基于倒装焊芯片的功率型LED热特性分析

对LED的导散热理论进行了研究,推导出了倒装焊LED芯片结温与封装材料热传导系数之间的关系。通过分析倒装焊LED的焊球材料、衬底粘结材料和芯片内部热沉材料对芯片结温的影响,表明衬底粘结材料对LED的结温影响最大,并且封装材料热传导系数的变化率与封装结构的传热厚度成反比,与传热面积成正比。该研究为倒装焊LED封装结构和材料的设计提供了理论支持。     

倒装焊器件封装结构设计

倒装焊是今后高集成度半导体的主要发展方向之一。倒装焊器件封装结构主要由外壳、芯片、引脚(焊球、焊柱、针)、盖板(气密性封装)或散热片(非气密性封装)等组成。文章分别介绍外壳材料、倒装焊区、频率、气密性、功率等方面对倒装焊封装结构的影响。低温共烧陶瓷(LTCC)适合于高频、大面积的倒装焊芯片。大功率倒装焊散热结构主要跟功率、导热界面材料、散热材料及气密性等有关系。倒装焊器件气密性封装主要有平行缝焊或低温合金熔封工艺。     

功率型倒装结构LED系统热模拟及热阻分析

为了了解功率型倒装结构LED系统各部分热阻,找出LED系统散热关键,对功率型倒装结构LED系统进行了有限元热模拟,同时结合传热学基本原理分析了各部分的热阻.结果表明,LED系统中凸点,Si-submount管壳和散热体的自身热阻较小,而芯片、粘结剂、散热体-环境的热阻较大,占系统热阻主要部分.因此优化设计芯片与散热体,选取导热率高的粘结剂,可以有效降低LED系统的热阻,成为LED系统散热设计的关键.     

功率型倒装结构LED系统热模拟及热阻分析

为了了解功率型倒装结构LED系统各部分热阻,找出LED系统散热关键,对功率型倒装结构LED系统进行了有限元热模拟,同时结合传热学基本原理分析了各部分的热阻.结果表明,LED系统中凸点,Si-submount管壳和散热体的自身热阻较小,而芯片、粘结剂、散热体-环境的热阻较大,占系统热阻主要部分.因此优化设计芯片与散热体,选取导热率高的粘结剂,可以有效降低LED系统的热阻,成为LED系统散热设计的关键.     

功率型LED散热器的研究

分析了目前功率型LED发展存在的瓶颈问题,以及散热对LED器件正常工作的重要性.散热器的设计决定了功率型LED芯片产生的热量能否顺利传至工作环境,基于现有的文献和专利总结了大功率LED散热器的技术手段及其研究内容.从对流散热、辐射散热、热传导和相变散热等多个方面介绍了一些典型散热器在功率型LED散热中的应用,并提出了未来LED照明散热设计的方向.     

基于共晶焊接工艺和板上封装技术的大功率LED热特性分析

采用ANSYS有限元热分析软件,模拟了基于共晶焊接工艺和板上封装技术的大功率LED器件,并对比分析了COB封装器件与传统分立器件、共晶焊工艺与固晶胶粘接工艺的散热性能。结果表明:采用COB封装结构和共晶焊接工艺能获得更低热阻的LED灯具;芯片温度随芯片间距的减小而增大;固晶层厚度增大,芯片温度增大,而最大热应力减小。同时采用COB封装方式和共晶焊接工艺,并优化芯片间距和固晶层厚度,能有效改善大功率LED的热特性。     

LED电极结构优化设计与仿真计算

LED电极结构极大地影响着LED芯片的电流扩展能力,优化电极结构,能够缓解电流拥挤现象.讨论了正装LED结构和倒装LED结构的电流分布模型,并通过SimuLED软件研究了电极结构对LED电流扩展能力的影响.仿真结果表明:采用插指型电板结构极大提高了正装LED的电流扩展能力,电极下方插入电流阻挡层(CBL)后改变了芯片的电流分布状况,有利于光效的提升;而倒装LED的通孔式双层金属电极结构利用两层金属的互联作用,使n电极能够在整个芯片范围内均匀分布,进一步提高了电流扩展性能.     

功率型LED封装技术

随着LED芯片输入功率的提高,带来了大的发热量及要求高的出光效率,给LED的封装技术提出了更新更高的要求,使得功率型LED的封装技术成为近年来的研究热点.首先介绍了几种主要的功率型LED封装结构,对功率型LED封装过程的关键技术,如荧光粉涂覆技术、散热技术、取光技术、静电防护技术等及未来发展方向进行了描述.指出功率型LED封装应选用新的封装材料,采用新的工艺和新的封装理念来提高LED的性能和光效,延长使用寿命,以推进LED固体光源的应用.     

