用场发射显微镜测量单壁碳纳米管的逸出功

该文利用场发射显微镜对单壁碳纳米管的逸出功进行了研究和测量。未进行加热除气的单壁碳纳米管的表面吸附大量气体,此时测量的逸出功不是清洁表面单壁碳纳米管的逸出功。实验首先加热除气得到单壁碳纳米管的场发射清洁像,然后利用场发射显微镜测量I-V曲线,得到Fowler-Nordheim直线斜率;再利用透射电镜观测单壁碳纳米管微束形貌像,测量管束半径,通过三种公式估算比例因子,最后计算得到单壁碳纳米管的逸出功。     

分散定向碳纳米管阵列的制备及场发射性能

利用脉冲电化学沉积技术,以NiSO4·6H2O为电镀液在镀Cr硅基片上沉积低密度、直径在150nm左右的Ni催化剂颗粒,在此基础上,采用乙炔、氨气作为气源,采用等离子体增强化学气相沉积(PECVD)技术制备分散定向的碳纳米管阵列。研究了等离子体预处理技术对纳米管制备的影响以及该阵列的场发射性能,证明低密度的碳纳米管阵列阴极能有效地降低场屏蔽效应,进而提高场发射性能,其场发射的开启电场强度约为2.39V/μm。     

图案化定向碳纳米管阵列的场发射性能研究

考虑到碳纳米管的几何形貌会在一定程度上影响其场发射性能,如驱动电场,发射电流强度等,因此本文设计了三种不同的几何图案,并采用热气相化学沉积（TCVD）法制备出了相应几何结构的定向碳纳米管阵列;通过模拟计算和场发射测试实验,我们对以上三种结构的场发射性能进行比较,发现具有规则六边形蜂窝形状的碳纳米管阵列具有最强的边缘效应,最小的屏蔽效应,以及相同电场下最大的发射电流。     

Improved field emission characteristic of carbon nanotubes by an Ag micro-particle intermediation layer

An efficient way to improve field emission characteristic of carbon nanotubes (CNTs) through an Ag micro-particle intermediation layer is presented. In this way, the intermediation layer is deposited on an indium tin oxide glass substrate by electrochemical method and then the CNTs are covered onto surface of the intermediation layer by electrophoretic method as CNT field emitters. The field emission characteristic of the CNT field emitters with the intermediation layer is significantly improved compared to the one without the intermediation layer, including decreased turn-on electric field from 4.2 to 3.1 V/μm and increased emission current density from 0.224 to 0.912 mA/cm² at an applied electric field of 6 V/μm. The improved field emission characteristic may be attributed to gibbous surface of the CNT field emitters. This efficient way is much simple, low cost, and suitable for production of large scale CNTs–based field emission cold cathode.     

Field electron emission of multiwalled carbon nanotubes and carbon nanofibers grown from Camphor

Vertically aligned carbon nanofibers (CNF) and multiwalled carbon nanotubes (MWCN) were synthesized from camphor by catalytic thermal chemical vapor deposition on Co and Co/Fe thin films (for CNF) and on silicon substrates using a mixture of camphor and ferrocene (for MWCN). CNF and MWCN were studied by scanning and transmission electron microscopy, visible Raman spectroscopy, X-ray diffraction in order to get insight into the microstructure and morphology of these materials. Field electron emission study indicates turn-on field of about 1.52, 2.3 and 4.3 V/μm for MWCN, Co/CNF and Co/Fe/CNF films, respectively; and threshold field of about 2.48, 3.1 and 6 V/μm, respectively. Our study indicates a better performance for field electron emission compared with some of the earlier published reports which might be due to higher aspect ratio, good graphitization and suitable density.     

碳纳米管薄膜的电泳沉积与场发射性能

采用电泳法在Si基片上沉积碳纳米管(CNTs)薄膜。研究了电泳极间距、电泳时间及电泳电压等对沉积的薄膜形貌结构与场发射性能的影响。SEM、高倍光学显微镜和场发射性能测试结果表明,保持阴阳极间距为2cm,在100V的直流电压下电泳2min所获得的CNTs薄膜均匀、连续、致密且具有最好的场发射性能,其开启电场强度仅为1.19V/μm,当外加电场强度为2.83V/μm时,所获得的最大发射电流密度可达14.23×10–3A/cm2。     

阵列式碳纳米管制备研究

CVD工艺制备碳纳米管阵列,二甲苯(C6H4(CH3)2)作为碳源气体,二茂铁(C10H10Fe)作为催化剂前驱体,反应温度为700～800℃,碳纳米管直径30～60nm,长度50～60μm。     

