Microstructures and microwave dielectric properties of (1 − y)Nd1−xYbx(Mg0.5Sn0.5)O3–yCa0.8Sr0.2TiO3 ceramics

The (1 ? y)Nd_1?xYb_x(Mg_0.5Sn_0.5)O₃–yCa_0.8Sr_0.2TiO₃ ceramics were prepared by the conventional solid-state method. The X-ray diffraction patterns of the Nd_1?xYb_x(Mg_0.5Sn_0.5)O₃ ceramics revealed that Nd_1?xYb_x(Mg_0.5Sn_0.5)O₃ is the main crystalline phase, which is accompanied by a little Nd₂Sn₂O₇ as the second phase. An apparent density of 6.87 g/cm³, a dielectric constant (? _r ) of 19.48, a quality factor (Q × f) of 117,300 GHz, and a temperature coefficient of resonant frequency (τ _f ) of ?61 ppm/°C were obtained when the Nd_0.96Yb_0.04(Mg_0.5Sn_0.5)O₃ ceramics were sintered at 1,600 °C for 4 h. The temperature coefficient of resonant frequency (τ _f ) increased from ?61 to ?3 ppm/°C as y increased from 0 to 0.6 when the (1 ? y)Nd_0.96Yb_0.04(Mg_0.5Sn_0.5)O₃–yCa_0.8Sr_0.2TiO₃ ceramics were sintered at 1,600 °C for 4 h. 0.4Nd_0.96Yb_0.04(Mg_0.5Sn_0.5)O₃–0.6Ca_0.8Sr_0.2TiO₃ ceramic that was sintered at 1,600 °C for 4 h had a τ _f of ?3 ppm/°C.     

Microstructure and microwave dielectric properties of xSm(Mg0.5Ti0.5)O3–(1 − x)Ca0.8Sr0.2TiO3 ceramics

xSm(Mg_0.5Ti_0.5)O₃–(1 ? x)Ca_0.8Sr_0.2TiO₃ (x = 0.50–0.95) ceramics are prepared by a conventional solid-state ceramic route. The microstructure and microwave dielectric properties are investigated as a function of the x-value and sintering temperature. The single phase solid solutions were obtained throughout the studied compositional range. The variation of bulk density and dielectric properties are related with the x-value. Increasing sintering temperature can effectively promote the densification and dielectric properties of xSm(Mg_0.5Ti_0.5)O₃–(1 ? x)Ca_0.8Sr_0.2TiO₃ ceramic system. With the content of Sm(Mg_0.5Ti_0.5)O₃ increasing, the temperature coefficient of resonant frequency τ _f value decreased, and a near-zero τ _f could be obtained for the samples with x = 0.80. The optimal microwave dielectric properties with a dielectric constant ε _r of 30.1, Q × f of 115,000 GHz (at 8.0 GHz), and τ _f of 8.9 ppm/°C were obtained for 0.80Sm(Mg_0.5Ti_0.5)O₃–0.20Ca_0.8Sr_0.2TiO₃ sintered at 1,550 °C for 3 h, which showed high density and well-developed grain growth.     

Microwave dielectric properties of (1 − y)Nd(1−2x/3)Bax(Mg0.5Sn0.5)O3–yCa0.8Sr0.2TiO3 ceramic

The (1 ? y)Nd_(1?2x/3)Ba_x(Mg_0.5Sn_0.5)O₃–yCa_0.8Sr_0.2TiO₃ ceramics were prepared by the conventional solid-state method. The X-ray diffraction patterns of the Nd_(1?2x/3)Ba_x(Mg_0.5Sn_0.5)O₃ ceramics revealed that Nd_(1?2x/3)Ba_x(Mg_0.5Sn_0.5)O₃ is the main crystalline phase, which is accompanied by a little Nd₂Sn₂O₇ as the second phase. An apparent density of 6.89 g/cm³, a dielectric constant (ε _r ) of 19.1, a quality factor (Q × f) of 212,000 GHz, and a temperature coefficient of resonant frequency (τ _f ) of ?68 ppm/°C were obtained when the Nd_2.94/3Ba_0.03(Mg_0.5Sn_0.5)O₃ ceramics were sintered at 1,550 °C for 4 h. The temperature coefficient of resonant frequency (τ _f ) increased from ?68 to +55 ppm/°C as y increased from 0 to 0.7 when the (1 ? y)Nd_2.94/3Ba_0.03(Mg_0.5Sn_0.5)O₃–yCa_0.8Sr_0.2TiO₃ ceramics were sintered at 1,600 °C for 4 h. 0.4Nd_2.94/3Ba_0.03(Mg_0.5Sn_0.5)O₃–0.6 Ca_0.8Sr_0.2TiO₃ ceramic that was sintered at 1,600 °C for 4 h had a τ _f of ?7 ppm/°C.     

