用于AC-PDP保护层的六硼化镧薄膜的制备与性能研究

采用丝网印刷法在PDP的传统Mg O保护层上制备了六硼化镧薄膜。改变工艺参数,测试了La B6/Mg O薄膜的表面形貌和光学性能,并对透明的La B6/Mg O薄膜在Xe/Ne混合气体中的放电性能进行了测试。实验结果表明,采用400目丝网和球磨后的La B6粉末有利于提高La B6/Mg O薄膜的透过率,相比于原有的Mg O衬底,透过率达到90%以上。放电测试结果表明,印刷了La B6薄膜的Mg O+La B6样品的放电性能优于传统的Mg O保护层,其中着火电压降低了7%左右,放电延迟降低了9%左右。     

MgO缓冲层对Si衬底上制备Fe3Si薄膜性能的影响

采用磁控溅射方法和热加工工艺在n型Si衬底上溅射不同厚度的MgO层并制备Fe-Si薄膜层,退火后形成Fe3Si/MgO/Si多层膜结构.利用MgO缓冲层对退火时Si衬底扩散原子进行屏蔽,并分析MgO层对Fe3Si薄膜结构和电学性质的影响.通过X射线衍射仪(XRD)、扫描电子显微镜(SEM)和四探针测试仪对Fe3Si薄膜的晶体结构、表面形貌、断面形貌和电阻率进行表征与分析.研究结果表明:当MgO层厚度为20 nm时生成Fe0.9Si0.1薄膜,当厚度为50,100,150和200 nm时都生成了Fe3Si薄膜,生成的Fe3Si和Fe0.9Si0.1薄膜以(110)和(211)取向为主.随MgO缓冲层厚度增加,Si衬底扩散原子对Fe3Si薄膜的影响减小,Fe3 Si薄膜的晶格常数逐渐减小,晶粒大小趋向均匀,平均电阻率呈现先增大后减小趋势.研究结果为后续基于Fe3 Si薄膜的器件设计与制备提供了参考.     

Electron-Induced Secondary Electron Emission Properties of MgO/Au Composite Thin Film Prepared by Magnetron Sputtering

As a type of electron-induced secondary electron emitter, MgO/Au composite thin film was prepared by reactive magnetron sputtering of individual Mg target and Au target, and the effects of key process parameters on its surface morphology and secondary electron emission (SEE) properties were investigated. It is found that to deposit a NiO buffer layer on the substrate is conducive to the subsequent growth of MgO grains owing to the lattice matching. The gold addition can raise the electrical conductivity of MgO film and further suppress the surface charging. However, the gold deposition would interfere with the MgO crystallization and increase the surface roughness of MgO/Au film. Therefore, MgO/Au composite thin film with a NiO buffer layer and proper deposition times of MgO and Au can achieve superior SEE properties due to good MgO crystallization, low surface roughness and reasonable electrical conductivity. The optimized MgO/Au composite thin film has a higher SEE coefficient and a lower 1-h SEE degradation rate under electron beam bombardment in comparison with MgO film.     

Aging characteristics of AC plasma display panels

The initial accelerated aging ("burn-in") and the subsequent alternate-line-aging (ALA) characteristics of the operating voltages of ac plasma display panels were studied for MgO films deposited on dielectric glass substrates at 25°-350°C in a residual gas pressure of 10^-6-10^-7torr. To study the effects of the presence of oxygen during film deposition, the films were also deposited in 10^-4-10^-5torr of oxygen. Films deposited at 350°C showed significantly better aging characteristics than those deposited in 25°C. This observed dependence of the aging characteristics on the various parameters of the panel-fabrication process is explained in terms of a postulated effect of oxygen on the surface properties of MgO films and the changes in the surface properties of the MgO films (caused by changes in the surface stoichiometry) produced by ion bombardment during the discharge.     

