Effect of oxidation and annealing temperature on optical and structural properties of SnO2

Tin oxide thin films were deposited on glass substrate with 100 nm thickness of Sn, which was coated by magnetron sputtering followed by thermal oxidation at different temperatures. The effect of oxidation temperature on the optical and structural properties of SnO₂ films were investigated. Higher transmittance, lower absorption and lesser structural defects were obtained at higher temperatures. Optical bandgap increases with temperature, while the Urbach energy showed reduction. The X-ray diffraction studies showed that at lower temperatures (300, 350 °C), a combined phase of SnO and SnO₂ was obtained, while at higher temperatures (400, 450 °C), a nearly polycrystalline SnO₂ film with preferred orientation of (101) was produced. Annealing of the samples at 500–650 °C caused the transmittance and optical bandgap increased, while the absorption decreased. Reduction of the Urbach energy after annealing could be attributed to the reduction of the degree of thermal disorder. AFM studies showed that although the thin films were annealed under similar condition, their roughness was not similar because of different oxidation temperatures, which means that initial oxidation temperature played an important role on surface uniformity of SnO₂ thin films.     

H2S sensing property of porous SnO2 sputtered films coated with various doping films

Pure SnO₂ films and Ag-, Cu-, Pt-, and Pd-doped SnO₂ films were investigated for H₂S sensing properties. SnO₂ films were deposited by DC magnetron sputtering at various substrate temperatures and discharge gas pressures. As the discharge gas pressure increased and the substrate temperature decreased, the film became porous. Doping with Cu or Ag film improved the sensitivity, and the highest sensitivity was obtained in the porous SnO₂ film coated with an Ag film 16 nm thick. According to the X-ray diffraction (XRD) pattern, Ag deposited on SnO₂ film transformed to Ag₂S upon exposure to H₂S. When the Ag-doped film sensor was operated at a low temperature, the sensitivity was extremely high, but the recovery was insufficient. By increasing the operation temperature, the recovery was improved but the sensitivity decreased.     

Structural,morphological, optical and gas sensing properties of pure and Ce doped SnO<Subscript>2</Subscript> thin films prepared by jet nebulizer spray pyrolysis (JNSP) technique

Pure and cerium (Ce) doped tin oxide (SnO₂) thin films are prepared on glass substrates by jet nebulizer spray pyrolysis technique at 450 °C. The synthesized films are characterized by X-ray diffraction (XRD), scanning electron microscopy, energy dispersive analysis X-ray, ultra violet visible spectrometer (UV–Vis) and stylus profilometer. Crystalline structure, crystallite size, lattice parameters, texture coefficient and stacking fault of the SnO₂ thin films have been determined using X-ray diffractometer. The XRD results indicate that the films are grown with (110) plane preferred orientation. The surface morphology, elemental analysis and film thickness of the SnO₂ films are analyzed and discussed. Optical band gap energy are calculated with transmittance data obtained from UV–Visible spectra. Optical characterization reveals that the band gap energy is found decreased from 3.49 to 2.68 eV. Pure and Ce doped SnO₂ thin film gas sensors are fabricated and their gas sensing properties are tested for various gases maintained at different temperature between 150 and 250 °C. The 10 wt% Ce doped SnO₂ sensor shows good selectivity towards ethanol (at operating temperature 250 °C). The influence of Ce concentration and operating temperature on the sensor performance is discussed. The better sensing ability for ethanol is observed compared with methanol, acetone, ammonia, and 2-methoxy ethanol gases.     

Structural and optical characterization of c-axis textured BaTiO<Subscript>3</Subscript> thin films on MgO fabricated by RF magnetron sputtering

In this paper, BaTiO₃ thin films were prepared by RF magnetron sputtering on MgO substrates and their properties such as the crystal structure and optical waveguide properties were investigated. The optimum deposition parameters, such as substrate temperature, deposition pressure, gas flow ratio, the RF power and the after annealing temperature, were obtained in order to get the best BaTiO₃ film quality. The XRD results show that highly c-axis textured BaTiO₃ thin films were successfully grown on MgO substrate. Films obtained under the optimum deposition parameters, substrate temperature of 650°C, RF power of 50 W, deposition pressure 18 mTorr and gas flow ratio O₂/(Ar+ O₂) of 15% namely, reaches a full width at half maximum intensity (FWHM) of BaTiO₃ (002) XRD peak of 0.25°. The FWHM of BaTiO₃ (002) XRD peak was further reduced to 0.24° via post-treatment with furnace annealing (at 800°C for 2 h) which indicates the film crystal quality is further improved. The bright and sharp TE modes measured by m-line spectroscopy of the BaTiO₃ film were observed indicating its possible application in optical waveguide.     