功率型LED封装关键技术与展望

二十一世纪,功率型LED作为一种高效节能环保的绿色固体光源将迅速发展并得到更广泛的应用。本文介绍了LED封装结构及封装过程中散热、荧光粉涂覆、光学设计和倒装芯片封装工艺等关键技术,并对功率型LED封装技术的发展进行了展望。     

大功率氮化镓基LED关键技术研究

对大功率氮化镓基LED的关键技术,尤其是大芯片LED的结构设计,p电极的选择与制备,提取效率的提高以及倒装焊技术做了重点的介绍与讨论.     

Thermal Study of High-Power Nitride-Based Flip-Chip Light-Emitting Diodes

This paper presents a chip-level thermal study of high-power nitride-based flip-chip (FC) light-emitting diodes (LEDs). In order to understand the thermal performance of the high-power FC LEDs thoroughly, a quantitative parametric analysis of the thermal dependence on the chip contact area, bump configuration, and bump defects was performed by finite-elementmodel (FEM) numerical simulation and thermal infrared (IR) microscopy testing, respectively. FEM numerical simulation results proved that the optimized bump configuration design was essential to get a uniform temperature distribution in the active layer and improve the thermal performance of the FC LED. IR microscopy testing results recognized that bump defects formed in the LED chip solder processing would lead to surface hot spots around the vicinity of these bump defects, particularly under high-current working conditions. In addition, a light-emitting dark zone was also observed in the optical field for FC LEDs with bump defects. In summary, optimized LED FC bump configuration design and good bonding quality in the chip bonding process are proved to be critical for improving the thermal performance and extending the operating longevity of high-power FC LEDs.      

高压倒装LED照明组件的热性能

高压(HX)倒装LED是一种新型的光源器件,在小尺寸、高功率密度发光光源领域有广泛的应用前景.设计了4种不同工作电压的高压倒装LED芯片,进行了流片验证,并对其进行了免封装芯片(PFC)结构的封装实验,在其基础上研制出一种基于高压倒装芯片的PFC-LED照明组件.建立了9V高压倒装LED芯片、PFC封装器件及照明组件的模型,利用流体力学分析软件进行了热学模拟和优化设计;利用T3Ster热阻测试分析仪进行了热阻测试,验证了设计的可行性.结果表明,基于9V高压倒装LED芯片的PFC封装器件的热阻约为0.342 K/W,远小于普通正装LED器件的热阻.实验结果为基于高压倒装LED芯片的封装及应用提供了热学设计依据.     

Analysis of thermal characteristics and mechanism of degradation of flip-chip high power LEDs

The purpose of this study is to investigate the thermal behavior at the die-attached interfaces of flip-chip GaN high-power light emitting diodes (LEDs) using a combination of theoretical and experimental analyses. The results indicate that contact thermal resistance increased dramatically at the die-attached interfaces with aging time and stress, degrading the luminous flux. The junction temperature and thermal uniformity of the flip-chip structure both strongly depend on the arrangement of gold bumps. Local hot spots effectively reduce light output under high electric and thermal stress, influencing the long-term performance of the LED device. The results were validated using finite element analysis and in experiments using an infrared and an emission microscope. A two-step thermal transient degradation mode was identified under various aging stresses. A simulation further optimized the bump configuration that was associated to yield a low junction temperature and high temperature uniformity of the LED chip. Accordingly, the results are helpful in enhancing the performance and reliability of high-power LEDs.     

LED封装的热控制优化设计

基于某型LED模块的实验结果,从热膨胀匹配、冷却技术的选择、发光效率、焊料及硅胶选择等方面对大功率LED的热控制问题进行了优化设计。实验结果表明,优化设计后的大功率LED的转换效率和光通量等指标都有了一定程度的改善。     

Thermal characteristics evaluation for board-level high performance flip-chip package equipped with vapor chamber as heat spreader

Thermal analysis was performed in this work to compare the thermal performance of a board-level high performance flip-chip ball grid array package equipped with solid Cu or vapor chamber (VC) as the heat spreader and Al-filler gel or In solder as the thermal interface material (TIM). The effect of different heat source sizes was also examined. Numerical results indicate that for the particular test vehicle under a power dissipation of 160 W, the thermal performance is remarkably enhanced by switching TIM from Al-filler gel to In solder while the enhancement by using VC instead of solid Cu heat spreader is only observable when In solder is incorporated. Moreover, the performance of VC gradually enhances then retards as the heat source size decreases. The retardation can be attributed to the more dominant role of die in heat dissipation when the heat source size gradually shrinks.     

