制备WO3电致变色薄膜的低压反应离子镀工艺研究

在电子束蒸发镀膜的基础上,引入低压反应离子镀工艺制备WO3电致变色薄膜,研究不同氧分压对WO3薄膜电致变色特性的影响,实验结果表明制备时选择工作气体氩气分压为2×10-2 Pa,氧分压为4×10-2 Pa时,薄膜具有最好的电致变色特性和最大的变色范围.进而采用低压反应离子镀工艺成功地实现在塑料基板上制备WO3薄膜,并对其电致变色特性进行了研究.同时对比了采用普通电子束蒸发镀膜制备的WO3薄膜的电致变色特性.     

射频溅射制备氧化镍电致变色薄膜的研究

采用射频反应磁控溅射工艺，以纯镍靶为靶材，在SnO2玻璃上制备电致变色NiOx薄膜。通过对薄膜X射线衍射（XRD）、X光电子能谱（XPS）、扫描隧道显微镜（STM）、循环伏安曲线及可见光透过率的测定，探讨了NiOx薄膜的电致变色性能和微观结构之间的关系，研究了热处理过程中的结构变化和表面形貌。测试表明该氧化镍薄膜具有良好的电致变色性能和阳极着色效应，以及较高的使用寿命。     

溶胶凝胶旋涂法制备NiO薄膜及其电致变色性能

本文利用sol-gel旋涂法在ITO玻璃衬底上成功制备了氧化镍(Ni O)薄膜。薄膜在550nm处的透过率为83.9%,直接禁带宽度为3.65 eV。XRD分析结果表明Ni O薄膜为立方晶相,沿(111),(200),(220)晶面生长,垂直于晶面(200)方向的晶粒直径尺寸大约为6.82 nm。循环伏安实验测试表明,Ni O薄膜在电化学反应过程中Ni2+不只经历了一次氧化反应,而是被氧化成更高价态的Ni3+,Ni4+价态,并通过计算得出薄膜在最强的阳极/阴极峰处的扩散系数为13.4×10-12cm2/s和2.29×10-12cm2/s,并且薄膜在550 nm处致色态与褪色态的透过率之差为36.5%,T/T为1.8。     

NiO/PB复合电致变色薄膜的制备及其性能研

采用水热法制备了垂直生长的氧化镍(NiO)纳米片薄膜, 并利用电沉积法将普鲁士蓝(PB)负载到NiO纳米片薄膜上, 制备了新型的NiO/PB复合电致变色薄膜。利用X射线衍射仪(XRD)、场发射扫描电镜(SEM)对样品的晶型以及微观形貌进行了表征, 采用紫外-可见光光度计以及电化学工作站对NiO/PB复合薄膜的电化学和电致变色性能进行了研究和表征。结果表明: NiO/PB复合电致变色薄膜具有多孔结构和较大的比表面积, 可以增大电解质与电极材料的接触面积。PB成功负载到NiO薄膜表面, 使NiO/PB复合薄膜表现出较大的电流密度。相比于单层NiO薄膜, NiO/PB复合薄膜表现出更好的电致变色性能, 其光调制范围可以达到46%, 着色效率为141 cm²/C, 并且其着色时间可以缩短到5 s, 褪色时间为6 s。     

溅射氧化镍薄膜的电致变色特性

本文采用直流反应溅射获得了具有良好电色特性的ＮｉＯｘ薄膜。薄膜的电色特性强烈地受到制备条件的影响，在低溅射电压和高溅射压力下制得的薄膜电色效果最佳。典型的ＮｉＯｘ电色薄膜厚２００ｎｍ，可见光透过率变化范围在６３２．８ｎｍ处可达４８％，着色及退色响应时间为５～１０ｓ。Ｘ射线衍射表明薄膜呈非晶态。ＸＰＳ显示Ｎｉ￣（３＋）在电色过程中起着色心作用。红外反射谱证实电色过程有ＯＨ基的参与。     

电致变色材料的变色机理及其研究进展

电致变色材料是目前公认的最有发展前途的智能材料之一。简要介绍了无机电致变色材料（如WO3、MoO3、NiO、IrOx等）和有机电致变色材料（如紫罗精、稀土酞花菁、聚苯胺等）这两种不同类型的变色材料及其研究现状，阐述了电致变色现象及其变色机理，并展望了其应用前景和发展方向。     