The role of avalanching in cold emission devices

Nonthermionic emission of electrons into a vacuum is observed in Malter effect emission, MgO cold-cathode type emission, and thin film metal sandwich emission. These cold-cathode effects possess certain similarities which appear to be the result of a common basic emission mechanism. MgO cold-cathode type emission has been the most extensively studied of these three cold-cathode effects. In MgO cold cathodes an electric field of the order of 10⁶v/cm is developed across a relatively thin (∼7000Å) oxide layer. This electric field is indirectly developed as a result of hole migration through the MgO layer. A similar process of field enhancement probably occurs in Malter effect emission, while in thin film metal sandwich devices the required electric field is developed directly. Study of the detailed characteristics of MgO cold-cathode emission suggests strongly that electron avalanching is the basic mechanism responsible for self-sustained emission. In the self-sustained region, the IV characteristics are those of a simple avalanche process. Furthermore, the observed electron velocity distribution and the temperature dependence of emission follow from the requirement that electrons which are emitted come from a highly energetic electron "gas," presumably the terminal result of an avalanching process. Similarities between this process and the mechanism producing emission from thin film metal sandwich devices with insulating layers of 250Å-16,000 Å thickness are discussed.     

Si-YBaCuO intermixing and reactive patterning technique

A novel Si-YBaCuO intermixing technique has been developed for patterning YBaCuO superconducting thin films on both insulating oxide substrates (MgO) and semiconductor substrates (Si). The electrical, structural, and interfacial properties of the Si-YBaCuO intermixed system have been studied using resistivity, x-ray diffraction, scanning electron microscopy, x-ray photoelectron spectroscopy and Auger depth profiling measurements. The study showed that the reaction of Si with YBaCuO and formation of silicon oxides during a high temperature process destroyed superconductivity of the film and created an insulating film. On a MgO substrate, the patterning process was carried out by first patterning a silicon layer using photolithography or laser-direct-writing, followed by the deposition of YBaCuO film and annealing. For a silicon substrate, thin metal layers of Ag and Au were patterned as a buffer mask which defines the YBaCuO structures fabricated thereafter. Micron-sized (2-10 Μm) superconducting structures with zero resistance temperature above 77 K have been demonstrated. This technique has been used to fabricate current controlled HTS switches and interconnects.     

The use of multilayer neural networks in material synthesis

This paper demonstrates the incorporation of a multilayer neural network in semiconductor thin film deposition processes. As a first step toward neural network-based process control, we present results from neural network pattern classification and beam analysis of reflection high energy electron diffraction RHEED images of GaAs/AlGaAs crystal surfaces during molecular beam epitaxy growth. For beam analysis, we used the neural network to detect and measure the intensity of the RHEED beam spots during the growth process and, through Fourier transformation, determined the thin film deposition rate. The neural network RHEED pattern classification and intensity analysis capability allows, powerful in situ real time monitoring of epitaxial thin film deposition processes. Our results show that a three layer network with sixteen hidden neurons and three output neurons had the highest correct classification rate with a success rate of 100% during testing and training on 13 examples     

IMC Growth at the Interface of Sn–2.0Ag–2.5Zn Solder Joints with Cu,Ni, and Ni–W Substrates

Growth of intermetallic compounds (IMC) at the interface of Sn–2.0Ag–2.5Zn solder joints with Cu, Ni, and Ni–W substrates have been investigated. For the Cu substrate, a Cu₅Zn₈ IMC layer with Ag₃Sn particles on top was observed at the interface; this acted as a barrier layer preventing further growth of Cu–Sn IMC. For the Ni substrate, a thin Ni₃Sn₄ film was observed between the solder and the Ni layer; the thickness of the film increased slowly and steadily with aging. For the Ni–W substrate, a thin Ni₃Sn₄ film was observed between the solder and Ni–W layer. During the aging process a thin layer of the Ni–W substrate was transformed into a bright layer, and the thickness of bright layer increased with aging.     

