A self-timed divider using a new fast and robust pipeline scheme

This paper investigates the potential of self-timed property of differential cascode voltage switch logic (DCVSL) circuits, and examines architectural techniques for achieving self-timing in DCVSL circuits. As a result, a fast and robust handshake scheme for dynamic asynchronous circuit design is proposed. It is novel and more general than other similar schemes. The proposed self-timed datapath scheme is verified by an 8-bit divider which is implemented using AMS 0.6-μm CMOS technology, and the chip size is about 1.66 mm×1.70 mm. The chip testing results show that the divider functions correctly and the latency for 8-bit quotient-digit generation is 17 ns (about 58.8 MHz)     

A zero-overhead self-timed 160-ns 54-b CMOS divider

The authors describe the design of a custom integrated circuit for the arithmetic operation of division. The chip uses self-timing to avoid the need for high-speed clocks and directly concatenates precharged function blocks without latches. Internal stages form a ring that cycles without any external signaling. The self-timed control introduces no serial overhead, making the total chip latency equal just the combinational logic delays of the data elements. The ring's data path uses embedded completion encoding and generates the mantissa of a 54-b (floating-point IEEE double-precision) result. Fabricated in 1.2-μm CMOS, the ring occupies 7 mm² and generates a quotient and done indication in 45 to 160 ns, depending on the particular data operands     

An efficient self-timed adder realized using conventional CMOS standard cells

Usually, efficient self-timed adders are realized using the dynamic differential cascode voltage switch logic. This allows the end-completion to be easily detected, but it makes circuit design and testing very complex, compelling the production of full-custom layouts and leading to a very long time before marketing. This paper presents a new 56-bit high-speed self-timed adder realized with conventional AMS 0.35 μm CMOS standard cells. The proposed circuit uses overlapped execution circuits, which exploit the initialization time that always elapses between two consecutive addition operations. Compared to several self-timed adders existing in the literature, the addition circuit proposed here shows brilliant advantages in terms of speed-performance, silicon area occupancy and power dissipation.     

Level Shifters and DCVSL for a Low-Voltage CMOS 4.2-V Buck Converter

In this paper, high-voltage (HV)-tolerant level shifters with combinational functionality are proposed based on differential cascode voltage switch logic (DCVSL). These level shifters are tolerant to supply voltages higher than the process limit for individual CMOS transistors. The proposed HV DCVSL level shifters are particularly useful when it is mandatory to constrain the output using a logic function during out of the normal mode periods (power-up, power-down, reset, etc.). These HV-tolerant logic circuits were used in the power block of a buck converter designed in a standard 3.3-V 0.13-$muhbox{m}$ CMOS process, powered by an input voltage range from 2.7 to 4.2 V. Simulation and experimental results of the buck are analyzed, and the topology is evaluated.      

A leakage-tolerant low-swing circuit style in partially depleted silicon-on-insulator CMOS technologies

The parasitic bipolar leakage and the large subthreshold leakage due to high floating-body voltage reduce the noise margin and increase the delay of the circuits in the partially depleted silicon-on-insulator (PD/SOI). Differential cascode voltage switch logic (DCVSL) has circuit topologies susceptible to the leakage currents. In this paper, we propose a new circuit style to effectively handle the leakage problems in PD/SOI DCVSL. The proposed low-swing DCVSL (LS-DCVSL) uses the small internal swing to prevent the body of evaluation transistors from being charged to high voltage and, hence, suppress the leakages in DCVSL. Simulation results show that the proposed LS-DCVSL five-input XOR circuit is 33% faster than DCVSL five-input XOR circuit. In addition, the proposed circuit does not experience noise margin reduction due to pass-gate leakage.     