Gas sensing properties of nano SnO<Subscript>2</Subscript> based thick films prepared by dip coating method with effect of molarity of PtCl<Subscript>2</Subscript> solution

Synthesized nanophase SnO₂ powder was used as a functional material along with optimized 15 wt% of glass, fired at 550 °C for better adhesion, to fabricate thick films using screen printing on alumina substrate. Their surface was modified by dip coating in platinum chloride solution (PtCl₂) of different molarities (0.05–0.2 M). A subsequent thermal treatment to these thick films was carried out at an optimized temperature of 750 °C in air atmosphere. The films were tested for 400 ppm concentration of H₂, CO and LPG. Sensors dip coated with 0.15 M solution of PtCl₂ show the highest sensitivity towards the test gases which is ten times higher than undoped SnO₂ sensors.XRD, EDX and SEM measurements showed that the behavior could be associated with the spatial distribution of the platinum within the tin oxide film. The sensors have fast response time of 10 s to all the three gases with a minimum detection limit of 10 ppm.     

Fabrication and magnetoresistivit of ex-situ processed MgB<Subscript>2</Subscript>/Fe monofilament tapes without any intermediate annealing

We have fabricated MgB₂/Fe monofilament wires and tapes by a powder-in tube (PIT) technique, using an ex-situ process without any intermediate annealing. MgB₂/Fe monofilament tapes were annealed at 650–1,050°C for 60 min and 950°C for 30–240 min. We have investigated the effect of annealing temperatures and times on the formation of MgB₂ phase, activation energy, temperature dependence of irreversibility field H _irr(T) and upper critical field H _c2(T), transition temperature (T _c), lattice parameters (a and c), full width at half maximum, crystallinity, resistivity, residual resistivity ratio, active cross-sectional area fraction and critical current densities. We observed that the activation energies of the MgB₂/Fe monofilament samples increased with increasing annealing temperature up to 950°C and with increasing annealing time up to 60 min while it decreased with increasing magnetic field. For the MgB₂/Fe monofilament tape, the slope of the H _c2–T and H _irr–T curves decreased with increasing annealing temperature from 850 to 950°C as well as with increasing annealing time from 30 to 60 min. The transport and microstructure investigations show that T _c, J _c and microstructure properties are remarkably enhanced with increasing annealing temperature. The highest value of critical current density is obtained for the sample annealed at 950°C for 60 min. The J _c and T _c^offset values of the sample annealed at 950°C for 60 min were found to be 260.43 A/cm² at 20 and 38.1 K, respectively.     

Sensor properties of Pt doped SnO2 thin films for detecting CO

Polycristalline Pt-doped SnO₂ thin films have been integrated to silicon substrate by ultrasonic spray deposition. This deposition technique differs from the usual SnO₂ deposition methods by using a liquid source. It allows one to obtain a very fine and homogeneous dispersion of Pt aggregates which act as a catalyst for the low temperature CO detection (25–100°C) by conductance change. The influence of synthesis temperature (460–560°C), concentration of Pt additive (0.1–5 at.%) on gas sensitivity has been studied. The realisation of gas sensor includes a gas sensitive highly porous layer (SnO₂/Pt, thickness: ∼1 μm). The results of electrical measurements under 300 ppm of CO for thin films in a dynamic and quasistatic regime are discussed. The narrow peak of gas sensitivity in the range of low temperatures (25–100°C) is obtained for about 2 at.% Pt in the SnO₂ film.     

