新型结构的单片单刀双掷开关

新型结构的单片单刀双掷开关顾　蕾，林毅，张顺忠，林立强，卢永宁（南京电子器件研究所，２１００１６）ＭＭＩＣＳＰＤＴｗｉｔｈＮｅｗＳｔｒｕｃｔｕｒｅ￥ＧｕＳｈｉｌｅｉ；ＬｉｎＹｉ；ＺｈａｎｇＳｈｕｎｚｈｏｎｇ；ＬｉｎＬｉｑｉａｎｇ；ＬｕＹｏｎｇｎｉｎｇ...     

一种新颖的鳍线单刀双掷开关

介绍一种只需要一个偏置控制端口,采用正负脉冲驱动的T形结鳍线单刀双掷开关的设计方法。在电路中采取改进措施,提高了隔离度、降低了插入损耗,测量结果表明,开关在Ka频段内,插入损耗≤1.5dB,隔离度≥30dB;在W频段内,插入损耗≤2dB,隔离度≥25dB。     

一种单刀双掷高速模拟开关的研制

介绍了一种单刀双掷高速模拟开关;描述了电路工作原理、线路设计、版图设计及可靠性设计。该高速模拟开关具有速度快、功耗低、隔离度高、关断漏电流小等特点。其内部电路设计有控制输入级、电平转换级、高速模拟开关管及静电保护电路。该电路可广泛应用于雷达接收机和发射机、通信系统和数据采集系统,以及通用模拟开关等领域。     

一种X波段GaAs单片单刀双掷开关

采用0.2μmGaAsPHEMT工艺设计了一种X波段单刀双掷开关单片集成电路。在片测试结果为8～11GHz范围内,隔离度>30dB,在中心频率9.5GHz能够达到45dB,插损<1.2dB。芯片结构非常简单紧凑,仅用了两个并联的PHEMT管。     

带有直流偏置的毫米波单刀双掷开关仿真与设计

采用阶跃阻抗传输线和扇形微带短截线,实现了单刀双掷开关的直流偏置,使直流支路与毫米波支路之间的隔离度大于30dB,带宽超过25%,在中心频率30GHz附近回波损耗大于40dB。采用这种直流偏置电路和PIN梁式引线二极管,基于LTCC工艺对单刀双掷开关串联结构进行仿真。设计结果表明在28.5～31.5GHz频率范围内,串联开关的插入损耗小于1.5dB,回波损耗大于15dB,隔离度大于20dB。     

基于SiGe BiCMOS工艺的90~100 GHz单刀双掷开关

采用0.13 μm SiGe BiCMOS工艺,设计了一种频带为90~100 GHz的差分单刀双掷开关。首先对比分析了并联MOS管与串联MOS管,根据隔离度与损耗性能选择了并联结构。其次采用差分螺旋电感进行匹配,将双端口电感网络等效为变压器模型,显著抑制了共模信号。采用平面三维电磁仿真软件进行联合仿真。结果表明,在中心频点处,差模插入损耗为-4.1 dB,共模插入损耗为-7.4 dB,隔离度大于-22 dB,输入反射系数S₁₁<-12 dB,输出反射系数S₂₂<-10 dB。芯片尺寸为570 μm×140 μm。     

X-波段MEMS单刀双掷开关的研究

利用X-波段MEMS单刀单掷膜开关和成熟的微带线技术设计了一种X-波段MEMS单刀双掷膜开关,其模拟结果为;阈值电压为19V左右,工作频率为8～12GHz,在中心频率（10GHz）处,导通开关的插入损耗为-0．2dB,截止开关的隔离度为-21dB,开关的回波损耗为-43dB。     

毫米波单刀双掷开关的设计与制作

以0.25μm GaAs PHEMT为基础,介绍了微波单片集成电路开关模型的设计、测试及建模过程,并以此平台开展了单刀双掷开关芯片的设计与研制.讨论了PHEMT开关建模的重要性,解决了建模中的关键问题,包括开关的设计、测试系统的校准、模型参数的提取,建立了毫米波范围内高精度的等效电路模型.单刀双掷开关的设计采用了并联式反射型电路拓扑,开关的测试采用了微波探针在片测试系统,在18～30 GHz获得了优异的电性能,插入损耗IL≤1.5 dB,输入/输出驻波比VSWR≤1.5:1,关断状态下的隔离度ISO≥30 dB,芯片尺寸为1.2 m/mm×1.8 mm×0.1 mm.     

