共查询到20条相似文献,搜索用时 364 毫秒
1.
介绍了一种压阻式MEMS压力传感器的工作原理,该装置由玻璃支座、单晶硅衬底及PZT薄膜构成,压阻薄膜连接组成惠斯登电桥,以取得更高的电压灵敏度和低温度敏感性.使用有限元分析软件ANSYS对单晶硅衬底的轴对称模型进行了仿真分析,以达到优化设计的目的. 相似文献
2.
采用分子束外延方法在砷化镓衬底上生长了AlAs/GaAs双势垒量子阱薄膜结构。介绍了量子阱薄膜在单轴压力作用下的压阻实验,测试出薄膜在压力影响下的I-V曲线,并分析了量子阱薄膜压阻效应的成因。通过实验证实了量子阱薄膜具有较高灵敏度的压阻效应,其压阻灵敏度比目前常用的多晶硅的压阻灵敏度提高一个数量级。 相似文献
3.
4.
应用不同频率的YAG激光分别对单晶硅及多晶硅衬底上的非晶硅薄膜进行了退火处理。晶化后的非晶硅薄膜的物相结构和表面形貌用XRD和AFM进行分析。XRD测试结果表明:随着激光频率的增加,两种衬底上的非晶硅薄膜晶化晶粒尺寸均出现了先增加后降低的现象。所有非晶硅样品的衍射峰位与衬底一致,说明非晶硅薄膜的晶粒生长是外延生长。从多晶硅衬底样品的XRD可以看出,随着激光频率的增加,激光首先融化衬底表面,然后衬底表层与非晶硅薄膜一起晶化。非晶硅薄膜最佳晶化激光频率分别为:多晶硅衬底20Hz,单晶硅衬底10Hz。 相似文献
5.
本文叙述一种新型的压力传感器——多晶硅压阻式压力传感器。这种传感器以单晶硅为衬底材料,多晶硅电阻条构成惠斯通桥路,二者之间用介质隔离。器件的背面通过对单晶硅的腐蚀制成应力腔。与单晶硅器件相比,这种器件最突出的优点是不用pn结隔离,因而可把工作温限由130℃提高到200℃。通过对多晶硅生长条件及掺杂的控制,可望得到温度系数近似为零的器件。初步实验证明,多晶硅压阻式压力传感器很有应用前景。 相似文献
6.
7.
掺杂浓度对多晶硅纳米薄膜应变系数的影响 总被引:11,自引:0,他引:11
为有效利用多晶硅纳米薄膜研制MEMS压阻器件,本文对LPCVD多晶硅纳米薄膜应变系数与掺硼浓度的关系进行了研究,并利用扫描电镜和X射线衍射实验分析了薄膜的结构特点.结果表明:在重掺杂情况下,纳米薄膜的应变系数明显大于相同掺杂浓度下单晶硅的应变系数,而且掺杂浓度在2.5×1020cm-3左右时,应变系数具有随掺杂浓度升高而增大的趋势.对这种实验结果依据隧道效应原理进行了理论解释,提出了多晶硅压阻特性的修正模型. 相似文献
8.
9.
10.
11.
12.
Samaun . Wise Kensall D. Angell James B. 《IEEE transactions on bio-medical engineering》1973,(2):101-109
A thin-diaphragm piezoresistive pressure sensor for biomedical instrumentation has been developed using monolithic integratedcircuit (IC) techniques. The piezoresistive effect has been chosen for this device because it provides an observable resistance change that is a linear function of pressure and is observable at low stress levels. A diaphragm is used as a stress magnifying device; its magnification is proportional to the square of the ratio of the diaphragm diameter to its thickness. The pressure-induced stresses in the diaphragm are sensed by properly oriented piezoresistors interconnected to form a bridge. 相似文献
13.
An interfacing circuit for piezoresistive pressure sensors based on the CMOS operational floating amplifier in a current conveyor configuration is presented. The main advantages of the proposed circuit include the use of only two piezoresistors with high common-mode rejection ratio, using an instrumentation amplifier based on a second-generation current conveyor (CCII) and temperature compensation. The circuit has frequency output proportional to the applied pressure with high linearity and temperature dependence less than 150ppm°C?1. Experimental results, using the interfacing circuit and a commercial silicon pressure sensor, are included to demonstrate its performance. 相似文献
14.
15.
16.
Monolithic, junction isolated piezoresistors have been fabricated in commercially available 6H-SiC. The gauge factor (GF) of these elements has been measured up to 250°C in both longitudinal and transverse configurations. The maximum GF observed was -29.3, corresponding to the piezoresistive coefficient π11. A beam transducer with a four-arm integral piezoresistor network was fabricated and tested in a force sensor configuration. The data indicate that, n-type 6H-SiC has the potential to be useful in high temperature electromechanical sensors to measure parameters such as pressure, force, strain and acceleration 相似文献
17.
压力传感器芯片版图设计中若干重要问题(1) 总被引:1,自引:0,他引:1
详细讨论了压阻型压力传感器设计中若刊重要问题,这些问题是合理利用压阻系数和膜上的应用,电阻条的布置和设计以及可靠性。 相似文献
18.
Hermann Sandmaier 《Mechatronics》1991,1(4):393-401
A novel design of piezoresistive, low-pressure sensors is presented. This design exhibits a number of advantages compared to conventional ones. The main objective of this development was realizing a sensor with high sensitivity, high pressure overload, and low non-linearity. This paper describes the theory of designing a piezoresistive low-pressure sensor. Through the application of a square diaphragm bossed in the center, a piezoresistive low-pressure sensor for the pressure range of ±10 kPa could be realized, exhibiting excellent sensitivity and low non-linearity of 35 mV/VF.S.O. and <|±0.05|%, respectively. 相似文献
19.
P型硅纳米板压阻特性的理论研究 总被引:1,自引:1,他引:0
考虑量子尺寸效应与自旋轨道耦合作用,从含有应变的6×6 Luttinger-Kohn哈密顿量出发,采用有限差分方法建立了p型硅纳米板的能带结构模型.基于硅纳米板压阻特性与其能带结构的相关性,采用改进的压阻理论定量分析了厚度、杂质浓度与温度对其压阻系数的影响.研究结果表明:量子尺寸效应强烈改变了硅纳米板的能带结构,是其压阻系数增大的主要因素,而自旋轨道耦合作用仅对含较高应变的硅纳米板的能带结构有较大影响;硅纳米板的压阻系数具有尺寸效应,随厚度减小而增大,随杂质浓度增加或温度升高而减小.在高简并条件下,硅纳米板的压阻系数与温度无关,完全由杂质浓度的大小控制;在非简并条件下,情况刚好相反.最后,利用施加应力前后空穴等能面形状的变化定性分析了硅纳米板压阻特性的起源. 相似文献
20.
Describes the theory and experimental data for a piezoresistive low-pressure sensor featuring a variety of advantages. The objective of this development was a sensor with high sensitivity, high overload range, and good linearity. In comparison to familiar sensor types, the sensor developed for the pressure range of 10 kPa exhibits an excellent sensitivity of 35 mV/V FSO (full scale output) and nonlinearity <±0.05%. The sensor's theoretical performance was confirmed by measurements on manufactured pressure sensors 相似文献