Fabrication of field emission display prototype utilizing printed carbon nanotubes/nanofibers emitters

Carbon nanotubes/nanofibers (CNTs) used as emitters, diode-type field emission display (FED) prototypes of dot matrix and character images were fabricated by low-cost techniques and equipments, respectively. The technical development in the design and fabrication of the cathode, the anode, and the panel, is described. CNTs were produced by a simple, low-cost and easily-controllable thermal chemical vapor deposition. The cathode was prepared by the screen-printing method. The field emission characteristics were enhanced by a heat post-treatment in H₂ gas atmosphere. The panel structure was packaged by a vacuum fluorescent display-like process and vacuum-sealed through an exhaust glass tube. The fully-sealed CNTs FED (c-FED) showed good emission properties. The brightness of 600 cd/m² was achieved from the yellow phosphor at a relatively low applied electric field. The developed technology has a potential practical application in c-FED.     

大规模制备定向排列的碳纳米管阵列

采用一种无模板的化学气相沉积法 ,在石英衬底上制备了大面积 ,高定向性、自支撑的碳纳米管阵列。二甲苯和二茂铁分别作为碳源和催化剂 ,连续进给到反应装置中 ,在一定温度条件下 ,碳纳米管自组织生成垂直于衬底方向的定向阵列。这种方法可以获得很高的生长速度 ,其最大长度可以达到几个毫米。拉曼光谱和高分辨透射电镜检测显示这种方法制备的碳纳米管具有较高的纯度和石墨化程度     

碳纳米管场发射阴极电泳法制备及场发射特性研究

采用电泳沉积法在玻璃基板上成功制备出碳纳米管场发射阴极,采用扫描电子显微镜观察薄膜表面形貌,并对制备的碳纳米管阴极进行场发射测试.实验结果表明电泳2 min沉积的碳纳米管薄膜均匀连续且具有较好的场发射特性,其开启电场为3.1 V/μm,当外加电场强度为11.5 V/μm时场发射电流密度达到11.33 mA/cm2,经过10 V/μm的电场激活处理后样品具有较好的场发射稳定性.     

长脉冲强流碳纳米管阴极重频发射特性初步研究

在不锈钢环形阴极基体上,采用高温热解方法直接生长石墨化程度较高的碳碳纳米管阴极,当脉冲电压达到800kV 时,发射相对论电子束流强度高达9.1kA;以5Hz 重复频率发射模式时,发射稳定、其发射阈值介于石墨不锈钢阴极之 间而等离子体扩张速度最低;多次发射后,界面无脱附现象发生。     

Improvement of the field emission properties of carbon nanotubes by CNT/Fe_3O_4 composite electrophoretic deposition

A simple CNT/Fe_3O_4 composite electrophoretic deposition method to improve the field emission cathode properties of carbon nanotubes(CNTs) is proposed.It is found that CNT/Fe_3O_4 composite electrophoretic deposition leads to better field emission performance than that of single CNT electrophoretic deposition.The result is investigated using SEM,J-E and FE.After the process,the turn-on electric field decreases from 0.882 to 0.500 V/μm at an emission current density of 0.1 mA/cm~2,and the latter increase...     

碳纳米管场致发射阴极浆料的研制

通过筛选阴极浆料中的载体、不同种类的粘结剂和添加剂,开发出具有优良场致发射性能的大面积、低成本丝网印刷复合阴极浆料并烧结制成阴极。结果表明:在电场强度为3.2V/μm下其电流密度约为42×10–3A/cm2,场发射均匀性很好,二极管型发光板发光亮度为625cd/m2。该阴极适用于制作大面积的CNT-FED阴极和液晶显示器的背光源。     

化学处理增强碳纳米管的湿敏效应

研究了多壁碳纳米管的湿敏效应。研究中所用碳纳米管是用热灯丝化学汽相沉积法生长的。实验结果表明 ,经由化学修饰后碳纳米管的湿敏效应有了极大的增强。化学修饰后碳纳米管在水蒸汽中电阻相对变化达到了 30 0 % ,而未修饰只有 3.2 5 %。本文对其结果进行了分析和讨论     

Fabrication and field emission characteristics of a novel planar-gate electron source with patterned carbon nanotubes for backlight units

This paper describes the fabrication of backlight units(BLUs) for a liquid crystal display(LCD) based on a novel planar-gate electron source with patterned carbon nanotubes(CNTs) formed by electrophoretic deposition. The electric field distributions and electron trajectories of this triode structure are simulated according to Ansys software.The device structure is optimized by supporting numerical simulation.The field emission results show that the emission current depends strongly on the cathode-gate gap and the gate voltage.Direct observation of the luminous images on a phosphor screen reveals that the electron beams undergo a noticeable expansion along the lateral direction with increasing gate voltage,which is in good agreement with the simulation results.The luminous efficiency and luminance of the fabricated device reaches 49.1 lm/W and 5500 cd/m2,respectively.All results indicate that the novel planar-gate electron source with patterned CNTs may lead to practical applications for an electron source based on a flat lamp for BLUs in LCD.     

