Er2O3／Si外延薄膜表面和界面组分研究

利用X射线光电子能谱方法对Si基Er2O3外延薄膜的化学组分进行了分析。在X射线照射样品和氩离子轰击使样品减薄的过程中没有诱发其他的化学反应。研究了清洁的Si和有氧化层的Si衬底上外延生长的Er2O3薄膜的表面和界面化学组分情况,并对上述两种不同的衬底上外延生长Er2O3薄膜的生长模式进行初步探讨。     

Broadband NIR emission in sol-gel Er(3+)-activated SiO2-Ta2O5 glass ceramic planar and channel waveguides for optical application

An Er(3+)-doped SiO2:Ta2O5 optical channel waveguide and nanocomposite were prepared by the sol-gel route at a Si:Ta 50:50 molar ratio. Channels with an excellent surface profile were easily and quickly fabricated by focusing a femtosecond laser onto the surface of multilayered films deposited on SiO2/Si substrates. In parallel, the same sol used to prepare the film was annealed at 900, 1000, and 1100 degrees C for 2 h, to get the nanocomposite materials. A broadband NIR emission around 1538 nm, assigned to the 4I13/2 --> 4I15/2 transition of the Er3+ ions was observed in the nanocomposites of amorphous SiO2 containing dispersed Ta2O5 nanocrystals. The 4I13/2 lifetime and emission bandwidth depend on the annealing temperature. In conclusion, Er(3+)-doped SiO2:Ta2O5 channel waveguides and nanocomposites are promising materials for photonic applications.     

Photoluminescence properties of the Yb:Er co-doped Al2O3 thin film fabricated by microwave ECR plasma source enhanced RF magnetron sputtering

The Yb:Er co-doped Al₂O₃ thin film was deposited on oxidized silicon wafers by microwave ECR plasma source enhanced RF magnetron sputtering, and annealed from 800 °C to 1000 °C. The photoluminescence at 1.53 μm of thin film was obtained under room temperature. The mixture phase structure of γ and θ is observed by XRD, and the compositions of the thin film are investigated by EPMA. The maximum PL intensity was achieved with O₂:Ar at 1:1, annealing temperature at 900 °C, and experimental ratio of Yb:Er at 1:3.6. The energy transfer mechanism between Er and Yb ions is supported by theoretical analysis and experiment results.     

Investigation of bonding characteristics between Si quantum dots and a SiO2 matrix

In order to understand and control the properties of Si quantum dot (QD) superlattice structures (SLS), it is necessary to investigate the bonding between the dots and their matrix and also the structures' crystallinities. In this study, a SiOx matrix system was investigated and analyzed for potential use as an all-silicon multi-junction solar cell. Si QD SLS were prepared by alternating deposition of Si rich SiOx (x = 0.8) and SiO2 layers using RF magnetron co-sputtering and subsequent annealing at temperatures between 800 and 1,100 degrees C under nitrogen ambient. Annealing temperatures and times affected the formation of Si QDs in the SRO film. Raman and FTIR spectra revealed that nanocrystalline Si QDs started to precipitate after annealing at 1,100 degrees C for 1 hour. TEM images clearly showed SRO/SiO2 SLS and Si QDs formation in SRO layers after annealing at 1,100 degrees C for 2 hours. XPS analysis showed that Si-Si and Si-O bonding changes occurred above 1,100 degrees C. XPS analysis also revealed that Si QD SLSs started stabilizing after 2 hours' annealing and approached completion after 3 hours'. The systematic investigation of Si QDs in SiO2 matrices and their properties for solar cell application are presented.     

高声子能量氧化物对掺铒碲酸盐玻璃光谱性质的影响

在研制的Er3+/Ce3+共掺低声子能量碲酸盐玻璃(TeO2-Bi2O3-TiO2)中,分别引入高声子能量WO3、SiO2和B2O3氧化物组分,测试了玻璃样品400~1700 nm范围内的吸收光谱、1.53μm波段荧光谱、Er3+离子荧光寿命和拉曼光谱,结合McCumber理论计算了Er3+离子光谱参数.结果表明:高声子能量氧化物组分的引入,能使声子参与的Er3+/Ce3+离子间能量传递过程变得更为有效,增加了Er3+离子亚稳态能级4I13/2上粒子数积累,从而增强1.53μm波段荧光发射.另外,高声子能量氧化物组分的引入还可以增加荧光半高宽(FWHM)和带宽品质因子(σe×FWHM).研究结果对于获取具有优异光谱特性的掺Er3+光纤放大器(EDFA)的玻璃基质具有实际意义.     

