ (NA) by heat-treatment at 1250° C for 3 days. A specimen containing 15wt% Y₂O₃ and 5wt% Al₂O₃ sintered at 1750° C for 4 h was heat-treated at 1250° C for 3 days to precipitate YAG and YS. The nitrogen concentration of the grain-boundary glassy phase of the specimen was found to be very high, and therefore the flexural strength of the crystallized specimen scarcely decreased at elevated temperatures (the flexural strength of this specimen is 390 MPa at room temperature and 360 MPa at 1300° C). Resistance to oxidation at 1200° C of the specimen was good as well as the flexural strength, compared with that of as-sintered materials.     

Surface oxidation kinetics of Si3N4-4%Y2O3 powders studied by Bremsstrahlung-excited Auger spectroscopy

Samples of silicon nitride powder containing 4.0% Y₂O₃ in weight were heated in air at temperatures between 900 and 1000 °C. The average SiO₂ layer thickness on the Si₃N₄ powder particles, as a function of time at a particular temperature, was measured by Bremsstrahlung-excited Auger electron spectroscopy. Oxidation was found to follow a linear rate law with an activation energy of 56±1.5 kcal mol^–1. The yttrium level measured by X-ray photoelectron spectroscopy was also found to decrease as a function of the oxide layer thickness. This suggests that there is a reaction between the Si₃N₄ and Y₂O₃ particles which results in the formation of an yttrium-rich phase at the interface between the surface SiO₂ layer and the underlying Si₃N₄ particle.     

High-temperature oxidation of silicon nitride-based ceramics by water vapour

Hot-pressed Si₃N₄, sintered Si₃N₄ and three kinds of sialon with different compositions were oxidized in dry air and wet nitrogen gas atmospheres at 1100 to 1350° C and 1.5 to 20 kPa water vapour pressure. All samples were oxidized by both dry air and water vapour at high temperature, and formed oxide films consisting of SiO₂, Y₂Si₂O₇ and Y4A1209. The oxidation rate was in the order sialon > sintered Si₃N₄ > hot-pressed Si3N4. The oxidation rate of sialon increased with increasing Y₂O₃ content, and oxidation kinetics obeyed the usual parabolic law. The oxidation rates in dry air and wet nitrogen were almost the same: the rate in wet nitrogen was unaffected by water vapour pressure above 1.5 kPa. The activation energy was about 800 kJ mol^–1.     

Pressureless sintered SiAlON with low amounts of sintering aid

-SiAlONs of compositions Si_2.6Al_0.393Y_0.007O_0.4N_3.6 and Si_2.6Al_0.384Y_0.014O_0.4N_3.6 were pressureless sintered from mixtures of Y₂O₃ and separately milled -Si₃N₄, AlN, and SiO₂. On sintering, the carbon content of these SiAlONs was reduced to negligible levels and their oxygen content was also proportionately reduced, presumably due to reaction of carbon with SiO₂. These SiAlONs had densities in excess of 98% of theoretical, four-point bend strengths of 460 and 155 MN m^–2 at r.t. and 1400° C, respectively, and 1400° C oxidation rates lower than those reported in the literature for hot-pressed Si₃N₄ and for a similar but stronger SiAlON with 2.5 wt % Y₂O₃. These results indicate that increasing the Y₂O₃ content of SiAlONs increases their strength but decreases their oxidation resistance.     

Oxidation resistance and creep behaviour of a silicon nitride ceramic densified with Y2O3

The corrosion resistance and creep behaviour in air of hot-pressed materials with a composition of 70 Si₃N₄-25 SiO₂-5 Y₂O₃ (mol%) has been studied. Kinetics data and microstructural changes in the 1180 to 1650° C temperature range indicate the presence of two oxidation mechanisms. Between 1180 and 1420° C, the preferential oxidation of the intergranular phase containing nitrogen is interpreted in terms of an inward diffusion of ionic oxygen. At temperatures higher than 1420° C, the degradation of the material is the sum of many processes (solution of silicon nitride, migration of oxygen and yttrium and release of nitrogren) but the diffusion to the nitride-oxide interface of a complex combination of yttrium and nitrogen in the boundary phase seems to be the limiting step. The three-point bending creep is discussed in relation to the evolution of the secondary intergranular phases in an oxidizing environment. The creep deformation is the sum of a viscoelastic component and a diffusional component characterized by the same activation energy (720 kJ mol^–1).     