Clock-delayed domino for dynamic circuit design

Clock-delayed (CD) domino is a self-timed dynamic logic family developed to provide single-rail gates with inverting or noninverting outputs. CD domino is a complete logic family and is as easy to design with as static CMOS circuits from a logic design and synthesis perspective. Design tools developed for static CMOS are used as part of a methodology for automating the design of CD domino circuits. The methodology and CD domino's characteristics are demonstrated in the design of a 32-b carry look-ahead adder. The adder was fabricated with MOSIS's 0.8-μm CMOS process with scalable CMOS design rules that allow a 1.0-μm drawn gate length. Measurements of the adder show a worst case addition of 2.1 ns. The CD domino adder is 1.6× faster than a dual-rail domino adder designed with the same cell library and technology     

Evaluation of three 32-bit CMOS adders in DCVS logic for self-timedcircuits

The efficient implementation of adders in differential logic can be carried out using a new generate signal (N) presented in this paper. This signal enables iterative shared transistor structures to be built with a better speed/area performance than a conventional implementation. It also allows adders developed in domino logic to be easily adapted to differential logic. Based on this signal, three 32-b adders in differential cascode switch voltage (DCVS) logic with completion circuit for applications in self-timed circuits have been fabricated in a standard 1.0-μm two-level metal CMOS technology. The adders are: a ripple-carry (RC) adder, a carry look-ahead (CLA) adder, and a binary carry look-ahead (BCL) adder. The RC adder has the best levels of performance for random input data, but its delay is significantly influenced by the length of the carry propagation path, and thus is not recommended in circuits with nonrandom input operands. The BCL adder is the fastest but has a high cost in chip area. The CLA adder provides an intermediate option, with an area which is 20% greater than that of the RC adder. Its average delay is slightly greater than that of the other two adders, with an addition time which increases slowly with the carry propagate length even for adders with a high number of bits     

The SDC cell-A novel design methodology for high-speed arithmeticmodules using CMOS/BiCMOS precharged circuits

The shielded dynamic complex-gate (SDC) cell is a cell-based design methodology for generating high-speed modules or macrocells using precharged circuit technology. In order to achieve ultrafast operation, a BiCMOS precharged circuit has been developed. This circuit is about 1.5 to 2.0 times faster than the conventional CMOS precharged circuit. The effect of alpha-particle injection under low-voltage operation has been studied, and CMOS/BiCMOS precharged circuits with alpha-particle-induced noise suppression have been proposed. A 32-b arithmetic and logic unit (ALU) utilizing a BiCMOS SDC cell designed and fabricated with 0.5-μm BiCMOS technology is discussed. The application of the SDC cell design to a mainframe execution unit (parallel adder) is also described     

GaAs trickle transistor dynamic logic

A GaAs dynamic logic gate is proposed which uses a trickle transistor to compensate for leakage from the precharged node. This trickle transistor dynamic logic (TTDL) circuit is configured as a domino logic gate and a differential cascode voltage switch logic (CVSL) gate. Delay chains were implemented in a 1-μm GaAs enhancement/depletion (E/D) process where the depletion-mode FETs (DFETs) and the enhancement-mode FETs (EFETs) have threshold voltages of -0.6 and 0.15 V, respectively, in order to obtain an experimental characterization of these gates. In addition, the TTDL gates were used to implement a 4-b carry-lookahead adder. The adder has a critical delay of 0.8 ns and a power dissipation of 130 mW     

Charge recycling differential logic (CRDL) for low powerapplication

A novel logic family, called charge recycling differential logic (CRDL), has been proposed and analyzed. CRDL reduces power consumption by utilizing a charge recycling technique with the speed comparable to those of conventional dynamic logic circuits. It has an additional benefit of improved noise margin due to inherently static operation. The noise margin problem of true single-phase-clock latch (TSPC) is also eliminated when a CRDL logic circuit is connected to it. Two swing-suppressed-input latches (SSILs), which are introduced for use with CRDL, have better performance than the conventional transmission gate latch. Moreover, a pipeline configuration with CRDL in a true two-phase clocking scheme shows completely race-free operation with no constraints on logic composition. Eight-bit Manchester carry chains and full adders were fabricated using a 0.8 μm single-poly double-metal n-well CMOS technology to verify the relative performance of the proposed logic family. The measurement results indicate that about 16-48% improvements in power-delay product are obtained compared with differential cascode voltage switch (DCVS) logic     

Design and application of CMOS bulk input scheme

This work presents CMOS bulk input differential logic (BIDL) circuits. The bulk input scheme is applied to enable bulk terminals to receive signals. A boost circuit is employed to the bulk terminal of an input device. A multiple-input boost circuit is also developed to improve the flexibility of logic design. A current latch sense amplifier is used to generate a pair of full-swing output signals without dc power dissipation. The devices in the differential logic network are connected in parallel, leading to a low parasitic resistive and capacitive load. The BIDL has better speed and power performance than conventional differential logic circuits. The flexibility of the logic design is greatly improved. The BIDL is applied to a divide-by-128/129 frequency synthesizer using a 0.25-/spl mu/m CMOS process. Measurement results of the test chip indicate that the operating frequency is 2 GHz at a supply voltage of 2.5 V.     