Enhanced catalytic activity of nanoscale platinum islands loaded onto SnO<Subscript>2</Subscript> thin film for sensitive LPG gas sensors

In the present study, different catalysts (∼ 10 nm thick) including metals, noble metals and metal oxides, were loaded in dotted island form over SnO₂ thin film for LPG gas detection. A comparison of various catalysts indicated that the presence of platinum dotted islands over SnO₂ thin film deposited by r.f. sputtering exhibited enhanced response characteristics with a high sensitivity, ∼ 742, at an operating temperature of ∼ 280°C. Different characterization techniques have been employed such as atomic force microscopy, X-ray diffraction and UV-vis spectroscopy, to study the surface morphology, grain size and optical properties of the deposited thin films. The results suggest the possibility of utilizing the sensor element with the present novel method of catalyst dispersal for the efficient detection of LPG.     

Structural,optical and electrical studies on nanocrystalline tin oxide (SnO<Subscript>2</Subscript>) thin films by electron beam evaporation technique

Nanocrystalline tin oxide (SnO₂) thin films were coated using electron beam evaporation technique on glass substrates. To study the gleaming out look of the structure and surface morphological changes, the films were annealed in the temperature 350–550 °C for 1 h. The annealed films were subjected to X-ray diffraction (XRD) and atomic force microscopy (AFM) studies. The XRD patterns of SnO₂ thin films as-deposited and annealed at 350 °C illustrate that the films were amorphous, and beyond 350 °C and thereafter they became polycrystalline with tetragonal structure. The crystallite size of the annealed films, obtained through the XRD analysis, increased with the increasing annealing temperature, and it was found to be from 3.6 to 12 nm. The photoluminescence (PL) studies on these films were also carried out. The origin of luminescence was assigned to the defects of the nanocrystalline SnO₂ films. The Optical studies (UV-VIS) were performed and the optical band gab energy (Eg) calculations, the dependence of absorption coefficient on the photon energy at short wavelengths, were found to be increasing from 3.65 to 3.91 eV is also investigated.     

Microstructure and electrical properties of thin HfO<Subscript>2</Subscript> deposited by plasma-enhanced atomic layer deposition

The influence of annealing in the temperature range of 150–300 °C during plasma-enhanced atomic layer deposition of HfO₂ and the conditions of the following thermal processing on microstructure and electrical properties have been studied. The microstructure was examined by transmission electron microscopy and electron diffraction. The as-deposited HfO₂ film consists of monoclinic crystallites embedded in an amorphous matrix. It was found that the crystallite density grows with the increase in the deposition temperature; however, the size of the crystallites does not change. Subsequent annealing at 425 °C for 30 min or at 950 °C for 4 s led to complete crystallization through the lateral growth of the crystallites of samples formed at 250 and 300 °C. However, for the sample formed at 150 °C, subsequent annealing at 425 °C resulted in the formation of dendritic-like crystalline clusters embedded in an amorphous matrix. The leakage currents in polycrystalline and even amorphous HfO₂ films after the annealing were drastically increased. That could be explained by crystallization after the annealing. However, the C impurity redistribution and the growth of an interfacial layer could also affect the leakage.     

Gas-sensor properties of SnO2 films implanted with gold and iron ions

SnO₂ gas-sensor films were modified by implantation of gold and iron ions. The change in electrical resistivity of the films caused by inflammable gases, H₂, CO, CH₄ and C₂H₅OH, was measured in the temperature range 100–500°C, and compared to non-implanted films. The morphological changes caused by gold and iron ion implantation were also investigated by atomic force microscopy. After ion implantation and annealing at 600°C, the sensitivity to H₂ and CO gas was found to increase, and the dynamic range of the sensitivity to ethanol was improved. The sensitivity to CH₄ was low before and after ion implantation. Fe₂O₃ (3%SnO₂) film was also modified by gold ion implantation for comparison. This revised version was published online in July 2006 with corrections to the Cover Date.     

