未知信源数的宽带波束域相干源测向算法

对MUSIC算法进行了改进,提出了一种无需估计信源数的宽带波束域相干源测向算法,避免了由于信源数估计不准确以及存在相干源扰动时的测向失效问题,并通过恒定束宽波束形成,在减少测向计算量的同时,对宽带信号进行了空间聚焦,可同时适用于窄带信号和宽带信号测向,大大拓展了MUSIC算法的适应能力,为其在不同领域获得广泛应用扫清了算法上的障碍。仿真结果证实了所提出改进算法的有效性。     

Experimental studies of the adequacy of laser simulations of dose rate effects in integrated circuits and semiconductor devices

Comparative experimental studies of the responses of typical representatives of integrated circuits (ICs) and semiconductor devices (SDs) with various designs to high-energy pulsed ionizing radiations from simulation facilities and laser simulators have been carried out. The differences between the hardness values under exposure to radiations from simulation facilities and laser simulators have been found to be no larger than the dosimetry errors when the power supply ionization current calibration procedure is used. The shapes of power supply ionization currents and output voltages in the ICs are almost identical qualitatively. The levels and patterns of the functional IC failures are completely identical for both types of radiation sources. As a result, we have proven that a joint application of simulation facilities and laser simulators provides a rational combination of the reliability and efficiency of testing ICs and SDs for hardness to dose rate.     

Prediction of Local and Global Ionization Effects on ICs: The Synergy between Numerical and Physical Simulation

A review is presented of an integrated approach to hardness assurance, embracing single-event and global pulsed-ionization effects. The strategy essentially combines numerical and physical simulation in order to obtain reliable data on IC radiation response with minimum expenditure of time and money. The way in which calculations and measurements should be combined depends on the type of IC and the radiation conditions. It is shown that the cost of measurement can be reduced by using laboratory radiation simulators and each form of radiation of interest can be simulated with an agent readily available for the tester. Particular coverage is given to simulation with lasers.     

Radiation testing of semiconductor devices for space electronics

Radiation effects testing, part selection, and hardness assurance for application to electronic components in the natural space environment are discussed. The emphasis is on semiconductor devices, primarily silicon microcircuits, which are used in the greatest quantity and which, in most cases, are the most sensitive. After a summary of the natural space radiation environment and the effects of radiation on semiconductor devices, laboratory simulation of space radiation and extrapolation to space are covered. Radiation testing is performed to understand failure mechanisms, to characterize the radiation response of specific devices, and to provide data for lot acceptance. Part selection and hardness assurance are discussed by contrasting the traditional approach with the unique aspects of space systems. Some recommendations are made for treating the more complex aspects of space system microcircuit hardness assurance     

SOI/SOS MOSFET compact macromodel taking into account radiation effects

A compact BSIMSOI-RAD macromodel for SOI/SOS CMOS transistors is developed that takes into account the radiation effects. An automated procedure for determination of macromodel parameters is described and shown to be useful for analyzing radiation hardness of CMOS IC fragments depending on the total absorbed dose. The simulation time is estimated.     

A new modular design for test and application PCBs of SAW RF filters to ensure precisely predictable filter characteristics

This paper presents the design of an optimized test and application setup for surface acoustic wave (SAW) RF filters. These structures have been investigated, including the test devices, by simulation techniques based on full-wave methods and common SAW simulation methods. In this paper, the simulation technique will be explained in detail, focusing on the interfaces of the simulation models. Parasitic electromagnetic effects in the test and application setup will be analyzed by simulation and measurement. This paper demonstrates the possibility of accurate performance prediction of SAW RF filters using specially designed test setups in the measurement and an optimized application environment, e.g., in mobile phones. Modular parts for such test setups and the application environment are discussed.     