GaAs PIN二极管大功率毫米波单刀双掷开关单片

采用76.2mm(3英寸)GaAs PIN二极管工艺设计和制作了大功率毫米波单刀双掷开关单片。采用并联结构的单刀双掷开关以获得较高的功率特性。在片测试表明,在30～36GHz工作频段,开关导通支路插损1.0dB,驻波优于1.5,开关关断端口隔离度大于34dB。开关在导通态下输入功率0.5dB压缩点P-0.5 dB大于5W。     

Compact microstrip lowpass filter

A novel compact microstrip lowpass filter using the slow-wave resonator is described. This filter has the advantages of low insertion loss in the passband, high and wide rejection in the stopband and compact size. A demonstration filter is designed, fabricated and tested. Theoretical and experimental results are presented.     

CMOS VHF transconductance-C lowpass filter

Experimental results of a VHF CMOS transconductance-C lowpass filter are described. The filter is built with transconductors as published earlier. The cutoff frequency can be tuned from 22 to 98 MHz and the measured filter response is very close to the ideal response.<>     

Switched-capacitor lowpass filter without active components

A method for the synthesis of lowpass filters by means of only capacitors and m.o.s. switches, i.e. without active components, is described.     

Improved performance step impedance lowpass filter

Performances of the conventional Butterworth step impedance lowpass filters (LPF) are significantly improved by placing transmission zero either closer to the cut-off frequency (f_c) or away from it. It is achieved by using transverse resonance width of the capacitive line sections. We report method of designing transverse resonance type LPF (TR-LPF) for 5 to 11-pole filters. At f_c = 2.5 GHz, we obtained selectivity in the range 113.3–56.66 dB/GHz and 20–60 dB rejection BW in the range 9.61–7.29 GHz. The TR-LPF can suppress the stopband signal by 60 dB up to 5f_c. Insertion loss in passband is within 0.72 dB. Improved performance of TR-LPF can be designed for f_c up to 7.5 GHz.     

CFA based fully integrated nth-order lowpass filter

A general synthesis procedure for the realisation of an nth-order lowpass voltage transfer function by a fully integrated circuit is presented, and a CFA based fully integrated nth-order filter which uses (n) CFA based integrators and only grounded capacitors is given. This circuit is especially suitable for monolithic implementation     

能扩展微机输出端口的RC低通滤波器

几乎是摩尔定律的必然结果: 明年,微机将具有更多功能,软件开发团队也会有更宏大的构想.可惜,输出针脚的数量并未增加.找到一个多余输出端口用于诊断、测试或标准I/O都是很困难的.图1中的单一针脚"总线"以简单的附加硬件可提供无数的并行输出.带有RC低通滤波器的微机输出,控制串/并转换器HC164.     

Ku-band high-power lowpass filter with spurious rejection

A Ku-band high-power lowpass filter with spurious passband suppression up to 40 GHz is proposed in rectangular waveguide technology. The new design consists of a conventional E-plane corrugated lowpass filter cascaded with a quasi-periodic structure tuned to reject the undesired spurious passbands. This new design technique allows the minimum gap of the original corrugated filter to be kept wide enough to permit high-power operation     

Computer tuning of hybrid audio oscillators

A hybrid tantalum thin-film and beam-lead silicon device will be incorporated in the Bell System's Touch-Tone telephones of the future. This RC multifrequency audio oscillator will replace the LC device presently used in the Touch-Tone keyboards. The tuning process for the RC device requires that the tantalum thin-film resistors be custom adjusted to calculated values; and a tuning system driven by a small process-control computer has been designed to fulfill this function.     

Microstrip lowpass filter with multislots on ground plane

A microstrip line structure with backside transverse multislots is proposed for a microwave lowpass filter. The developed equivalent CAD model, based on network analysis, is used effectively to design a multistage microstrip lowpass filter. Numerical simulation and measurement confirm the validity of the proposed lowpass filter configuration and the efficient analysis and design procedure