Orientation-dependent microwave dielectric properties of Ba0.6Sr0.4TiO3 thin films prepared by sol–gel method

Barium strontium titanate (Ba_0.6Sr_0.4TiO₃, BST) thin films have been prepared on the (100) LaAlO₃ single-crystal substrates by sol–gel technique. The X-ray diffraction study indicated that the thin films exhibited (100) preferred orientation and random orientation depending upon the concentration of precursor solution. The nonlinear dielectric properties of the BST films were measured using an interdigital capacitor. The temperature dependence of dielectric constant of the BST thin films was measured at 1 MHz in the temperature range from ?100 to 80 °C. The Curie temperature T _c of the films derived from 0.1, 0.2 and 0.3 M was found to be ?18.5, ?32.5 and ?39.9 °C, respectively. The tunability of BST films with the (100) preferred orientation was 30.74 %, which was much higher than that of thin films with random orientation at the frequency of 10 kHz with an applied electric field of 80 kV/cm. The microwave dielectric properties of the BST thin films were measured by a vector network analyser from 1 to 10 GHz.     

Microwave dielectric properties of (Ca0.8Sr0.2)(SnxTi1−x)O3 ceramics

In this paper, we study the behavior of the B-site behavior with the incorporation of Sn⁴⁺ ion in (Ca_0.8Sr_0.2)TiO₃ ceramics. An excess of Sn⁴⁺ resulted in the formation of a secondary phase of CaSnO₃ and SrSnO₃ affecting the microwave dielectric properties of the (Ca_0.8Sr_0.2)(Sn_xTi_1?x)O₃ ceramics. The dielectric properties of the (Ca_0.8Sr_0.2)(Sn_xTi_1?x)O₃ ceramics were improved because of the solid solution of Sn⁴⁺ substitution in the B-site. The temperature coefficient of resonant frequency (τ_f) of the (Ca_0.8Sr_0.2)(Sn_xTi_1?x)O₃ ceramics also improved with increasing Sn content.     

Improvement in microwave dielectric properties of La(Mg0.5Sn0.5)O3 ceramics by applying ZnO–B2O3–SiO2

The microwave dielectric properties of ZnO–B₂O₃–SiO₂ (ZBS)-doped La(Mg_0.5Sn_0.5)O₃ ceramics were investigated with a view to their application in microwave devices. ZBS-doped La(Mg_0.5Sn_0.5)O₃ ceramics were prepared by the conventional solid-state method. The X-ray diffraction patterns of ZBS-doped La(Mg_0.5Sn_0.5)O₃ ceramics exhibited no significant variation of phase with sintering temperature. By adding 2.0 wt% ZBS, a dielectric constant of 19.14, a quality factor (Q × f) of 35,800 GHz, and a temperature coefficient of resonant frequency τ _f (?86 ppm/°C) were obtained when La(Mg_0.5Sn_0.5)O₃ ceramics were sintered at 1,400 °C for 4 h.     

低温烧结Ca0.6La0.8/3TiO3-Li0.5Nd0.5TiO3微波介质陶瓷

研究了复合烧结助剂ZnO-B2O3-SiO2(ZBS)玻璃和LiF添加量对Ca0.6La0.8/3TiO3-Li0.5Nd0.5 TiO3(CLLNT)陶瓷相结构、烧结特性及介电性能的影响.加入复合烧结助剂(ZBS玻璃和LiF)后,CLLNT陶瓷的烧结温度从1400℃降至1000℃;当ZBS玻璃的添加量为4%(质量分数,下同)、LiF的添加量小于3%时,CLLNT陶瓷样品中没有发现第二相,主晶相仍为斜方钙钛矿结构;当ZBS玻璃的添加量为4%、LiF的添加量为1%时,CLLNT陶瓷在1000℃烧结3h获得最佳性能,介电常数εr=97,Q×f=1286GHz,TCF=43×10-6/℃(4GHz).     

