C波段GaAs单片6位移相器

叙述了一种采用单片集成方式实现的Ｃ波段６位数字移相器的设计技术和研制结果。在ＨＰ－８５１０网络分析仪上的测试结果表明：在５．２￣５．８ＧＨｚ频段，移相器插损为７．５±０．５ｄＢ，输入／输出驻波比好于１．５，均方极相移精度在５．５°以内。     

X波段五位、C波段六位砷化镓单片数字移相器

南京电子器件研究所成功地研制出Ｘ波段五位、Ｃ波段六位砷化镓单片数字移相器,该移相器具有体积小、性能优、功耗极低、转换速度快、重复性和一致性好、可靠性高等优点。电路设计中,采用开关移相网络、桥Ｔ电路和谐振式电路形式来实现移相功能。电路采用先进的ＭＭＩＣ工艺制作。研制的移相器主要性能指标如下：Ｘ波段五位砷化镓单片数字移相器频　　率：ｆ０±５５０ＭＨｚ位　　数：五位（１８０°、９０°、４５°、２２．５°、１１．２５°）插入损耗：８．５ｄＢ相位精度：ＲＭＳ＜２．６°输入驻波：＜１．５输出驻波：＜１．５各…     

S波段单片四位数控移相器

描述了Ｓ波段单片四位数字移相器的电路设计、工艺制作和性能。采用集总元件的高通／低通网络构成移相网络和ＧａＡｓＭＥＳＦＥＴ作为开关控制器件,利用南京电子器件研究所标准的离子注入微波单片集成电路（ＭＭＩＣ）制造工艺,研制出Ｓ波段单片四位数字移相器。该移相器在设计工作频带内１６个移相态具有移相精度高（均方根误差小于１°）、输入输出驻波好（＜１．４）和较低的插入损耗（＜５．５ｄＢ）与插损变化（均方根误差小于０．２ｄＢ）等优良的电特性。芯片尺寸为６．４５ｍｍ×１．４ｍｍ×０．２ｍｍ。     

360°模拟移相器平衡插入损耗和拓宽频带的研究

本文论证了用电阻补偿法平衡360°模拟移相器插入损耗波动的正确性,并推导出确定移相器频带宽度的目标函数,籍CAD给出移相器在最大带宽条件下的有关设计参量,通过直观曲线为选择变容二极管作理论依据。采用微波集成电路工艺制作的模拟移相器在1．3～2．1GHz范围内可获得360°连续可变相移,最大调相电压18V,中心频率线性度优于±2．5％,插入损耗波动小于3dB。     

11.25°毫米波数字移相器的设计

设计了一种Ka波段11.25°数字移相器。采用一前一后加载支线的方式,在Ka波段内研制出11.25°数字移相器。该移相器在30～31GHz工作频带内,驻波比小于1.65,插入损耗小于3dB,固定相移11.25°,相位精度达到±3°。     

360°线性移相器

本文对一种360°移相器线性条件进行了分析。从线性要求出发,求出了对变容管的引线电感及结电容的最大值和最小值的要求。并研制了一个工作于11GHz 的360°移相器,此移相器在11GHz±100MHz 内线性度优于±3.8%,损耗为6.2±0.7dB,移相误差≤±2°。与国外文献[1]、[3]比较,此移相器在性能指标上是优良的,在理论与实际上一致性良好。     

光纤通信SDH系统用石英晶体振荡器的研制

介绍了压控石英晶体振荡器的原理，设计特点和性能，针对光纤通信ＳＤＨ系统上的时钟频率源的基本原理和ＳＤＨ的网同步对网络单元时钟的要求，采有了适当频率温度曲线的谐振器，变容二极管移相器，高性能的放大电路，波形转换电路，振荡器具有高的稳定度，良好的调谐范围和占空比，当环境温度在０℃，到７０℃范围内变化时，作为网络单元时钟的压控振荡器的频率漂移优于±１ＰＰｍ，秒稳优于２．５×１０＾－９／秒。     