(Bi,Pb)2Sr2CaCu2O8薄膜的激光感生电压效应

采用紫外脉冲激光沉积技术和高低温沉积工艺,在LaAlO3(100)平衬底及倾斜衬底上成功制备了c轴取向的(Bi,Pb)2Sr2CaCu2O8[(Bi,Pb)-2212]薄膜;研究了在倾斜LaAlO3(100)单晶衬底上生长的(Bi,Pb)-2212薄膜激光感生热电电压信号与沉积条件及入射激光能量的关系。为避免(Bi,Pb)-2212薄膜被激光剥蚀或蒸发,还初步研究了MgO保护层对(Bi,Pb)-2212薄膜激光感生电压信号的作用,结果表明MgO层能够显著增强激光感生热电电压效应。     

等离子体显示器的介质保护膜

介质保护膜对改善等离子体显示器的工作持性有极其重要的意义。本文概述了一些作为等离子体显示器介质保护层材料的特点,特别是氧化镁薄膜的性质及制备方法,分析了在显示屏制作过程中后工序对氧化镁介质保护层的影响,对等离子体显示器的产业化的发展具有重要意义。     

Low-Dielectric-Loss Barium Strontium Titanate Thin Films with MgO Buffer Layer for Tunable Microwave Devices

The dielectric and microwave properties of Ba_0.6Sr_0.4TiO₃ (BST60) thin films with a MgO buffer layer deposited on Al₂O₃ substrates were investigated. Insertion of the MgO buffer layer is demonstrated to be an effective approach to fabricate low-dielectric-loss BST thin films. x-Ray pattern analysis indicates that the thin films exhibit good crystalline quality with a pure perovskite phase and that insertion of the MgO buffer layer does not change the crystal structure of BST. The nonlinear dielectric properties of the BST films were measured by using an interdigital capacitor (IDC). At room temperature, the tunability of the BST films with a MgO buffer layer was 24.1% at a frequency of 1 MHz with an applied electric field of 80 kV/cm. The dielectric loss of the BST thin films is only 0.005 to 0.007 in the frequency range from 20 Hz to 2 MHz, the same as for BST films prepared on single-crystal MgO substrates. The microwave dielectric properties of the BST thin films were also measured by a vector network analyzer from 50 MHz to 10 GHz.     

具有碳纳米管掺杂的场增强型DBD平面光源性能研究

为了降低介质阻挡放电平面光源(DBDL)器件的着火电压以及提高其发光效率,本文提出了一种掺杂型的具有场增强型结构的DBD平面光源,该结构采用碳纳米管(CNT)与荧光粉相混合,在荧光粉表明镀有一层厚度为40 nm的MgO薄膜以提高二次电子发射系数及降低气体放电中产生的离子对CNT的冲击.实验结果表明采用在荧光粉中掺杂CNT以及蒸镀MgO薄膜的DBD平面光源结构可以有效降低器件的着火电压和提高发光效率,同传统无掺杂的结构相比,在气压为50kPa的Ne-15％Xe混合气体时,掺杂比为1 ∶ 5000的DBD平面光源其着火电压降低了10％;在相同输入功率下,其亮度及发光效率提高了约20％.     

保护膜材料对AC PDP放电特性的影响

利用所研制的模拟AC PDP放电特性测量装置，对（CaSr)O,(MgSr)O等不同材料形成的保护膜对AC PDP放电特性的影响进行了研究，确定了新颖膜材料的选择方向，探索了使用高发射性能保护膜材料所必须解决的问题，研究结果表明，用（CaSr)O等混合氧化物制成的保护膜的AC PDP具有比单一氧化物低的工作电压和好的老化特性，但工作电压稳态范围却较窄。研究结果还表明氧化物混合的比例不同，ACPDP的工作电压和稳态范围不同，大约在CaO(或MgO)与SrO的重量比达到1：3时，器件的工作电压最低。     