掺杂氧化钨薄膜的电致变色特性

掺杂氧化钼对氧化钨薄膜的电致变色特性有一定的影响,本文介绍了用电子束蒸发制备不同MoO3掺杂比例的氧化钨膜,对其着色态与漂白态的光学特性以及循环伏安特性进行了实验研究,通过对循环伏安曲线的分析,对杂氧化钨薄膜电致变色的机理进行了讨论。     

离子液体电沉积制备Cu掺杂NiO电致变色薄膜及其性能EI北大核心

NiO是一种常见的电致变色材料,元素掺杂改性是改善NiO薄膜电致变色性能的重要方法。以离子液体为介质,采用电沉积法制备Cu掺杂NiO薄膜,并研究Cu元素掺杂对NiO薄膜电致变色性能的影响。结果表明:Cu掺杂NiO薄膜的电致变色性能相较于纯NiO薄膜有明显提升。Cu掺杂含量为6%(原子分数,下同)时,薄膜光调制范围最大,为54.7%,着色效率最高,为61.54 cm^(2)/C,Cu掺杂含量为12%时,薄膜的着褪色响应时间最短,分别达到2.7 s与2.6 s。薄膜的物相结构为面心立方晶相Ni_(1-x)Cu_(x)O,由纳米粒子堆积而成,表面存在大量利于离子扩散的孔隙。     

电致变色材料的变色机理及其研究进展

电致变色材料是目前公认的最有发展前途的智能材料之一.简要介绍了无机电致变色材料(如WO3、MoO3、NiO、IrOx等)和有机电致变色材料(如紫罗精、稀土酞花菁、聚苯胺等)这两种不同类型的变色材料及其研究现状,阐述了电致变色现象及其变色机理,并展望了其应用前景和发展方向.     

Optical properties of NiO thin films fabricated by electron beam evaporation

Nickel oxide (NiO) thin films were deposited onto quartz substrates by the electron beam deposition technique, and obtained high crystal quality after annealing at 1173 K. The structural and microstructural properties of the films were studied by X-ray diffraction (XRD) and atomic force microscope (AFM), respectively. We focus on the optical characterization of the films, indicating the enhancement of the crystal quality, which was confirmed by the photoluminescence and Raman spectrum. Furthermore, PL studies exhibited room temperature emission at 377 nm, and also shown high ultraviolet/visible rejection ratio (>100).     

Li和Ti共掺NiO薄膜的溶胶-凝胶法制备及其介电性能

采用溶胶-凝胶法在Pt/Ti/SiO2(1mm)/Si基板上制备了Li和Ti共掺NiO基新型无铅介电薄膜材料,研究了薄膜的形貌、结构、介电性能.结果表明,热分解温度(300～500℃)对薄膜结构影响不明显,经600～800℃退火后的薄膜由NiO与Li-Ni-O复合氧化伆组成;经300℃热分解处理、650℃退火后的薄膜,其表面均匀致密,膜厚约300nm,室温下100Hz时的介电常数为767,当频率高于3000Hz后,介电常数随频率的增加趋于减小.     

Effect of different atmospheres on the electrical stabilization of NiO films

Sputtered nickel oxide (NiO) films have a wide range of applications including their use in transparent conductive anodes for organic light-emitting diodes (OLEDs) where stable electrical properties are essential. Unfortunately, NiO films show electrical aging phenomenon in air. In the present experiments, the phenomenon of aging was investigated in different atmospheres including H₂, CO, O₂, CO₂, N₂, and Ar together with varying the humidity. It was found that NiO films were relatively stable in Ar but very unstable in H₂, CO and humid argon atmospheres. The aging rate increased rapidly as the humidity was increased from 2 to 20 relative humidity (RH) and became constant from 20 to 40 RH.     

Influences of process parameters on texture and microstructure of NiO films

The experimental result shows that the preferred orientations of NiO thin films are closely related to the working pressure of argon. All of NiO(111), NiO(200), and NiO(220) diffraction peaks are observed in the XRD patterns and exhibited random orientation of NiO film when the film is deposited in low Ar pressure of 0.67 Pa. As the Ar pressure is increased to 2.67 Pa, only the NiO(200) peak appears and shows (200)-textured NiO films. However, the lattice parameter of NiO film deposited in high Ar pressure of 2.67 Pa is 0.426 nm, which is much larger than that of the NiO bulk (0.417 nm). The lattice parameter can be reduced by post-annealing the film because the interstitial Ar atoms are released from the NiO lattice, decreasing continuously from 0.423 to 0.417 nm as the NiO films are annealed by rapid thermal annealing (RTA) from 300 to 600 °C.     

