基于AlN轮廓模式矩形盘谐振器的研究

介绍了一种微型化体声波谐振器的理论模型和实作结果,采用微电子和微机械加工技术,实现了一种上、下电极覆盖压电AlN的"三明治"空气腔悬梁结构。该谐振器具有微型化,高品质因数,低成本的特点,实作的谐振器频率约20MHz,品质因数为800,机电耦合系数约0.5%。     

一种新型介质谐振器带通滤波器

本文阐述一种能与微波集成电路结合使用的新型介质谐振器带通滤波器。这种滤波器是目前能用于微波集成电路的性能最佳的一种窄带滤波器。本文对这种滤波器作了理论分析;并导出了有关滤波器设计的主要公式;给出了一至四谐振器带通滤波器的实测性能。例如:一个相对带宽为 0.2％的 5cm三谐振器滤波器,其带内插损为 0.8dB左右,带外衰减大于50dB,30dB与 3dB的带宽比约为 3.3。     

基模抑制的三次泛音石英谐振器

基模抑制的石英谐振器是能陷理论的新应用，是一种新型的石英谐振器。本文简要论述了低次谐波抑制的概念及原理，给出了ＡＴ切基模抑制的三次泛音石英谐振器试验数据，并与一般的泛音晶体作了比较。试验数据表明，６７ＭＨｚ三次泛音的等效电阻约为３５Ω，而基频的等效电阻约为２８０Ω，是三次泛音等效电阻的８倍，从而使基模得到了抑制。     

微小型恒温晶体振荡器

本文介绍体积为20×12×5(mm)和16×16×5.5(mm)两种结构的微小型恒温晶体振荡器的设计制造、工艺以及为微型化而对晶体谐振器进行专门的设计安装。详细介绍了对主振电路、射随级和加热及控温电路采用混合集成和表面安装技术而实现了微型化。对已提供给航空、航天电子工程使用的,频率从100kHz到80MHz范围部分产品进行的全面技术指标测试结果进行了分析。还对多信号输出晶体振荡器的工作原理作了简单介绍。     

一种应用于WLAN双频的T型介质谐振器天线

设计一种满足WLAN双频的T型介质谐振器天线。通过对介质谐振器两侧进行切割形成"T"型产生双频辐射,再由电磁仿真软件建立模型并对其优化,得到最佳的天线设计参数。仿真结果表明该天线实现了5.2 GHz和5.8 GHz的双频带工作且均有很高的增益。该天线结构简单,仅在传统矩形介质谐振器天线的基础上对介质谐振器进行了"T"型处理。     

低频段腔体滤波器的小型化设计

介绍一种微波低频段腔体滤波器的设计方法。首先给出多种加载腔体的结构形式进行分析比较,并通过2个设计实例和测试结果,证明采用双同轴腔体加载形式,可以实现结构的微型化。该结构与普通的加载型腔体滤波器相比,谐振器长度可以极大缩短,腔体也能保持比较高的Q值。     

基于兰姆波压电谐振器的高频低相噪MEMS振荡器仿真研究

发达的现代通信设备对时钟源器件提出了更高的要求,在保障频率信号稳定的同时还需要器件具备可集成、微型化等特点,微机电系统(MEMS)振荡器因其具备这些优势,已逐渐替代传统振荡器,成为电子设备中信号源的常用元器件。该文设计了一种MEMS振荡器并对其进行仿真测试,该振荡器的核心选频器件由Lamb波压电谐振器组成,在应用于振荡电路前,对设计的MEMS谐振器进行了仿真测试,并提出两种优化其寄生模态的方法,所得谐振器的品质因数(Q)为1 357.5,串联谐振频率为70.384 MHz。将优化后谐振器应用于振荡电路后,对振荡器输出信号和相位噪声进行测试,结果表明,MEMS振荡器的输出载波频率为70.58 MHz,相位噪声为-64.299 dBc/Hz@1 Hz及-144.209 dBc/Hz@10 kHz。     

基于硅基微环谐振器的折射率传感研究综述

片上折射率传感在安全检查、环境监测、健康诊断和食品监督等领域有着广阔的应用前景,基于硅基微环谐振器的折射率传感器具有微型化、集成化等优点,已成为当前研究的热点。文章首先对硅基微环谐振器的折射率传感探测原理进行了介绍,然后依据探测原理分类梳理了国内外硅基微环折射率传感的最新研究进展,并分析总结了不同传感探测原理的优缺点,最后讨论了现阶段硅基微环谐振器在折射率传感中存在的问题和未来的发展方向。     

铌酸锂声表面波谐振滤波器

本文叙述了SAW单节谐振滤波器——双端对谐振器的设计.介绍了YZ-LiNbO_3基片上试验的SAW谐振器响应,并对结果作了分析.同时给出了用所研究的一种谐振器简单级联试作的多级耦合谐振滤波器的性能.     

氮化铝Lamb波谐振器的能量损耗分析研究

本文介绍了工作频率为400 MHz和2 GHz氮化铝Lamb波谐振器的结构设计、微纳制造及测试表征，研究了锚点损耗和声子间相互作用损耗对Lamb波谐振器品质因数（Q值）的影响，并分析了不同工作频率的Lamb波谐振器的主要能量损耗来源.研究发现：对于低频谐振器，锚点损耗为其主要能量损耗来源，因此减小支撑轴宽度可减少通过支撑轴泄漏至衬底的能量，进而提高Q值；对于高频谐振器，声子间相互作用损耗为其主要能量损耗来源，因此相比于金（Au），采用铝（Al）作为叉指电极（IDT）材料的谐振器具有更高Q值.针对Lamb波谐振器的结构特点，设计了一套基于七步光刻工艺的微纳制程，成功制备了具有微型化释放腔体的Lamb波谐振器，并具备优异的性能.测试结果表明，工作频率为400 MHz和2 GHz的Al-IDT谐振器的串联品质因数（Qs）分别达到2 590和1 192.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.