Stress-strain curves of flip-chip solder balls based on finite-element modeling of thermal displacements measured by electronic speckle pattern interferometry

Electronic speckle pattern interferometry (ESPI) was applied to noncontact, real-time evaluation of thermal deformation in a flip-chip solder joint. To measure the deformation of such tiny components as the solder balls in the flip-chip, the spatial resolution of ESPI was increased to submicron scale by magnifying the areas studied. Experimental-computational procedures were developed to obtain stress-strain curves for solder balls in the flip-chip based on finite-element modeling (FEM) of in-plane ESPI thermal displacement data. The stress-strain curve obtained for the flip-chip solder was compared with those for bulk solder. The microstructure was also studied to clarify the stress-strain curve results.     

Effect of Metal Bond-Pad Configurations on the Solder Microstructure Development of Flip-Chip Solder Joints

Various microstructural zones were observed in the solidified solder of flip-chip solder joints with three metal bond-pad configurations (Cu/Sn/Cu, Ni/Sn/Cu, and Cu/Sn/Ni). The developed microstructures of the solidified flip-chip solder joints were strongly related to the associated metal bond pad. A hypoeutectic microstructure always developed near the Ni bond pad, and a eutectic or hypereutectic microstructure formed near the Cu pad. The effect of the metal bond pads on the solder microstructure alters the Cu solubility in the molten solder. The Cu content (solubility) in the molten Sn(Cu) solder eventually leads to the development of particular microstructures. In addition to the effect of the associated metal bond pads, the developed microstructure of the flip-chip solder joint depends on the configuration of the metal bond pads. A hypereutectic microstructure formed near the bottom Cu pad, and a eutectic microstructure formed near the top Cu pad. Directional cooling in the flip-chip solder joint during the solidification process causes the effects of the metal bond-pad configuration. Directional cooling causes the Cu content to vary in the liquid Sn(Cu) phase, resulting in the formation of distinct microstructural zones in the developed microstructure of the flip-chip solder joint.     

Fabrication and thermal analysis of flip-chip light-emitting diodes with different numbers of Au stub bumps

The thermal performance of flip-chip (FC) light-emitting diodes (LEDs) with different numbers of Au stub bumps has been investigated by using thermosonic bonder. The LEDs were mounted on the aluminium nitride (AlN) sub-mounts which have superior thermal conductivity (230 W/mK), and the high power Chip-on-Plate (COP) package was proposed to be used for our measurement. In order to understand the thermal performance of the high power FC-LEDs, the experimental measurement and finite-element model (FRM) numerical simulation have been used. It is found that the thermal performance of our 1 × 1 mm² FC-LEDs can only be improved when using at least 6 Au stub bumps as interconnected metals. Moreover, the surface temperature of FC-LEDs is significantly reduced while using 20 Au stub bumps.     

Effect of silver content on thermal fatigue life of Sn-xAg-0.5Cu flip-chip interconnects

The thermal fatigue properties of Sn-xAg-0.5Cu (x=1, 2, 3, and 4 in mass%) flip-chip interconnects were investigated to study the effect of silver content on thermal fatigue endurance. The solder joints with lower silver context (x=1 and 2) had a greater failure rate compared to those with higher silver content (x=3 and 4) in thermal fatigue testing. Cracks developed in the solders near the solder/chip interface for all joints tested. This crack propagation may be mainly governed by the nature of the solders themselves because the strain-concentrated area was similar for tested alloys independent of the silver content. From the microstructural observation, the fracture was a mixed mode, transgranular and intergranular, independent of the silver content. Higher silver content alloys (x=3 and 4) had finer Sn grains before thermal cycling according to the dispersion of the Ag₃Sn intermetallic compound, and even after the cycling, they suppressed microstructural coarsening, which degrades the fatigue resistance. The fatigue endurance of the solder joints was strongly correlated to the silver content, and solder joints with higher silver content had better fatigue resistance.     

Nitride-based flip-chip ITO LEDs

Nitride-based flip-chip indium-tin-oxide (ITO) light-emitting diodes (LEDs) were successfully fabricated. It was found that the forward voltage and the 20 mA output power of the flip-chip ITO LED were 3.32 V and 14.5 mW, respectively. Although the operation voltage of such a flip-chip ITO LED was slightly larger, it was found that its output power was much larger than those of conventional nonflip-chip LEDs. It was also found that flip-chip ITO LEDs were more reliable.