一种应用于时分交换IP OVER WDM网络的动态波长分配算法

提出了一种应用于时分交换IP OVER WDM网络的动态波长分配算法。该算法通过设置空闲波长信道,并将这些信道在不同时隙以跳波长方式动态分配给数据传输速率要求较高的业务,以尽量满足用户需求。讨论了该算法的原理,并对算法性能进行了分析。结果显示该算法能够有效地满足不同用户的业务需求,进一步提高信道波长利用率。     

一种应用于时分交换IP OVER WDM网络的动态波长分配算法

提出了一种应用于时分交换IP OVER WDM网络的动态波长分配算法。该算法通过设置空闲波长信道，并将这些信道在不同时隙以跳波长方式动态分配给数据传输速率要求较高的业务，以尽量满足用户需求。讨论了该算法的原理，并对算法性能进行了分析。结果显示该算法能够有效地满足不同用户的业务需求，进一步提高信道波长利用率。     

光突发交换网络中基于标记可抢占的调度算法

根据光突发交换(OBS)网络核心节点的结构和功能 特点,分析了OBS网络核心节点的数据信道 调度算法,提出了一种新的基于标记可抢占调度算法(LPSA),并讨论和分析了算法的实 现过程。本文算法根据到达核心节点的控制包所属业务等级的突发数据(OB)包占用的网络带 宽决定 数据信道调度的方法,实现了合理的使用数据信道和各业务类别间的业务区分,最终达到改 善OBS网络性能的目的。     

IEEE 802．16中基于信道状态的改进分组调度算法

为适应IEEE802．16无线网路的特点,降低数据的分组超时率,提高数据的平滑性,在基于信道状态的分组调度算法（CSDPS算法）的基础上,提出了一种基于信道状态的改进分组调度算法。该算法把业务区分与信道状态结合起来,既考虑了不同业务的QoS需求,也考虑了无线网络的信道特点。在降低发送速率上,给出降低速率的具体计算公式。通过理论分析,用改进算法与原有CSDPS算法进行了对比。可以发现,改进算法在分组超时率和数据平滑性上都有较大改善。     

一种适用于B3G移动通信系统下行共享信道的调度算法

本文针对后三代(B3G)移动通信系统中的宽带无线信道特性和流媒体业务特征,分析了可用于高速下行共享信道的各种传统分组调度算法,提出面向流媒体业务能够提高系统吞吐量的基于优先级公平调度(Priority-Based Fairness Scheduling,PBFS)算法.该算法根据各移动用户收发信道质量和业务传输的QoS要求动态调整各用户的业务传输优先级,确定下行共享信道的调度方案.并给出该算法的简化形式S-PBFS.仿真结果表明,与传统调度算法相比,S-PBFS算法在数据包传输时延受限的条件下具有无线信道利用率高、实现复杂度低等特点.     

提供区分服务的可抢占信道调度算法

在OBS网络LAUC-VF信道调度算法的基础上,提出了一种新的能够提供区分服务的可抢占武信道调度算法,它既保证了高优先级业务的低延迟传输,也使低优先级的业务能与高优先级业务共享信道资源,从而改善了OBS网络的QoS特性.     

多载波蜂窝移动通信系统中的多业务切换算法

提出一种用于多载波蜂窝移动通信系统的子信道合并切换算法。采用多维Markov链对子信道合并切换算法进行系统建模分析,得到了呼叫阻塞率、切换阻塞率等关键系统性能参数的解析结果。与切换保护信道算法相比,子信道合并切换算法在对其他类型呼叫性能影响很小的前提下,改善了对带宽要求较高的业务的切换性能。该算法还可以与其他资源预留切换算法相结合,改善其性能。     

CDMA无线系统中的寻呼信道负荷与短消息承载之间的关系探讨

从寻呼信道的负荷计算和短信业务在寻呼信道上发送机制两个方面来阐述信道负荷与短信业务发送之间的关系;并以石家庄系统为例计算寻呼信道负荷,分析了短消息在寻呼信道上的发送算法。     

基于约束最小二乘准则的信道矢量估计算法

提出了一种改进算法,该算法首先用子空间分解法估计出目标信号的导向矢量,并由此构造一个约束条件,然后用业务信号在约束最小二乘准则下估计信道矢量,导频仅用于信道矢量的初始估计,信道矢量的估计精度可以通过迭代过程逐步增加。理论分析与仿真结果表明,该算法使信道矢量的估计精度得到了明显提高。     

基于业务预测的时隙分配算法

多频-时分多址(MF-TDMA)卫星通信系统中信道资源十分宝贵,如何高效地分配和利用卫星通信系统信道资源,研究出一种可以降低卫星通信时延的算法很有必要。提出了一种MF-TDMA卫星通信系统中基于业务预测的时隙分配方法,通过终端缓存区域的队列长度和业务到达率来进行下一时刻的业务预测,中心站根据业务预测值来提前进行下一时刻信道资源的分配。仿真结果表明,通过基于业务预测的时隙分配算法可以有效降低传输时延,提高信道资源的利用率。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.