Photoluminescence properties of the Yb:Er co-doped Al2O3 thin film fabricated by microwave ECR plasma source enhanced RF magnetron sputtering

The Yb:Er co-doped Al₂O₃ thin film was deposited on oxidized silicon wafers by microwave ECR plasma source enhanced RF magnetron sputtering, and annealed from 800 °C to 1000 °C. The photoluminescence at 1.53 μm of thin film was obtained under room temperature. The mixture phase structure of γ and θ is observed by XRD, and the compositions of the thin film are investigated by EPMA. The maximum PL intensity was achieved with O₂:Ar at 1:1, annealing temperature at 900 °C, and experimental ratio of Yb:Er at 1:3.6. The energy transfer mechanism between Er and Yb ions is supported by theoretical analysis and experiment results.     

Energy shifts of Si oxidation states in the system of Si nanocrystals embedded in SiO2 matrix

Energy shifts in the Si 2p levels of the five Si oxidation states Sin+ (n = 0, 1, 2, 3, 4) in the system of Si nanocrystals embedded in SiO2 matrix have been determined. The thermal annealing effect on the energy shifts has been studied. The result suggests that the Si nanocrystals and the SiO2 are thermally stable but the annealing can cause some structural deformations such as changes in the bond lengths and bond angles for the suboxides Si2O and SiO. The energy shifts generally show a linear dependence on the oxidation state n, suggesting that the energy shifts could be mainly determined by the nearest-neighbor oxygen atoms. It is shown that the chemical structures of the system are similar to those of the conventional SiO2/Si system in terms of the energy shifts.     

离子注入制备掺Er富硅氧化硅材料光致发光

利用离子注入方法制备了掺Er富硅氧化硅材料,用XRD,TEM方法研究材料微观结构,并测量了样品的光致发光(PL),研究了发光强度随测量温度的变化。试验表明:在1173K以上退火,注入硅集聚,形成φ(2-4)nm的纳米晶硅(nc-Si),纳米晶硅外面包裹非晶硅(a-Si),注入的Er离子分布在非晶硅中。通过非晶硅与硅纳米晶相耦合,非晶硅吸收部分硅纳米晶对Er的激发能量,降低了Er的激发效率;在T>150K时,激发态Er与非晶硅间的能量背迁移降低了Er的发光效率。     

Photoluminescence of nc-Si:Er thin films obtained by physical and chemical vapour deposition techniques: The effects of microstructure and chemical composition

Erbium doped nanocrystalline silicon (nc-Si:Er) thin films were produced by reactive magnetron rf sputtering and by Er ion implantation into chemical vapor deposited Si films. The structure and chemical composition of films obtained by the two approaches were studied by micro-Raman scattering, spectroscopic ellipsometry and Rutherford backscattering techniques. Variation of deposition parameters was used to deposit films with different crystalline fraction and crystallite size. Photoluminescence measurements revealed a correlation between film microstructure and the Er³⁺ photoluminescence efficiency.     

Photoluminescence and Optical Transition Dynamics of Er3+ Ions in Porous Si

1.IntroductionThereisagrowinginterestinrare-earthsd0pedSionaccount0fitspotentialapplicati0nsinSi-basedoptoelectronicdevicesandsystems.InparticularEr-dopedSihasattractedmuchattentionbecauseEri0ninitstriva1entstate(Er'+)showssharpphotolumi-nescence(PL)around1.54pm,oneofthestandardwavelengthsinsilicafiber-basedopticalc0mmunica-tiontechnology-Alth0ughal0tofpapersonthed0p-.ingandPLofEr3+havebeenpublished{1],thereisalack0fsufficientunderstanding0ftheluminescencemechanismatpresent.Inthecase0fEr-…     

Annealing characteristics of Si doped amorphous silica films by rf sputtering

Si doped amorphous silica films were prepared by rf magnetron sputtering technique. As-deposited films which had relatively low Si dopant were annealed in inert atmosphere, and spectroscopic analyses were performed for as-deposited and all the annealed samples by infrared (IR) absorption, X-ray fluorescence analysis, X-ray photoelectron spectroscopy (XPS) and 29Si magic angle sample spinning nuclear magnetic resonance spectroscopy (29Si MAS-NMR). When the sample was annealed at 800°C, the IR absorption peak located at 1080 cm–1 shifted to slightly higher wave number. On the other hand, the decrease of Si clusters or Si–Si bonds in as-deposited film was deduced from X-ray fluorescence and XPS spectra for the sample annealed at 800°C. These annealing characteristics of the films prepared in this study were discussed based on the random bonding model of SiOx film, and the spectral variations with thermal annealing were interpreted by the rearrangement of Si and O atoms in as-deposited films, rather than the simple clustering of excess Si atoms.     