Investigation of forming-gas annealed CeO<Subscript>2</Subscript> thin film on GaN

The effects of post-deposition annealing temperatures (400, 600, 800, and 1,000°C) in forming gas (95% N₂ + 5% H₂) ambient on metal–organic decomposed cerium oxide (CeO₂) thin films deposited on n-type GaN substrate had been investigated. The occurrence of CeO₂ phase transformation was reported and presence of CeO₂, α-Ce₂O₃, and β-Ga₂O₃ had been detected, depending on the annealing temperature. As the annealing temperature increased, grain size and microstrains of CeO₂ films were, respectively, increased and reduced. Metal–oxide–semiconductor characteristics of the annealed samples were systematically investigated. The highest dielectric breakdown field was perceived by sample annealed at 400°C due to the reduction of semiconductor–oxide interface trap density and effective oxide charge.     

CO<Subscript>2</Subscript> gas sensitivity of sputtered zinc oxide thin films

For the first time, sputtered zinc oxide (ZnO) thin films have been used as a CO₂ gas sensor. Zinc oxide thin films have been synthesized using reactive d.c. sputtering method for gas sensor applications, in the deposition temperature range from 130–153°C at a chamber pressure of 8·5 mbar for 18 h. Argon and oxygen gases were used as sputtering and reactive gases, respectively. ZnO phase could be crystallized using a pure metal target of zinc. The structure of the films determined by means of X-ray diffraction method indicates that the zinc oxide single phase can be fabricated in this substrate temperature range. The sensitivity of the film synthesized at substrate temperature of 130°C is 2·17 in the presence of CO₂ gas at a measuring temperature of 100°C.     

Conductance analysis of (Co,Nb, Fe)-doped SnO<Subscript>2</Subscript> thick film gas sensors

Thick films prepared with undoped nanometric SnO₂ particles and with (Co, Nb, Fe)-doped SnO₂ were studied with the purpose of developing oxygen and carbon monoxide gas sensors. The ceramic powders were obtained through the Pechini method. The morphological characteristics were studied with SEM and TEM, after which, they were subjected to sensitivity tests under different atmospheres. A correlation was established between the microstructure of the material, the effects of the additives, and the electrical behavior. The response of the sensor could be explained as the result of the characteristics of the intergranular potential barriers developed at intergrains. It was determined that the SnO₂-doped films have a greater sensitivity between 200 °C and 350 °C.     

Improvement of crystal quality and UV transparence of dielectric Ga2O3 thin films via thermal annealing in N2 atmosphere

Ga₂O₃ thin films were deposited on sapphire (0001) substrates by low-pressure metal organic chemical vapor deposition. The influence of annealing in N₂ atmosphere at the temperature in the range of 800–1,000 °C was investigated by X-ray diffraction and optical transmittance spectra. With an increase of annealing temperature from 800 to 950 °C, the transformation from the initial amorphous film to polycrystalline β-Ga₂O₃ thin film was observed, and the transmittance was also improved remarkably. The optical band gap energy of the sample annealed at 950 °C was evaluated as ~5 eV. Whereas, after an annealing at 1,000 °C, the crystal quality became worse and the transmittance degraded. The mechanism of annealing in N₂ atmosphere was discussed in view of phase transition.     

Microstructure and H<Subscript>2</Subscript>S gas sensing properties of nanocrystalline perovskite-type La<Subscript>0.6</Subscript>Co<Subscript>0.4</Subscript>Mn<Subscript>0.5</Subscript>Ni<Subscript>0.5</Subscript>O<Subscript>3</Subscript>

Nanocrystalline La_1−x Co _x Mn_1−y Ni _y O₃ (x = 0.2 and 0.4; y = 0.1, 0.3, and 0.5) thick films sensors prepared by sol–gel method were studied for their H₂S gas sensitivity. The structural and morphological properties have been carried out by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Average particle size estimated from XRD and TEM analyses was observed to be 30–35 nm. The gas response characteristics were found to depend on the dopants concentration and operating temperature. The maximum H₂S gas response of pure LaMnO₃ was found to be at 300 °C. In order to improve the gas response, material doped with transition metals Co and Ni on A- and B-site, respectively. The La_0.6Co_0.4Mn_0.5Ni_0.5O₃ shows high response towards H₂S gas at an operating temperature 250 °C. The Pd-doped La_0.6Co_0.4Mn_0.5Ni_0.5O₃ sensor was found to be highly sensitive to H₂S at an operating temperature 200 °C. The gas response, selectivity, response time and recovery time were studied and discussed.     