基于横电磁波小室的IC辐射发射测试方法研究

集成电路(IC)的发展呈现出小型化和集成化的趋势,使得IC电磁辐射越来越强,准确测试出IC电磁辐射对于集成电路电磁兼容设计有重要意义。横电磁波(TEM)小室法是目前最常用的IC辐射测试方法,它使用方形测试板,测试四个角度(0°, 90°, 270°, 360°)的IC辐射值,然而IC电磁辐射具有角度效应,仅用四个角度无法准确测试出IC最大电磁辐射水平。文中基于TEM小室全波仿真模型,使用单根微带线,验证了角度对于IC辐射的影响。设计了基于STM32芯片的圆形测试板和方形测试板,利用TEM小室测试了不同角度、不同模式下的STM32芯片电磁辐射,测量结果证实了不同模式下圆形测试板的测试结果都要大于方形测试板,最大偏差达到16 d Bm,因此圆形测试板更能准确测出芯片的最大电磁辐射水平。     

Radiation-Induced Fault Simulation of SOI/SOS CMOS LSI’s Using Universal Rad-SPICE MOSFET Model

The methodology of modeling and simulation of environmentally induced faults in radiation hardened SOI/SOS CMOS IC’s is presented. It is realized at three levels: CMOS devices – typical analog or digital circuit fragments – complete IC’s. For this purpose, a universal compact SOI/SOS MOSFET model for SPICE simulation software with account for TID, dose rate and single event effects is developed. The model parameters extraction procedure is described in great depth taking into consideration radiation effects and peculiarities of novel radiation-hardened (RH) SOI/SOS MOS structures. Examples of radiation-induced fault simulation in analog and digital SOI/SOS CMOS LSI’s are presented for different types of radiation influence. The simulation results show the difference with experimental data not larger than 10–20% for all types of radiation.     

PLL soft functional failure analysis in advanced logic product using fault based analogue simulation and soft defect localization

Soft defect localization (SDL) is an analysis technique where changes in the pass/fail condition of a test are monitored while a laser is scanned across the device under test (DUT). This technique has proven its usefulness for quickly locating defects that are temperature, frequency, and/or voltage dependant, for example, scan logic soft fault. However, due to high sensibility at analogue circuits SDL meets great challenges. This work gives a new flow to analyze soft functional failure in advanced logic products using fault based analogue simulation and SDL. The paper will present one case study illustrating the application of analogue simulation based soft defect localization flow as an effective means to achieve fault isolation.     

An adaptive simulation framework for AMS-RF test quality

Ensuring the quality of a circuit implies ensuring the quality of test. Despite the fact that performance-based testing has been the golden standard for Analog, Mixed-Signal and RF test for decades, high-reliability markets like automotive have found that functional test leaves some potential defects undetected that can produce in-field failure. There is thus a push towards defect-oriented testing which, in turn, calls for an efficient defect simulation framework. This paper presents a statistical adaptive defect simulation based on likelihood-weighted random sampling to evaluate the quality of AMS-RF tests in terms of defect coverage and fault escape. The adaptive loop takes a decision at each new defect simulation on whether it is more efficient to assess the defect coverage or the fault escape rate of the test under evaluation, as a function of the desired targets for these two metrics. Several decision criteria are proposed and validated by simulation of a complete IC for different tests.     

用频装备带内双频窄谱电磁辐射阻塞干扰效应预测模型

针对传统单频连续波电磁辐射敏感度试验方法无法满足用频装备多辐射源共同作用下复杂电磁环境适应性评估的技术需求，本着有限目标的原则，对用频装备在带内双频窄谱电磁辐射作用下的阻塞干扰效应预测问题进行了研究.从用频装备单频和调幅连续波敏感度试验数据出发，基于用频装备带内电磁能量耦合及共性干扰、损伤作用机理分析，研究了有效值敏感和峰值敏感两类用频装备带内双频窄谱电磁辐射阻塞干扰效应预测模型并提出了预测方法，给出了受试用频装备适用预测模型的判定方法，并以某型超短波通信电台为受试对象，试验验证了模型及方法的有效性.研究结果表明:本文提出的模型和方法可有效应用于用频装备在带内双频电磁辐射作用下的阻塞干扰效应预测和评估.     

硅片缺陷粒径分布参数的提取方法

利用电学测量方法,给出了在集成电路制造过程中,影响光刻工艺的各种颗粒尘埃(缺陷)的粒径分布参数提取方法.首先基于双桥微电子测试结构,通过具体制造工艺得到数据,然后处理得到故障的粒径分布.再利用缺陷与故障之间的关系,进一步推导出缺陷粒径分布的参数.结果表明该方法适合于不同的缺陷粒径分布模型,而且得到的参数可以用于集成电路成品率预测.     