全息光栅掩模制备中的光刻胶薄膜特性控制研究

本文对全息光栅掩模制备中光刻胶薄膜的应力与厚度均匀性问题进行了研究。应用干涉法及Stoney公式计算的分析结果,对SiO2基底上光刻胶薄膜的应力进行了研究。对膜厚的均匀性采用干涉显微镜在同一样品,不同直径上多点测量的方法,初步得出光刻胶薄膜膜厚均匀性的分布规律。分组变换加速度,转速,匀胶时间等参数,并对结果进行比较,发现在匀胶转速相同的前提下,光刻胶薄膜应力值随加速度的降低面减小,光刻胶薄膜的均匀性随加速度的增加而变好。在3000rpm至4000rpm的低转速时,光刻胶薄膜样品的膜厚均匀性好。出此,在全息光栅匀胶工艺中,要选择适当的转速的加速度,以得到应力较小和均匀性较好的光刻胶薄膜。与此同时,薄膜膜厚均匀性呈现出中间薄,边缘较厚的规律。     

Excimer Laser Projection Photoablation Patterning of Metal Thin Films for Fabrication of Microelectronic Devices and Displays

A nonlithographic process is demonstrated for patterning Al, Cr, Cu, Ni, Ti, and W thin films, which are widely used in microelectronic and display fabrication. A projection photoablation process using 248-nm-deep ultraviolet radiation from a KrF excimer laser was used to pattern a polyimide film coated on a SiN layer deposited on glass. The photoablation-patterned polyimide film was used as a sacrificial layer in a lift-off patterning process for the metal films, which resulted in clean metal patterns with fine line-edge definition being fabricated after lift-off. This process provides a simpler and more economical patterning technique compared to conventional lithography methods, eliminating the developing and etching steps.     

飞秒激光加热多层金属薄膜的热响应

采用微观双曲两步热传导模型,研究了飞秒脉冲激光加热过程中多层金属薄膜的热响应。利用界面连续条件,推得三层金属薄膜各层薄膜内电子温度和晶格温度在拉普拉斯域内的解析表达式。通过拉普拉斯数值反变换,计算并绘制了100nm单层Au膜和34nmAu/33nmCr/33nmAu三层膜在飞秒脉冲激光加热过程中各层薄膜内电子温度和晶格温度沿薄膜厚度的分布曲线。数值结果表明,激光加热过程中不仅电子与晶格之间存在强烈的非平衡热行为,不同金属材料薄膜界面上金属晶格温度也具有急剧的非平衡行为。同时讨论了多层薄膜温度分布特点及其与薄膜材料参数的关系。     

Two-step fabrication of thin film encapsulation using laser assisted chemical vapor deposition and laser assisted plasma enhanced chemical vapor deposition for long-lifetime organic light emitting diodes

A thin film encapsulation layer was fabricated through two-sequential chemical vapor deposition processes for organic light emitting diodes (OLEDs). The fabrication process consists of laser assisted chemical vapor deposition (LACVD) for the first silicon nitride layer and laser assisted plasma enhanced chemical vapor deposition (LAPECVD) for the second silicon nitride layer. While SiN_x thin films fabricated by LAPECVD exhibits remarkable encapsulation characteristics, OLEDs underneath the encapsulation layer risk being damaged during the plasma generation process. In order to prevent damage from the plasma, LACVD was completed prior to the LAPECVD as a buffer layer so that the laser during LACVD did not damage the devices because there was no direct irradiation to the surface. This two-step thin film encapsulation was performed sequentially in one chamber, which reduced the process steps and increased fabrication time. The encapsulation was demonstrated on green phosphorescent OLEDs with I–V-L measurements and a lifetime test. The two-step encapsulation process alleviated the damage on the devices by 19.5% in external quantum efficiency compared to the single layer fabricated by plasma enhanced chemical vapor deposition. The lifetime was increased 3.59 times compared to the device without encapsulation. The composition of the SiNx thin films was analyzed through Fourier-transform infrared spectroscopy (FTIR). While the atomic bond in the layer fabricated by LACVD was too weak to be used in encapsulation, the layer fabricated by the two-step encapsulation did not reveal a Si–O bonding peak but did show a Si–N peak with strong atomic bonding.     