Effect of oxide addition on the sintering and high-temperature strength of Si3N4 containing Y2O3

The effect of oxide addition on the sintering behaviour and high-temperature strength of Si₃N₄ containing Y₂O₃ was studied at 0.1 to 30 MPa N₂ at 1600 to 2000° C. The addition of oxide, i.e. MgO, Al₂O₃, La₂O₃, or Nd₂O₃, was found to lower the densification temperature and increase the densification rate. The addition of Al₂O₃ or MgO reduced the strength of sintered materials at >1350° C. The addition of La₂O₃ or Nd₂O₃, on the other hand, did not affect high-temperature strength which remained equivalent to that of the material containing only Y₂O₃. These results indicate that the glassy phases in these systems are as refractory as that in the Si₃N₄-Y₂O₃.     

Preparation and properties evaluation of zirconia-based/Al2O3 composites as electrolytes for solid oxide fuel cell systems

Yttria-doped zirconia powders containing 3 to 8 mol% Y₂O₃ and 0 to 20 wt% Al₂O₃ were prepared by both mixing commercial oxides and a coprecipitation method, and the mechanical and electrical properties have been examined as a function of the Al₂O₃ content. The bending strength of the composite at room temperature increased with increasing Al₂O₃ content. In the temperature range 500–1000 °C the bending strength increased with Al₂O₃ content up to 10 wt% and then decreased, the measured value at 1000 °C (200 MPa) being higher than those at lower temperatures for cubic zirconia materials. Fracture toughness (K_IC) decreased with increasing Y₂O₃ content in the Al₂O₃-free zirconia materials. Al₂O₃ additions enhanced the fracture toughness and this was maximum (7 MPa m^1/2) for the composite ZrO₂-3 mol% Y₂O₃/10 wt% Al₂O₃. The electrical conductivity of cubic ZrO₂/Al₂O₃ composites decreased monotonically with Al₂O₃ content, but in tetragonal ZrO₂/Al₂O₃ composites hardly varied or apparently increased up to 10 wt% Al₂O₃. At 1000 °C the highest electrical conductivity was 0.30 S cm^–1 for ZrO₂-8 mol% Y₂O₃, and this decreased up to 0.10 S cm^–1 for the composite ZrO₂-8mol% Y₂O₃/20 wt% Al₂O₃.     

Electrical conductivity of tetragonal stabilized zirconia

The electrical conductivity change on annealing for tetragonal stabilized zirconia (TZP) was studied with the help of a.c. impedance dispersion analysis techniques. The dependences of the conductivity on annealing time at 1000 ° C and on temperature cycling between room temperature and 1000 ° C were investigated. A decrease in conductivity of about 30% at 1000 ° C of TZP with 3 mol% Y₂O₃ was observed during the first 200 h of annealing at 1000 ° C, and no change was observed during further annealing. A similar result was observed for TZP with 2.9 mol% Sc₂O₃. For TZP with 3.0mol% Yb₂O₃, the conductivity decreased gradually during an annealing time of over 2000 h. The impedance dispersion analysis at lower temperature suggested that the decrease in electrical conductivity by annealing at 1000 ° C could be attributed to the increases of both grain boundary and intragrain resistance. No monoclinic phase was observed for the samples annealed at 1000 ° C for 2000 h. On the other hand, a trace of a monoclinic phase was found for TZP with 3mol% Y₂O₃ after the 50th temperature cycling, but no significant decrease in conductivity was observed with the cycling.     

Acoustic emission study of phase relations in low-Y2O3 portion of ZrO2-Y2O3 system

The (metastable) tetragonal phase in 3–4 mol% Y₂O₃-ZrO₂ alloys undergoes a transition to the monoclinic form in the 200–300 °C temperature range. Microcracking due to the volume change at this transition has been detected in these compositions by sharp acoustic emission during heating. The phase change was confirmed by X-ray diffraction, dilatometry and scanning electron microscopy. The monoclinic tetragonal transition in ZrO₂-1 mol% Y₂O₃ alloy at 850–750 °C and the same phase change in 2, 3, 4 and 6 mol% Y₂O₃ compositions at the eutectoid temperature of about 560 °C was also clearly signalled by the acoustic emission counts during heating and cooling. There was no significant acoustic emission activity on heating and cooling the 9 and 12 mol% Y₂O₃ compositions, which are cubic. The acoustic emission data thus confirm the phase relations in the 1–12 mol% Y₂O₃ region, established by conventional methods such as differential thermal analysis, dilatometry and X-ray diffraction.     

