Effect of MnO2 Addition on the Electrical Properties of PNZST Ceramics

(Pb_0.99Nb_0.02)[(Zr_0.70Sn_0.30) _x Ti_1?x ]_0.98O₃ (PNZST) piezoelectric ceramics of pure perovskite structure were prepared by a conventional ceramic fabrication method, where x = 0.48–0.56. When x = 0.52, the ceramics exhibit a high piezoelectric coefficient (d ₃₃ ～ 490), but the mechanical quality factor (Q _m) is only 72. To increase the Q _m and not dramatically lower the d ₃₃, MnO₂ was chosen as the additive. The effects of adding MnO₂ on the sinterability, structure, and electrical properties of PNZST ceramics were investigated in detail. With a small addition of MnO₂ (≤0.6 wt.%), the Mn ions are homogeneously dissolved in the PNZST ceramic, leading to full densification when sintered at 1,300 °C. However, further addition of MnO₂ prevents densification, causing a high porosity and small grain size. The doping of MnO₂ transforms the phase structure from tetragonal to rhombohedral. The addition of MnO₂ up to a maximum of 0.6 wt.% remarkably improves the mechanical quality factor (Q _m) of PNZST ceramics, simultaneously as well as maintaining a high d ₃₃ and k _p. PNZST with 0.6 wt.% MnO₂ exhibits excellent electrical properties with piezoelectric coefficient d ₃₃ = 392 pC/N, electromechanical coupling factor k _p = 0.60, mechanical quality factor Q _m = 1,050, dielectric constant ε _r = 1,232, dielectric dissipation tanδ = 0.0058, and Curie temperature T _C = 300 °C.     

High‐Performance [001]c‐Textured PNN‐PZT Relaxor Ferroelectric Ceramics for Electromechanical Coupling Devices

[001]_C‐Textured 0.55Pb(Ni_1/3Nb_2/3)O₃–0.15PbZrO₃–0.3PbTiO₃ (PNN‐PZT) ceramics are prepared by the templated grain‐growth method using BaTiO₃ (BT) platelet templates. Samples with different template contents are fabricated and compared in terms of texture fraction, microstructure, and piezoelectric, ferroelectric and dielectric properties. High piezoelectric performance (d₃₃ = 1210 pC N^?1, d₃₃* = 1773 pm V^?1 at 5 kV cm^?1) and high figure of merit g₃₃?d₃₃ (21.92 × 10^?12 m² N^?1) are achieved in the [001]_C‐textured PNN‐PZT ceramic with 2 vol% BaTiO₃ template, for which the texture fraction is 82%. In addition, domain structures of textured PNN‐PZT ceramics are observed and analyzed, which provide clues to the origin of the giant piezoelectric and electromechanical coupling properties of PNN‐PZT ceramics.     

Piezoelectric and Dielectric Properties of Nonstoichiometric (Na0.5K0.5)0.97(Nb0.90Ta0.1)O3 Ceramics Doped with MnO2

MnO₂-added nonstoichiometric (K_0.5Na_0.5)_0.97(Nb_0.90Ta_0.1)O₃ lead-free piezoelectric ceramics were prepared by conventional sintering processes. X-ray diffraction data show that MnO₂ diffuses into the lattice of (K_0.5Na_0.5)_0.97 (Nb_0.90Ta_0.1)O₃ ceramics and forms a pure perovskite structure with orthorhombic symmetry. The microstructure of the samples showed that a certain amount of MnO₂ addition could improve the crystalline grain growth. The addition of a small amount of MnO₂ increased the mechanical quality factor (Q _m), piezoelectric constant (d ₃₃), and electromechanical coupling factor (k _p). At room temperature, (K_0.5Na_0.5)_0.97(Nb_0.90Ta_0.1)O₃ ceramics doped with 0.4?mol% MnO₂ showed piezoelectric properties suitable for low-loss piezoelectric actuator applications: k _p?=?0.43, Q _m?=?1212, d ₃₃?=?112?pC/N, and tan?δ?=?0.023.     

