Effect of substrate on microstructure and mechanical properties of sol–gel prepared (K,Na)NbO3 thin films

Lead-free ferroelectric (K, Na)NbO₃ (KNN) thin films (～200 nm thickness) were prepared using a modified sol–gel method by mixing K and Na acetates with the Nb–tartarate complex, deposited by spin-coating method on Pt/Al₂O₃ and Pt/SiO₂/Si substrates and sintered at 650 °C. Pure perovskite phase of K_0.65Na_0.35NbO₃ in film on silicon were revealed, while film on alumina contained also small amount of secondary pyrochlore Na₂Nb₈O₂₁ phase. Homogenous microstructure of film on Si substrate was smoother with the lower roughness (～7.4 nm) and contained spherical (～50 nm) particles. The mechanical properties of films were characterized by nanoindentation. The modulus and hardness of KNN films were calculated from their composite values of film/substrate systems using discontinuous and modified Bhattacharya model, respectively. The KNN film modulus was higher on alumina substrate (91 GPa) in comparison with silicon substrate (71 GPa) and values of film hardness were the same (4.5 GPa) on both substrates.     

Structural, morphological and optical properties of TiO2 films prepared using aqueous sol–gel methods

The influence of the preparation conditions on the structural, morphological and optical properties of TiO₂ thin films deposited on silicon substrate (Si), indium tin oxide coated glass (ITO) and alkali-free borosilicate glass (AFG), respectively is studied in this work. The X-ray diffraction analysis revealed that all TiO₂ samples had a polycrystalline structure. The TiO₂ films coated on Si showed a mixed phase of anatase and rutile while in the case of those on ITO and AFG only the pure anatase phase was observed. The crystallite size within the TiO₂ thin films varied with the calcinations temperature, solvent lateral chain and catalyst type. The optical transmittance, band gap, reflective index and porosity were strongly affected by the annealing temperature, substrate nature and solvent.     

Effect of annealing temperature on electrical and nano-structural properties of sol–gel derived ZnO thin films

Zinc oxide (ZnO) thin films have been prepared on silicon substrates by sol–gel spin coating technique with spinning speed of 3,000 rpm. The films were annealed at different temperatures from 200 to 500 °C and found that ZnO films exhibit different nanostructures at different annealing temperatures. The X-ray diffraction (XRD) results showed that the ZnO films convert from amorphous to polycrystalline phase after annealing at 400 °C. The metal oxide semiconductor (MOS) capacitors were fabricated using ZnO films deposited on pre-cleaned silicon (100) substrates and electrical properties such as current versus voltage (I–V) and capacitance versus voltage (C–V) characteristics were studied. The electrical resistivity decreased with increasing annealing temperature. The oxide capacitance was measured at different annealing temperatures and different signal frequencies. The dielectric constant and the loss factor (tanδ) were increased with increase of annealing temperature.     

Photoconductive properties of TiO2 films prepared by the sol–gel method and its application

The Photoconductive characteristics of TiO2 films prepared by the sol-gel method, and the photovoltaic characteristics fabricated with the resulting TiO2 film and phthalocyanine nickel (NiPc) are investigated. For a TiO2 film with hydroxypropyl cellulose (Hpc) heat treated at 500°C for 10 min, the relative sensitivity is about ten times higher than that without Hpc. A space-charge-limited current is observed in the dark current–voltage characteristic of the TiO2 film with Hpc. It is found that the TiO2 film with Hpc has a photosensitizing effect. The photovoltaic characteristics of TiO2(Hpc)/NiPc are as follows: the short-circuit current density, Jsc is 5.6×10-7 A cm-2, the open-circuit voltage, Voc is 0.24 V, the fill factor (F.F) is 0.64 and the power conversion efficiency, is 0.73. Furthermore, the carrier transport mechanisms of the TiO2(Hpc)/NiPc photovoltaic cell are discussed.     

Effect of stabilizer on optical and structural properties of MgO thin films prepared by sol–gel method

The effects of monoethanolamine (MEA) and acetylacetone (ACAC) addition as stabilizer on the crystallization behaviour, morphology and optical properties of magnesium oxide were investigated using thermogravimetry (TG/DTG), X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-Visible, photoluminescence (PL) and Fourier transform infrared (FTIR) spectroscopy. Stabilizer addition reduces transparency of the films. MgO films prepared at 500 °C showed weak orientation of (200). However, the films prepared by addition of stabilizer are amorphous. MgO powders were prepared for exhibiting the structural properties. The patterns of MgO powders showed a preferred orientation of (200). The addition of stabilizer causes a reduction in grain size. SEM micrographs show that a homogenous and crack-free film can be prepared at 500 °C and addition of stabilizer causes an increase in packing density.     