Electrical Properties of Sputter-deposited ZrO2-based Pt/ZrO2/Si Capacitors

Pt/ZrO2/Si sandwich structures where ZrO2 is deposited by radio frequency （r.f.） magnetron sputtering using a Zr target in an atmosphere of O2/Ar gas mixture, were fabricated and the effects of the O2/Ar flow ratio in the reactive sputtering process, the annealing temperature, the ZrO2 film thickness on the structure, the surface roughness of ZrO2 films and the electric properties of Pt/ZrO2/Si metal-oxide-semiconductor （MOS） capacitors were investigated. The optimum process parameters of the Pt/ZrO2/Si capacitor based on reactively sputtered-ZrO2 determined in such a way as the capacitance is maximized and the leakage current, the oxide charge, and the interface trap density are minimized that is the O2/Ar flow ratio of 1.5, the annealing temperature of 800℃, and the film thickness of 10 nm. Also the conduction mechanism in the Pt/ZrO2/Si capacitor has been discussed.     

Improved infrared emissions of Er(3+)-Tm3+ co-doped Al2O3 thin films: the role of cross relaxation among rare earth ions

We report the infrared emissions of Er(3+)-Tm3+ co-doped amorphous Al2O3 thin films pumped at 791 nm by a Ti:sapphire laser. The as-deposited films were annealed to improve the photoluminescence performance. Three cross relaxation channels among Er(3+)-Tm3+ and Tm(3+)-Tm3+ ions incorporated in the films were investigated as annealing temperature increases especially from 800 to 850 degrees C. In order to understand the Stark effect and cross relaxations, the photoluminescence spectra were deconvoluted by Gaussian fittings. Our results indicate that the luminescence intensity of 1.62 microm in comparison to 1.5 microm can be enhanced by the cross relaxation process [Er3+ (4I13/2) + Tm3+ (3H6) --> Er3+ (4I15/2) + Tm3+ (3F4)], and the longer-wavelength side of Er3+ emission can be improved by the CR process [Er3+ (4I15/2) + Tm3+ (3H4) --> Er3+ (4I3/2) + Tm3+ (3F4) at expense of the Tm3+ 1.47 microm emission which is also maybe quenched by the CR effect between themselves. These results suggest one possible approach to achieve broadband infrared emissions at the wavelength region of 1.45-1.65 microm from the Er(3+)-Tm3+ co-doped systems.     

Enhanced photoluminescence response of Er-Si nanoparticle codoped Al2O3 films by controlled synthesis in the nanoscale and thermal processing

Nanostructured Er³⁺-Si nanoparticles (NPs) codoped Al₂O₃ films were synthesized by a one step laser based deposition process which allows to form the Si NPs in situ at room temperature, and to control their size and separation with the Er ions in the nanoscale. Two different thermal annealing treatments are studied in order to optimize the photoluminescence (PL) emission: rapid thermal annealing (RTA) at 900 °C during 2 min, and conventional furnace step annealing at different temperatures up to 750 °C for 1 h. After RTA process the films show an important enhancement on the photoluminescence lifetime values which is related to a reduction of the non-radiative decay channels. Nevertheless, the Si NPs to Er ions energy transfer is strongly reduced. In contrast after conventional furnace annealing up to 700 °C, although there is only a moderate increase of the photoluminescence lifetime values, the excitation of Er ions through Si NPs is still active and as a consequence a large enhancement of the photoluminescence intensity with respect to the Er-only doped film is achieved. These different behaviours are most likely related to structural and chemical changes in the Er environment upon the different annealing processes.     

Broadband downconversion in Bi3+, Yb3+-Co-doped YVO4 phosphor

Yttrium vanadate phosphors co-doped with Bi3+ and Yb3+ ions have been prepared via the solid-state reaction. The phosphors were characterized by various methods including X-ray diffraction, photoluminescence excitation and photoluminescence spectra. Upon ultraviolet (UV) light excitation, an intense near-infrared (NIR) emission of Yb3+ corresponding to the transition of 2F(5/2) --> 2F(7/2) peaking at 985 nm was observed as a result of energy transfer from O2(-)-V5+ or Bi3+-V5+ charge transfer state (CTS) to Yb3+. A broad excitation band ranging from 250 to 375 nm was recorded when the Yb3+ emission was monitored, which suggests an efficient energy transfer from CTS to Yb3+ ions. The dependence of Yb3+ doping concentration on the visible emission, the NIR emission and decay lifetime has been investigated. The results of visible and NIR spectral evolution with temperature indicate that the mechanism for the NIR-emission is mainly phonon-assisted energy transfer at room temperature, while the mechanism is mainly cooperative energy transfer at low temperature. The YVO4:Bi3+, Yb3+ phosphor has prospects for realizing high efficiency crystalline Si solar cells by converting broadband UV energy into NIR light.     