宽频带L波段360°模拟信号移相器的设计

该文介绍了宽频带360°模拟移相器的设计理论。针对移相器的线性调相、平衡插入损耗波动、宽频带等进行了详细的探讨,且推导出确定移相器频带宽度的目标函数。用CAD方法迅速而准确地优化各网络设计参量。采用微波集成电路工艺制作的L波段模拟移相器在1.3～2.1GHz范围内可获得360°连续可变相移,最大调相电压18V,中心频率线性度优于±2.5％,插入损耗波动小于3dB。综合性能均优于国内报道的移相器。     

100 MHz中频移相器的一种设计方法

提出了中频移相器的一种设计方法,分析了移相器的工作原理,推导了移相器的幅相特性, 并将其应用于毫米波雷达正交解调器的信号变换中,实现了对输入信号相位在0°～180°之间的连续调节.     

一种E 面波导枝节加载型移相器

文中介绍了一种E 面波导枝节加载型移相器的设计和制造。该移相器为F 波段45°固定移相器,主 通道采用三阶E 面短路波导枝节加载结构。为了方便测试和未来应用,研制了F 波段E 面波导90°相移电桥功分 器,一路为参考通道,另一路加载45°移相器的移相主通道。对功分器的两通路进行了对比测试,测试结果表明两通 道在100~110 GHz 频段内,相位差45°±2°,差损值低于0. 4 dB。     

A Ku‐Band 5‐Bit Phase Shifter Using Compensation Resistors for Reducing the Insertion Loss Variation

This paper describes the performance of a Ku‐band 5‐bit monolithic phase shifter with metal semiconductor field effect transistor (MESFET) switches and the implementation of a ceramic packaged phase shifter for phase array antennas. Using compensation resistors reduced the insertion loss variation of the phase shifter. Measurement of the 5‐bit phase shifter with a monolithic microwave integrated circuit demonstrated a phase error of less than 7.5° root‐mean‐square (RMS) and an insertion loss variation of less than 0.9 dB RMS for 13 to 15 GHz. For all 32 states of the developed 5‐bit phase shifter, the insertion losses were 8.2 ± 1.4 dB, the input return losses were higher than 7.7 dB, and the output return losses were higher than 6.8 dB for 13 to 15 GHz. The chip size of the 5‐bit monolithic phase shifter with a digital circuit for controlling all five bits was 2.35 mm × 1.65 mm. The packaged phase shifter demonstrated a phase error of less than 11.3° RMS, measured insertion losses of 12.2 ± 2.2 dB, and an insertion loss variation of 1.0 dB RMS for 13 to 15 GHz. For all 32 states, the input return losses were higher than 5.0 dB and the output return losses were higher than 6.2 dB for 13 to 15 GHz. The size of the packaged phase shifter was 7.20 mm × 6.20 mm.     

Fin-line Pin diode BPSK and QPSK modulators

A low insertion lose fin-line PIN diode phase shifter is presented. 90° and 180° phase shifters are realized respectively. Phase error less than 5° and bandwidth 3 GHz at Ka band are achieved. The insertion loss is better than 0.5dB. The BPSK and QPSK modulators consisting of this phase shifter and fin-line coupler are also given. The circuits and results are given.     

Low-loss p-i-n diode for high-power MIC phase shifter

Low-loss p-i-n diodes designed for installation in an MIC 3-bit F-band phase shifter have been fabricated from bulk-grown silicon wafers with deep-diffused contact layers. The breakdown potential of these diodes exceeds 1000 V. The p-i-n diodes have a series resistance of 0.24 Ω at a forward current of 50 mA and have aQof 800 at -40-V bias. Each diode in a 180° bit phase shifter can handle 3.5-kW peak power. The 3-bitF-band phase shifter constructed with six p-i-n diodes can sustain 5-kW peak power (50-µs pulse, 0.8-percent duty cycle). The phase shifter has an average loss of 1 dB under 50-mA forward bias and -40-V reverse bias.     