Effect of Zn doping on structure and ferroelectric properties of PST thin films prepared by sol–gel method

(Pb _y Sr_1−y )Zn _x Ti_1−x O_3−x thin films were prepared on ITO/glass substrate by sol–gel process using dip-coating method. The phase structure, morphology and ferroelectric property of the thin film were studied. All the thin films show the typical perovskite phase structure. Both the crystallinity and c/a ratio of the perovskite phase increases initially and then decreases gradually with doping Zn in the thin film. Ferroelectric properties of the Zn-doped PST thin films, including ferroelectric hysteresis-loop, remnant polarization and coercive force, decrease gradually with increasing Zn. And the effect of Zn on ferroelectric properties is more obvious in PST thin film with high content of Pb than that with low Pb although the high lead thin film exhibits high intrinsic ferroelectric properties.     

Effect of sulfur and copper amounts in sol–gel precursor solution on the growth, crystal properties, and optical properties of Cu2ZnSnS4 films

Cu₂ZnSnS₄ (CZTS) thin films were deposited by sol–gel spin coating using precursor solutions prepared with copper acetate, zinc acetate, tin chloride, and thiourea in methanol and ethylenediamine followed by sulfurization. Sol–gel precursor solutions were prepared with different amounts of sulfur and copper, and their effects on film growth, crystal properties, and optical properties of CZTS films were investigated. CZTS film thickness increased with the amount of metal salt in the precursor solution. This is attributed to an increase in solution viscosity and a decrease in the solution density/viscosity ratio. All CZTS thin films exhibited kesterite structures with absorption coefficients larger than 10⁴ cm^?1 in the visible region. Band gap energy increased with increasing amounts of sulfur and decreasing amounts of copper. The blue shift of the band gap is attributed to changes in the degree of p–d hybridization related to Cu d- and S p-levels. The role of sulfur and copper on Hall mobility and carrier concentration was investigated. By optimizing the metal salt ratio in the precursor, CZTS film with a resistivity of 5.3 × 10^?2 Ωcm were prepared.     

Effect of the Brij 30 porogen on the properties of sol–gel derived thin polymethylsilsesquioxane films

Thin polymethylsilsesquioxane films with Brij 30 porogen concentrations in the range ω_surf = 15.5–52.5 wt % have been produced by a sol–gel process. Their dielectric permittivity, refractive index, relative porosity, and shrinkage have been measured as functions of heat treatment temperature and porogen concentration.     

Effect of atmosphere on the electrical properties of TiO2–SnO2 varistor systems

This work illustrates the advancement of research on TiO₂-based electroceramics. In this work will be presented that the addition of different dopants, as well as thermal treatments at oxidizing and inert atmosphere, influences of the densification, the mean grain size and the electrical properties of the TiO₂-based varistor ceramics. Dopants like Ta₂O₅, Nb₂O₅, and Cr₂O₃ have an especial role in the barrier formation at the grain boundary in the TiO₂ varistors, increasing the nonlinear coefficient and decreasing the breakdown electric field. The influence of Cr_Ti is to increase the O and O₂ adsorption at the grain boundary interface and to promote a decrease in the conductivity by donating electrons to O₂ adsorbed at the grain boundary. In this paper, TiO₂ and (Sn,Ti)O₂-based studies of polycrystalline ceramics, which show a non-linear I–V electrical response typical of low voltage varistor systems are also presented. All these systems are potentially promising for varistor applications.     

Effect of annealing temperature on optical and electrical properties of ZrO2–SnO2 nanocomposite thin films

ZrO₂–SnO₂ nanocomposite thin films were deposited onto quartz substrate by sol–gel dip-coating technique. Films were annealed at 500, 800 and 1,200 °C respectively. X-ray diffraction pattern showed a mixture of three phases: tetragonal ZrO₂ and SnO₂ and orthorhombic ZrSnO₄. ZrSnO₄ phase and grain size increased with annealing temperature. Fourier transform infra-red spectroscopy spectra indicated the reduction of –OH groups and increase in ZrO₂–SnO₂, by increasing the treatment temperature. Scanning electron microscopy observations showed nucleation and particle growth on the films. The electrical conductivity decreased with increase in annealing temperature. An average transmittance greater than 80 % (in UV–visible region) was observed for all the films. The optical constants of the films were calculated. A decrease in optical band gap from 4.79 to 4.59 eV was observed with increase in annealing temperature. Photoluminescence (PL) spectra revealed an emission peak at 424 nm which indicates the presence of oxygen vacancy in ZrSnO₄. PL spectra of the films exhibited an increase in the emission intensity with increase in temperature which substantiates enhancement of ZrSnO₄ phase and reduction in the non-radiative defects in the films. The nanocomposite modifies the structure of the individual metal oxides, accompanied by the crystallite size change and makes it ideal for gas sensor and optical applications.     

