Improved planar spiral transformer theory applied to a miniaturelumped element quadrature hybrid

In this paper, an improved method of determining the primary-to-secondary coupling capacitance for planar spiral transformers (PST's) is presented, which enhances previous work. A more general monolithic microwave integrated circuit (MMIC) compatible lumped element multisection model is also presented based on symmetric-width uniformly coupled transmission lines. These techniques were developed to design a 90° hybrid as a MMIC with a center frequency of 2.5 GHz. The design was frequency scaled to 0.5 GHz and fabricated in the microwave integrated circuit (MIC) for verification. Producibility is enhanced and coupling is effectively increased with the novel use of series capacitors which cancel some of the self-inductance of the transformers. Measured results are presented for both a quadrature hybrid and the individual PST used in the quadrature hybrid. The measured results show excellent agreement with the computer models     

A highly linear double balanced Schottky diode S-band mixer

A high-level double balanced SiC Schottky diode mixer in SiC monolithic microwave integrated circuit (MMIC) technology has been designed, processed and characterized. The mixer is a single ended in- and output circuit with coupled transformers as baluns to enable a compact design, resulting in a total area of 2.2/spl times/2.2mm/sup 2/. The mixer has a maximum IIP/sub 3/ of 38dBm and IIP/sub 2/ of 58dBm at 3.3GHz, and a typical P/sub 1 dB/ of 23dBm in the S-band. The minimum conversion loss was 12dBm at 2.4GHz. The high power operation of the mixer shows that SiC MMIC can perform well in high microwave radiation environments.     

38-GHz-band high-power MMIC amplifier module for satellites onboard use

The design and development results of 38-GHz high-power MMIC amplifier modules for use in the solid-state power amplifier (SSPA) to be carried aboard Engineering Test Satellite VI in 1993 are presented. This amplifier will be used in millimeter-wave intersatellite communication experiments. For the development of this amplifier, high-power, highly reliable FETs with 0.25-μm-long gates were designed. The FET large-signal impedance was accurately measured using an improved load-pull method and MMIC transformers. The measurements were used to design two types of MMICs: one composed of two FET cells with 600-μm-wide gates and the other of four FET cells with 400-μm-wide gates. A two-stage amplifier package consisting of two of these MMICs that can be used at 38 GHz is also developed. A P _o(1 dB) of 25 dBm and a gain of 11 dB are obtained. A 38-GHz test conducted during chip screening achieves a high production yield without circuits adjustment     

Multioctave spatial power combining in oversized coaxial waveguide

We describe a multioctave power-combiner structure using finline arrays in an oversized coaxial waveguide. The spectral-domain method (SDM) is used to compute the propagation constant in this structure, and is verified with HFSS simulations. The SDM method is then employed to synthesize broad-band tapered impedance transformers in finline for coupling energy to and from a set of monolithic microwave integrated circuit (MMIC) amplifiers. A modular assembly is described using a sectoral tray architecture. The concept is demonstrated for a 32-MMIC system using low-power traveling-wave amplifier MMICs, providing a 3-dB bandwidth of 13 GHz (3-16 GHz). An output combining loss of 1 dB is estimated from the small-signal measurements, suggestion a combining efficiency of ~75% for 32 MMICs     

Shielded passive devices for silicon-based monolithic microwave and millimeter-wave integrated circuits

This paper introduces floating shields for on-chip transmission lines, inductors, and transformers implemented in production silicon CMOS or BiCMOS technologies. The shield minimizes losses without requiring an explicit on-chip ground connection. Experimental measurements demonstrate Q-factor ranging from 25 to 35 between 15 and 40 GHz for shielded coplanar waveguide fabricated on 10 /spl Omega//spl middot/cm silicon. This is more than a factor of 2 improvement over conventional on-chip transmission lines (e.g., microstrip, CPW). A floating-shielded, differentially driven 7.4-nH inductor demonstrates a peak Q of 32, which is 35% higher than an unshielded example. Similar results are realizable for on-chip transformers. Floating-shielded bond-pads with 15% less parasitic capacitance and over 60% higher shunt equivalent resistance compared to conventional shielded bondpads are also described. Implementation of floating shields is compatible with current and projected design constraints for production deep-submicron silicon technologies without process modifications. Application examples of floating-shielded passives implemented in a 0.18-/spl mu/m SiGe-BiCMOS are presented, including a 21-26-GHz power amplifier with 23-dBm output at 20% PAE (at 22 GHz), and a 17-GHz WLAN image-reject receiver MMIC which dissipates less than 65 mW from a 2-V supply.     

