在1.8GHz频率下功率密度为2.8W／mm的4H—SiCMESFET

本文论述了使用４Ｈ－ＳｉＣ衬底及外延层制作ＭＥＳＦＥＴ的方法，测得了栅长为０．７μｍ、栅宽为３３２、ｍ的ＭＥＳＦＥＴ的直流、Ｓ参数和输出功率特性。     

1．8GHz下功率密度为2．8W／mm的4H－SiC MES FET

１．８ＧＨｚ下功率密度为２．８Ｗ／ｍｍ的４Ｈ－ＳｉＣＭＥＳＦＥＴ据《ＩＥＥＥＥ．Ｄ．Ｌ．》第１５卷第１０期报道，ＣｈａｒｌｅｓＥ．Ｗｅｉｔｚｅｌ等已研制成一种４Ｈ－ＳｉＣＭＥＳＦＥＴ。采用４Ｈ－ＳｉＣ是由于它比６Ｈ－ＳｉＣ高出两倍的电子迁移率。器件的...     

1．8GHz／1．3GHz、低失真、双路ADC驱动器

LTC6420-20和LTC6421-20是高速双路差分ADC驱动器,它们无须任何外部输出阻抗匹配就可以直接驱动ADC,还可以将单端输入转换成差分输出。性能特点：±0．25dB的增益匹配;±0．1°的相位匹配;1．8GHz-3dB带宽（LTC642020）,1．3GHz-3dB带宽（LTC6421—20）;     

2．6～2．8GHz100W硅微波脉冲功率晶体管

研究并制造了2．6～2．8GHz输出功率100W、脉宽1μs、占空比25％、增益7dB、效率35％的硅微波脉冲功率晶体管。本文介绍了该器件的设计考虑和采用的工艺技术，给出了研制结果。     

4～8 GHz宽带频率合成器的设计

研究了一种采用ADI公司的ADF4153小数N分频PLL频率合成器芯片来实现宽频带、小步进的频率合成器的方法.ADF4153可以实现无线通信系统接收机和发射机中本地振荡器,他包括低噪声的数字鉴频鉴相器、电荷泵和可编程分频器.该频率合成器频率范围4～8 GHz,步进1 MHz,且在8 GHz输出时,相位噪声低于-85 dBc/Hz@1 kHz.     

基于W935XX的2．4GHz数字无绳操作系统的构建

自DECT和WDCT标准诞生以来，全球2．4GHz数字无绳技术经过多年的持续发展，从上游的基带芯片、射频（RF）芯片、实时操作系统到下游的应用层软件等各项技术均已成熟，形成了一条完整的产业链。相对于模拟无绳电话，2．4GHz数字无绳电话具有高清晰通话音质、安全保密抗干扰、更大通话范围、功耗低电力持久、     

1．8V 5．2GHz差分结构CMOS低噪声放大器

本文给出了利用0．18umCMOS工艺设计的5．2GHz低噪声放大器。在1．8V电压下，工作电流为24mA增益为15．8dB噪声系数为1．4dB.     

用于2．4GHz ISM的功率放大器

SE2597L主要用于802．11b／g／nWLAN等2.4GHzISM频带应用,是一种通用型全输入匹配PA,它专为高性能而优化,能够提供＋20dBm的输出功率,误差向量幅度为3％。SE2597L的工作电压为3．3VDC,＋20dBm时耗电只有170mA。其采用BiCMOS技术制造,不含卤素,并符合RoHs指令要求;     

覆盖频率为0．5GHz～18GHz的新天线

Microtech公司开发出新系列天线，仅用3根天线就可覆盖0．5GHz-18GHz的频率。第一种天线是对数周期天线，覆盖频率为0．5GHz-2GHz；第二种天线是双极化四芯线脊峰天线，覆盖频率为2GHz-8GHz；第三种天线是双极化四芯线脊峰喇叭型天线，覆盖频率为8GHz-18GHz。各种天线在全部端口都有SMA接插件，并用防尘罩保护内部机械装置。     

TI首款频率为1GHz的DSP

2004年2月，德州仪器(TI)宣布推出适用于2．5与3G移动电话的新型OMAP2架构，它将目前流行的各种设备转换成一种高品质的个人娱乐体验。通过支持诸如互动3D游戏、4百多万像素相机、数码摄像机、TV等功能，TI将把高端性能消费者对数字消费类电子产品的期望带入到智能电话领域。TI最先推     

4H-SiC MESFET with 2.8 W/mm power density at 1.8 GHz

MESFET's were fabricated using 4H-SiC substrates and epitaxy. The D.C., S-parameter, and output power characteristics of the 0.7 μm gate length, 332 μm gate width MESFET's were measured. At ν_ds =25 V the current density was about 300 mA/mm and the maximum transconductance was in the range of 38-42 mS/mm. The device had 9.3 dB gain at 5 GHz and f_max=12.9 GHz. At V_ds=54 V the power density was 2.8 W/mm with a power added efficiency=12.7%     

8.9W/mm高功率密度SiC MESFET器件研制

基于自主研发的碳化硅(SiC)材料外延技术,优化了材料各层结构及参数,减小了Al记忆效应,最终得到了高质量SiC外延片。采用自主研发成熟的SiC MESFET工艺平台,制作了多凹栅器件结构,优化了凹槽尺寸,采用细栅制作技术完成了栅电极制作,最终得到了不同栅宽的SiC MESFET芯片。突破了大栅宽芯片流片、封装及大功率脉冲测试技术,研制成功了微波功率特性良好的MESFET器件。微波测试结果表明,在2 GHz脉冲条件下,0.25 mm栅宽器件,输出功率密度达到8.96 W/mm,功率附加效率达到30%。单胞20 mm大栅宽器件,3.4 GHz脉冲条件下,功率输出达到94 W,功率附加效率达到22.4%。     