Growth of nickel silicides in Si and Si/SiOx core/shell nanowires

We exploited the oxide shell structure to explore the structure confinement effect on the nickel silicide growth in one-dimensional nanowire template. The oxide confinement structure is similar to the contact structure (via hole) in the thin film system or nanodevices passivated by oxide or nitride film. Silicon nanowires in direct contact with nickel pads transform into two phases of nickel silicides, Ni31Si12 and NiSi2, after one-step annealing at 550 °C. In a bare Si nanowire during the annealing process, NiSi2 grows initially through the nanowire, followed by the transformation of NiSi2 into the nickel-rich phase, Ni31Si12 starting from near the nickel pad. Ni31Si12 is also observed under the nickel pads. Although the same phase transformations of Si to nickel silicides are observed in nanowires with oxide confinement structure, the growth rate of nickel silicides, Ni31Si12 and NiSi2, is retarded dramatically. With increasing oxide thickness from 5 to 50 nm, the retarding effect of the Ni31Si12 growth and the annihilation of Ni2Si into the oxide confined-Si is clearly observed. Ni31Si12 and Ni2Si phases are limited to grow into the Si/SiOx core-shell nanowire as the shell thickness reaches 50 nm. It is experimental evidence that phase transformation is influenced by the stressed structure at nanoscale.     

Mg2Si／Si异质结的制备

采用射频磁控溅射和低真空退火方法制备Mg2Si／Si异质结,首先在n型Si（111）衬底上沉积Mg膜,经低真空退火形成Mg2Si／Si异质结,Mg膜厚度约为484nm,退火后形成的Mg2Si薄膜厚度约400nto,利用xRD和sEM分别研究了Mg2Si薄膜的晶体结构和表面形貌,霍尔效应结果表明,制备的Mg2Si薄膜呈现n型导电特性。     

Au/(Si/SiO2)/p型Si结构的可见电致发光研究

Ｓｉ／ＳｉＯ２薄膜采用射频磁控溅射技术制备,当正向偏压大于５Ｖ时即可观测到来自不同Ｓｉ层厚度的Ａｕ／（Ｓｉ／ＳｉＯ２）／ｐ－Ｓｉ结构在室温下的可见电致发光,其发光谱峰位均位于６６０ｎｍ处,测得的各种储藏坟下的发光峰位不随正向偏压的升高而移动。突验结果表明光发射主要来自于ＳｉＯ２层中的发光中心上的复合发光。     

不同射频溅射功率下直接制备Ca_2Si薄膜(英文)

磁控溅射系统在恒定Ar气压和Ar气流流量下,使用不同射频溅射功率在Si(100)衬底上分别沉积Ca薄膜;随后,800℃真空退火1 h.立方相的Ca2Si薄膜首次、单独、直接生长在Si(100)衬底上.实验结果指出,在多相共生的Ca-Si化合物中,沉积Ca薄膜时的射频溅射功率影响了立方相Ca2Si薄膜的质量;最优化的溅射功率是85 W.另外,退火温度为800℃时,有利于单一相Ca2Si的独立生长.并且,退火时间也是关键因素.     

Nanosecond field-induced quenching of the luminescence from Er-doped silicon nanocrystals

Er-doped Si-rich SiO2 gate oxide layers containing silicon nanocrystals are prepared by implantation of Si+ and Er+ into SiO2 thin films. The photoluminescence from both Si nanocrystals around 700-850 nm and Er3+ ions at 1.54 microm is strongly quenched by applying electric field in the Si-rich oxide layer. The quenching time and the recovery time of the photoluminescence from Si nanocrystals are less than 50 ns under pulsed field modulation. The quenching rate of the luminescence increases with increasing the density and reducing the size of the silicon nanocrystals. Our results indicate that the fast quenching process originates from the quantum confined Stark effect and enhanced exciton ionization by carrier tunneling between the silicon nanocrystals under the high electric field.