Fully Integrated HBT MMIC Series‐Type Extended Doherty Amplifier for W‐CDMA Handset Applications

A highly efficient linear and compactly integrated series‐type Doherty power amplifier (PA) has been developed for wideband code‐division multiple access handset applications. To overcome the size limit of a typical Doherty amplifier, all circuit elements, such as matching circuits and impedance transformers, are fully integrated into a single monolithic microwave integrated circuit (MMIC). The implemented PA shows a very low idle current of 25 mA and an excellent power‐added efficiency of 25.1% at an output power of 19 dBm by using an extended Doherty concept. Accordingly, its average current consumption was reduced by 51% and 41% in urban and suburban environments, respectively, when compared with a class‐AB PA. By adding a simple predistorter to the PA, the PA showed an adjacent channel leakage ratio better than —42 dBc over the whole output power range.     

W及以上波段MMIC放大器的研究进展

在阐述W及以上波段MMIC放大器性能的基础上,回顾了以InP HEMT MMIC放大器为主流技术的W及以上波段MMIC放大器的研究进展,介绍了基于InP HBT、GaAs MHEMT和SbHEMT的MMIC放大器的研制水平,指出目前研制的W及以上波段MMIC放大器的应用领域,突显其在MMIC高端技术领域的重要性.针对欧美国家在该领域飞速发展而我国处于相对劣势的现状,对我国研发W及以上波段MMIC放大器提出初步建议.     

卫星应答机用30GHz单片微波集成电路接收机

木文首先介绍了全微波集成电路(MMIC)化接收机的构成,然后讨论了低噪声放大器、宽带相移网络的镜像抑制型混频器、压控振荡器、模拟分频器、倍频器的MMlC电路设计和试验结果,以及利用这些MMIC电路构成镜像抑制型变频器和锁相环型本振,研制全MMIC化接收机的实践.     

2～12GHz GaAs单片行波放大器

报道了一个全平面超宽带ＧａＡｓ单片行波放大器的研究结果。该单片电路的核心部件是四个３００μｍ栅宽的ＭＥＳＦＥＴ，整个电路拓扑结构简单，芯片面积为３．０ｍｍ×１．８ｍｍ。电路经优化设计后在２～１２ＧＨｚ范围内，小信号增益为５±１ｄＢ，输入输出电压驻波比≤１．７５。上述频率范围内输出功率≥１６ｄＢｍ，噪声系数≤８ｄＢ。采用全离子注入、全平面工艺，均匀性、一致性良好。实验结果与设计预计值十分一致。     

S波段单片低噪声放大器与混频器

南京电子器件研究所最近利用76mmGaAsMMIC工艺线研制出数种单片电路。封面照片为S波段低噪声放大器与混频器单胞及大圆片照片，初步微波性能如下：放大器：增益＞22dB；噪声系数＜1．5dB；输入输出驻波＜1．5混频器：变频增益＞4dB；各端口驻波＜1．5；各端口隔离度＞24dB电源：±5VS波段单片低噪声放大器与混频器     

Simple 1 MM Receivers with a Fixed Tuned Double Sideband SIS Mixer and a Wideband INP MMIC Amplifier

We report on techniques to broaden the intermediate frequency (IF) bandwidth of the Berkeley‐Illinois‐Maryland Array (BIMA) 1mm Superconductor‐Insulator‐Superconductor (SIS) heterodyne receivers by combining fixed tuned Double Side Band (DSB) SIS mixers and wideband Monolithic Microwave Integrated Circuit (MMIC) IF amplifiers. To obtain the flattest receiver gain across the IF band we tested three schemes for keeping the mixer and amplifier as electrically close as possible. In Receiver I, we connected separate mixer and MMIC modules by a 1 ″ stainless steel SMA elbow. In Receiver II, we integrated mixer and MMIC into a modified BIMA mixer module. In Receiver III, we devised a thermally split block in which mixer and MMIC can be maintained at different temperatures–in this receiver module the mixer at 4 K sees very little of the 10–20 mW heat load of the biased MMIC at 10 K. The best average receiver noise we achieved by combining SIS mixer and MMIC amplifier is 45 ‐50 K DSB for ν_LO = 215–240 GHz and below 80 K DSB for ν_LO = 205 ‐ 270 GHz. Over an IF frequency band of 1 – 4 GHz we have demonstrated receiver DSB noise temperatures of 40 – 60 K. Of the three receiver schemes, we feel Receiver III shows the most promise for continued development.     