Domain Engineering of Lead‐Free Li‐Modified (K,Na)NbO3 Polycrystals with Highly Enhanced Piezoelectricity

Aging and re‐poling induced enhancement of piezoelectricity are found in (K,Na)NbO₃ (KNN)‐based lead‐free piezoelectric ceramics. For a compositionally optimized Li‐doped composition, its piezoelectric coefficient d₃₃ can be increased up to 324 pC N^?1 even from a considerably high value (190 pC N^?1) by means of a re‐poling treatment after room‐temperature aging. Such a high d₃₃ value is only reachable in KNN ceramics with complicated modifications using Ta and Sb dopants. High‐angle X‐ray diffraction analysis reveals apparent changes in the crystallographic orientations related to a 90° domain switching before and after the aging and re‐poling process. A possible mechanism considering both defect migration and rotation of spontaneous polarization explains the experimental results. The present study provides a general approach towards piezoelectric response enhancement in KNN‐based piezoelectric ceramics.     

Microstructure,Phase Transition,and Electrical Properties of K<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Na<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>NbO<Subscript>3</Subscript> Lead-Free Piezoceramics

The microstructure, phase transition, and electrical properties of lead-free K _x Na_1−x NbO₃ (x = 0.46 to 0.51, abbreviated as KNN) piezoceramics prepared by a conventional solid-state reaction method were investigated with an emphasis on the influence of the K/Na ratio. Scanning electron microscopy (SEM) images showed that the grain growth was slightly improved by increasing x. However, all ceramic samples possessed high densifications with fine grains from several hundred nanometers to several micrometers. X-ray diffraction (XRD) results showed that a discontinuous change of lattice parameters appeared between x = 0.49 and 0.50, which suggested a typical morphotropic phase boundary (MPB) separating two different orthorhombic phases O _I and O _II. The sample with composition x = 0.49 had the peak values of the piezoelectric constant d ₃₃ of 146 pC/N and the planar electromechanical coupling coefficient k _p of 43%. These results indicated that improving the piezoelectric properties in KNN ceramics could be achieved by optimizing the K/Na ratio.     

Enhancing Piezoelectric Performance of CaBi2Nb2O9 Ceramics Through Microstructure Control

Calcium bismuth niobate (CaBi₂Nb₂O₉, CBN) is a high-Curie-temperature (T _C) piezoelectric material with relatively poor piezoelectric performance. Attempts were made to enhance the piezoelectric and direct-current (DC) resistive properties of CBN ceramics by increasing their density and controlling their microstructural texture, which were achieved by combining the templated grain growth and hot pressing methods. The modified CBN ceramics with 97.5% relative density and 90.5% Lotgering factor had much higher piezoelectric constant (d ₃₃ = 20 pC/N) than those prepared by the normal sintering process (d ₃₃ = 6 pC/N). High-temperature alternating-current (AC) impedance spectroscopy of the CBN ceramics was measured by using an impedance/gain-phase analyzer. Their electrical resistivity was approximately 6.5 × 10⁴ Ω cm at 600°C. Therefore, CBN ceramics can be used for high-temperature piezoelectric applications.     

Microstructure and Electrical Properties of K0.5Na0.5NbO3-LiSbO3-BiFeO3-x %molZnO Lead-Free Piezoelectric Ceramics

Lead-free piezoelectric ceramics {0.996[(0.95(K_0.5Na_0.5)NbO₃-0.05LiSbO₃]-0.004BiFeO₃}-xmol%ZnO were prepared through a conventional ceramics sintering technique. The effect of ZnO content on structure, microstructure, and piezoelectric properties of KNN-LS-BF ceramics was investigated. The results reveal that ZnO as a sintering aid is very effective in promoting sinterability and electrical properties of the ceramics sintered at a low temperature of 1,020 °C. The ceramics show a single-perovskite structure with predominant tetragonal phase, and coexistence of orthorhombic and tetragonal phases is observed for x = 2.5–3.0. The addition of ZnO causes abnormal grain growth. A dense microstructure is also obtained at x = 2.0 because the relative density reaches up to 94.6 %. The morphotropic phase boundary and dense microstructure lead to significant enhancement of the piezoelectric properties. The ceramic with x = 1.5 exhibits optimum electrical properties as follows: d ₃₃ = 280 pC/N, k _p = 46 %, Q _m = 40.8, P _r = 25 μC/cm², E _c = 1.2 kV/mm, and T _c = 340 °C.     