Microstructures and electrical properties of Sr0.6Bi0.4Fe0.6Sn0.4O3–BaCoII 0.02CoIII 0.04Bi0.94O3 thick-film thermistors with low room-temperature resistivity

The thick film NTC thermistor of compositions Sr_0.6Bi_0.4Fe_0.6Sn_0.4O₃ + BaCo^II _0.02Co^III _0.04Bi_0.94O₃, synthesized by solid state reaction, were prepared by screen-printing on alumina substrate. The microstructures, composition dependent, impedance characteristics, self-heating behaviours and thermistor properties were investigated. The relation between logarithm of resistivity and reciprocal of absolute temperature for the thick film thermistor was almost linear for all the compositions studied. The room-temperature resistivity, thermistor constant and activation energy of the films decreased with increasing BaCo^II _0.02Co^III _0.04Bi_0.94O₃ content and were in the range of 18.2–945.7 Ω cm, 1,753–2,649 K and 0.151–0.228 eV, respectively. The thick films showed the nearest-neighbor hopping or variable-range hopping model depended on the compositions. Impedance analysis indicated that the resistivity value of the thick films was mainly ascribed to the contribution of grains. At higher BaCo^II _0.02Co^III _0.04Bi_0.94O₃ content, a good self-heating effect of one thermistor film was observed.     

Microwave dielectric properties and microstructures of Nd(Mg0.5?xCoxSn0.5)O3 ceramics

This study elucidates the microwave dielectric properties and microstructures of Nd(Mg_0.5?xCo_xSn_0.5)O₃ ceramics with a view to their potential for microwave devices. The Nd(Mg_0.5?xCo_xSn_0.5)O₃ ceramics were prepared by the conventional solid-state method with various sintering temperatures. The X-ray diffraction patterns of the Nd(Mg_0.45Co_0.05Sn_0.5)O₃ ceramics revealed no significant variation of phase with sintering temperatures. A dielectric constant (? _r ) of 19.2, a quality factor (Q?×?f) of 68,900?GHz, and a temperature coefficient of resonant frequency (τ _f ) of ?67?ppm/°C were obtained for Nd(Mg_0.45Co_0.05Sn_0.5)O₃ ceramics that were sintered at 1,550?°C for 4?h.     

Microstructures and dielectric tunable properties of Ba0.5Sr0.5TiO3–MgO–Mg2TiO4 composite ceramics

Ba_0.5Sr_0.5TiO₃–MgO–Mg₂TiO₄ composite ceramics were prepared by a solid-state reaction method, and the dielectric tunable properties were investigated. It is observed that the addition of MgO–Mg₂TiO₄ into the Ba_0.5Sr_0.5TiO₃ forms ferroelectric (Ba_0.5Sr_0.5TiO₃)–dielectric (Mg₂TiO₄–MgO) composites. Increasing Mg₂TiO₄ content causes an increase of Curie temperature T_c towards room temperature and a decrease of dielectric constant peak ε_max. The dielectric constant and loss tangent of Ba_0.5Sr_0.5TiO₃–MgO–Mg₂TiO₄ composites have been reduced and the overall tunability is maintained at a sufficiently high level. With the increase of Mg₂TiO₄ content and the decrease of MgO content, the dielectric constant and tunability of Ba_0.5Sr_0.5TiO₃–MgO–Mg₂TiO₄ composite ceramics increase and the Q × f values decrease. Ba_0.5Sr_0.5TiO₃–Mg₂TiO₄–MgO composites have dielectric constant of 123.0–156.5 and tunability of 14.4–28.5 % at 10 kHz under 3.9 kV/mm, indicating that they are promising candidate materials for tunable microwave applications requiring a low dielectric constant.     

Densification of La0.6Sr0.4Co0.2Fe0.8O3 ceramic by flash sintering at temperature less than 100 °C

The effect of DC electric field on sintering and electrical conductivity of La_0.6Sr_0.4Co_0.2Fe_0.8O₃ (LSCF), considered as highly promising cathode material for solid oxide fuel cell, is investigated in the present work. It is shown that sintering can be carried out at (furnace) temperature <100 °C under electric field ranging from 7.5 to 12.5 V/cm; such extraordinary effect is associated with the high electrical conductivity of LSCF through a peculiar mechanism. Microstructural analysis suggests similar morphology and enhanced grain growth compared to traditional sintering; with the proper choice of processing parameters (electric field and current density) during flash sintering, homogeneous porous microstructure for cathodic application can be obtained in very short time. The role of electric field and specimen temperature in flash sintering is analyzed for the understanding of observed outstanding event. The conductivity is found to be a coupled response of electric field and temperature; 2–3 V/cm and 15–25 °C are sufficient for dense LSCF specimen to stimulate the electric field effect on sintering. Electric field controls the conductivity in the same way as temperature does suggesting that under flash effect conductivity is increased by usual mechanism. On the same basis, flash sintering is proposed to be accelerated by the “polaron hopping” phenomenon.     