级联型单级分布式宽带单片功率放大器

报道了一个采用级联型单级分布式结构的宽带单片功率放大器的设计方法和研制结果。文中通过拓扑比较和人工传输线理论研究,分析出该功放设计的难点,并基于仿真实验,给出解决方案。最终研制的两级单片功放在6～18GHz频率范围内线性增益13.5dB,平坦度±1dB,输入输出驻波比均小于2。全频带上,饱和输出功率为300～450mW,功率附加效率大于15%。该宽带单片功率放大器在100mm GaAs MMIC工艺线上采用0.25μm功率pHEMT标准工艺制作,芯片尺寸为2.7mm×1.25mm×0.08mm。     

Ultra-wideband MMIC active power splitters with arbitrary phaserelationships

Novel MMIC active power splitters, which allow arbitrary phase division over wide frequency ranges exceeding an octave in bandwidth, are proposed. An FET's inherent phase inversion properties together with phase adjustment circuits, e.g., common drain FETs followed by phase-shift transmission lines, can be successfully combined for broadband, arbitrary phase division. As an example of this technique, an MMIC active quadrature splitter has been designed and fabricated in a 1.1 mm×0.7 mm chip area. A phase error of less than 5° with a magnitude imbalance of less than 1 dB has been demonstrated over a double-octave frequency range of 7.2-21.6 GHz. The MMIC active power splitter promises to make possible miniaturized, full MMIC signal processing components     

MMIC工业开发和标准工艺加工线(Foundry)

本文简要介绍了MMIC的应用和市场潜力,讨论了工业开放Foundry的建设和MMIC工业开发的关键因素,还给出了有关市场上销售的GaAsMMIC放大器和组件的资料。     

A 30 GHz MMIC receiver for satellite transponders

The development of 30-GHz-band monolithic microwave integrated circuits (MMICs) and multichip MMIC modules (low-noise amplifier and frequency converters) is reported. A 30-GHz-band full-MMIC receiver for satellite transponders was successfully constructed using the MMIC modules and the performance of the full-MMIC receiver is evaluated. Test results verify its successful performance as a satellite receiver system. The design and performance of the MMICs (a two-stage amplifier, an image rejection mixer, and a frequency multiplier), of multichip-type MMIC modules (a 30-GHz-band low-noise amplifier module with 30 dB gain and 8.2 dB noise figure, and an image rejection frequency converter with a 10 dB conversion loss and an 18 dB image rejection ratio) and of the full-MMIC receiver, which weighs 1/6 as much as a conventional hybrid integrated circuit are presented     

发展氮化镓集成电路的考虑

介绍了氮化镓微电子器件的优势和现状。提出将GaNHEMT作为微波器件用于混合微波集成电路(MIC)和微波单片集成电路(MMIC),在射频输出功率、器件优值等方面,均具有明显优点,并列举了成功的例子。为了加快发展MMIC,必须解决好几个关键问题,即提高材料质量和尺寸,完善制造工艺,克服器件电流下降、增益过早饱和与射频输出功率退化等现象。     

MMIC 14-GHz VCO and Miller Frequency Divider for Low-Noise Local Oscillators

An MMIC voltage-controlled oscillator and an MMIC frequency divider are developed and applied to a 14-GHz low-noise local oscillator. To obtain both wide tuning range and low pulling figure, the source-follower FET circuit is used in the voltage-controlled oscillator. A wide-band balanced mixer and a filtering amplifier are integrated in a single chip and constitute the Miller frequency divider. -The MMIC's were assembled into a 14-GHz phase-locked loop in order to demonstrate that they will operate as key components of low-noise oscillators. It is shown experimentally that even for low-Q MMIC circuitry, the carrier noise of the oscillator is reduced enough for practical purposes such as space-borne heterodyne receivers, transmitters, and radio repeaters in Ku-band satellite communication systems. Thus, prospects are bright for development of single-chip microwave low-noise oscillators.     

X波段及DBS接收用PHEMT单片低噪声放大器

报道了X波段及DBS接收用单片低噪声放大器的研制结果。利用CAD软件对单片电路进行优化设计，设计工作包括MBE材料、PHEMT器件和单片电路三部分。在研制过程中，开展了关键工艺的专题研究。研究结果为：单级单片放大器在10：5－11．6GHz范围内，NF≤1．82dB，G≥7.72dB；在11．7－12．2GHz范围内，NF≤1．80dB，G≥6．8dB；双级放大器在10．4－11．1GHz范围内，NF≤1．96dB，G≥15．3dB，最低噪声系数为1．63dB，最高增益为16．07dB。     

基于GaN芯片的宽带固态功率放大器设计

介绍了一种基于GaN功率放大芯片的Ku波段宽带固态功率放大器的设计与实现。通过采用目前已经成熟的合成技术,进行了128路的功率合成,获得了大于1 000W的宽带输出功率和20%的功率附加效率,并分析了基于GaN芯片的固态功放的优势。     

The influence of ion-implanted profiles on the performance of GaAsMESFET's and MMIC amplifiers

The RF small-signal performance of GaAs MESFETs and MMIC amplifiers as a function of various ion-implanted profiles is theoretically and experimentally investigated. Implantation energy, dose, and recess-depth influence are theoretically analyzed with the help of a novel device simulator. The performance of MMIC amplifiers processed with various energies, doses, recess depths, and bias conditions is discussed and compared to experimental characteristics. Some criteria are proposed for the choice of implantation conditions and process in order to optimize the characteristics of ion-implanted FETs and to realize process-tolerant MMIC amplifiers