基于MAYR电弧模型的船舶直流配电系统熔断器仿真研究

大功率变频器和储能设备的接入,对船舶直流配电系统在各种工况下的安全运行提出了考验。由于针对船舶直流配电系统专门搭建实验环境模拟短路故障实验复杂且代价高昂,因此提出了一种基于MAYR电弧模型熔断器的仿真选型方案。在MATLAB/SIMULINK平台进行模拟短路故障仿真,能够较精确地复现短路故障熔断器状态。结合短路故障实际工况,搭建系统故障模型进行仿真。结果表明,基于MAYR模型的熔断器在短路故障发生时可以有效保护网络组件,能对熔断器和断路器的选型提供更可靠的参考依据。     

Fault Detection of Linear Analog Integrated Circuit in Network

This paper presents a novel network decomposition method that can detect faults of linear analog integrated circuit (IC) in network. The nodal admittance matrix (NAM) of linear analog IC is a function of its internal component values, which can be used for fault detection. However, it is difficult to obtain the NAM of linear analog IC in network. We propose a network decomposition based method to calculate the NAM of the IC under test in network. The IC under test is fault free, if its NAM lies inside the tolerance limit. Otherwise, it is faulty. The effectiveness of the proposed method is validated through benchmark circuits.     

Radiation hardness of static random-access-memory tested usingdose-to-failure and gamma-ray exposure

A dose-to-failure, which is extracted by measuring the number of error bytes as a function of dose, is proposed and then demonstrated to be an ideal parameter for radiation-hardness test of a static random-access-memory (SRAM). The radiation exposure is performed using the Co-60 gamma ray. The test conditions of dose rate, power-supply voltage, and temperature must be specified. The possible mechanisms for the changes of radiation hardness at various test conditions are explained. The radiation hardness tests of SRAM are useful for the practical assessment of integrated circuit (IC) reliability     

航空红外相机成像故障仿真研究

本文基于光学相机成像效应仿真模型，提出了一种航空红外相机典型故障效应仿真方法。在对航空红外相机的光学系统、探测器、电子电路信号对成像效应进行深入仿真的基础上，对不同类型成像故障效应进行了模拟，采用典型故障的成像表现评价指标进行全面验证评价。研究结果表明：基于红外相机成像效应的仿真模型可有效模拟多种故障成像效应，能对装备的使用维护、试验鉴定中的故障的初步分析发挥重要的指导作用。     

一种由合格品的单侧截尾性能数据估计半导体元器件成品率的经验公式

本文研究了仅根据合格样品的性能测试数据估计半导体元器件成品率的问题。基于成品率与过程能力指数的关系构造了一种经验公式,当合格样品的性能数据服从单侧截尾正态分布时,可由样本均值和标准差直接计算成品率。首先,比较了四种常用正态性检验法的功效,结果表明在识别单侧截尾正态样本时Shapiro–Wilk检验功效最高。其次,使用蒙特卡洛仿真法比较了极大似然法和经验公式的估计精度,结果表明在利用单侧截尾正态样本估计成品率时,该经验公式利用极其简单的运算就可取得与极大似然法几乎完全相同的精度。此外当满足一定的条件时,该公式亦可用于双侧截尾正态样本的成品率估计。使用文献中的数据以及芯片实测数据估计成品率,验证了该方法的有效性。     

红外探测器辐照机理分析及辐照试验验证

红外探测器处于太空或辐射环境会受到各种辐射粒子作用,其性能会发生衰减。本文主要分析了各种辐射效应对HgCdTe红外探测器性能影响机理。针对红外探测器复合钝化加固方法,ROIC环源环栅加固方法进行试验验证。辐照试验显示,加固后的红外探测器互联抗辐照读出电路,其抗总剂量、抗剂量率及抗中子辐射位移达到了比较好抗辐照效果。     

硅基材料烧蚀产物对高温气体流场辐射影响

高温气体流场辐射特性在高超声速飞行器目标探测、识别和气动热环境预测等方面具有重要应用。基于带辐射模型,考虑硅基防热材料热化学烧蚀产物的可见光和红外辐射机制,建立了烧蚀产物光谱参数的计算方法,发展了高温气体烧蚀流场辐射特性计算软件。高温气体烧蚀流场的数值模拟结果,利用所发展的辐射计算软件,计算分析了自由飞弹道靶实验模型及高超声速钝头体流场的辐射特性,重点研究了各种烧蚀产物的影响。研究表明:烧蚀产物对流场红外辐射特性具有重要影响。