Metal Particle Composite Hardening in Ba0.85Ca0.15Ti0.90Zr0.10O3 Piezoceramics

Hard-type piezoceramics are key materials in high-power transducers and transformers. Acceptor doping is the most widely used piezoelectric hardening approach, but the mobility of oxygen vacancies at large electric fields or at high temperatures inevitably leads to the deterioration of hardening performance. The present study proposes a new hardening method associated with intragranular metal particles for achieving strong pinning of ferroelectric domain walls. Highly effective piezoelectric hardening via intragranular Ag particles in Ba_0.85Ca_0.15Ti_0.90Zr_0.10O₃ ceramic is realized, where the mechanical quality factor Q_m and the coercive field E_c increase by 170% and 53%, respectively. The Ba_0.85Ca_0.15Ti_0.90Zr_0.10O₃/0.10Ag sample features a larger high-power mechanical quality factor than the pure Ba_0.85Ca_0.15Ti_0.90Zr_0.10O₃. Moreover, the piezoelectric properties (d₃₁ and k₃₁) of the Ba_0.85Ca_0.15Ti_0.90Zr_0.10O₃/0.10Ag sample show exceptional stability with the increase in vibration velocity. This composite approach of introducing metal particles can be considered as a generic hardening method and can be extended to other ferroelectric systems.     

Multilevel Structure Engineered Lead-Free Piezoceramics Enabling Breakthrough in Energy Harvesting Performance for Bioelectronics

The prevalence of wearable/implantable medical electronics together with the rapid development of the Internet of Medicine Things call for the advancement of biocompatible, reliable, and high-efficiency energy harvesters. However, most current harvesters are based on toxic lead-based piezoelectric materials, raising biological safety concerns. What hinders the application of lead-free piezoelectric energy harvesters (PEHs) is the low power output, where the key challenge lies in obtaining a high piezoelectric voltage constant (g₃₃) and harvesting figure of merit (d₃₃ × g₃₃). Here, micron pores are introduced into phased boundary engineered high-performance (K, Na)NbO₃-based ceramic matrix, resulting in the state-of-the-art g₃₃ and the highest d₃₃ × g₃₃ values of 57.3 × 10⁻³ Vm N⁻¹ and 20887 × 10⁻¹⁵ m² N⁻¹ in lead-free piezoceramics, respectively. Concomitantly, ultrahigh energy harvesting performances are obtained in porous ceramic PEHs, with output voltage and power density of 200 V and 11.6 mW cm⁻² under instantaneous force impact and an average charging rate of 14.1 µW under high-frequency (1 MHz) ultrasound excitation, far outperforming previously reported PEHs. Porous ceramic PEHs are further developed into wearable and bio-implantable devices for human motion sensing and percutaneous ultrasound power transmission, opening avenues for the design of next-generation eco-friendly WIMEs.     

Giant Piezoelectric Coefficients in Relaxor Piezoelectric Ceramic PNN‐PZT for Vibration Energy Harvesting

It is well known that the piezoelectric performance of ferroelectric Pb(Zr,Ti)O₃ (PZT) based ceramics is far inferior to that of ferroelectric single crystals due to ceramics' polycrystalline nature. Herein, it is reported that piezoelectric stress coefficient e₃₃ = 39.24 C m^?2 (induced electric displacement under applied strain) in the relaxor piezoelectric ceramic 0.55Pb(Ni_1/3Nb_2/3)O₃–0.135PbZrO₃–0.315PbTiO₃ (PNN‐PZT) prepared by the solid state reaction method exhibits the highest value among various reported ferroelectric ceramic and single crystal materials. In addition, its piezoelectric coefficient d₃₃* = 1753 pm V^?1 is also comparable with that of the commercial Pb(Mg_1/3Nb_2/3)O₃‐PbTiO₃ (PMN‐PT) piezoelectric single crystal. The PNN‐PZT ceramic is then assembled into a cymbal energy harvester. Notably, its maximum output current at the acceleration of 3.5 g is 2.5 mA_pp, which is four times of the PMN‐PT single crystal due to the large piezoelectric e₃₃ constants; while the maximum output power is 14.0 mW, which is almost the same as the PMN‐PT single crystal harvester. The theoretical analysis on force‐induced power output is also presented, which indicates PNN‐PZT ceramic has great potential for energy device application.     

Piezoelectric effect in GaAs nanowires

The anomalous piezoelectric effect in GaAs nanowires was detected (the piezoelectric module d ₃₃ ≈ 26 pC/N). This result can be explained by the dominant content of the phase with the wurtzite-type crystal structure in GaAs nanowires and an increased pressing force on the contact layer.     