Improvement of the field emission characteristics of an oxidized porous polysilicon using annealed Pt/Ti surface emitter electrode

The field emission characteristics of an oxidized porous polysilicon were investigated with different annealing temperatures. Pt/Ti, Ir, and Au/NiCr were used as surface emitter electrodes, and Pt/Ti emitter showed highly efficient and stable electron emission characteristic compared with the conventional Au/NiCr electrode. Thin Ti layer played an important role in promotion of adhesion of Pt to SiO₂ surface and uniform distribution of electric field on the OPPS surface. Additionally, the Ti layer efficiently blocked the diffusion of emitter metal, which resulted in more reliable emission characteristics. Pt/Ti emitter annealed at 350 °C/1 h showed the highest efficiency of 3.36% at V_ps=16 V, which resulted from the improvement of interfacial contact characteristics of thin emitter metal to an oxidized porous polysilicon. Annealing above 400 °C showed that Pt/Ti and Ir emitter electrode were thermally more stable than Au/NiCr emitter.     

Enhanced field emission from printed CNTs by high-temperature sintering and plasma bombarding in hydrogen

A novel post-treatment, including high-temperature sintering and plasma bombarding in hydrogen ambient, was performed intentionally to improve the field emission capability and stability of screen-printed carbon nanotubes (CNTs). With this treatment, the organic bonding material covering on the CNTs was preferentially removed. And the CNTs were wetted and filled by silver at the interface between the CNTs and silver electrode so that a reliable ohmic contact was achieved. These effects improved the field emission capability and stability of CNT cathode. Moreover, the equal-high CNT emitters, after the removal of the excessively protruded CNT tips/or arches, would improve the luminescence uniformity. It is suggested that a high-temperature sintering and plasma bombarding in hydrogen may be a key technology for the commercialization of CNT field emission display.     

烧结温度对碳纳米管场发射性能的影响

采用丝 网印刷制备碳纳米管(CNT)阴极的过程中,烧结工艺不仅影响着CNT薄膜的稳定性,而且决定 最终阴 极的场发射性能,已经成为制约场发射电流提升的瓶颈。本文重点研究了烧结温度对CNT场 发射性能 的影响,通过测试不同烧结曲线所制备的阴极场发射性能,分析了烧结温度对阴极附着力、 散热性能的影 响机理,阐明了场发射性能产生差异的原因,最终通过最优烧结温度,制备出场发射电流密 度达到1A/cm²的CNT阴极。     

A fully sealed luminescent tube based on carbon nanotube field emission

A fully sealed luminescent tube of 40 cm length and 4 cm diameter based on carbon nanotube field emission is demonstrated. The device shows a homogeneous illumination over the whole length and circumference of the tube and reaches the luminance of conventional fluorescent tubes while being mercury-free, continuously dimmable and with a high illuminance capability. The realization has been made possible with the development of a chemical vapor deposition method to grow nanotubes homogeneously on long metallic wires, which provides an additional possibility to control the mean length and density of the emitters. This control has proven to be of utmost importance as it makes possible to adjust the emission voltage and emission site density needed to reach the target intensity and specifications of the device.     

Lead-free solder reinforced with multiwalled carbon nanotubes

In this study, varying weight percentages of multiwalled carbon nanotubes were successfully incorporated into 95.8Sn-3.5Ag-0.7Cu solder to synthesize novel lead-free composite solders. The composite solders were synthesized using a powder metallurgy route consisting of blending, compaction, sintering, and extrusion. The extruded materials were then characterized for their physical, thermal, and mechanical properties. With the addition of increasing weight percentage of carbon nanotubes, the composite solders experienced a corresponding decrease in density values and an improvement in wetting properties. The melting temperatures of the composite solders were found to be unchanged with additions of carbon nanotubes. However, improvements in the mechanical properties, in terms of microhardness and tensile properties, were observed with increasing weight percentages of carbon nanotubes.