微型蚂蚁激光供能系统设计

基于微型蚂蚁的太阳光供能技术,设计了一种微型蚂蚁激光供能系统,有效地克服了使用引线和电池供能所带来的不足以及太阳光供能方式对阳光的依赖．对激光供能系统的整体结构与部件进行分析,研究了能量转换装置的转换效率,讨论了传输过程中的能量损耗问题,论证了系统供能的可行性．实验采用半导体激光器提供能量,经透镜准直后照射到微型蚂蚁携带的光电池上转换成电能．激光对微型蚂蚁供能比太阳光有更高的供能效率。     

LD泵浦的Nd:YAG陶瓷激光器

介绍了一种新型的固体激光材料——Nd：Y3Al5O12(Nd：YAG)陶瓷的光学特性,设计并研制成LD泵浦的Nd：YAG陶瓷微型激光器件。阈值泵浦功率为48mW,在泵浦功率为1．5W时获得了516mW的1064nm连续激光输出,光-光转换效率为34．41%。     

带有光子晶体波导的微型随机激光器研究

文中采用有限时域差分(FDTD)法研究了ZnO随机介质与光子晶体波导相结合的微型激光器的辐射特性和频谱特性,用平面波展开法分析了光子晶体能带特性。数值研究结果表明:由于光与随机介质相互作用,使得光在该微型激光器中放大,损耗减小,存在较长滞留时间,同时随机介质局域光的能力变强,激光的阈值降低,而且含四方格子结构光子晶体的激光器具有良好的激光特性和调制作用。该新型器件的设计与研究将为研制可嵌入集成光子芯片的、低阈值的微型激光器提供理论基础。     

激光二极管抽运Nd∶GdVO_4微片激光器

报道了一种新型激光二极管(LD)端面抽运Nd∶GdVO4微片激光器,测量了抽运输入功率与激光输出功率的关系,激光阈值功率为83 mW,在2 W的抽运功率下得到860 mW的1.064μm基横模连续激光输出,光-光转换效率为43%,最大斜度效率达到47%。     

硅酸镓镧电光调Q的Ce:Nd:YAG-KTP高效光参变人眼安全激光器研究

在灯泵Ce:Nd:YAG双掺晶体水冷激光器中,用高损伤阈值的新型电光晶体硅酸镓镧(La3Ga5SiO14)作为Q开关,采用场效应管快速Q开关驱动电路,实现了20Hz脉冲重复频率的稳定1.064μm基频激光输出,在基频激光腔外设计了光参变激光谐振腔,用KTP晶体进行光参变转换,基于Ⅱ类非临界相位匹配条件,实现了1.57μm人眼安全激光输出。研究了YAG晶体棒安装应力对1.57μm输出的影响,发现由应力引起的双折射效应可使光参变转换效率严重降低,分析了效率降低的原因,给出了等效应力与光参变转换效率的关系曲线,测试得到所设计激光器的光参变转换效率最高点,在20Hz脉冲重复频率下,当1.064μm激光脉冲能量为220mJ时,1.57μm激光脉冲能量为109.3mJ,最高达到了近50%的光参变转换效率,脉冲宽度为4.3ns,束散角为8.1mrad,此时电抽运注入为11.3J,总电光效率为0.96%,进一步增大1.064μm激光能量时,光参变转换效率会缓慢下降。激光器输出稳定性优于5%,结构紧凑,通过了温度、振动、冲击等主要环境试验技术指标考核,实现了工程化应用。     

布氏角片状激光振荡器腔内损耗实验研究

为了研究布氏角片状激光器能量转换效率,提高激光器系统转换效率,采用实验的方法,对影响片状激光器转换效率的主要因素进行了理论分析并进行了实验验证,取得了能量输出与激光腔内损耗关系的数据。结果表明,多片结构带来的腔内固有损耗导致了激光器总体效率低下,由布氏角构形产生的腔内动态损耗限制了激光器连续工作能力,抽运损耗也对激光器能量转换效率有一定影响。     

种子注入对可调谐光学参量振荡激光器阈值和转换效率影响的理论与实验研究

通过对种子注入调谐光参量振荡激光器的理论计算．从理论上证明了种子注入法不仅能压窄参量激光的线宽，还能降低参量振荡激光器振荡的阈值．增大其输出参量激光的能量．提高输出激光能量的转换效率．并在实验上给予证明。     

微型五磷酸钕脉冲激光器的研究

本文从理论上论证了用微型闪光灯横向泵浦五磷酸钕的可行性.给出用BDN染料调Q的NdP5O14激光器阈值、输出能量和单峰域公式.并给出一种能确定染料调Q激光器单脉冲输出极限效率的图解法.本文较全面地阐述了用闪光灯泵浦的NdP5O14激光器的静态、动态(调Q)激光输出特性及其测试结果.略述了此类NdP5O14激光器的实用性及其发展.     