Giant Piezoelectricity of Ternary Perovskite Ceramics at High Temperatures

Here, novel ferroelectric ceramics of (0.95 ? x)BiScO₃‐xPbTiO₃‐0.05Pb(Sn_1/3Nb_2/3)O₃ (BS‐xPT‐PSN) of complex perovskite structure are reported with compositions near the morphotropic phase boundary (MPB), and which exhibit a piezoelectric coefficient d₃₃ = 555 pC N^?1, a large‐signal coefficient $d_{33}^{?}$ ≈ 1200 pm V^?1 at room temperature, and a high Curie temperature T_C of 408 °C. More interestingly, this ternary system exhibits a giant and stable piezoelectric response at 200 °C with a large‐signal $d_{33}^{?}$ ≈ 2500 pm V^?1, matching that of the costly relaxor‐based piezoelectric single crystals at room temperature. The mechanisms of such giant piezoelectricity and its characteristic temperature dependence are attributed to the spontaneous polarization rotation and extension under an electric field and the MPB‐related phase transition. The findings reveal that the BS‐xPT‐PSN ceramics constitute a new family of high‐performance piezoelectric materials suitable for electromechanical transducers that can be operated at high temperatures (at 200 °C, or higher).     

MnO2-Modified Ba(Ti,Zr)O3 Ceramics with High Q m and Good Thermal Stability

MnO₂-modified Ba(Ti_0.9625Zr_0.0375)O₃ ceramics have been prepared by the conventional solid-state reaction technique at different sintering temperatures. Room-temperature piezoelectric properties, thermal stability, and crystalline structures were investigated. It was found that both the MnO₂ additive and sintering temperature significantly influence the piezoelectric properties of the MnO₂-modified Ba(Ti_0.9625Zr_0.0375)O₃ ceramics. The sample sintered at 1400°C exhibited the best room-temperature piezoelectric properties of Q _m = 1907, d ₃₃ = 205 pC/N, and k _p = 40.5% with tan δ = 0.46%, and its k _p remains larger than 35% in the broad temperature range from ?38°C to 65°C. The results indicate that MnO₂-modified Ba(Ti_0.9625Zr_0.0375)O₃ ceramics are promising lead-free materials for frequency device and power device applications.     

Solid-state synthesis of modified (Bi0.5Na0.5)TiO3 piezoelectric nanocrystalline ceramics and evaluating their properties

The piezoelectric nanocrystalline ceramics of (Bi_0.5Na_0.5) TiO₃, 0.94(Bi_0.5Na_0.5) TiO₃–0.06BaTiO₃, 0.82(Bi_0.5Na_0.5) TiO₃–0.18(Bi_0.5K_0.5) TiO₃ and 0.85(Bi_0.5Na_0.5) TiO₃–0.144(Bi_0.5K_0.5)TiO₃–0.006BaTiO₃ (abbreviated as BNT, BNBT6, BNKT18 and BNT–BT–BKT, respectively) have been synthesized by a modified solid state approach using high-energy planetary ball-milling. The crystal structures of ceramics were determined using X-ray diffraction (XRD) method and that the microstructures as well as the morphology of the sintered ceramic specimens were observed using scanning-electron microscopy (SEM). The dielectric coefficient was also calculated based on its relation with a constant capacitance measured by an electrical circuit on the basis of the Wetston–Bridge and the piezoelectric coefficient (d₃₃) measured with a d₃₃-meter. On the calcination of powders the XRD results showed that the perovskite phase was formed perfectly and the crystallite sizes of BNT, BNBT6, BNKT18 and BNT–BT–BKT were estimated at about >100, 55, 36 and 63 nm, respectively. Also, the crystallite sizes of the calcinated BNT powders over the course of 5, 10, 20, 30 and 40 h of ball-milling were estimated at about 86, 82, 72, 53, 81 nm, respectively. Moreover, the results of XRD and SEM analysis of the sintered powders at 750–1150 °C confirmed the positive effect of nanocrystalline formation during ball-milling in decreasing the sintering temperature and increasing the density of the sintered samples. Furthermore, electrical calculations such as dielectric and piezoelectric coefficients showed that the modified BNKT18 nanocrystalline ceramic sintered at 1150 °C was to have the best values of dielectric (ε_r=792 at 1 kHz) and piezoelectric coefficients (d₃₃=85.9 pC/N) in comparison with the other synthesized piezoelectric ceramics.     