An InP MISFET with a power density of 1.8 W/mm at 30 GHz

The millimeter-wave power performance of a 75-μm×0.3-μm InP MISFET with SiO₂ insulator is presented. The combination of high intrinsic transconductance (120 mS/mm), current density (1 A/mm), and gate-source and gate-drain breakdown voltages (35 V) led to a record power density of 1.8 W/mm and 20% power-added efficiency at 30 GHz. This power density is the highest ever reported for any three-terminal device at this frequency     

Record gain at 3.1 GHz of 4H-SiC high power RF MESFET

In this paper, a very high gain 4H-SiC power MESFET with incorporation of L-gate and source field plate (LSFP-MESFET) structures for high power and RF applications is proposed. The influence of L-gate and source field plate structures on saturation current, breakdown voltage (V_b) and small-signal characteristics of the LSFP-MESFET was studied by numerical device simulation. The optimized results showed that V_b of the LSFP-MESFET is 91% larger than that of the 4H-SiC conventional MESFET (C-MESFET), which meanwhile maintains almost 77% higher saturation drain current characteristics. The maximum output power densities of 21.8 and 5.5 W/mm are obtained for the LSFP-MESFET and C-MESFET, respectively, which means about 4 times larger output power for the proposed device. Also, the cut-off frequency (f_T) of 23.1 GHz and the maximum oscillation frequency (f_max) of 85.3 GHz for the 4H-SiC LSFP-MESFET are obtained compared to 9.4 and 36.2 GHz for that of the C-MESFET structure, respectively. The proposed LSFP-MESFET shows a new record maximum stable gain exceeding 22.7 dB at 3.1 GHz, which is 7.6 dB higher than that of the C-MESFET. To the best of our knowledge, this is 2.5 dB greater than the highest gain yet reported for SiC MESFETs, showing the potential of this device for high power RF applications.     

C波段0.75mm AlGaN/GaN功率器件

研制并测试了以蓝宝石作衬底的10× 75μμm_0.8μm AlGaN/GaN微波器件,采用等离子增强气相化学沉积的方法生长了250nm的Si3N4形成钝化层,直流特性从0.56A/mm上升到0.66A/mm,跨导从158mS/mm增为170mS/rmm,截止频率由10.7GHz增大到13.7GHz,同时在4GHz下,Vds=25V,Vgs=-2.5V,输出功率由0.90W增至1.79W,输出功率密度达到2.4W/mm.钝化有效地改善了器件的输出特性,减小和消除了表面寄生栅对器件的影响.     

C波段0.75mm AlGaN/GaN功率器件

研制并测试了以蓝宝石作衬底的10× 75μμm_0.8μm AlGaN/GaN微波器件,采用等离子增强气相化学沉积的方法生长了250nm的Si3N4形成钝化层,直流特性从0.56A/mm上升到0.66A/mm,跨导从158mS/mm增为170mS/rmm,截止频率由10.7GHz增大到13.7GHz,同时在4GHz下,Vds=25V,Vgs=-2.5V,输出功率由0.90W增至1.79W,输出功率密度达到2.4W/mm.钝化有效地改善了器件的输出特性,减小和消除了表面寄生栅对器件的影响.     

Polyimide passivated AlGaN-GaN HFETs with 7.65 W/mm at 18 GHz

Current metal-organic chemical vapor deposition-grown AlGaN-GaN heterojunction field-effect transistor devices suffer from threading dislocations and surface states that form traps, degrading RF performance. A passivation scheme utilizing a polyimide film as the passivating layer was developed to reduce the number of surface states and minimize RF dispersion. Continuous-wave power measurements were taken at 18 GHz on two-finger 0.23-/spl mu/m devices with 2/spl times/75 /spl mu/m total gate width before and after passivation yielding an increase from 2.14 W/mm to 4.02 W/mm in power density, and 12.5% to 24.47% in power added efficiency. Additionally, a 2/spl times/25 /spl mu/m device yielded a peak power density of 7.65 W/mm at 18 GHz. This data suggests that polyimide can be an effective passivation film for reducing surface states.     

10GHz 1W GaAs MESFET

<正> 一、引言自从1966年C. A. Mead提出肖特基场效应晶体管以来,GaAsMESFET作为一种微波器件受到广泛重视。短短十几年来已取得突飞猛进的发展。在4～20GHz的频率范围内,GaAs功率MESFET已被公认为是一种最好的微波功率器件。它具有结构简单、体积小、重量轻、功率大、效率高、线性好、频带宽等优点。在相控阵雷达、卫星和地面通信、电子对抗及卫星直播电视中得到广泛的运用,有着广阔的发展前景。     

4H-SiC MESFET器件工艺

介绍了制作4H-SiC MESFET器件的关键工艺.通过改进工艺,采用半绝缘衬底的国产SiC三层外延片,制造出总栅宽为1mm,2GHz连续波下输出功率大于4W,小信号增益大于10dB的SiC MESFET.     

4H-SiC MESFET器件工艺

介绍了制作4H-SiC MESFET器件的关键工艺.通过改进工艺,采用半绝缘衬底的国产SiC三层外延片,制造出总栅宽为1mm,2GHz连续波下输出功率大于4W,小信号增益大于10dB的SiC MESFET.