2.94μmYAG∶Er~(3+)激光器的研究

本文报道了YAG:Er~(3+)的2.94μm激光器的研制结果,包括激光腔镜损伤、腔内激光放大率、激光阈值、斜率效率、内耗及能量输出特性等,当输入能量为288J(T=28.5％)时,获得2J/pulse的激光输出。     

激光推进的理论及实验研究

报道了激光技术国家重点实验室在国防预研项目和航天研究基金的支持下,进行激光推进的部分结果.理论上研究了激光推进的激光推力、比推力、能量耦合系数和功率转换效率等参数与激光参数以及使用材料的性质的关系.实验上研究了铝、聚四氟乙烯、有机玻璃等不同靶材的激光推进效果;将单脉冲能量为7 J、脉宽为1 ms的YAG激光聚焦后作用在环氧树脂上,得到了单脉冲的激光推力为0.5牛顿、比推力为120 s、能量耦合系数8达因/瓦、功率转换效率为4.99%;采用YAG倍频激光器、准分子激光器及TEACO2激光器,研究了激光推进效果与波长的关系. 研究结果表明激光推进参数与激光参数(波长、功率、脉冲宽度、重复率)及使用材料的性质有很大的关系.激光能量越大,脉冲宽度越窄,光斑尺寸越小,所产生的激光推进效果越好.(OE35)     

1.3414μm Nd:YAlO3激光泵浦的室温中红外Co:MgF2激光器

报道了1.3414μmNd:YAlO3激光端面泵浦的室温2.1000μmCo:MgF2脉冲激光的实验结果,得到了279.4mJ能量输出,器件斜率效率达23%,阈值能量为125mJ.     

光泵CF4 16微米激光器

本文介绍了由 TEA CO_2激光器的9R(12)跃迁线泵浦冷却的 CF_4分子,获得 16μm激光输出。泵浦光用限孔光阑得到TEMoo单横模,由低气压CO_2增益池压缩线宽,并与光泵腔良好的模式匹配下,以700mJ的泵浦源能量获得25mJ左右的16μm激光输出能量。光量子转换效率达7％左右。激光脉宽窄于150ns,该器件可在约0.5Hz重复率下,以20mJ的输出能量运转数千次。     

二极管象散光束端面泵浦Nd:YAG激光器

研究了用象散二极管激光光束端面泵浦的TEM0m,TEMn0多模Nd:YAG激光器。文中报导了不同泵浦功率下的激光模式情况和稳定性情况,最大CW输出功率320mW,斜效率28%,最高稳定CW输出功率232mW,斜效率20%,为进一步研究二极管泵浦的列阵器件奠定了基础。     

“飞秒激光微加工——打孔”的文献综述

飞秒激光微加工技术作为一种新兴的加工技术,具有非接触、效率高、加工精度高、热效应小、损伤阈值低以及能够实现真正的三维结构微加工等传统技术无法比拟的诸多优点,其应用领域相当广泛。文章描述了飞秒激光加工透明材料时,激光能量沉积在光学趋肤层,热效应极小的特性。指出了目前打孔普遍利用激光的直写技术,针孔掩模加工技术可以改善孔形的事实。最后展望了飞秒激光微加工的研究方向。     

A new method for the estimation of pumping coefficient for a ruby laser

A new, graphical method for the estimation of the pumping coefficient for a ruby laser is proposed. The pumping coefficient has been determined from the experimental data of the slope efficiency and threshold energy for a 15 cm × 0.95 cm Brewster-ended ruby laser. This has also been determined from the nonlinear relation of the threshold energy as a function of output mirror reflectivity. The coefficient, obtained from the proposed method, reasonably agrees with those obtained from existing methods.     