SrCaO Protective Layer for High-Efficiency PDPs

The sustain pulse voltage of the panel for 66-kPa Ne + Xe (5%-30%) is 20%-40% lower with a Sr_0.62Ca_0.38O protective layer than with a MgO protective layer. At a normal sustain voltage of 160-200 V, the luminous efficiency of the panel with the Sr_0.62 Ca_0.38O protective layer for Xe (30%) is about twice as high as with the MgO protective layer for Xe (10%). The luminances of these panels are almost the same. This high efficiency at normal sustain pulse voltage and normal luminance is obtained through the combined use of the Sr_0.62Ca_0.38O protective layer and high Xe content. With regard to ion bombardment, the Sr_0.62Ca_0.38O film has a 4.5 times longer life than SrO film and nearly 80% of the life of MgO film. We also calculated the values of theoretical secondary electron emission yield gamma_imin of MgO, SrO, and CaO without energy bands in the band gap for rare gas ions and found that [ gamma_imin of MgO] les [gamma_imin of CaO] < [gamma_imin of SrO] except for the one case with He. The breakdown voltage decreases with higher gamma_imin values. As expected, the discharge voltage of the panel is much lower with the SrO protective layer than with the MgO protective layer. The discharge voltages of the panels with Sr_0.62Ca_0.38O and SrO protective layers are almost the same. These findings show that the life of the SrO protective layer can be made 4.5 times longer without any increase in the discharge voltage by adding CaO (40 at.%)     

Thermosonic bonding of gold wire onto a copper pad with titanium thin-film deposition

A novel thermosonic (TS) bonding process for gold wire bonded onto chips with copper interconnects was successfully developed by depositing a thin, titanium passivation layer on a copper pad. The copper pad oxidizes easily at elevated temperature during TS wire bonding. The bondability and bonding strength of the Au ball onto copper pads are significantly deteriorated if a copper-oxide film exists. To overcome this intrinsic drawback of the copper pad, a titanium thin film was deposited onto the copper pad to improve the bondability and bonding strength. The thickness of the titanium passivation layer is crucial to bondability and bonding strength. An appropriate, titanium film thickness of 3.7 nm is proposed in this work. One hundred percent bondability and high bonding strength was achieved. A thicker titanium film results in poor bond-ability and lower bonding strength, because the thicker titanium film cannot be removed by an appropriate range of ultrasonic power during TS bonding. The protective mechanism of the titanium passivation layer was interpreted by the results of field-emission Auger electron spectroscopy (FEAES) and electron spectroscopy for chemical analysis (ESCA). Titanium dioxide (TiO₂), formed during the die-saw and die-mount processes, plays an important role in preventing the copper pad from oxidizing. Reliability of the high-temperature storage (HTS) test for a gold ball bonded on the copper pad with a 3.7-nm titanium passivation layer was verified. The bonding strength did not degrade after prolonged storage at elevated temperature. This novel process could be applied to chips with copper interconnect packaging in the TS wire-bonding process.     

MgO/TiO2复合薄膜太阳能电池的性能

用sol-gel法和丝网印刷法制备多孔TiO2薄膜,溶液沉积法制备MgO/TiO2复合薄膜。研究了复合薄膜的表面形貌、断面结构、厚度等性能;组装电池,测定了电池的输出特性曲线。结果表明:MgO/TiO2复合薄膜表面平整,内部具有分布较为均匀的空隙,厚度约14μm;MgO薄膜的复合使染料敏化,敏化太阳能电池的开路电压从0.585V提高到0.659V,短路电流从2.057mA提高到2.348mA,从而使光电转换效率从2.24%提高到3.12%;并分析了MgO薄膜复合提高光电流响应的机理。