Compact broadband microstrip 90° phase shifter

A compact broadband planar 90° phase shifter is presented in this letter. By loading the transmission line with M-shaped open stub, the proposed new phase shifter can achieve both compact size and wide bandwidth. Design equations are also given to reveal the key factors that affect the operation bandwidth of the phase shifter. For demonstration, one sample 90° phase shifter is designed, fabricated and measured. Results indicate that the designed phase shifter can realise a wide bandwidth from 2.7 GHz to 6 GHz, referring to a criterion of 6.2° phase deviation.     

Design of novel wideband reflective phase shifters with wide range of phase applications

This paper presents wideband compact differential reflective phase shifter based on the double layer slot-coupled coupler configuration. This novel phase shifter arrangement consists of a 3-dB hybrid coupler with the coupled and transmission ports terminated with rectangular and elliptically shaped microstrip loads. By altering the ports termination of the coupler, phase shifters propose differential phase ranging from −90° to +90° over 1.3–5.9G Hz frequency band. To achieve different range of phase performance, the proper reactance is calculated at the outputs of coupler. These reactances are transformed to the elliptical or rectangular-shaped microstrip load with various dimensions for every phase shifter. The calculation and simulations results show that the developed circuits could provide ±30°, ±60°, ±45° and ±90° differential phase shifts. For verification of this wideband phase shifter design method, two phase shifter example with rectangular and elliptical load termination is fabricated and measured. The measured return loss of the phase shifter with elliptically load is better than 10 dB over 1.3–5.9G Hz frequency band as well as insertion loss is less than 1 dB. The phase shift deviation is less than 2.1°. The results demonstrate that the proposed phase shifters are well suited for use in GPS/LTE/WiMax/WLAN frequency bands.     

Electrically Tunable Reflective Terahertz Phase Shifter Based on Liquid Crystal

We present a reflective spatial phase shifter which operates at terahertz regime above 325 GHz. The controllable permittivity of the nematic liquid crystals was utilized to realize a tunable terahertz (THz) reflective phase shifter. The reflective characteristics of the terahertz electromagnetic waves and the liquid crystal parameters were calculated and analyzed. We provide the simulation results for the effect of the incident angle of the plane wave on the reflection. The experiment was carried out considering an array consisting of 30?×?30 patch elements, printed on a 20?×?20 mm quartz substrate with 1-mm thickness. The phase shifter provides a tunable phase range of 300° over the frequency range of 325 to 337.6 GHz. The maximum phase shift of 331° is achieved at 330 GHz. The proposed phase shifter is a potential candidate for THz applications, particularly for reconfigurable reflectarrays.     

基于开口谐振环的毫米波差分移相器设计

该文提出了一种工作于30～32 GHz的毫米波差分移相器,其尺寸为30 mm×18 mm×0.127 mm。该移相器以微带线为基础进行设计,由中心圆环及一对开口谐振环(SRR)共同组成。通过改变中心圆环的半径大小实现在工作频段内的S参数优化。以参考线的输出相位为基准,通过改变开口谐振环半径依次实现22.5°、45°、90°的差分移相。结果表明,在所设计的频段内,该移相器的回波损耗小于-10 dB,插入损耗小于1.4 dB,仿真最大移相误差小于5°。该移相器结构简单,便于制造。通过实物样品测试,验证了其仿真结果的可靠性。     

向列型液晶移相器

通过分析向列型液晶移相器的原理、结构及可以达到的技术指标,指出采用倒置微带结构设计的液晶移相器的移相度可以达到360°,品质因数可以达到12°/dB,而且运行电压只有30 V左右。在此基础上,提出了该种移相器研究中存在的问题以及改进的办法。向列型液晶移相器具有独特的优势和发展潜力,不久的将来会在相控阵雷达以及卫星通讯等领域起到关键作用。     

Ku波段GaAs单片集成移相器

本文报道了一种工作在16.0～17.0GHz单片集成180°的移相器.文中通过对无源工作的GaAs MESFET的建模,分析了影响移相器性能的主要参数,以及这些参数的最佳取值.制作在2.45×2.80×0.2mm芯片上的移相器其参数为:插损小于4.03dB,输入电压驻波比小于1.66,输出电压驻波比小于1.71,相移偏差在12.5°以内.