片式有机薄膜电容器

随着表面组装技术的迅速发展,对片式有机薄膜电容器的要求越来越高,例如,要求它进一步提高耐焊接热,更加微型化和降低价格。因此,国外不少厂家正积极研制片式有机薄膜电容器。     

片式电容器产品与市场

片式电容器产品与市场当今，通信、计算机和汽车工业已成为接纳片式电容器的大市场。片式电容器已由最初的陶瓷电容器发展到今天的钽电解电容器、铝电解电容器、有机薄膜电容器、云母电容器和微调电容器。目前应用最广泛的仍是多层片式陶瓷电容器和片式钽电解电容器。日本...     

片式电容器的市场现状和发展

小型化趋势和高性能微处理器的不断问世也促使片式电容器向表面安装型和小型化发展。片式电容器的市场现已逐渐扩大到通信、计算机、汽车工业等领域。片式电容器也由最初的陶瓷电容器发展到今天的钽电解电容器、铝电解电容器、有机薄膜电容器、云母电容器和微调电容器。     

耐温叠片结构薄膜片式电容器

为了适应表面装配技术发展的需要,日本松下电器株式会社研制出了一种新型薄膜片式电容器。本文将介绍这种片式电容器的结构、生产工艺及其电性能。     

片式薄膜电容切片工艺及设备研究

在多种电子元器件中,电容器是使用面最广和用量最大的电子元件。片式薄膜电容器是由薄膜电容条切割而成,切片工艺是片式薄膜电容器生产中的关键工艺。介绍了叠层薄膜电容器的生产工艺。着重论述了切片工艺研究内容,并根据研究所得工艺开发出了相关设备,对设备的关键技术提出了解决办法。     

片式电容器发展现状与技术动态

本文对全球片式陶瓷电容器、片式钽电解电容器、片式铝电解电容器、片式有机薄膜电容器、片式微调电容器等各类片式电容器的发展、现状及走势作了系统而扼要的阐述,分析了国内外该系列产品在生产规模、质量管理、工艺技术等方面存在的差距,探讨了我国赶超世界先进水平的奋斗目标和发展战略。     

片式电容器发展现状与技术动态

本文对全球片式陶瓷电窝器、片式钽电解电容器、片式铝电解电容器、片式有机薄膜电容器、片式微调电容器等各类式电容器的发展、现状及趋势作了系统而扼要的阐述，分析了国内外该系列产品在生产规模、技术管理、工艺技术等方面存在的差距，探讨了我国赶超世界先进水平的奋斗目标和发展战略。     

片式电容器发展现状与技术动态

本文对全球片式陶瓷电容器、片式钽电解电容器、片式铝电解电容器、片式有机薄膜电容器、片式微调电容器等类片式电容器的发展、现状及走势作了系统而扼要的阐述，分析了国内外该系列产品在生产规模、质量管理、工艺技术等方面存在的差距，探讨了我国赶超世界先进水平的奋半斗目标和发展战略。     

平板显示的最新进展

本文以近一两年的文献为基础，阐明平板显示各主要分支－如液晶显示、等离子体显示、电光显示、平板ＣＲＴ、场致发射显示等的最新进展，并作出一些评述。     

金属化薄膜电容器赋能机理分析与新型分切赋能装置的研制

扼要探讨了在金属化有机薄膜电容器工艺流程中，分切金属化有机薄膜时进行赋能的机理及必要性，并具体分析了具有创新特色的分切赋能装置的工作原理，使用方法与提高薄膜电容器质量的可靠性效果。     

Thin-film coaxial-cable equaliser

A theoretical study of the matching accuracy of a thin-film coaxial-cable equaliser is presented in this letter.     

Thin-film recording media

Thin-film magnetic recording media are reviewed in this paper. Although the magnetic materials and deposition processes are necessarily discussed, this paper is intended to review film media from a broader perspective than is usually found in the literature. Therefore, the subjects of applications, magnetic properties pertinent to recording, materials and processes, and reliability receive balanced attention. Moreover, within the materials and processes section and the reliability section, the topics of substrate preparation, overcoats, and mechanical and chemical stability are addressed as issues which are as important as the magnetic properties themselves. Rather than grouping film media according to the type of deposition process used (sputtered, plated, etc.) as is often done, media are grouped according to the type of magnetic anisotropies exploited and whether they are metallic or not. This classification better reflects the recording performance observed in the various film media.     

Thin-film solar cells

The R&D status of cells and modules based on hydrogenated amorphous silicon (a-Si:H) and those based on CdTe and CuInSe₂ is reviewed. The stability of a-Si:H solar cells is still a major concern. Improvements have been achieved on an empirical basis by application of multijunction structures, optimization of interfaces, etc. Stabilized efficiencies of close to 10% have been reported. In parallel, the introduction of the ‘defect-pool model’ led to remarkable progress in understanding; it follows that a-SiGe:H instead of a-Si:H should be used for the i-layer (absorber). Improved cell engineering concepts, however, such as enhancement of the built-in electric field via reduction of the i-layer thickness and/or folded structures, are believed to be more promising. Polycrystalline thin-film cells based on CdTe and CuInSe₂ are not affected by inherent degradation mechanisms. the specific properties of these materials demand heterojunctions, and particular problems arise due to the polycrystallinity of the films and to the lattice mismatch and mismatch of the electronic band structures of the materials involved. These are discussed in conjunction with measures currently applied for optimizing solar cell performance. Both cell types exhibit eficiencies in the range 16-17%. Estimations of production costs and energy payback times of thin-film photovoltaic modules are reviewed (even below 1 US$ W_p⁻¹ and as low as 4 months, respectively) and environmental concerns, especially for Cd-containing cells, are summarized.     

Thin-film persistent current switch

We have developed a fast, low power heat switch for switching a niobium thin film between the normal and superconducting state. The sputtered niobium film (400 nm thick, 100 /spl mu/m wide) has a critical current density of 5/spl times/10/sup 10/ Am/sup -2/. Switching is produced by joule heating a small section of the niobium film with a titanium thin-film resistor. With the heat switch in vacuum, the minimum heater power needed to switch to the normal state was 4.5/spl times/10/sup -5/ W. A simple three-dimensional thermal model shows that the minimum power is primarily determined by the thermal conductivity of the substrate. We have achieved response times less than 10/sup -6/ s.     

Voltage-Testing of Thin-film Capacitors

The influence of proof-test voltage and testing time on the working-life distribution of thin film capacitors is presented. The proof-test not only eliminates capacitors with low breakdown voltage, it decreases the working life of the remaining components. A short proof-test is proposed to avoid degrading the remaining components. The test method for estimating the distribution parameters is presented.