Effect of water content in sol on optical properties of hybrid sol–gel derived TiO2/SiO2/ormosil film

Sol–gel derived TiO₂/SiO₂/ormosil hybrid planar waveguides have been deposited on soda-lime glass slides and silicon substrates, films were heat treated at 150 °C for 2 h or dried at room temperature. Different amounts of water were added to sols to study their impacts on microstructures and optical properties of films. The samples were characterized by m-line spectroscopy, Fourier transform infrared spectroscopy (FT-IR), UV/VIS/NIR spectrophotometer (UV–vis), atomic force microscopy (AFM), thermal analysis instrument and scattering-detection method. The refractive index was found to have the largest value at the molar ratio H₂O/OR = 1 in sol (OR means OCH₃, OC₂H₅ and OC₄H₉ in the sol), whereas the thickest film appears at H₂O/OR = 1/2. The rms surface roughness of all the films is lower than 1.1 nm, and increases with the increase of water content in sol. Higher water content leads to higher attenuation of film.     

Effect of monovalent dopant ionic radius and concentration on the growth orientation and optical properties of the sol–gel-derived ZnO thin films

Journal of Materials Science: Materials in Electronics - Pure and doped ZnO thin films with different monovalent elements (Li+, Na+, Ag+ and Cs+) are deposited onto glass substrates using a...     

Effect of solution concentration on the structural, optical and conductive properties of ZnO thin films prepared by sol–gel method

ZnO thin films with different solution concentrations (0.1–0.9 mol/L) were prepared by a simple sol–gel dip-coating technique. X-ray diffraction, ultraviolet–visible spectroscopy, Hall effect measurements and photoluminescence (PL) spectroscopy were employed to investigate the effect of solution concentration on the structural,optical and electrical conductive properties of the ZnO thin films. The results showed that the ZnO thin films preferentially oriented along the (002) direction at higher solution concentration. The careful study of the optical and electrical conductive properties showed that the resistivity decreased monotonously, while the transmittance increased first and then decreased when solution concentrations changed from 0.1 to 0.9 mol/L. Photoluminescence spectra indicated that the defect-related blue emission was increased with the enhancement of solution concentration. The mechanism of the blue emission, and the reasons why high solution concentration was favorable for forming high c-axis oriented ZnO thin films and obtaining low resistivity were also discussed in detail.     

Nanocrystalline sol–gel TiO2–SnO2 coatings: Preparation,characterization and photo-catalytic performance

In this study, preparation of SnO₂ (0–30 mol% SnO₂)–TiO₂ dip-coated thin films on glazed porcelain substrates via sol–gel process has been investigated. The effects of SnO₂ on the structural, optical, and photo-catalytic properties of applied thin films have been studied by X-ray diffraction, Raman spectroscopy, and scanning electron microscopy. Surface topography and surface chemical state of thin films were examined by atomic force microscopy and X-ray photoelectron spectroscopy. XRD patterns showed an increase in peak intensities of the rutile crystalline phase by increasing the SnO₂ content. The prepared Sn doped TiO₂ photo-catalyst films showed optical absorption in the visible light area exhibited excellent photo-catalytic ability for the degradation of methylene blue under visible light irradiation. Best photo-catalytic activity of Sn doped TiO₂ thin films was measured in the TiO₂–15 mol% SnO₂ sample by the Sn⁴⁺ dopants presented substitution Ti⁴⁺ into the lattice of TiO₂ increasing the surface oxygen vacancies and the surface hydroxyl groups.     

Influence of Fe dopant concentration and annealing temperature on the structural and optical properties of ZnO thin films deposited by sol–gel method

Nanostructured Fe doped ZnO thin films were deposited onto glass substrates by sol–gel spin coating method. Influence of Fe doping concentration and annealing temperature on the structural, compositional, morphological and optical properties were investigated using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), UV–Vis spectroscopy and photoluminescence (PL) measurements. XRD analysis showed that all the films prepared in this work possessed a hexagonal wurtzite structure and were preferentially oriented along the c-axis. Pure ZnO thin films possessed extensive strain, whereas Fe doped films possessed compressive strain. In the doped films, least value of stress and strain was observed in the 0.5 at.% Fe doped thin film, annealed at 873 K. Average crystallite size was not significantly affected by Fe doping, but it increased from 15.57 to 17.79 nm with increase in annealing temperature from 673 to 873 K. Fe ions are present in +3 oxidation state as revealed by XPS analysis of the 0.5 at.% Fe doped film. Surface morphology is greatly affected by changes in Fe doping concentration and annealing temperature which is evident in the SEM images. The increase in optical band gap from 3.21 to 3.25 eV, with increase in dopant concentration was attributed to Moss–Burstein shift. But increase in annealing temperature from 673 to 873 K caused a decrease in band gap from 3.22 to 3.20 eV. PL spectra showed emissions due to excitonic combinations in the UV region and defect related emissions in the visible region in all the investigated films.     

Effect of heat treatment on structural and magnetic properties of Li–Ni ferrite prepared via sol–gel auto-combustion method

Journal of Materials Science: Materials in Electronics - Nanocrystalline Li0.35Ni0.3Fe2.35O4 ferrites were prepared at different annealing temperatures by sol–gel auto-combustion method. The...