Effect of sintering temperature on phase structure, microstructure, and electrical properties of (K0.5Na0.5)NbO3–(Ba0.6Sr0.4)0.7Bi0.2TiO3 lead-free ceramics

Lead-free 0.98(K_0.5Na_0.5)NbO₃–0.02(Ba_0.6Sr_0.4)_0.7Bi_0.2TiO₃ (abbreviated as 0.98KNN–0.02BSBT) ceramics were prepared by the conventional solid-state sintering method. Effect of sintering temperature on 0.98KNN–0.02BSBT ceramics was systematically investigated. The frequency dependent dielectric permittivities show that the ceramics sintered at different temperatures are indeed “relaxor-like” ferroelectric ceramics, which possess a diffuse phase transition without a strong frequency dispersion of dielectric permittivity. The diffuseness parameter γ, the comparison of the relaxor behavior based on empirical parameters (ΔT _diffuse) and the slimmer P–E hysteresis loops confirm that the “relaxor-like” characteristics of the ceramics are strengthened with increasing sintering temperature. At the optimum sintering temperature, the dielectric permittivity maximum (? _max) has a value of approximately 2795 (at 1 KHz), $ \tan \delta $ is lower than 2.5 % and the diffuseness parameter γ = 1.68 at a broad usage temperature range (150–350 °C), which indicate its potential application in high temperature multilayer ceramics capacitor field.     

Dielectric property of Ba0.6Sr0.4TiO3–Mg0.9Zn0.1O ceramic with additives of Sm2O3 and Ta2O5

Influence of Sm₂O₃ and Ta₂O₅ additions on the dielectric property of Ba_0.6Sr_0.4TiO₃–Mg_0.9Zn_0.1O (BST–MZO) ceramic composite was investigated. The XRD results indicate that the main phases in the Sm₂O₃ and Ta₂O₅ doped samples are BST and MZO. Loss tangent of BST–MZO ceramic becomes higher with additive of Sm₂O₃. Optimum doping amount of Ta₂O₅ can reduce loss tangent of BST–MZO ceramic which can also ensure the moderate dielectric constant and usable tunability. When the amount of Ta₂O₅ is 1.0 wt%, the dielectric constant, loss tangent and tunability are 84.85, 0.0005 (at 1 MHZ) and 15% (under electric field 7 kv/mm), respectively. At microwave frequency (4.025 GHz), the dielectric constant decreases to 81.03 while loss tangent increases to 0.0049. The ceramic with additive of 1.0 wt% Ta₂O₅ has the optimal FOM value (about 261) and should be a promising candidate for phase shifter application.     

多孔 La0.6Sr0.4Co0.2Fe0.8O3-的制备及表征

多孔La0.6Sr0.4Co0.2Fe0.8O3-陶瓷具有一定的强度、良好的透气和电传导性能,可用于中温SOFC阴极支撑体和氧分离膜活性支撑体. 本文用固相反应法制备了多孔La0.6Sr0.4Co0.2Fe0.8O3-陶瓷. 考察了烧结条件、成型压力和有机添加剂量对孔隙率和孔径的影响. 研究发现气体渗透率随孔隙率线性增长,电导率随孔隙率的增大而下降,并满足关系式=0(1-P)3.1.     

Syntheses and dielectric properties of perovskite ceramic system PFW0.8−x·PMN0.2·PFNx

(Fe system perovskite powders (phase purity >99%) were prepared via B-site precursor routes. Lattice parameter changes were analyzed in terms of B-site cation stoichiometries and sizes. Weak-field radio-frequency dielectric characteristics were investigated to verify the effect of composition modification on Curie temperatures and maximum dielectric constants. Unusual relaxation behaviors of frequency dispersion in the dielectric constant spectra at paraelectric region were observed.