High power single-mode (λ=1.3–1.6 μm) laser diodes based on quantum well InGaAsP/InP heterostructures

The possibility of achieving maximal optical output power in the single-mode lasing for mesa-stripe laser diodes fabricated on the basis of InGaAsP/InP quantum-well heterostructures with separate confinement have been studied both experimentally and theoretically. The basic condition for the single-mode lasing of laser diodes in a wide range of driving currents is shown to be the precise choice of the effective refractive index Δn _L discontinuity in the plane parallel to the p-n junction. A InGaAsP/InP separate confinement heterostructure with a step waveguide, with a threshold current density of 180 A/cm² and an internal quantum efficiency of stimulated emission of 93–99%, has been manufactured via the MOCVD method. The optimization of the mesa-stripe diode design for the developed InGaAsP/InP heterostructure is carried out with the aim of achieving maximal optical output power in the case of single-mode lasing. An output power of 185 mW is attained in the laser diode with the mesa-stripe width W=4.5 μm (λ=1480 nm). The maximal continuous output power was as high as 300 mW. The full width at half-maximum (FWHM) of the lateral far-field pattern increased by 1° relative to the threshold value.     

Temperature dependence of the threshold current density in semiconductor lasers (λ = 1050–1070 nm)

The temperature dependences of the threshold current density and threshold concentration in semiconductor lasers based on MOVPE-grown asymmetric separate-confinement heterostructures with an extended waveguide have been studied (wavelengths ?? = 1050?C1070). It is shown that the temperature dependence of the threshold current density in semiconductor lasers becomes markedly stronger at above-room temperatures, which is due to temperature-induced carrier delocalization into the waveguide layers of a laser heterostructure. It was found that the sharp decrease in the thermal stability of the threshold current density with increasing temperature correlates with the coincidence of the Fermi level with the conduction-band bottom of the waveguide layer in the laser heterostructure. It is experimentally demonstrated that an increase in the energy depth and number of quantum wells in the active region of a semiconductor laser improves the thermal stability of the threshold current density. It is demonstrated that the characteristic parameter T ₀ attains a value of 220 K in the temperature range from ?20 to +70°C.     

MOCVD-grown broad area InGaAs/GaAs/InGaP laser diodes

A MOCVD technology for growth of InGaAs/GaAs/InGaP laser heterostructures on a modified Epiquip VP-50-RP installation was developed. Mesa stripe laser diodes with threshold current density J _th=100–200 A/cm², internal optical loss α_i=1.3–1.7 cm^?1, and internal quantum efficiency η_i=60–70% have been fabricated. A CW output optical power of 5 W has been obtained for a single 100-µm-wide aperture mesa stripe laser diode emitting at 1.03 µm. It is shown that use of AlGaAs waveguide layers, which increase the conduction band barrier offset, lowers the temperature sensitivity of laser heterostructures within the temperature range 10–80°C.     

CeO2对镍基碳化钨激光熔覆层性能的影响

研究了不同激光功率条件下不同含量的氧化铈对镍基碳化钨金属陶瓷熔覆层宏观质量、显微组织及熔覆层横截面硬度的影响。CeO2的掺入均能使镍基碳化钨金属陶瓷熔覆层中的相组织得到细化,裂纹大大减少,宏观质量得到显著改善。随稀土氧化物加入量的增加,稀土的细晶变质作用效果更加明显。当CeO2的含量为0.16wt%时,熔覆层的硬度达到最大约为900HV0.3～1300HV0.3,裂纹基本消失。激光功率对熔覆层的宏观质量、显微硬度及微观组织均有影响,当激光功率低于1.5kW时,难以得到连续光滑的熔覆层;当激光功率高于2.0kW时,熔覆层的晶粒长大,硬度明显降低。     

基于双温耦合模型的太赫兹晶体损伤阈值分析

飞秒激光通过非线性光学整流效应产生太赫兹(THz)波时,THz波转换效率会随着飞秒激光功 率的增大而明显提高。然而,飞秒激光功率过高会造成非线性晶体损伤,进而影响THz波的 产生及输出, 因而对飞秒激光作用下非线性晶体的损伤阈值进行研究具有重要意义。本文在经典的双温模 型基础上,引 入电子激发、载流子吸收等电离过程的影响,建立了飞秒激光作用下非线性THz晶体损伤 阈值的预估模 型。采用有限差分法,数值模拟了飞秒激光辐照下THz晶体的温度场变化,并据此对 晶体损伤阈值进行 预估。在此基础上,分析比较了LiNbO₃、ZnTe和ZnSe 3种THz晶体的损伤 阈值随激光脉宽的变化规 律。结果表明,晶体的禁带宽度和比热容越大 ,晶体的损伤 阈值就越大;LiNbO₃晶体因其具有更高的损伤阈值,在产生高功率THz波方面 具有更大的优势。