Studies of influence of structural properties and thickness of NiO thin films on formaldehyde detection

The aim of the present work is to test the performance of nickel oxide (NiO) thin films to low concentrations of formaldehyde (HCHO). NiO thin films were deposited on alumina substrates by RF reactive magnetron sputtering in a mixed atmosphere of argon and oxygen. A Pt heating resistor was deposited on the reverse side for an accurate control of the operating temperature. Samples were annealed in synthetic air for 4 h at 700 °C in order to stabilise their microstructure. Two different thicknesses (150 and 300 nm) were deposited in order to study the influence of this parameter on both the microstructure and sensor response. Both XRD analysis and FEG-SEM images show a smaller grain size for the 150 nm-thick samples. The best operating temperature was established at 340 and 300 °C for 150 and 300 nm-thick samples respectively. A higher sensitivity was obtained for the samples of lower thickness for a set of HCHO concentrations ranging from 5 to 20 ppm. Moreover, the repeatability of the experiments was tested for the most sensitive samples.     

Preparation of diamond-like carbon thin films by shielded arc ion plating

Abstracts are not published in this journal This revised version was published online in November 2006 with corrections to the Cover Date.     

Synthesis and properties of CeN thin films deposited by arc ion plating

Cerium nitride films were deposited by ion plating in an electron-beam sustained Ce arc discharge in a nitrogen atmosphere. The crystal structure was strongly affected by the arc discharge current and the substrate temperature. The lattice spacing of CeN film is 0.5020 nm with a density of 7.82 g cm^–3. This film showed a paramagnetic property at 10 K in a magnetic field of 20 kOe. The Knoop hardness for CeN film is over 1600. The electrical resistivity was 4.6 × 10^–4 cm with p-type conductivity. The carrier concentration of the CeN film increased after exposure to the air, which suggested that the valence of Ce in CeN is probably 4+.     

Synthesis of aluminum nitride thin films by filtered arc ion plating deposition

Thin films of aluminum nitride (AlN) were deposited on stainless steel and glass substrates by a modified deposition technique, filtered arc ion plating, at an enhanced deposition rate. X-ray diffraction spectra confirmed the exclusive presence of AlN hexagonal wurtzite phase. Under a mixed gas (Ar + N₂) pressure of 0.90 Pa and a bias voltage of − 400 V, the deposited films exhibited a fairly low surface roughness of 2.23 nm. The thin films were proved higher than 75% transparent in the visible spectral region. The bonding strength between the film and substrate was verified higher than 20 N. Thus high performance of such AlN thin films can be expected in applications.     

Electrochemical performances of NiO/Ni2N nanocomposite thin film as anode material for lithium ion batteries

Despite the high specific capacities, the practical application of transition metal oxides as the lithium ion battery (LIB) anode is hindered by their low cycling stability, severe polarization, low initial coulombic efficiency, etc. Here, we report the synthesis of the NiO/Ni₂N nanocomposite thin film by reactive magnetron sputtering with a Ni metal target in an atmosphere of 1 vol.% O₂ and 99 vol.% N₂. The existence of homogeneously dispersed nano Ni₂N phase not only improves charge transfer kinetics, but also contributes to the one-off formation of a stable solid electrolyte interphase (SEI). In comparison with the NiO electrode, the NiO/Ni₂N electrode exhibits significantly enhanced cycling stability with retention rate of 98.8% (85.6% for the NiO electrode) after 50 cycles, initial coulombic efficiency of 76.6% (65.0% for the NiO electrode) and rate capability with 515.3 mA·h·g⁻¹ (340.1 mA·h·g⁻¹ for the NiO electrode) at 1.6 A·g⁻¹.     

Preparation of Zr-Si thin films by a simultaneous deposition and reaction process using pulsed ion beams

Thin films of Zr were deposited on Si single crystal substrates by a simultaneous deposition and reaction (SDR) process using pulsed ion beams. The thin films were characterized by X-ray diffraction, selected area electron diffraction, scanning electron microscopy and transmission electron microscopy. One of the thin films with a wavy surface contained not only Zr grains but also polycrystalline ZrSi₂ and Si grains. From the results, the mechanism of the SDR process was explained as follows. First, Zr plasma, which had been formed from the ion-beam irradiated Zr target, was applied on a single crystal Si substrate to fuse a part of the single crystal Si substrate. Then, the fused Si layer enhanced the reaction with deposited Zr atoms. The present investigation implied a possibility of formation of thick reaction layers between thin films and substrates to improve the adhesion and the electrical properties.