单片化低压低功耗Si CMOS运算放大器的实现

基于新型的折叠共栅共源PMOS差分输入级拓扑、轨至轨AB类低压CMOS推挽输出级模型、低压低功耗LV/LP技术特别考虑和EDA平台的实验设计与模拟仿真,并设计配置了先进的Si 2 mm P阱硅栅CMOS集成工艺技术。已经得到一种具有VT = 0.7 V、电源电压1.1~1.5 V、静态功耗典型值330 mW、75 dB开环增益和945 kHz单位增益带宽的LV/LP运算放大器。该运放可应用于ULSI库单元和诸多相关技术领域,其实践有助于Si CMOS低压低功耗集成电路技术的进一步开发与交流。     

Performance of CMOS differential circuits

Differential CMOS logic family has potential advantages over the standard static CMOS logic family implemented using NAND/NOR logic. These circuits tend to be faster and require fewer transistors. In this paper, various static and dynamic circuit techniques from the differential logic family are evaluated using application circuits like adders and multipliers. Circuits with self-timed characteristics are also considered. Evaluations are performed in terms of area, number of transistors, and propagation delay. Results indicate that in general, dynamic differential circuit techniques are faster than their conventional static counterparts. Further improvement in circuit performance can be achieved by choosing an appropriate differential structure to match logic structure being implemented. Second, even though the circuit techniques such as differential split-level perform better, they may not be widely accepted mainly because of the increase in circuit complexity and cost. Lastly, the self-timed dynamic differential circuit techniques yield considerable improvement in speed without having the problems of charge distribution or race conditions typically associated with the conventional single-ended domino circuit technique     

Low-swing current mode logic (LSCML): A new logic style for secure and robust smart cards against power analysis attacks

A new logic style called low-swing current mode logic (LSCML) is presented. It features a dynamic and differential structure and a low-swing current mode operation. The LSCML logic style may be used for hardware implementation of secure smart cards against differential power analysis (DPA) attacks but also for implementation of self-timed circuits thanks to its self-timed operation. Electrical simulations of the Khazad S-box have been carried out in 0.13 μm PD (partially depleted) SOI CMOS technology. For comparison purpose, the Khazad S-box was implemented with the LSCML logic and two other dynamic differential logic styles previously reported. Simulation results have shown an improved reduction of the data-dependent power signature when using LSCML circuits. Indeed the LSCML based Khazad S-box has shown a power consumption standard deviation more than two times smaller than the one in DyCML and almost two times smaller than the one in DDCVSL.     

A high-speed CMOS circuit for 1.2-Gb/s 16*16 ATM switching

The authors describe a 0.7- mu m CMOS asynchronous transfer mode (ATM) switch circuit of 350 K transistors, the kernel of a fully autonomous 16*16 ATM switching matrix devoted to telecommunications. This matrix is able to switch ATM multiplexes with a throughput of up to 1.2 Gb/s per access line, and was implemented using 16 receiver/transmitter circuits and a control circuit. The architecture of the ATM switch circuit is based on a large embedded and shared dual-access memory. Each chip processes 4-b slices of each incoming multiplex. Seven such chips working in parallel are enough to achieve standard ATM cell switching. Up-to-date test features, such as boundary scan, built-in self-test, and redundancy were implemented in the circuit.<>     

Low Area/Power Synthesis Using Hybrid Pass Transistor/CMOS Logic Cells in Standard Cell-Based Design Environment

This brief presents a logic synthesis flow that depends on the popular Synopsys Design Compiler to perform logic translation and minimization based on the standard cell library with both pass transistor logic (PTL) and CMOS logic cells. The hybrid PTL/CMOS logic synthesis can generate appropriate circuits considering various design constraints. The proposed multilevel PTL logic cells are automatically constructed from only a few basic cells. Postlayout simulations with UMC 90-nm technology are presented based on the standard cell library with pure PTL, pure CMOS, or hybrid PTL/CMOS cells. Experimental results show that, in most cases, pure PTL circuits have smaller area and power, whereas CMOS circuits, in general, have smaller delay.      