Effect of substrate temperature on properties of Cu(In,Ga, Al)Se<Subscript>2</Subscript> films grown by magnetron sputtering

Cu(In, Ga, Al)Se₂ (CIGAS) thin films were deposited by magnetron sputtering on Si(100) and soda-lime glass substrates at different substrate temperatures, followed by post-deposition annealing at 350 or 520 °C for 5 h in vacuum. Electron probe micro-analysis and secondary ion mass spectroscopy were used to determine the composition of the films and the distribution of Al across the film thickness, respectively. X-ray diffraction analysis showed that the (112) peak of CIGAS films shifts to higher 2θ values with increasing substrate temperature but remains unchanged when the films were annealed at 520 °C for 5 h. Scanning electron microscopy and atomic force microscopy images revealed dense and well-defined grains for both as-deposited and annealed films. However, notable increase in grain size and roughness was observed for films deposited at 500 °C. The bandgap of CIGAS films was determined from the optical transmittance and reflectance spectra and was found to increase as the substrate temperature was increased.     

Effects of post-deposition annealing temperature and ambient on RF magnetron sputtered Sm<Subscript>2</Subscript>O<Subscript>3</Subscript> gate on n-type silicon substrate

Samarium oxide (Sm₂O₃) thin films with thicknesses in the range of 15–30 nm are deposited on n-type silicon (100) substrate via radio frequency magnetron sputtering. Effects of post-deposition annealing ambient [argon and forming gas (FG) (90% N₂ + 10% H₂)] and temperatures (500, 600, 700, and 800 °C) on the structural and electrical properties of deposited films are investigated and reported. X-ray diffraction revealed that all of the annealed samples possessed polycrystalline structure with C-type cubic phase. Atomic force microscope results indicated root-mean-square surface roughness of the oxide film being annealed in argon ambient are lower than that of FG annealed samples, but they are comparable at the annealing temperature of 700 °C (Argon—0.378 nm, FG—0.395 nm). High frequency capacitance–voltage measurements are carried out to determine effective oxide charge, dielectric constant and semiconductor-oxide interface trap density of the annealed oxide films. Sm₂O₃ thin films annealed in FG have smaller amount of effective oxide charge and semiconductor-oxide interface trap density than those oxide films annealed in argon. Current–voltage measurements are conducted to obtain barrier heights of the annealed oxide films during Fowler–Nordheim tunneling.     

Rutile TiO<Subscript>2</Subscript> films as electron transport layer in inverted organic solar cell

Titanium dioxide (TiO₂) thin films were prepared by sol–gel spin coating method and deposited on ITO-coated glass substrates. The effects of different heat treatment annealing temperatures on the phase composition of TiO₂ films and its effect on the optical band gap, morphological, structural as well as using these layers in P3HT:PCBM-based organic solar cell were examined. The results show the presence of rutile phases in the TiO₂ films which were heat-treated for 2 h at different temperatures (200, 300, 400, 500 and 600 °C). The optical properties of the TiO₂ films have altered by temperature with a slight decrease in the transmittance intensity in the visible region with increasing the temperature. The optical band gap values were found to be in the range of 3.28–3.59 eV for the forbidden direct electronic transition and 3.40–3.79 eV for the allowed direct transition. TiO₂ layers were used as electron transport layer in inverted organic solar cells and resulted in a power conversion efficiency of 1.59% with short circuit current density of 6.64 mA cm^?2 for TiO₂ layer heat-treated at 600 °C.     

Reduction the leakage current through povidone-SiO<Subscript>2</Subscript> nano-composite as a promising gate dielectric of FETs

In the present study, povidone-SiO₂ nano-composite dielectric film was introduced to replace SiO₂ gate dielectric film. The organic and inorganic particles homogeneously dispersed in nano-composite film. The structure of nano-composite film was affected by annealing temperatures. By increase in annealing temperature up to 200?°C, wt% of carbon, oxygen and nitrogen increased and wt% of silicon decreased. At 240?°C, the organic phase desorbed and nano-composite structure degraded. The annealing temperature of 150?°C was suitable for adhesion between two phases. The cross-linked structure of dielectric film annealed at 150?°C led to decrease in leakage current.