Fabrication and characterization of porous unidirectional Si2N2O-Si3N4 composite

Porous unidirectional Si₂N₂O-Si₃N₄ composite was fabricated by in-situ nitriding of a porous unidirectional Si substrate. The porous unidirectional Si substrate having a diameter of 450 μm, was prepared by forming ethanol bubbles in a slurry which contained Si, Y₂O₃, Al₂O₃ and methylcellulose powder. After nitridation at 1400 °C, the Si substrate was transformed into Si₂N₂O-Si₃N₄ composite and the pore surface of the unidirectional Si₂N₂O-Si₃N₄ composite was covered throughout with Si₂N₂O fibers, which had a diameter of about 55 nm. The Si₂N₂O fibers were orthorhombic single-crystals with an amorphous layer having a thickness of about 1 nm. The compressive strength of the in-situ synthesized Si₂N₂O-Si₃N₄ composite was about 30 MPa.     

Phase relationships in the system Si3N4-SiO2-La2O3

Phase relationships in the system Si₃N₄-SiO₂-La₂O₃ have been investigated after cooling from 1700° C. Two phases, 2Si₃N₄·La₂O₃ (monoclinic) and La₅ (SiO₄)₃N (hexagonal), were identified; the other two phases in the system, LaSiO₂N (monoclinic) and La₄Si₂O₇N₂ (monoclinic), were found to dissociate to La₅ (SiO₄)₃N and a glass after cooling from temperatures above 1650° C. The unit cells of 2Si₃N₄·La₂O₃, LaSiO₂N and La₄Si₂O₇N₂ have been determined and compared with those of preceding works. The results are discussed in relation to the intergranular phases observed when Si₃N₄ is sintered with La₂O₃ additions.     

Direct bonding of Cu to oxidized silicon nitride by wetting of molten Cu and Cu(O)

When pressureless sintered silicon nitride with the main additives Y₂O₃ and Al₂O₃, having a thermal conductivity K = 20 W/m K, was oxidized at 1240–1360 °C in still air, the resulting surface oxide layer easily bonded to a copper plate in the temperature region between 1065 and 1083 °C, and in the oxygen concentration range of 0.008–0.39 wt%, as shown in a Cu–O phase diagram. The oxide on the silicon nitride was characterized as Y₂O₃·2SiO₂ and mixed silicate glass with additives and impurities that diffused through the grain boundary. The bonding strength of Cu/Si₃N₄ depends on the amount or layer thickness of silicate glass and reaches as high as 100 MPa by shear at room temperature. Detailed analysis of the oxidation layer and the peeled-off surfaces of directly bonded Si₃N₄/Cu reveal that the main mechanism of bonding is wetting to glassy silicate phase by mixtures of molten Cu and α-solid solution Cu(O), which solidify to α + Cu₂O below 1065 °C by a eutectic reaction. The direct reactive wetting of molten Cu, supplied from the grain boundary of a Cu plate, on the glassy phase enables very tight chemical bonding via oxygen atoms.     

Carbothermal reduction and nitridation synthesis of silicon nitride by using solution combustion synthesized precursors

Carbothermal reduction and nitridation synthesis of Si₃N₄ was investigated by using precursor powders prepared by a solution combustion synthesis method. Glycine or urea (fuel), ammonium nitrate (oxidizer), silicic acid (Si source), and sucrose (major carbon source) were dissolved completely in water. This solution was dried and then heated to undergo the solution combustion synthesis reaction, resulting in a homogeneous mixture of nano-sized carbon and SiO₂ particles, which was used as the precursor powder for the carbothermal reduction and nitridation synthesis of Si₃N₄. When the carbothermal reduction and nitridation reaction was carried out at 1,425–1,450 °C for 4 h, formation of Si₃N₄ can be detected only when the C/SiO₂ weight ratio is greater than ~2.0. The Si₃N₄ yield increases rapidly as the C/SiO₂ weight ratio is increased from ~2.0 to 2.8 and decreases with further increase in the C/SiO₂ ratio. The α-phase content increases with increasing C/SiO₂ weight ratio and decreases with increasing temperature. Depending on the C/SiO₂ ratio, a Si₃N₄ yield of ~80 wt% and an α-phase content of ~90 wt% could be obtained.     