Differential current switch logic: a low power DCVS logic family

Differential current switch logic (DCSL), a new logic family for implementing clocked CMOS circuits, has been developed. DCSL is in principle a clocked differential cascode voltage switch logic circuit (DCVS). The circuit topology outlines a generic method for reducing internal node swings in clocked DCVS logic circuits. In comparison to other forms of clocked DCVS, DCSL achieves better performance both in terms of power and speed by restricting internal voltage swings in the NMOS tree. DCSL circuits are capable of implementing high complexity high fan-in gates without compromising gate delay. Automatic lock-out of inputs on completion of evaluation is a novel feature of the circuit. Three forms of DCSL circuits have been developed with varying benefits in speed and power. SPICE simulations of circuits designed using the 1.2 μm MOSIS SCMOS process indicate a factor of two improvement in speed and power over comparable DCVS gates for moderate tree heights     

Asynchronous Computing in Sense Amplifier-Based Pass Transistor Logic

This paper presents the design and implementation of a low-energy asynchronous logic topology using sense amplifier-based pass transistor logic (SAPTL). The SAPTL structure can realize very low energy computation by using low-leakage pass transistor networks at low supply voltages. The introduction of asynchronous operation in SAPTL further improves energy-delay performance without a significant increase in hardware complexity. We show two different self-timed approaches: 1) the bundled data and 2) the dual-rail handshaking protocol. The proposed self-timed SAPTL architectures provide robust and efficient asynchronous computation using a glitch-free protocol to avoid possible dynamic timing hazards. Simulation and measurement results show that the self-timed SAPTL with dual-rail protocol exhibits energy-delay characteristics better than synchronous and bundled data self-timed approaches in 90-nm CMOS.      

Sleep switch dual threshold Voltage domino logic with reduced standby leakage current

A circuit technique is presented for reducing the subthreshold leakage energy consumption of domino logic circuits. Sleep switch transistors are proposed to place an idle dual threshold voltage domino logic circuit into a low leakage state. The circuit technique enhances the effectiveness of a dual threshold voltage CMOS technology to reduce the subthreshold leakage current by strongly turning off all of the high threshold voltage transistors. The sleep switch circuit technique significantly reduces the subthreshold leakage energy as compared to both standard low-threshold voltage and dual threshold voltage domino logic circuits. A domino adder enters and leaves a low leakage sleep mode within a single clock cycle. The energy overhead of the circuit technique is low, justifying the activation of the proposed sleep scheme by providing a net savings in total power consumption during short idle periods.     

Pass transistor with dual threshold voltage domino logic design using standby switch for reduced subthreshold leakage current

Dual threshold voltages domino design methodology utilizes low threshold voltages for all transistors that can switch during the evaluate mode and utilizes high threshold voltages for all transistors that can switch during the precharge modes. We employed standby switch can strongly turn off all of the high threshold voltage transistors which enhances the effectiveness of a dual threshold voltage CMOS technology to reduce the subthreshold leakage current. Subthreshold leakage currents are especially important in burst mode type integrated circuits where the majority of the time for system is in an idle mode. The standby switch allowed a domino system enters and leaves a low leakage standby mode within a single clock cycle. In addition, we combined domino dynamic circuits style with pass transistor XNOR and CMOS NAND gates to realize logic 1 output during its precharge phase, but not affects circuits operation in its evaluation and standby phase. The first stage NAND gates output logic 1 can guarantee the second stage computation its correct logic function when system is in a cascaded operation mode. The processing required for dual threshold voltage circuit configuration is to provide an extra threshold voltage involves only an additional implant processing step, but performs lower dynamic power consumption, lower delay and high fan-out, high switching frequencies circuits characteristics. SPICE simulation for our proposed circuits were made using a 0.18 µm CMOS process from TSMC, with 10 fF capacitive loads in all output nodes, using the parameters for typical process corner at 25 °C, the simulation results demonstrated that our designed 8-bit carry look-ahead adders reduced chip area, power consumption and propagation delay time more than 40%, 45% and around 20%, respectively. Wafer based our design were fabricated and measured, the measured data were listed and compared with simulation data and prior works. SPICE simulation also manifested lower sensitivity of our design to power supply, temperature, capacitive load and process variations than the dynamic CMOS technologies.