Fabrication and characterization of PZT-PMWSN thin film using pulsed laser deposition

Thin PZT films are being developed for use in sensor and actuator application in micromechanical systems. For the use as sensor and actuator, it is desirable to combine high mechanical quality factor (Q_m) with high piezoelectric constant (d) and high electro-mechanical coupling factor (k_p). We fabricated PbZr_xTi_1−xO₃-Pb(Mn,W,Sb,Nb)O₃ (PZT-PMWSN) targets with variations in the Zr/Ti ratio. The dielectric and piezoelectric properties of PZT-PMWSN ceramics were investigated as a function of Zr/Ti ratio. At the Zr/Ti ratio of 0.52/0.48, the electrical coupling factor (k_p) and the mechanical quality factor (Q_m) showed a maximum value of 0.56 and 2344, respectively. The PZT-PMWSN thin film has been prepared on a Pt/Ti/SiO₂/Si substrate using pulsed laser deposition method. The structural property was characterized with XRD, SEM and ferroelectric hysteresis loop measurement were used to characterize the electrical properties of PZT-PMWSN thin film.     

K4CuNb8O23对K0.5Na0.5NbO3-Bi0.5Na0.5TiO3-LiSbO3压电陶瓷结构及性能的影响

采用固相反应法制备了0.96(0.99K0.5Na0.5.5NbO3-0.01Bi0.5Na0.5TiO3)-0.04¨SbO3-xK4CuNb8O23(0≤x≤3.00％)(简称KNN-BNT-LS-KCN)无铅压电陶瓷,研究了其晶体结构、压电、介电以及铁电性质。结果表明,KCN的加入使所制陶瓷的晶体结构从四方相转变...     

新型无铅压电陶瓷BNKT-BiFeO_3的研究

采用传统陶瓷制备法制备了一种新型无铅压电陶瓷(1-x)Bi_(0.5)(Na_(0.82)K_(0.18))_(0.5)TiO_3-xBiFeO_3(BNKT-BFx).研究了Bi基铁电体BiFeO_3对BNKT-BFx陶瓷晶体结构、显微组织和压电性能的影响.结果表明,在所研究的组成范围内陶瓷材料均能形成纯钙钛矿固溶体,陶瓷的准同型相界位于x=0～0.05.BiFe_O3促进陶瓷致密化和晶粒生长,在准同型相界成分附近压电性能达到最大值:d_(33)=171 pC/N,k_p=0.366.     

基于高压电性PMNT陶瓷的无损检测高频超声换能器

Sm掺杂Pb(Mg_1/3Nb_2/3)O₃0.30PbTiO₃(PMN0.30PT)陶瓷具有与PMN0.30PT单晶相当的超高压电响应(d33约为1 300 pC/N),但比压电单晶具有更高的一致性和更低的成本。该文针对高频超声无损检测的工业化应用,基于Sm掺杂PMN0.30PT陶瓷设计并制作了中心频率大于30.5 MHz的高频超声换能器,利用超声脉冲回波法进行了换能器的性能表征,并测试了其声场。针对小型塑料零部件的微结构,利用所制备的高频超声换能器进行了超声成像。结果表明,基于Sm掺杂PMN0.30PT陶瓷的高频超声换能器具有优异的成像性能,适合于高频超声无损检测成像的工业化制备。     

The preparation of piezoelectric ceramics withk p value of 15%

PbNb₂O₆ PbCrO₄ PZT piezoelectric ceramics with low radial coupling coefficient has been developed. Its chemical equation is given. This kind of ceramics is characterized byk _p =0.15,Q _M =5000,f/f _r =6×10⁻⁶. It has been used successfully to make low-frequency narrow-band ceramic filter.     

Investigation of Structural and Electrical Properties of B-Site Complex Ion (Mg1/3Nb2/3)4+-Modified High-Curie-Temperature BiFeO3-BaTiO3 Ceramics

B-site complex ion (Mg_1/3Nb_2/3)-modified high-temperature ceramics 0.71BiFeO₃-0.29BaTi_1?x (Mg_1/3Nb_2/3) _x O₃ (BF-BTMNx) have been fabricated by the conventional solid-state reaction method. The compositional dependence of the?phase structure, electrical properties, and depolarization temperature of the ceramics was studied. The main phase structure of BF-BTMNx ceramics is perovskite phase with pseudocubic symmetry. The experimental results show that the dielectric and piezoelectric properties, and temperature stability strongly depend on the (Mg_1/3Nb_2/3)⁴⁺ content. The optimum (Mg_1/3Nb_2/3) content enhances the piezoelectric properties, Curie temperature, and depolarization temperature. The ceramic with x = 1% exhibited enhanced electrical properties of d ₃₃ = 158 pC/N and k _p = 0.322, combined with high-temperature stability with Curie temperature of T _c = 453°C and depolarization temperature of T _d = 400°C. These results show that the ceramic with x = 1% is a promising lead-free high-temperature piezoelectric material.