Fabrication and mechanical properties of silicon carbide–silicon nitride nanocomposites

A powder mixture of ultrafine –SiC–35 wt% –Si₃N₄ containing 6 wt% Al₂O₃ and 4 wt% Y₂O₃ as sintering additives were liquid–phase sintered at 1800°C for 30 min by hot–pressing. The hot–pressed composites were subsequently annealed at 1920°C under nitrogen–gas–pressure to enhance grain growth. The average grain–size of the sintered bodies were ranged from 96 to 251 nm for SiC and from 202 to 407 nm for Si₃N₄, which were much finer than those of ordinary sintered SiC–Si₃N₄ composites. Both strength and fracture toughness of fine–grained SiC–Si₃N₄ composites increased with increasing grain size. Such results suggested that a small amount of grain growth in the fine–grained region (250 nm for SiC and 400 nm for Si₃N₄) was beneficial for mechanical properties of the composites. The room–temperature flexural strength and fracture toughness of the 8–h annealed composites were 698 MPa and 4.7 MPa · m^1/2, respectively.     

Effect of CeO2, MgO and Y2O3 additions on the sinterability of a milled Si3N3 with 14.5 wt% SiO2

Specimens of milled -Si₃N₄ with 0 to 5.07 equivalent per cent of CeO₂, MgO or Y₂O₃ additions were pressureless sintered at 1650 to 1820° C for 4 h in static nitrogen at 34.5 kPa (5 psi) gauge pressure and while covered with a mixture of Si₃N₄+SiO₂ powders. The density — per cent addition — temperature plots showed maxima which, for all three additives, occurred between 1.2 and 2.5 equivalent per cent. Maximum densities resulted on sintering in the 1765 to 1820° C range and were 99.6 per cent of theoretical with 2.5 equivalent per cent CeO₂, 98.5 per cent of theoretical with 1.24 to 1.87 equivalent per cent MgO, and 99.2 per cent of theoretical with 2.5 equivalent per cent Y₂O₃. Also, densities 94 per cent of theoretical were obtained with as little as 0.62 equivalent per cent additive (1.0 MgO, 2.11 CeO₂ or 1.85 Y₂O₃, in wt%). X-ray diffraction showed that the materials were predominantly -Si₃N₄ with some or no Si₂N₂O. Scanning electron photomicrographs showed microstructures of elongated grains with aspect ratios of about 5, with all additives.     

Effects of ZrO2 and Y2O3 dissolved in zyttrite on the densification and theα/β phase transformation of Si3N4 in Si3N4-ZrO2 composite

In Si₃N₄-ZrO₂ composite, the effects of zirconia and Y₂O₃ dissolved in zyttrite on the densification and the/ phase transformation of Si₃N₄ were studied using hot-pressing of Si₃N₄ with the addition of pure, 3, 6, and 8 mol% Y₂O₃-doped zirconia. Reaction couples between Si₃N₄ and ZrO₂ of zyttrite were made to observe the reaction phenomena. The addition of pure zirconia was not effective to obtain full density of the Si₃N₄-ZrO₂ composite. However, Y₂O₃ diffused from the added zyttrite promoted densification; the density of Si₃N₄ with 5 vol% pure ZrO₂ composite was 71% theoretical, and nearly full density (>97%) could be obtained in Si₃N₄ with 5 vol% 6, 8 mol% Y₂O₃-doped ZrO₂ composite. On the basis of observations of the Si₃N₄-pure ZrO₂ reaction couple, the reaction between Si₃N₄ and ZrO₂ resulted in the formation of Si₂N₂O phase, and the/ phase transformation of Si₃N₄ occurred via this Si₂N₂O phase. From the XRD analysis of the reaction layer between Si₃N₄ and zyttrite, it is suggested that the reaction products, Y₂Si₂O₇ and Y₂Si₃N₄O₃ phases, play an important role in the densification of Si₃N₄-zyttrite composite.